International Rectifier HEXFET Power MOSFET Isolated Package @ High Voltage Isolation= 2.5KVRMS Sink to Lead Creepage Dist.= 4.8mm 175C Operating Temperature Dynamic dv/dt Rating Low Thermal Resistance Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low PD-9.859 IRFIZ14G Vogs = 60V Rpsvon) = 0.200 5 Ip = 8.0A on-resistance and cost-effectiveness. The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industrial applications. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The Fullpak is mounted to a heatsink using a single clip or by a single screw fixing. Absolute Maximum Ratings TO-220 FULLPAK | Parameter Max. Units | to @ To = 25C | Continuous Drain Current, Veg @ 10 V 8.0 lp @ Tc = 100C | Continuous Drain Current, Vas @ 10 V 5.7 A Ibm Pulsed Drain Current 32 Pp @ Tc = 25C | Power Dissipation 27 WwW Linear Derating Factor 0.18 WIC Ves Gate-to-Source Voltage +20 Vv Eas Single Pulse Avalanche Energy @ 47 mJ dv/dt Peak Diode Recovery dv/dt 4.5 Vins Tu Operating Junction and -65 to +175 Tste Storage Temperature Range C Soldering Temperature, for 10 seconds 300 (1.6mm from case) Mounting Torque, 6-32 or M3 screw 10 Ibf-in (1.1 Nem) Thermal Resistance Parameter Min. Typ. [ Max. Units Rac dunction-to-Case | 55 oC Rava Junction-to-Ambient _ _ | 65 851IRFIZ14G Electrical Characteristics @ Ty = 25C (unless otherwise specified) Parameter Min. | Typ. | Max. | Units Test Conditions Vierypss Drain-to-Source Breakdown Voltage 60 _ - V_ | Vas=0V, Ip= 250A AVierypss/AT,| Breakdown Voltage Temp. Coefficient | 0.63; | VC | Reference to 25C, Ip= 1mA Rosion) Static Drain-to-Source On-Resistance _- | 0.20] Q | Vas=10V, Ip=4.8A @ Vascth) Gate Threshold Voltage 2.0 _ 4.0 Vs { Vos=Vas, lo= 250uA Os Forward Transconductance 2.2 _ _ S| Vos=25V, Ip=4.8A @ Ipss Drain-to-Source Leakage Current 128 HA Vns=60V, Vas=OV _ 250 Vps=48V, Ves=0V, Ty=150C lass Gate-to-Saurce Forward Leakage _ _ 100 nA Ves=20V Gate-to-Source Reverse Leakage = _ | -100 Vaes=-20V Qg Total Gate Charge _ _ 11 ID=10A Qos Gate-to-Source Charge - _ 3.1 nC | Vpg=48V Qo Gate-to-Drain ("Miller") Charge _ _ 5.8 Vas=10V See Fig. 6 and 13 @ ta(on) Turn-On Delay Time _ 10 _ Vop=30V tr Rise Time _- 50 _ ns Ip=10A tatort) Turn-Off Delay Time 13 Re=242 t Fall Time _ 19 _ Ro=2.7Q See Figure 10 @ Lo Internal Drain Inductance _ 4.5 _ Bom (oan) J nH | from package (eS Ls Internal Source Inductance 175) and center of die contact 8 Cis Input Capacitance _ 300 _ Vaes=0V Coss Output Capacitance | 160) pF | Vps= 25V Crsg Reverse Transfer Capacitance = | 29 _ | f=t.0OMHz See Figure 5 Cc Drain to Sink Capacitance _ | 12 _ | pF f=1.0MHz Source-Drain Ratings and Characteristics [ Parameter Min. | Typ. | Max. | Units Test Conditions Is Continuous Source Current | |} go MOSFET symbol (Body Diode) A showing the ism Pulsed Source Current _ _ 32 integral reverse (Body Diode) p-n junction diode. 