ZXTN25100BFH
Issue 1 - May 2006 4 www.zetex.com
© Zetex Semiconductors plc 2006
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
Parameter Symbol Min. Typ. Max. Unit Conditions
Collector-base breakdown
voltage
BVCBO 170 220 V IC = 100A
Collector-emitter breakdown
voltage (forward blocking)
BVCEX 170 210 IC = 100A, RBE < 1k or
-1V < VBE < 0.25V
Collector-emitter breakdown
voltage (base open)
BVCEO 100 120 V IC = 10mA (*)
NOTES:
(*) Measured under pulsed conditions. Pulse width 300s; duty cycle 2%.
Emitter-collector breakdown
voltage (reverse blocking)
BVECX 67 VI
E = 100A, RBC < 1k or
0.25V > VBC > -0.25V
Emitter-collector breakdown
voltage (base open)
BVECO 68.4 VI
E = 100A,
Emitter-base breakdown
voltage
BVEBO 78 VI
E = 100A
Collector cut-off current ICBO <1 50
20
nA
A
VCB = 136V
VCB = 136V, Tamb= 100°C
Collector emitter cut-off current ICEX -100nAV
CE = 136V; RBE < 1k or
-1V < VBE < 0.25V
Emitter cut-off current IEBO <1 50 nA VEB = 5.6V
Collector-emitter saturation
voltage
VCE(sat) 40 55 mV IC = 0,5A, IB = 50mA(*)
100 135 mV IC = 0,5A, IB = 10mA(*)
70 80 mV IC = 1A, IB = 100mA(*)
200 250 mV IC = 3A, IB = 300mA(*)
Base-emitter saturation voltage VBE(sat) 940 1050 mV IC = 3A, IB = 300mA(*)
Base-emitter turn-on voltage VBE(on) 890 1000 mV IC = 3A, VCE = 2V(*)
Static forward current transfer
ratio
hFE 100 200 300 IC = 10mA, VCE = 2V(*)
50 85 IC = 1A, VCE = 2V(*)
20 IC = 3A, VCE = 2V(*)
Transition frequency fT160 MHz IC = 100mA, VCE = 5V
f = 100MHz
Output capacitance COBO 9.4 20 pF VCB = 10V, f = 1MHz(*)
Delay time t(d) 16 ns VCC = 10V. IC = 500mA,
IB1 = IB2= 50mA.
Rise time t(r) 55 ns
Storage time t(s) 677 ns
Fall time t(f) 95 ns