CCD image sensor
High UV sensitivity CCD image sensor
S9840
S9840 is a back-thinned type CCD image sensor specifi cally designed for spectrometers. S9840 has low noise, low dark signal and
wide dynamic range. These enable low-light-level detection by setting a long integration time.
S9840 has a pixel size of 14 × 14 μm and active area of 28.672 (H) × 0.196 (V) mm (2048 × 14 pixels).
1
Features Applications
Optimized structure for full line binning (1D operation) Spectrometer, etc.
High quantum effi ciency in UV region
Stable UV response
Low dark current (MPP operation)
No image-lag
High-speed response:
Signal output frequency 5 MHz Max.
www.hamamatsu.com
General ratings
Absolute maximum ratings (Ta=25 °C)
Parameter Specification
Pixel size 14 (H) × 14 (V) μm
Number of pixels 2080 × 20 pixels
Number of active pixels 2048 × 14 pixels
Active area 28.672 (H) × 0.196 (V) mm
Vertical clock phase 2-phases
Horizontal clock phase 2-phases
Output circuit Two-stage MOSFET source follower
Package 22-pin ceramic PGA
Window *1Quartz glass
*1: Temporary window type (S9840N) is available upon request.
Parameter Symbol Min. Typ. Max. Unit
Operating temperature *2Topr -50 - +50 °C
Storage temperature Tstg -50 - +70 °C
OD voltage VOD -0.5 - +25 V
RD voltage VRD -0.5 - +18 V
OFD voltage VOFD -0.5 - +18 V
ISH voltage VISH -0.5 - +18 V
IGH voltage VIGH -10 - +15 V
SG voltage VSG -10 - +15 V
OG voltage VOG -10 - +15 V
RG voltage VRG -10 - +15 V
TG voltage VTG -10 - +15 V
Vertical clock voltage VP1V, VP2V -10 - +15 V
Horizontal clock voltage VP1H, VP2H -10 - +15 V
*2: Chip temperature
CCD image sensor S9840
2
Operating conditions (MPP mode, Ta=25 °C)
Electrical characteristics (Ta=25 °C)
Electrical and optical characteristics (Ta=25 °C, unless otherwise noted)
Parameter Symbol Min. Typ. Max. Unit
Output transistor drain voltage VOD 18 20 22 V
Reset drain voltage VRD 11.5 12 12.5 V
Over fl ow drain voltage VOFD 11.5 12 12.5 V
Output gate voltage VOG 135V
Substrate voltage VSS -0-V
Test point (input source) VISH -VRD -V
Test point (input gate) VIGH -8 0 - V
Vertical shift register clock voltage High VP1VH, VP2VH 468
V
Low VP1VL, VP2VL -9 -8 -7
Horizontal shift register clock voltage High VP1HH, VP2HH 468
V
Low VP1HL, VP2HL -9 -8 -7
Over fl ow gate voltage High VOFGH 468
V
Low VOFGL -9 -8 -7
Summing gate voltage High VSGH 468
V
Low VSGL -9 -8 -7
Reset gate voltage High VRGH 468
V
Low VRGL -9 -8 -7
Transfer gate voltage High VTGH 468
V
Low VTGL -9 -8 -7
Parameter Symbol Min. Typ. Max. Unit
Signal output frequency fc - - 5 MHz
Vertical shift register capacitance CP1V, CP2V - 300 - pF
Horizontal shift register capacitance CP1H CP2H - 160 - pF
Summing gate capacitance CSG -5-pF
Reset gate capacitance CRG -10-pF
Transfer gate capacitance CTG -60-pF
Charge transfer effi ciency *
3
CTE 0.99995 0.99999 - -
DC output level *
4
Vout 12 14 16 V
Output impedance *
4
Zo - 400 - Ω
Power consumption *
4,
*
5
P - 95 - mW
*3: Charge transfer effi ciency per pixel, measured at half of the full well capacity.
*4: The value depends on the VOD. (VOD=20 V)
*5: Power consumption of the on-chip amplifi er
Parameter Symbol Min. Typ. Max. Unit
Saturation output voltage Vsat - Fw × Sv - V
Full well capacity *6Fw 100 130 - ke-
CCD node sensitivity Sv - 4.0 - μV/e-
Dark current *7DS - 40 120 pA/cm2
- 500 1500 e-/pixel/s
Readout noise *8Nr - 25 30 e- rms
Dynamic range *9DR - 5200 - -
Spectral response range λ- 200 to 1100 - nm
Photo response non-uniformity *10 PRNU - ±3±10 %
*6: The linearity is ±2 %.
*7: Dark current nearly doubles for every 5 to 7 °C increase in temperature.
*8: At 2 MHz readout.
*9: Dynamic range (DR) = Full well/Readout noise
*10: Measured at the half of the full well capacity output.
