ZXTN25100BFH 100V, SOT23, medium power transistor Summary BVCEX > 170V BVCEO > 100V BVECO > 6V IC(cont) = 3A VCE(sat) < 80mV @ 1A RCE(sat) = 67m PD = 1.25W Complementary part number ZXTP25100BFH Description C Advanced process capability and package design have been used to maximize the power handling and performance of this small outline transistor. The compact size and ratings of this device make it ideally suited to applications where space is at a premium. B Features * High power dissipation SOT23 package * Low saturation voltage * 170V forward blocking voltage E Applications E * Lamp relay and solenoid drivers * General switching in automotive and industrial applications * Motor drive and control C B Ordering information Device Pinout - top view Reel size (inches) Tape width (mm) Quantity per reel 7 8 3,000 ZXTN25100BFHTA Device marking 021 Issue 1 - May 2006 (c) Zetex Semiconductors plc 2006 1 www.zetex.com ZXTN25100BFH Absolute maximum ratings Parameter Symbol Limit Unit Collector-base voltage VCBO 170 V Collector-emitter voltage (forward blocking) VCEX 170 V Collector-emitter voltage VCEO 100 V Emitter-collector voltage (reverse blocking) VECO 6 V Emitter-base voltage VEBO 7 V IC 3 A Peak pulse current ICM 9 A Power dissipation at Tamb =25C(a) PD 0.73 W 5.84 mW/C 1.05 W 8.4 mW/C 1.25 W 9.6 mW/C 1.81 W 14.5 mW/C Tj, Tstg - 55 to 150 C Symbol Limit Unit Junction to ambient(a) RJA 171 C/W Junction to ambient(b) RJA 119 C/W Junction to ambient(c) RJA 100 C/W Junction to ambient(d) RJA 69 C/W Continuous collector current(b) Linear derating factor PD Power dissipation at Tamb =25C(b) Linear derating factor PD Power dissipation at Tamb =25C(c) Linear derating factor PD Power dissipation at Tamb =25C(d) Linear derating factor Operating and storage temperature range Thermal resistance Parameter NOTES: (a) For a device surface mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (b) Mounted on 25mm x 25mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions. (c) Mounted on 50mm x 50mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions. (d) As (c) above measured at t<5secs. Issue 1 - May 2006 (c) Zetex Semiconductors plc 2006 2 www.zetex.com ZXTN25100BFH Characteristics Issue 1 - May 2006 (c) Zetex Semiconductors plc 2006 3 www.zetex.com ZXTN25100BFH ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated) Parameter Symbol Min. Typ. Collector-base breakdown voltage BVCBO 170 220 Collector-emitter breakdown voltage (forward blocking) BVCEX 170 210 Collector-emitter breakdown voltage (base open) BVCEO 100 120 V IC = 10mA (*) Emitter-collector breakdown voltage (reverse blocking) BVECX 6 7 V IE = 100A, RBC < 1k or 0.25V > VBC > -0.25V Emitter-collector breakdown voltage (base open) BVECO 6 8.4 V IE = 100A, Emitter-base breakdown voltage BVEBO 7 8 V IE = 100A Collector cut-off current ICBO Collector emitter cut-off current ICEX Max. Unit Conditions V IC = 100A IC = 100A, RBE < 1k or -1V < VBE < 0.25V <1 50 20 nA A VCB = 136V VCB = 136V, Tamb= 100C - 100 nA VCE = 136V; RBE < 1k or -1V < VBE < 0.25V VEB = 5.6V Emitter cut-off current IEBO <1 50 nA Collector-emitter saturation voltage VCE(sat) 40 55 mV I = 0,5A, I = 50mA(*) C B 100 135 mV I = 0,5A, I = 10mA(*) C B 70 80 mV I = 1A, I = 100mA(*) C B 200 250 mV I = 3A, I = 300mA(*) C B Base-emitter saturation voltage VBE(sat) 940 1050 mV I = 3A, I = 300mA(*) C B Base-emitter turn-on voltage VBE(on) 890 1000 mV I = 3A, V = 2V(*) C CE Static forward current transfer ratio hFE 100 200 300 50 85 IC = 1A, VCE = 2V(*) 20 IC = 3A, VCE = 2V(*) Transition frequency fT 160 Output capacitance COBO 9.4 Delay time t(d) Rise time IC = 10mA, VCE = 2V(*) MHz IC = 100mA, VCE = 5V f = 100MHz 20 pF VCB = 10V, f = 1MHz(*) 16 ns t(r) 55 ns VCC = 10V. IC = 500mA, IB1 = IB2= 50mA. Storage time t(s) 677 ns Fall time t(f) 95 ns NOTES: (*) Measured under pulsed conditions. Pulse width 300s; duty cycle 2%. Issue 1 - May 2006 (c) Zetex Semiconductors plc 2006 4 www.zetex.com ZXTN25100BFH Typical characteristics Issue 1 - May 2006 (c) Zetex Semiconductors plc 2006 5 www.zetex.com ZXTN25100BFH Package outline - SOT23 L H N G D 3 leads M A B C K Dim. F Millimeters Inches Min. Max. Min. Max. A 2.67 3.05 0.105 0.120 B 1.20 1.40 0.047 C - 1.10 D 0.37 F 0.085 G Dim. Millimeters Inches Min. Max. Max. Max. H 0.33 0.51 0.013 0.020 0.055 K 0.01 0.10 0.0004 0.004 - 0.043 L 2.10 2.50 0.083 0.0985 0.53 0.015 0.021 M 0.45 0.64 0.018 0.025 0.15 0.0034 0.0059 N 0.95 NOM - - 1.90 NOM 0.075 NOM 0.0375 NOM - - - Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches Europe Americas Asia Pacific Corporate Headquarters Zetex GmbH Streitfeldstrae 19 D-81673 Munchen Germany Zetex Inc 700 Veterans Memorial Highway Hauppauge, NY 11788 USA Zetex (Asia Ltd) 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Zetex Semiconductors plc Zetex Technology Park, Chadderton Oldham, OL9 9LL United Kingdom Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 europe.sales@zetex.com Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 usa.sales@zetex.com Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com Telephone: (44) 161 622 4444 Fax: (44) 161 622 4446 hq@zetex.com For international sales offices visit www.zetex.com/offices Zetex products are distributed worldwide. For details, see www.zetex.com/salesnetwork This publication is issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contact or be regarded as a representation relating to the products or services concerned. The company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. Issue 1 - May 2006 (c) Zetex Semiconductors plc 2006 6 www.zetex.com