CCD image sensor S9840 High UV sensitivity CCD image sensor S9840 is a back-thinned type CCD image sensor specifically designed for spectrometers. S9840 has low noise, low dark signal and wide dynamic range. These enable low-light-level detection by setting a long integration time. S9840 has a pixel size of 14 x 14 m and active area of 28.672 (H) x 0.196 (V) mm (2048 x 14 pixels). Features Applications Optimized structure for full line binning (1D operation) Spectrometer, etc. High quantum efficiency in UV region Stable UV response Low dark current (MPP operation) No image-lag High-speed response: Signal output frequency 5 MHz Max. General ratings Parameter Pixel size Number of pixels Number of active pixels Active area Vertical clock phase Horizontal clock phase Output circuit Package Window *1 Specification 14 (H) x 14 (V) m 2080 x 20 pixels 2048 x 14 pixels 28.672 (H) x 0.196 (V) mm 2-phases 2-phases Two-stage MOSFET source follower 22-pin ceramic PGA Quartz glass *1: Temporary window type (S9840N) is available upon request. Absolute maximum ratings (Ta=25 C) Parameter Operating temperature *2 Storage temperature OD voltage RD voltage OFD voltage ISH voltage IGH voltage SG voltage OG voltage RG voltage TG voltage Vertical clock voltage Horizontal clock voltage Symbol Topr Tstg VOD VRD VOFD VISH VIGH VSG VOG VRG VTG VP1V, VP2V VP1H, VP2H Min. -50 -50 -0.5 -0.5 -0.5 -0.5 -10 -10 -10 -10 -10 -10 -10 Typ. - Max. +50 +70 +25 +18 +18 +18 +15 +15 +15 +15 +15 +15 +15 Unit C C V V V V V V V V V V V *2: Chip temperature www.hamamatsu.com 1 CCD image sensor S9840 Operating conditions (MPP mode, Ta=25 C) Parameter Output transistor drain voltage Reset drain voltage Over flow drain voltage Output gate voltage Substrate voltage Test point (input source) Test point (input gate) High Low High Horizontal shift register clock voltage Low High Over flow gate voltage Low High Summing gate voltage Low High Reset gate voltage Low High Transfer gate voltage Low Vertical shift register clock voltage Symbol VOD VRD VOFD VOG VSS VISH VIGH VP1VH, VP2VH VP1VL, VP2VL VP1HH, VP2HH VP1HL, VP2HL VOFGH VOFGL VSGH VSGL VRGH VRGL VTGH VTGL Min. 18 11.5 11.5 1 -8 4 -9 4 -9 4 -9 4 -9 4 -9 4 -9 Typ. 20 12 12 3 0 VRD 0 6 -8 6 -8 6 -8 6 -8 6 -8 6 -8 Max. 22 12.5 12.5 5 8 -7 8 -7 8 -7 8 -7 8 -7 8 -7 Unit V V V V V V V Symbol fc CP1V, CP2V CP1H CP2H CSG CRG CTG CTE Vout Zo P Min. 0.99995 12 - Typ. 300 160 5 10 60 0.99999 14 400 95 Max. 5 16 - Unit MHz pF pF pF pF pF V mW Max. 120 1500 30 10 Unit V keV/epA/cm2 e-/pixel/s e- rms nm % V V V V V V Electrical characteristics (Ta=25 C) Parameter Signal output frequency Vertical shift register capacitance Horizontal shift register capacitance Summing gate capacitance Reset gate capacitance Transfer gate capacitance Charge transfer efficiency *3 DC output level *4 Output impedance *4 Power consumption *4, *5 *3: Charge transfer efficiency per pixel, measured at half of the full well capacity. *4: The value depends on the VOD. (VOD=20 V) *5: Power consumption of the on-chip amplifier Electrical and optical characteristics (Ta=25 C, unless otherwise noted) Parameter Saturation output voltage Full well capacity *6 CCD node sensitivity Dark current *7 Symbol Vsat Fw Sv DS Readout noise Dynamic range *9 Spectral response range Photo response non-uniformity *10 *8 Nr DR PRNU Min. 100 - Typ. Fw x Sv 130 4.0 40 500 25 5200 200 to 1100 3 *6: The linearity is 2 %. *7: Dark current nearly doubles for every 5 to 7 C increase in temperature. *8: At 2 MHz readout. *9: Dynamic range (DR) = Full well/Readout noise *10: Measured at the half of the full well capacity output. PRNU = Fixed pattern noise (peak to peak) Signal x 100 [%] 2 CCD image sensor S9840 Spectral response (without window) *11 100 90 90 80 80 70 70 60 50 40 30 50 40 30 20 10 10 400 600 800 1000 Quartz window (resin sealing) 60 20 0 200 (Typ. Ta=25 C) 100 Transmittance (%) Quantum efficiency (%) Spectral transmittance characteristic of window material (Typ. Ta=25 C) 0 100 200 300 400 500 600 700 800 900 1000 1200 