NSP4201MR6 ESD and Surge Protection Device Low Clamping Voltage Surge Protection Diode Array www.onsemi.com The NSP4201MR6 surge protector is designed to protect high speed data lines from ESD, EFT, and lightning surges. 6 Features * Protection for the Following IEC Standards: * * * * * IEC 61000-4-2 (ESD) 30 kV (Contact) IEC 61000-4-5 (Lightning) 25 A (8/20 ms) Low Clamping Voltage Low Leakage UL Flammability Rating of 94 V-0 SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant Symbol Value Unit Peak Power Dissipation 8/20 ms @ TA = 25C (Note 1) Ppk 500 W Operating Junction Temperature Range TJ -40 to +125 C Storage Temperature Range Tstg -55 to +150 C Lead Solder Temperature - Maximum (10 Seconds) TL 260 C 30 30 kV 40 A IEC 61000-4-4 (5/50 ns) ESD EFT Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Non-repetitive current pulse per Figure 1 (Pin 5 to Pin 2) See Application Note AND8308/D for further description of survivability specs. (c) Semiconductor Components Industries, LLC, 2017 June, 2017 - Rev. 1 42 = Specific Device Code M = Date Code G = Pb-Free Package PIN CONFIGURATION AND SCHEMATIC MAXIMUM RATINGS (TJ = 25C unless otherwise noted) IEC 61000-4-2 Air (ESD) IEC 61000-4-2 Contact (ESD) 42 MG G *Date Code orientation may vary depending upon manufacturing location. High Speed Communication Line Protection USB 1.1 and 2.0 Power and Data Line Protection Digital Video Interface (DVI) Monitors and Flat Panel Displays Rating MARKING DIAGRAM (Note: Microdot may be in either location) Typical Applications * * * * 1 TSOP-6 CASE 318G 1 I/O 1 6 I/O VN 2 5 VP I/O 3 4 I/O ORDERING INFORMATION Package Shipping NSP4201MR6T1G Device TSOP-6 (Pb-Free) 3000 / Tape & Reel SZNSP4201MR6T1G TSOP-6 (Pb-Free) 3000 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Publication Order Number: NSP4201MR6/D NSP4201MR6 ELECTRICAL CHARACTERISTICS I (TA = 25C unless otherwise noted) Symbol IF Parameter IPP Maximum Reverse Peak Pulse Current VC Clamping Voltage @ IPP VRWM Working Peak Reverse Voltage IR VC VBR VRWM VBR V IR VF IT Maximum Reverse Leakage Current @ VRWM Breakdown Voltage @ IT IT Test Current IF Forward Current VF Forward Voltage @ IF Ppk Peak Power Dissipation C IPP Uni-Directional Surge Protection Capacitance @ VR = 0 and f = 1.0 MHz *See Application Note AND8308/D for detailed explanations of datasheet parameters. ELECTRICAL CHARACTERISTICS (TJ=25C unless otherwise specified) Parameter Reverse Working Voltage Breakdown Voltage Symbol VRWM VBR Conditions Min Typ (Note 2) IT=1 mA, (Note 3) Max Unit 5.0 V 6.0 V Reverse Leakage Current IR VRWM = 5 V 1.0 mA Clamping Voltage (tp = 8/20 ms per Figure 1) VC IPP = 1 A, Any I/O to GND 8.5 V IPP = 5 A, Any I/O to GND 9.0 IPP = 8 A, Any I/O to GND 10 IPP = 25 A, Any I/O to GND 12 Junction Capacitance CJ VR = 0 V, f=1 MHz between I/O Pins and GND 3.0 5.0 pF Junction Capacitance CJ VR = 0 V, f=1 MHz between I/O Pins 1.5 3.0 pF 2. Surge protection devices are normally selected according to the working peak reverse voltage (VRWM), which should be equal or greater than the DC or continuous peak operating voltage level. 