RS1DFS - RS1MFS
Taiwan Semiconductor
1 Version:B1907
1A, 200V - 1000V Surface Mount Fast Recovery Rectifier
FEATURES
● Glass passivated junction chip
● Ideal for automated placement
● Low profile package
● Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
● Halogen-free according to IEC 61249-2-21
APPLICATIONS
● High frequency rectification
● Freewheeling application
● Switching mode converters and inverters in
computer,automotive and telecommunication
MECHANICAL DATA
● Case: SOD-128
● Molding compound meets UL 94V-0 flammability rating
● Part no. with suffix "H" means AEC-Q101 qualified
● Packing code with suffix "G" means green compound
(halogen-free)
● Moisture sensitivity level: level 1, per J-STD-020
● Terminal: Matte tin plated leads, solderable per J-STD-002
● Meet JESD 201 class 2 whisker test
● Polarity: As marked
● Weight: 0.027 g (approximately)
KEY PARAMETERS
PARAMETER
VALUE
UNIT
IF(AV)
1
A
VRRM
200 - 1000
V
IFSM
30
A
TJ MAX
150
°C
Package
SOD-128
Configuration
Single die
SOD-128
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
PARAMETER
SYMBOL
RS1DFS
RS1GFS
RS1JFS
RS1KFS
RS1MFS
UNIT
Marking code on the device
RS1DFS
RS1GFS
RS1JFS
RS1KFS
RS1MFS
Repetitive peak reverse voltage
VRRM
200
400
600
800
1000
V
Reverse voltage, total rms value
VR(RMS)
140
280
420
560
700
V
Forward current
IF(AV)
1
A
Surge peak forward current, 8.3 ms
single half sine-wave superimposed
on rated load per diode
IFSM
30
A
Junction temperature
TJ
- 55 to +150
°C
Storage temperature
TSTG
- 55 to +150
°C
RS1DFS - RS1MFS
Taiwan Semiconductor
2 Version:B1907
THERMAL PERFORMANCE
PARAMETER
SYMBOL
TYP
UNIT
Junction-to-lead thermal resistance per diode
RӨJL
29
°C/W
Junction-to-ambient thermal resistance per diode
RӨJA
84
°C/W
Junction-to-case thermal resistance per diode
RӨJC
30
°C/W
Thermal Performance Note: Units mounted on recommended PCB (5mm x 5mm Cu pad test board)
ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted)
PARAMETER
CONDITIONS
SYMBOL
TYP
MAX
UNIT
Forward voltage per diode (1)
IF = 0.5A, TJ = 25°C
VF
0.94
1.10
V
IF = 1.0A, TJ = 25°C
1.01
1.30
IF = 0.5A, TJ = 125°C
0.79
1.00
IF = 1.0A, TJ = 125°C
0.88
1.20
Reverse current @ rated VR per diode (2)
TJ = 25°C
IR
-
5
µA
TJ = 125°C
-
50
µA
Junction capacitance
1 MHz, VR=4.0V
CJ
7
-
pF
Reverse recovery time
RS1DFS
RS1GFS
IF=0.5A ,IR=1.0A
IRR=0.25A
trr
-
150
ns
RS1JFS
-
250
ns
RS1KFS
RS1MFS
-
500
ns
Notes:
1. Pulse test with PW=0.3 ms
2. Pulse test with PW=30 ms
ORDERING INFORMATION
PART NO.
PART NO.
SUFFIX(*)
PACKING
CODE
PACKING CODE
SUFFIX
PACKAGE
PACKING
RS1xFS
(Note 1, 2)
H
MW
G
SOD-128
3,500 / 7" Plastic reel
MX
SOD-128
14,000 / 13" Plastic reel
Notes:
1. "xx" defines voltage from 200V (RS1DFS) to 1000V (RS1MFS)
2. Whole series with green compound (halogen-free)
*: Optional available
EXAMPLE P/N
EXAMPLE P/N
PART NO.
PART NO.
SUFFIX
PACKING
CODE
PACKING CODE
SUFFIX
DESCRIPTION
RS1DFSHMWG
RS1DFS
H
MW
G
AEC-Q101 qualified
Green compound
RS1DFS - RS1MFS
Taiwan Semiconductor
3 Version:B1907
CHARACTERISTICS CURVES
(TA = 25°C unless otherwise noted)
Fig.1 Forward Current Derating Curve
Fig.2 Typical Junction Capacitance
Fig.3 Typical Reverse Characteristics
Fig.4 Typical Forward Characteristics
0
0.5
1
1.5
25 50 75 100 125 150
Heat sink
5mm x 5mm
Cu pad test board
0.1
1
10
100
110 100
CAPACITANCE (pF) A
REVERSE VOLTAGE (V)
f=1.0MHz
Vsig=50mVp-p
0.001
0.01
0.1
1
10
10 20 30 40 50 60 70 80 90 100
TJ=25°C
TJ=125°C
0.1
1
10
0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5 1.6
FORWARD VOLTAGE (V)
Pulse width 300μs
1% duty cycle
TJ=25°C
TJ=125°C
INSTANTANEOUS REVERSE CURRENT (μA)
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
INSTANTANEOUS FORWARD CURRENT (A)
(A)
0.001
0.01
0.1
1
10
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2
Pulse width
TJ=25°C
TJ=125°C
UF1DLW
AVERAGE FORWARD CURRENT (A)
LEAD TEMPERATURE (°C)
RS1DFS - RS1MFS
Taiwan Semiconductor
4 Version:B1907
PACKAGE OUTLINE DIMENSIONS
SOD-128
SUGGESTED PAD LAYOUT
MARKING DIAGRAM
DIM
Unit (mm)
Unit (inch)
Min
Max
Min
Max
A
3.60
4.00
0.142
0.157
B
2.30
2.70
0.091
0.106
C
1.60
1.90
0.063
0.075
D
0.90
1.10
0.035
0.043
E
0.10
0.22
0.004
0.009
F
0.00
0.10
0.000
0.004
G
0.30
0.60
0.012
0.024
H
0.40
0.80
0.016
0.031
I
4.40
5.00
0.173
0.197
DIM
Unit (mm)
Unit (inch)
A
1.40
0.055
B
3.00
0.118
C
2.10
0.082
D
4.40
0.173
P/N
= Marking Code
YW
= Date Code
F
= Factory Code
RS1DFS - RS1MFS
Taiwan Semiconductor
5 Version:B1907
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to
any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