Fixed pattern noise (peak to peak)
Signal × 100
[%]PRNU =
CCD image sensor S9840
3
Spectral response (without window) *11
Device structure (Conceptual drawing of top view)
Spectral transmittance characteristic of window material
Wavelength (nm)
Quantum efficiency (%)
200 400 600 800 1000
0
100
90
80
70
60
50
40
30
20
10
1200
(Typ. Ta=25 °C)
14 signal out
3 bevel 3 bevel
Thinning
Thinning
2
3
4
5
V
12345 H
8 blank
2048 signal out
8 blank
8 bevel 8 bevel
B8 B9
B10 B11
A11
A10
A9A7
A1
A2
A4
A5
A6
B1
B4
A8
0
10
100 200
Wavelength (nm)
Transmittance (%)
300 400 500 600 700 800 900 1000
20
30
40
50
60
70
80
90
100 (Typ. Ta=25 °C)
Quartz window
(resin sealing)
KMPDB0247EA
KMPDC0210EA
KMPDB0278EA
*11: Compared to window-less types, the S9840
spectral response is low due to the spectral
transmittance of the quartz glass window.
CCD image sensor S9840
4
Dimensional outline (unit: mm)
Timing chart (Line binning)
Active area 28.672 3.1 ± 0.25
0.457
9.0
2.0 * ± 0.153.5
Photosensitive
surface
7.62
2.54
A1
B1
A11
B11
Index mark pin No. 1
* Distance between window surface and photosensitive surface
14.0 +0.6
-0.2
40.0 +0.7
-0.4
Integration period Vertical binning period
P1V
P2V, TG
P1H, OFG
P2H, SG
Readout period
Tpwv
Tov r
Tpwh, Tpws
Tpwr
RG
OS
KMPDA0186ED
KMPDC0211EB
Parameter Symbol Remark Min. Typ. Max. Unit
P1V, P2V, TG Pulse width Tpwv *12 1--
μs
Rise and fall time Tprv, Tpfv 20 - - ns
P1H, P2H, OFG
Pulse width Tpwh
*12
50 - - ns
Rise and fall time Tprh, Tpfh 10 - - ns
Duty ratio - - 50 - %
SG
Pulse width Tpws
-
50 - - ns
Rise and fall time Tprs, Tpfs 10 - - ns
Duty ratio - - 50 - %
RG Pulse width Tpwr -15 - - ns
Rise and fall time Tprr, Tpfr 10 - - ns
TG (P2V) - P1H Overlap time Tovr - 3 - - μs
*12: Symmetrical pulses should be overlapped at 50 % of maximum amplitude.
CCD image sensor S9840
5
Pin connections
Pin No. Symbol Function Remark (standard operation)
A1 OS Output transistor source, internal RLOutput signal
A2 OD Output transistor drain DC (+20 V)
A3 SS Substrate (GND) GND
A4 RD Reset drain DC (+12 V)
A5 RG Reset gate Clock (+6/-8 V)
A6 OG Output gate DC (+3 V)
A7 OFD Over fl ow drain DC (+12 V)
A8 OFG Over fl ow gate Same pulse as P1H
A9 P2H CCD horizontal register clock-2 Clock (+6/-8 V)
A10 P1H CCD horizontal resister clock-1 Clock (+6/-8 V)
A11 ISH Test point (input source) DC (+12 V)
B1 SG Summing gate Same pulse as P2H
B2 P2V CCD vertical register clock-2 Clock (+6/-8 V)
B3 P1V CCD vertical register clock-1 Clock (+6/-8 V)
B4 TG *13 Transfer gate Same pulse as P2V
B5 - - -
B6 - - -
B7 RD Reset drain DC (+12 V)
B8 SS Substrate (GND) GND
B9 P1V CCD vertical register clock-1 Clock (+6/-8 V)
B10 P2V CCD vertical register clock-2 Clock (+6/-8 V)
B11 IGH Test point (input gate) GND
*13: Isolation gate between vertical register and horizontal register. In standard operation, TG should be applied the same pulse as P2V.
Precaution for use (Electrostatic countermeasures)
O Handle these sensors with bare hands or wearing cotton gloves. In addition, wear anti-static clothing or use a wrist band with an earth
ring, in order to prevent electrostatic damage due to electrical charges from friction.
O Avoid directly placing these sensors on a work-desk or work-bench that may carry an electrostatic charge.
O Provide ground lines or ground connection with the work-fl oor, work-desk and work-bench to allow static electricity to discharge.
O Ground the tools used to handle these sensors, such as tweezers and soldering irons.
It is not always necessary to provide all the electrostatic measures stated above. Implement these measures according to the amount of
damage that occurs.
www.hamamatsu.com
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2008 Hamamatsu Photonics K.K.
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Cat. No. KMPD1082E11 Jun. 2008 DN
CCD image sensor S9840
USB1.1/2.0
PC
Pulse
generator
DC +5.0 V
DC power
or AC adapter
USB_driver_
board_0504
C10416
KACCC0391EA
6
Connections
Refer to the following diagram to connect hardware peripherals.
Driver circuit (for CCD image sensor S9840) C10416 [Sold separately]
The C10416 is a driver circuit designed for HAMAMATSU CCD image sensor S9840. The C10416 can be used in applications such as spec-
trometers when combined with the S9840.
Features
For CCD image sensor S9840
Built-in 14-bit AD converter
Signal frequency: 1 MHz
Adjustable offset
Adjustable gain
Interface of computer: USB1.1/2.0
