Memory Module Specifications KVR13R9D4K4/64I 64GB (16GB 2G x 72-Bit x 4 pcs.) PC3-10600 CL9 Registered w/Parity 240-Pin DIMM Kit DESCRIPTION SPECIFICATIONS ValueRAM's KVR13R9D4K4/64I is a kit of four 2G x 72-bit CL(IDD) 9 cycles (16GB) DDR3-1333 CL9 SDRAM (Synchronous DRAM), Row Cycle Time (tRCmin) 49.5ns (min.) Refresh to Active/Refresh Command Time (tRFCmin) 260ns (min.) memory modules, based on thirty-six 1G x 4-bit FBGA components per module. Total kit capacity is 64GB. The SPDs are Row Active Time (tRASmin) 36ns (min.) programmed to JEDEC standard latency DDR3-1333 timing of Maximum Operating Power registered w/parity, Intel (R) Compatibility Tested, 2Rx4 ECC 9-9-9 at 1.5V. Each 240-pin DIMM uses gold contact fingers. The electrical and mechanical specifications are as follows: 6.411 W* (per module) UL Rating 94 V - 0 Operating Temperature 0o C to 85o C Storage Temperature -55o C to +100o C FEATURES * JEDEC standard 1.5V (1.425V ~1.575V) Power Supply * VDDQ = 1.5V (1.425V ~ 1.575V) * 667MHz fCK for 1333Mb/sec/pin * 8 independent internal bank * Programmable CAS Latency: 9, 8, 7, 6 * Programmable Additive Latency: 0, CL - 2, or CL - 1 clock * Programmable CAS Write Latency(CWL) = 7 (DDR3-1333) * 8-bit pre-fetch * Burst Length: 8 (Interleave without any limit, sequential with starting address "000" only), 4 with tCCD = 4 which does not allow seamless read or write [either on the fly using A12 or MRS] * Bi-directional Differential Data Strobe * Internal(self) calibration : Internal self calibration through ZQ pin (RZQ : 240 ohm 1%) * On Die Termination using ODT pin * On-DIMM thermal sensor (Grade B) * Average Refresh Period 7.8us at lower than TCASE 85C, 3.9us at 85C < TCASE < 95C * Asynchronous Reset * PCB : Height 1.180" (30.00mm), double sided component *Power will vary depending on the SDRAM and Register/PLL used. Continued >> Document No. VALUERAM1138-001.A00 04/26/12 Page 1 MODULE DIMENSIONS: (Units = millimeters) Document No. VALUERAM1138-001.A00 Page 2