VS-1N5820, VS-1N5820-M3 www.vishay.com Vishay Semiconductors Schottky Rectifier, 3.0 A FEATURES * Low profile, axial leaded outline * High frequency operation Cathode Anode * Very low forward voltage drop * High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance C-16 * Guard ring for enhanced ruggedness and long term reliability * Compliant to RoHS Directive 2002/95/EC PRODUCT SUMMARY Package DO-201AD (C-16) IF(AV) 3A * Designed and qualified for commercial level * Halogen-free according to IEC 61249-2-21 definition (-M3 only) VR 20 V VF at IF See Electrical table IRM max. 20 mA at 100 C TJ max. 150 C Diode variation Single die EAS See Electrical table DESCRIPTION The VS-1N5820... axial leaded Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection. MAJOR RATINGS AND CHARACTERISTICS CHARACTERISTICS SYMBOL IF(AV) Rectangular waveform VALUES UNITS 3.0 A 20 V 450 A VRRM IFSM tp = 5 s sine VF 3 Apk, TJ = 25 C TJ Range 0.475 V - 65 to 150 C VOLTAGE RATINGS PARAMETER SYMBOL VR Maximum DC reverse voltage VS-1N5820 VS-1N5820-M3 UNITS 20 20 V VRWM Maximum working peak reverse voltage ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Maximum average forward current IF(AV) Maximum peak one cycle non-repetitive surge current at TJ = 25 C IFSM Revision: 11-Oct-11 TEST CONDITIONS VALUES 50 % duty cycle at TL = 114 C, rectangular waveform With cooling fins 3.0 5 s sine or 3 s rect. pulse 450 10 ms sine or 6 ms rect. pulse Following any rated load condition and with rated VRRM applied UNITS A 90 Document Number: 93257 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-1N5820, VS-1N5820-M3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL Maximum forward voltage drop VFM (1) Maximum reverse leakage current IRM (1) Typical junction capacitance Typical series inductance Maximum voltage rate of change TEST CONDITIONS 3A TJ = 25 C 9.4 A TJ = 25 C VR = Rated VR TJ = 100 C TYP. MAX. 0.41 0.475 0.49 0.85 0.05 2.0 8.1 20 - UNITS V mA CT VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 C 350 LS Measured lead to lead 5 mm from package body 9.0 - nH - 10 000 V/s dV/dt Rated VR pF Note (1) Pulse width < 300 s, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and storage temperature range TJ (1), TEST CONDITIONS TStg VALUES UNITS - 65 to 150 C Maximum thermal resistance, junction to lead RthJL With fin 20 x 20 (0.79 x 0.79) 1.0 thick 34 Maximum thermal resistance, junction to ambient RthJA DC operation Without cooling fin 80 1.2 Approximate weight Marking device C/W g 0.042 Case style C-16 oz. 1N5820 Note (1) dP tot 1 ------------- < -------------- thermal runaway condition for a diode on its own heatsink dT J R thJA Revision: 11-Oct-11 Document Number: 93257 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-1N5820, VS-1N5820-M3 Vishay Semiconductors 100 Allowable Lead Temperature (C) IF - Instantaneous Forward Current (A) www.vishay.com 10 1 TJ = 150 C TJ = 125 C TJ = 25 C 150 140 130 DC 120 Square wave (D = 0.5) 110 100 see note (1) 0.1 90 0 0.2 0.4 0.6 0.8 0 1 VFM - Forward Voltage Drop (V) Fig. 1 - Maximum Forward Voltage Drop Characteristics 93257_01 1 1.5 2 2.5 3 3.5 4 4.5 IF(AV) - Average Forward Current (A) 93257_04 Fig. 4 - Typical Average Forward Current vs. Allowable Lead Temperature 1.4 100 D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75 Average Power Loss (W) TJ = 150 C IR - Reverse Current (mA) 0.5 TJ = 125 C 10 TJ = 100 C 1 TJ = 75 C 0.1 TJ = 50 C TJ = 25 C 0.01 1.2 1 0.8 RMS Limit 0.6 DC 0.4 0.2 0.001 0 0 5 10 15 20 VR - Reverse Voltage (V) 93257_02 0 100 15 VR - Reverse Voltage (V) 93257_03 Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage 20 IFSM - Non-Repetitive Surge Current (A) CT - Junction Capacitance (pF) TJ = 25 C 10 1.5 2 2.5 3 3.5 4 4.5 Fig. 5 - Maximum Average Forward Dissipation vs. Average Forward Current 1000 5 1 Average Forward Current - IF(AV) (A) 93257_05 Fig. 2 - Typical Peak Reverse Current vs. Reverse Voltage 0 0.5 1000 TJ = 25 C 100 At Any Rated Load Condition And With rated VRRM Applied Following Surge 10 10 93257_06 100 1000 10 000 tp - Square Wave Pulse Duration (s) Fig. 6 - Maximum Peak Surge Forward Current vs. Pulse Duration Note (1) Formula used: T = T - (Pd + Pd C J REV) x RthJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D) Revision: 11-Oct-11 Document Number: 93257 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-1N5820, VS-1N5820-M3 www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- 1N5820 TR -M3 1 2 3 4 1 - Vishay Semiconductors product 2 - Part number: 3 A, 20 V 3 - TR = Tape and reel package None = Bulk package 4 - Environmental digit None = Lead (Pb)-free and RoHS compliant -M3 = Halogen-free, RoHS compliant, and terminations lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION VS-1N5820 500 500 Bulk VS-1N5820TR 1200 1200 Tape and reel VS-1N5820-M3 500 500 Bulk VS-1N5820TR-M3 1200 1200 Tape and reel LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95242 Part marking information www.vishay.com/doc?95304 Packaging information www.vishay.com/doc?95338 Revision: 11-Oct-11 Document Number: 93257 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors Axial DO-204AL (DO-41) DIMENSIONS in millimeters (inches) 2.70 (0.106) DIA. 2.29 (0.090) Cathode band 27.0 (1.06) MIN. (2 places) 5.21 (0.205) MAX. 27.0 (1.06) MIN. (2 places) 1.27 (0.050) MAX. Flash (2 places) 5.21 (0.205) MAX. 0.86 (0.034) DIA. 0.72 (0.028) (2 places) 0.86 (0.034) DIA. 0.72 (0.028) (2 places) 2.70 (0.106) DIA. 2.29 (0.090) Revision: 29-Aug-11 Document Number: 95241 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000