Si3441DV P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET uses Fairchild's low voltage PowerTrench process. It has been optimized for battery power management applications. * -3.5 A, -20 V. Applications * High performance trench technology for extremely low RDS(ON) RDS(ON) = 80 m @ VGS = -4.5 V RDS(ON) = 110 m @ VGS = -2.5 V * Low gate charge * Battery management * Load switch * Battery protection D D S SuperSOT TM-6 D D 6 2 5 3 4 G Absolute Maximum Ratings Symbol 1 TA=25oC unless otherwise noted Parameter Ratings Units VDSS Drain-Source Voltage -20 V VGSS Gate-Source Voltage 8 V ID Drain Current -3.5 A PD Maximum Power Dissipation - Continuous (Note 1a) - Pulsed TJ, TSTG -20 (Note 1a) 1.6 (Note 1b) 0.8 W -55 to +150 C (Note 1a) 78 C/W (Note 1) 30 C/W Operating and Storage Junction Temperature Range Thermal Characteristics RJA Thermal Resistance, Junction-to-Ambient RJC Thermal Resistance, Junction-to-Case Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity .441 Si3441DV 7'' 8mm 3000 units 2001 Fairchild Semiconductor Corporation Si3441DV Rev A (W) Si3441DV April 2001 PRELIMINARY Symbol TA = 25C unless otherwise noted Parameter Test Conditions Min Typ Max Units -12 mV/C Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 A BVDSS TJ IDSS Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current ID = -250 A, Referenced to 25C VDS = -16 V, VGS = 0 V -1 A IGSSF Gate-Body Leakage, Forward VGS = 8 V, VDS = 0 V 100 nA IGSSR Gate-Body Leakage, Reverse VGS = -8 V VDS = 0 V -100 nA On Characteristics -20 V (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = -250 A VGS(th) TJ RDS(on) Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance ID = -250 A, Referenced to 25C 3 60 82 77 -0.4 ID(on) On-State Drain Current VGS = -4.5 V, ID = -3.5 A VGS = -2.5 V, ID = -3.1 A VGS = -4.5 V, ID = -3.5A,TJ=125C VGS = -4.5 V, VDS = -5 V gFS Forward Transconductance VDS = -5 V, ID = -3.5 A VDS = -10 V, f = 1.0 MHz V GS = 0 V, -0.8 -1.5 V mV/C 80 110 112 m -10 A 11 S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) 779 pF 121 pF 56 pF (Note 2) 10 20 ns 9 19 ns Turn-Off Delay Time 27 43 ns tf Turn-Off Fall Time 11 20 ns Qg Total Gate Charge 7.2 10 nC Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = -10 V, VGS = -4.5 V, VDS = -10 V, VGS = -4.5 V ID = -1 A, RGEN = 6 ID = -3.5 A, 1.7 nC 1.5 nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = -1.3 A -0.8 (Note 2) -1.3 A -1.2 V Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. a) 78C/W when mounted on a 1in2 pad of 2 oz copper b) 156C/W when mounted on a minimum pad of 2 oz copper Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0% Si3441DV Rev A (W) Si3441DV Electrical Characteristics Si3441DV Typical Characteristics 15 2 VGS = -4.5V -2.5V -3.5V -ID, DRAIN CURRENT (A) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE -3.0V 12 9 -2.0V 6 3 -1.5V VGS=-2.0V 1.8 1.6 -2.5V 1.4 -3.0V 1.2 -3.5V -4.5V 1 0.8 0 0 1 2 3 0 4 3 6 Figure 1. On-Region Characteristics. 15 0.22 ID = -3.5A VGS = -4.5V 1.3 RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 12 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 1.4 1.2 1.1 1 0.9 0.8 0.7 ID = -1.8A 0.18 0.14 TA = 125oC 0.1 TA = 25oC 0.06 0.02 -50 -25 0 25 50 75 100 125 150 1 2 o TJ, JUNCTION TEMPERATURE ( C) 3 4 5 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 10 10 TA = -55oC 25oC -IS, REVERSE DRAIN CURRENT (A) VDS = -5V -ID, DRAIN CURRENT (A) 9 -ID, DRAIN CURRENT (A) -VDS, DRAIN TO SOURCE VOLTAGE (V) 8 125oC 6 4 2 0 0.5 1 1.5 2 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 2.5 VGS = 0V 1 TA = 125oC 0.1 25oC 0.01 -55oC 0.001 0.0001 0 0.2 0.4 0.6 0.8 1 1.2 -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. Si3441DV Rev A (W) Si3441DV Typical Characteristics 1000 ID = -3.5A VDS = -5V -10V 800 -15V 3 2 1 600 400 COSS 200 0 CRSS 0 0 1 2 3 4 5 6 7 8 9 0 5 Qg, GATE CHARGE (nC) 15 20 Figure 8. Capacitance Characteristics. 10 10 RDS(ON) LIMIT P(pk), PEAK TRANSIENT POWER (W) 100 100s 1ms 10ms 100ms 1 1s DC VGS = -10V SINGLE PULSE RJA = 156oC/W 0.1 TA = 25oC 0.01 0.1 1 10 100 SINGLE PULSE RJA = 156C/W TA = 25C 8 6 4 2 0 0.01 0.1 1 10 100 t1, TIME (sec) -VDS, DRAIN-SOURCE VOLTAGE (V) Figure 9. Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 10 -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. -ID, DRAIN CURRENT (A) f = 1 MHz VGS = 0 V CISS 4 CAPACITANCE (pF) -VGS, GATE-SOURCE VOLTAGE (V) 5 Figure 10. Single Pulse Maximum Power Dissipation. 1 D = 0.5 RJA(t) = r(t) + RJA 0.2 RJA = 156 C/W 0.1 o 0.1 P(pk) 0.05 t1 0.02 0.01 t2 TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2 0.01 SINGLE PULSE 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. Si3441DV Rev A (W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DenseTrenchTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM FAST FASTrTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM LittleFETTM MicroFETTM MICROWIRETM OPTOLOGICTM OPTOPLANARTM PACMANTM POPTM PowerTrench QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SILENT SWITCHER SMART STARTTM Star* PowerTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM UHCTM UltraFET VCXTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H1