3. VBR is measured at pulse test current IT. 90 20 PEAK VALUE IRSM @ 8 ms tr 18 PULSE WIDTH (tP) IS DEFINED AS THAT POINT WHERE THE PEAK CURRENT DECAY = 8 ms 80 70 60 CLAMPING VOLTAGE (V) % OF PEAK PULSE CURRENT 100 HALF VALUE IRSM/2 @ 20 ms 50 40 30 tP 20 14 12 I/O-GND 10 8 6 4 2 10 0 16 0 20 40 t, TIME (ms) 60 0 80 Figure 1. IEC61000-4-5 8/20 ms Pulse Waveform 0 5 10 15 20 PEAK PULSE CURRENT (A) 25 30 Figure 2. Clamping Voltage vs. Peak Pulse Current (tp = 8/20 ms per Figure 1) www.onsemi.com 2 100 20 80 0 60 -20 VOLTAGE (V) VOLTAGE (V) NSP4201MR6 40 20 -40 -60 0 -20 -20 -80 0 20 40 60 80 100 120 -100 -20 140 0 TIME (ns) 20 40 60 80 100 120 140 TIME (ns) Figure 3. IEC61000-4-2 +8 kV Contact Clamping Voltage Figure 4. IEC61000-4-2 -8 kV Contact Clamping Voltage IEC61000-4-2 Waveform IEC 61000-4-2 Spec. Ipeak Level Test Voltage (kV) First Peak Current (A) Current at 30 ns (A) Current at 60 ns (A) 1 2 7.5 4 2 2 4 15 8 4 3 6 22.5 12 6 4 8 30 16 8 100% 90% I @ 30 ns I @ 60 ns 10% tP = 0.7 ns to 1 ns Figure 5. IEC61000-4-2 Spec ESD Gun Surge Protection Oscilloscope 50 W Cable 50 W Figure 6. Diagram of ESD Test Setup The following is taken from Application Note AND8308/D - Interpretation of Datasheet Parameters for ESD Devices. systems such as cell phones or laptop computers it is not clearly defined in the spec how to specify a clamping voltage at the device level. ON Semiconductor has developed a way to examine the entire voltage waveform across the ESD protection diode over the time domain of an ESD pulse in the form of an oscilloscope screenshot, which can be found on the datasheets for all ESD protection diodes. For more information on how ON Semiconductor creates these screenshots and how to interpret them please refer to AND8307/D. ESD Voltage Clamping For sensitive circuit elements it is important to limit the voltage that an IC will be exposed to during an ESD event to as low a voltage as possible. The ESD clamping voltage is the voltage drop across the ESD protection diode during an ESD event per the IEC61000-4-2 waveform. Since the IEC61000-4-2 was written as a pass/fail spec for larger www.onsemi.com 3 NSP4201MR6 TYPICAL PERFORMANCE CURVES 100 5.0 90 4.5 JUNCTION CAPACITANCE (pF) PEAK POWER DISSIPATION (%) (TJ = 25C unless otherwise noted) 80 70 60 50 40 30 20 10 0 0 25 50 75 100 125 150 175 4.0 3.5 3.0 2.0 I/O-I/O 1.5 1.0 0.5 0.0 200 I/O-GND 2.5 0 TA, AMBIENT TEMPERATURE (C) 1 2 3 4 VBR, REVERSE VOLTAGE (V) Figure 7. Pulse Derating Curve Figure 8. Junction Capacitance vs Reverse Voltage Figure 9. RF Insertion Loss www.onsemi.com 4 5 NSP4201MR6 TYPICAL APPLICATIONS RJ45 Connector TX+ TX+ TX- TX- PHY Ethernet (10/100) Coupling Transformers RX+ RX+ RX- RX- NSP4201MR6 VCC GND N/C N/C Figure 10. Protection for Ethernet 10/100 (Differential mode) R1 RTIP R3 R2 RRING T1 VCC T1/E1 TRANCEIVER NSP4201MR6 R4 TTIP R5 TRING T2 Figure 11. TI/E1 Interface Protection www.onsemi.com 5 NSP4201MR6 PACKAGE DIMENSIONS TSOP-6 CASE 318G-02 ISSUE V D H EE EE 6 E1 1 NOTE 5 5 2 4 L2 GAUGE PLANE E 3 L M b SEATING PLANE DIM A A1 b c D E E1 e L L2 M DETAIL Z e 0.05 C NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.15 PER SIDE. DIMENSIONS D AND E1 ARE DETERMINED AT DATUM H. 5. PIN ONE INDICATOR MUST BE LOCATED IN THE INDICATED ZONE. A c A1 DETAIL Z MIN 0.90 0.01 0.25 0.10 2.90 2.50 1.30 0.85 0.20 0 MILLIMETERS NOM MAX 1.00 1.10 0.06 0.10 0.38 0.50 0.18 0.26 3.00 3.10 2.75 3.00 1.50 1.70 0.95 1.05 0.40 0.60 0.25 BSC 10 - RECOMMENDED SOLDERING FOOTPRINT* 6X 0.60 6X 3.20 0.95 0.95 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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