ZXM62P03E6 30V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS=-30V; RDS(ON)=0.15 ID=-2.6A DESCRIPTION This new generation of high density MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES * Low on-resistance * Fast switching speed SOT23-6 * Low threshold * Low gate drive * SOT23-6 package APPLICATIONS * DC - DC converters * Power management functions * Disconnect switches * Motor control ORDERING INFORMATION DEVICE REEL SIZE (inches) TAPE WIDTH (mm) QUANTITY PER REEL ZXM62P03E6TA 7 8 embossed 3,000 ZXM62P03E6TC 13 8 embossed 10,000 Pinout DEVICE MARKING 2P03 Top view ISSUE 1 - OCTOBER 2005 1 SEMICONDUCTORS ZXM62P03E6 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Drain-Source Voltage V DSS 20 V Gate Source Voltage V GS 12 V 1.5 1.2 A A Continuous Drain Current (V GS =4.5V; T A =25C)(a) I D (V GS =4.5V; T A =70C)(a) LIMIT UNIT Pulsed Drain Current (c) I DM 7.4 Continuous Source Current (Body Diode) IS 0.54 A Pulsed Source Current (Body Diode) I SM 7.4 A Power Dissipation at T A =25C (a) Linear Derating Factor PD 625 5 mW mW/C Power Dissipation at T A =25C (b) Linear Derating Factor PD 806 6.4 mW mW/C Operating and Storage Temperature Range T j :T stg -55 to +150 C VALUE UNIT THERMAL RESISTANCE PARAMETER SYMBOL Junction to Ambient (a) R JA 113 C/W Junction to Ambient (b) R JA 73 C/W NOTES: (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions (b) For a device surface mounted on FR4 PCB measured at t5 secs. (c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph. ISSUE 1 - OCTOBER 2005 2 SEMICONDUCTORS ZXM62P03E6 CHARACTERISTICS ISSUE 1 - OCTOBER 2005 3 SEMICONDUCTORS ZXM62P03E6 ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated) PARAMETER SYMBOL MIN. Drain-Source Breakdown Voltage V (BR)DSS -30 Zero Gate Voltage Drain Current I DSS Gate-Body Leakage I GSS Gate-Source Threshold Voltage V GS(th) TYP. MAX. UNIT CONDITIONS STATIC I D =-250A, V GS =0V -1 A V DS =-30V, V GS =0V 100 nA V GS =20V, V DS =0V V I =-250A, V DS = V GS V GS =-10V, I D =-1.6A V GS =-4.5V, I D =-0.8A S V DS =-10V,I D =-0.8A -1.0 Static Drain-Source On-State Resistance R DS(on) (1) Forward Transconductance (3) V 0.15 0.23 1.1 g fs D DYNAMIC (3) Input Capacitance C iss 330 pF Output Capacitance C oss 120 pF Reverse Transfer Capacitance C rss 45 pF Turn-On Delay Time t d(on) 2.8 ns Rise Time tr 6.4 ns Turn-Off Delay Time t d(off) 13.9 ns Fall Time tf 10.3 ns Total Gate Charge Qg 10.2 nC Gate-Source Charge Q gs 1.5 nC Gate Drain Charge Q gd 3 nC Diode Forward Voltage (1) V SD -0.95 Reverse Recovery Time (3) t rr Reverse Recovery Charge(3) Q rr V DS =-25 V, V GS =0V, f=1MHz SWITCHING (2) (3) V DD =-15V, I D =-1.6A R G =6.2, R D =25 (Refer to test circuit) V DS =-24V,V GS =-10V, I D =-1.6A (Refer to test circuit) SOURCE-DRAIN DIODE V T j =25C, I S =-1.6A, V GS =0V 19.9 ns T j =25C, I F =-1.6A, di/dt= 100A/s 13 nC (1) Measured under pulsed conditions. Width=300s. Duty cycle 2%. (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing. ISSUE 1 - OCTOBER 2005 4 SEMICONDUCTORS ZXM62P03E6 TYPICAL CHARACTERISTICS ISSUE 1 - OCTOBER 2005 5 SEMICONDUCTORS ZXM62P03E6 -VGS - Gate-Source Voltage (V) TYPICAL CHARACTERISTICS 600 C - Capacitance (pF) Vgs=0V f=1Mhz 500 Ciss Coss Crss 400 300 200 100 0 0.1 1 10 100 10 ID=-1.6A 9 8 7 VDS=-15V VDS=-24V 6 5 4 3 2 1 0 0 1 2 3 4 5 6 7 8 9 10 -VDS - Drain Source Voltage (V) Q -Charge (nC) Capacitance v Drain-Source Voltage Gate-Source Voltage v Gate Charge ISSUE 1 - OCTOBER 2005 6 SEMICONDUCTORS ZXM62P03E6 PACKAGE OUTLINE PAD LAYOUT DETAILS 0.95 0.037 1.06 0.042 2.2 0.087 0.65 0.026 DIM Millimeters Inches Min. Max. Min. Max. A 0.90 1.45 0.35 0.057 A1 0.00 0.15 0 0.006 A2 0.90 1.30 0.035 0.051 b 0.35 0.50 0.014 0.019 C 0.09 0.20 0.0035 0.008 D 2.80 3.00 0.110 0.118 E 2.60 3.00 0.102 0.118 E1 1.50 1.75 0.059 0.069 L 0.10 0.60 0.004 0.002 e 0.95 REF e1 L 0.037 REF 1.90 REF 0 mm inches 0.074 REF 10 0 10 (c) Zetex Semiconductors plc 2005 Europe Americas Asia Pacific Corporate Headquarters Zetex GmbH Streitfeldstrae 19 D-81673 Munchen Germany Zetex Inc 700 Veterans Memorial Hwy Hauppauge, NY 11788 USA Zetex (Asia) Ltd 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Zetex Semiconductors plc Zetex Technology Park Chadderton, Oldham, OL9 9LL United Kingdom Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 europe.sales@zetex.com Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 usa.sales@zetex.com Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com Telephone (44) 161 622 4444 Fax: (44) 161 622 4446 hq@zetex.com These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on to www.zetex.com ISSUE 1 - OCTOBER 2005 7 SEMICONDUCTORS