Issue 1 - May 2006 1 www.zetex.com
© Zetex Semiconductors plc 2006
ZXTN25100BFH
100V, SOT23, medium power transistor
Summary
BVCEX > 170V
BVCEO > 100V
BVECO > 6V
IC(cont) = 3A
VCE(sat) < 80mV @ 1A
RCE(sat) = 67m
PD = 1.25W
Complementary part number ZXTP25100BFH
Description
Advanced process capability and package design have been used to
maximize the power handling and performance of this small outline
transistor. The compact size and ratings of this device make it ideally
suited to applications where space is at a premium.
Features
• High power dissipation SOT23 package
• Low saturation voltage
• 170V forward blocking voltage
Applications
• Lamp relay and solenoid drivers
• General switching in automotive and industrial applications
• Motor drive and control
Ordering information
Device marking
021
Device Reel size (inches) Tape width
(mm)
Quantity per reel
ZXTN25100BFHTA 7 8 3,000
C
E
B
C
E
B
Pinout - top view
ZXTN25100BFH
Issue 1 - May 2006 2 www.zetex.com
© Zetex Semiconductors plc 2006
Absolute maximum ratings
NOTES:
(a) For a device surface mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in
still air conditions.
(b) Mounted on 25mm x 25mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions.
(c) Mounted on 50mm x 50mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions.
(d) As (c) above measured at t<5secs.
Parameter Symbol Limit Unit
Collector-base voltage VCBO 170 V
Collector-emitter voltage (forward blocking) VCEX 170 V
Collector-emitter voltage VCEO 100 V
Emitter-collector voltage (reverse blocking) VECO 6V
Emitter-base voltage VEBO 7V
Continuous collector current(b) IC3A
Peak pulse current ICM 9A
Power dissipation at Tamb =25°C(a) PD 0.73 W
Linear derating factor 5.84 mW/°C
Power dissipation at Tamb =25°C(b) PD1.05 W
Linear derating factor 8.4 mW/°C
Power dissipation at Tamb =25°C(c) PD1.25 W
Linear derating factor 9.6 mW/°C
Power dissipation at Tamb =25°C(d) PD1.81 W
Linear derating factor 14.5 mW/°C
Operating and storage temperature range Tj, Tstg - 55 to 150 °C
Thermal resistance
Parameter Symbol Limit Unit
Junction to ambient(a) RJA 171 °C/W
Junction to ambient(b) RJA 119 °C/W
Junction to ambient(c) RJA 100 °C/W
Junction to ambient(d) RJA 69 °C/W
ZXTN25100BFH
Issue 1 - May 2006 4 www.zetex.com
© Zetex Semiconductors plc 2006
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
Parameter Symbol Min. Typ. Max. Unit Conditions
Collector-base breakdown
voltage
BVCBO 170 220 V IC = 100A
Collector-emitter breakdown
voltage (forward blocking)
BVCEX 170 210 IC = 100A, RBE < 1k or
-1V < VBE < 0.25V
Collector-emitter breakdown
voltage (base open)
BVCEO 100 120 V IC = 10mA (*)
NOTES:
(*) Measured under pulsed conditions. Pulse width 300s; duty cycle 2%.
Emitter-collector breakdown
voltage (reverse blocking)
BVECX 67 VI
E = 100A, RBC < 1k or
0.25V > VBC > -0.25V
Emitter-collector breakdown
voltage (base open)
BVECO 68.4 VI
E = 100A,
Emitter-base breakdown
voltage
BVEBO 78 VI
E = 100A
Collector cut-off current ICBO <1 50
20
nA
A
VCB = 136V
VCB = 136V, Tamb= 100°C
Collector emitter cut-off current ICEX -100nAV
CE = 136V; RBE < 1k or
-1V < VBE < 0.25V
Emitter cut-off current IEBO <1 50 nA VEB = 5.6V
Collector-emitter saturation
voltage
VCE(sat) 40 55 mV IC = 0,5A, IB = 50mA(*)
100 135 mV IC = 0,5A, IB = 10mA(*)
70 80 mV IC = 1A, IB = 100mA(*)
200 250 mV IC = 3A, IB = 300mA(*)
Base-emitter saturation voltage VBE(sat) 940 1050 mV IC = 3A, IB = 300mA(*)
Base-emitter turn-on voltage VBE(on) 890 1000 mV IC = 3A, VCE = 2V(*)
Static forward current transfer
ratio
hFE 100 200 300 IC = 10mA, VCE = 2V(*)
50 85 IC = 1A, VCE = 2V(*)
20 IC = 3A, VCE = 2V(*)
Transition frequency fT160 MHz IC = 100mA, VCE = 5V
f = 100MHz
Output capacitance COBO 9.4 20 pF VCB = 10V, f = 1MHz(*)
Delay time t(d) 16 ns VCC = 10V. IC = 500mA,
IB1 = IB2= 50mA.
Rise time t(r) 55 ns
Storage time t(s) 677 ns
Fall time t(f) 95 ns
ZXTN25100BFH
Issue 1 - May 2006 6 www.zetex.com
© Zetex Semiconductors plc 2006
For international sales offices visit www.zetex.com/offices
Zetex products are distributed worldwide. For details, see www.zetex.com/salesnetwork
This publication is issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or
reproduced for any purpose or form part of any order or contact or be regarded as a representation relating to the products or services concerned.
The company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.
Europe
Zetex GmbH
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D-81673 München
Germany
Telefon: (49) 89 45 49 49 0
Fax: (49) 89 45 49 49 49
europe.sales@zetex.com
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Hauppauge, NY 11788
USA
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Fax: (1) 631 360 8222
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Corporate Headquarters
Zetex Semiconductors plc
Zetex Technology Park, Chadderton
Oldham, OL9 9LL
United Kingdom
Telephone: (44) 161 622 4444
Fax: (44) 161 622 4446
hq@zetex.com
Package outline - SOT23
Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches
Dim. Millimeters Inches Dim. Millimeters Inches
Min. Max. Min. Max. Min. Max. Max. Max.
A 2.67 3.05 0.105 0.120 H 0.33 0.51 0.013 0.020
B 1.20 1.40 0.047 0.055 K 0.01 0.10 0.0004 0.004
C - 1.10 - 0.043 L 2.10 2.50 0.083 0.0985
D 0.37 0.53 0.015 0.021 M 0.45 0.64 0.018 0.025
F 0.085 0.15 0.0034 0.0059 N 0.95 NOM 0.0375 NOM
G 1.90 NOM 0.075 NOM - - - - -
L
N
H
G
A
C
F
B
M
K
D
3 leads