Wavelength (nm) Wavelength (nm) KMPDB0247EA KMPDB0278EA *11: Compared to window-less types, the S9840 spectral response is low due to the spectral transmittance of the quartz glass window. Device structure (Conceptual drawing of top view) Thinning B9 B10 B11 3 bevel B8 14 signal out B1 A6 5 4 3 2 12345 A5 H A4 A11 A2 3 bevel Thinning V B4 A1 A8 A7 8 blank 8 bevel A9 A10 2048 signal out 8 blank 8 bevel KMPDC0210EA 3 CCD image sensor S9840 Timing chart (Line binning) Integration period Readout period Vertical binning period Tpwv P1V Tovr P2V, TG Tpwh, Tpws P1H, OFG P2H, SG Tpwr RG OS KMPDC0211EB Parameter Pulse width P1V, P2V, TG Rise and fall time Pulse width Rise and fall time P1H, P2H, OFG Duty ratio Pulse width Rise and fall time SG Duty ratio Pulse width RG Rise and fall time TG (P2V) - P1H Overlap time Symbol Tpwv Tprv, Tpfv Tpwh Tprh, Tpfh Tpws Tprs, Tpfs Tpwr Tprr, Tpfr Tovr Remark *12 *12 - Min. 1 20 50 10 50 10 15 10 3 Typ. 50 50 - Max. - Unit s ns ns ns % ns ns % ns ns s *12: Symmetrical pulses should be overlapped at 50 % of maximum amplitude. Dimensional outline (unit: mm) 40.0 +0.7 -0.4 3.1 0.25 0.457 2.0 * 0.15 9.0 3.5 Photosensitive surface Index mark pin No. 1 A1 B1 A11 7.62 14.0 +0.6 -0.2 Active area 28.672 B11 2.54 * Distance between window surface and photosensitive surface KMPDA0186ED 4 CCD image sensor S9840 Pin connections Pin No. A1 A2 A3 A4 A5 A6 A7 A8 A9 A10 A11 B1 B2 B3 B4 B5 B6 B7 B8 B9 B10 B11 Symbol OS OD SS RD RG OG OFD OFG P2H P1H ISH SG P2V P1V TG *13 RD SS P1V P2V IGH Function Output transistor source, internal RL Output transistor drain Substrate (GND) Reset drain Reset gate Output gate Over flow drain Over flow gate CCD horizontal register clock-2 CCD horizontal resister clock-1 Test point (input source) Summing gate CCD vertical register clock-2 CCD vertical register clock-1 Transfer gate Reset drain Substrate (GND) CCD vertical register clock-1 CCD vertical register clock-2 Test point (input gate) Remark (standard operation) Output signal DC (+20 V) GND DC (+12 V) Clock (+6/-8 V) DC (+3 V) DC (+12 V) Same pulse as P1H Clock (+6/-8 V) Clock (+6/-8 V) DC (+12 V) Same pulse as P2H Clock (+6/-8 V) Clock (+6/-8 V) Same pulse as P2V DC (+12 V) GND Clock (+6/-8 V) Clock (+6/-8 V) GND *13: Isolation gate between vertical register and horizontal register. In standard operation, TG should be applied the same pulse as P2V. Precaution for use (Electrostatic countermeasures) O Handle these sensors with bare hands or wearing cotton gloves. In addition, wear anti-static clothing or use a wrist band with an earth ring, in order to prevent electrostatic damage due to electrical charges from friction. O Avoid directly placing these sensors on a work-desk or work-bench that may carry an electrostatic charge. O Provide ground lines or ground connection with the work-floor, work-desk and work-bench to allow static electricity to discharge. O Ground the tools used to handle these sensors, such as tweezers and soldering irons. It is not always necessary to provide all the electrostatic measures stated above. Implement these measures according to the amount of damage that occurs. 5 CCD image sensor S9840 Driver circuit (for CCD image sensor S9840) C10416 [Sold separately] The C10416 is a driver circuit designed for HAMAMATSU CCD image sensor S9840. The C10416 can be used in applications such as spectrometers when combined with the S9840. Features For CCD image sensor S9840 Built-in 14-bit AD converter Signal frequency: 1 MHz Adjustable offset Adjustable gain Interface of computer: USB1.1/2.0 Connections Refer to the following diagram to connect hardware peripherals. USB1.1/2.0 PC Pulse generator USB_driver_ board_0504 DC +5.0 V DC power or AC adapter C10416 KACCC0391EA Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. (c)2008 Hamamatsu Photonics K.K. www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184 U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvagen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 Cat. No. KMPD1082E11 Jun. 2008 DN 6