8 Vsp Diode Forward Voltage | | 1.6 | V_ | Ty=25C, Is=8.0A, Ves=0V tr Reverse Recovery Time 70 | 140 | ns | Ty=25C, Ir=10A Qn Reverse Recovery Charge | 020 | 0.40) pC jdifdi=100Ais ton Forward Turn-On Time Intrinsic turn-on time is neglegible {turn-on is dominated by Ls+Lp) Notes: Repetitive rating; pulse width limited by Ispsi0A, di/dt<90A/us, Vop<V(BR)Dss, t=60s, f=60Hz max. junction temperature (See Figure 11) Tyst75C @ Vpp=25V, starting Ty=25C, L=856uH Pulse width < 300 ps; duty cycle <2%, R@=25Q, las=8.0A (See Figure 12) 852Ip, Drain Current (Amps) Ip, Drain Current (Amps) 20us PULSE WIDTH To = 25C to~! 100 101 Vos, Drain-to-Source Voltage (volts) Fig 1. Typical Output Characteristics, Tco=25C Vpg = 25V 20us PULSE WIDTH 4 10 Vas, Gate-to-Source Voltage (volts) Fig 3. Typical Transfer Characteristics Rpson), Drain-to-Source On Resistance Ip, Drain Current (Amps) (Normalized) IRFIZ14G 20us PULSE WIDTH To = 175C 107 104 Vps, Drain-to-Source Voltage (volts) Fig 2. Typical Output Characteristics, To=175C Ves = 10V 0 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 Ty, Junction Temperature (C) Fig 4. Normalized On-Resistance Vs. Temperature 853IRFIZ14G 600 ny o 500 & S$ 3 a i tw fas Capacitance (pF) B Css Ves, Gate-to-Source Voltage (volts) SEE FIGURE 13 0 100 104 Vps. Drain-to-Source Voltage (volts) Qg, Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs. Drain-to-Source Voltage Gate-to-Source Voltage 103 OPERATION IN THIS AREA LIMITED e 5 . BY Rps (oN) E = Be e E 2 10 a ~ oO 5 5 & = = 6 3, Cc @ S 2 _ 10 a > = o QO 5 & 8 - e|ry=175C - Ves = OV INGLE PULSE 0.0 0. 1.0 1.5 2.0 2.5 1 2 5 ig 2 5 492 2 5 493 Vsp, Source-to-Drain Voltage (volts) Vps, Drain-to-Source Voltage (volts) Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area Forward Voltage 854Ip, Drain Current (Amps) IRFIZ14G Ro Vos > WAY D.U.T. 8.0 = Vop IPiov 6.0 Pulse Width < tps Duty Factor < 0.1% + to Fig 10a. Switching Time Test Circuit Vos [NN 90% \ 2.0 . | 0.0 10% {\ "25 50 75 100 125 450 175 Vas XT To, Case Temperature (C) tdion) tr tafot) tt Fig 9. Maximum Drain Current Vs. Fig 10b. Switching Time Waveforms Case Temperature Fig 11. oO 3 N @ ft a Cc o a an c SINGLE PULSE : Eo. (THERMAL RESPONSE) 7 : aa a perl! NOTES: 4. DUTY FACTOR, O=ti/t2 2. PEAK Ty=Pom x Zthjc + Te 10 10-4 1o3 10? 0.4 1 10 t;, Rectangular Pulse Duration (seconds) Maximum Effective Transient Thermal Impedance, Junction-to-Case 855IRFIZ14G Vary tp to obtain Vos > required las Ip TOP 3.34 5.74 TTIM 8.0A Eas, Single Pulse Energy (mJ) = 25v Vps 25 50 75 100 125 150 475 Starting Ty, Junction Temperature(C) lag wee ee Fig 12c. Maximum Avalanche Energy Fig 12b. Unclamped Inductive Waveforms Vs. Drain Current Current Regulator bee me ee ee lg = Ip Current Sampling Resistors Charge Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit Appendix A: Figure 14, Peak Diode Recovery dv/dt Test Circuit - See page 1505 Appendix B: Package Outline Mechanical Drawing See page 1510 Appendix C: Part Marking Information ~ See page 1517 Intemational Rectifier 856