MPSW01, MPSW01A One Watt High Current Transistors NPN Silicon http://onsemi.com Features * Pb-Free Packages are Available* COLLECTOR 3 MAXIMUM RATINGS Rating Collector -Emitter Voltage Collector -Base Voltage Symbol MPSW01 MPSW01A MPSW01 MPSW01A Emitter -Base Voltage VCEO VCBO Value Unit Vdc 30 40 5.0 Vdc Collector Current - Continuous IC 1000 mAdc Total Device Dissipation @ TA = 25C Derate above 25C PD 1.0 8.0 W mW/C Total Device Dissipation @ TC = 25C Derate above 25C PD 2.5 20 W mW/C TJ, Tstg -55 to +150 C THERMAL CHARACTERISTICS Characteristic 1 EMITTER Vdc 40 50 VEBO Operating and Storage Junction Temperature Range 2 BASE Symbol Max Unit Thermal Resistance, Junction-to-Ambient RqJA 125 C/W Thermal Resistance, Junction-to-Case RqJC 50 C/W Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 12 1 3 STRAIGHT LEAD BULK PACK 2 3 BENT LEAD TAPE & REEL AMMO PACK TO-92 1 WATT (TO-226) CASE 29-10 STYLE 1 MARKING DIAGRAM MPS W01x AYWW G G x = 01A Devices A = Assembly Location Y = Year WW = Work Week G = Pb-Free Package (Note: Microdot may be in either location) ORDERING INFORMATION *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. (c) Semiconductor Components Industries, LLC, 2010 August, 2010 - Rev. 6 1 See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. Publication Order Number: MPSW01/D MPSW01, MPSW01A ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max 30 40 - - 40 50 - - 5.0 - - - 0.1 0.1 - 0.1 55 60 50 - - - Unit OFF CHARACTERISTICS Collector -Emitter Breakdown Voltage (Note 1) (IC = 10 mAdc, IB = 0) MPSW01 MPSW01A Collector -Base Breakdown Voltage (IC = 100 mAdc, IE = 0) MPSW01 MPSW01A V(BR)CEO V(BR)CBO V(BR)EBO Emitter -Base Breakdown Voltage (IE = 100 mAdc, IC = 0) Collector Cutoff Current (VCB = 30 Vdc, IE = 0) (VCB = 40 Vdc, IE = 0) MPSW01 MPSW01A Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0) ICBO IEBO Vdc Vdc Vdc mAdc mAdc ON CHARACTERISTICS (Note 1) DC Current Gain (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 100 mAdc, VCE = 1.0 Vdc) (IC = 1000 mAdc, VCE = 1.0 Vdc) hFE - Collector -Emitter Saturation Voltage (IC = 1000 mAdc, IB = 100 mAdc) VCE(sat) - 0.5 Vdc Base-Emitter On Voltage (IC = 1000 mAdc, VCE = 1.0 Vdc) VBE(on) - 1.2 Vdc fT 50 - MHz Cobo - 20 pF SMALL-SIGNAL CHARACTERISTICS Current -Gain -- Bandwidth Product (IC = 50 mAdc, VCE = 10 Vdc, f = 20 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) 1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. ORDERING INFORMATION Package Shipping TO-92 5000 Units / Bulk MPSW01G TO-92 (Pb-Free) 5000 Units / Bulk MPSW01AG TO-92 (Pb-Free) 5000 Units / Bulk MPSW01ARLRAG TO-92 (Pb-Free) 2000 / Tape & Reel MPSW01ARLRPG TO-92 (Pb-Free) 2000 / Tape & Ammo Box Device MPSW01 For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 1.0 VCE , COLLECTOR VOLTAGE (VOLTS) 300 h FE , CURRENT GAIN 200 100 70 VCE = 1.0 V TJ = 25C 50 30 10 20 50 200 100 IC, COLLECTOR CURRENT (mA) 500 1000 Figure 1. DC Current Gain TJ = 25C 0.8 0.6 IC = 1000 mA 0.4 0.2 IC = 10 mA IC = 50 mA IC = IC = 500 mA IC = 250 mA 100 mA 0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 IB, BASE CURRENT (mA) 10 20 Figure 2. Collector Saturation Region http://onsemi.com 2 50 100 1.0 TJ = 25C VBE(sat) @ IC/IB = 10 0.8 V, VOLTAGE (VOLTS) qVB , TEMPERATURE COEFFICIENT (mV/ C) MPSW01, MPSW01A VBE(on) @ VCE = 1.0 V 0.6 0.4 0.2 VCE(sat) @ IC/IB = 10 0 5.0 10 20 -1.2 -1.6 qVB FOR VBE -2.0 -2.4 -2.8 50 100 200 500 1000 1.0 2.0 5.0 10 20 50 100 200 500 1000 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 3. "ON" Voltages Figure 4. Temperature Coefficient 80 300 TJ = 25C 200 70 VCE = 10 V TJ = 25C f = 20 MHz 50 60 C, CAPACITANCE (pF) 100 40 Cibo 20 Cobo 0 30 10 20 50 200 100 1000 Cobo Cibo IC, COLLECTOR CURRENT (mA) 5.0 1.0 10 2.0 Figure 6. Capacitance 1k 1.0 ms 100 ms 1.0 s 500 200 TA = 25C 100 TC = 25C DUTY CYCLE 10% CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT 50 20 10 1.0 MPSW01 MPSW01A 2.0 5.0 15 3.0 VR, REVERSE VOLTAGE (VOLTS) Figure 5. Current Gain -- Bandwidth Product IC , COLLECTOR CURRENT (mA) f T, CURRENT-GAIN - BANDWIDTH PRODUCT (MHz) 1.0 2.0 -0.8 10 20 30 40 VCE, COLLECTOR-EMITTER VOLTAGE (V) Figure 7. Active Region -- Safe Operating Area http://onsemi.com 3 20 4.0 25 5.0 MPSW01, MPSW01A PACKAGE DIMENSIONS TO-92 (TO-226) 1 WATT CASE 29-10 ISSUE O A B R STRAIGHT LEAD BULK PACK P L F K D X X G J H V C SECTION X-X N 1 N NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN DIMENSIONS P AND L. DIMENSIONS D AND J APPLY BETWEEN DI MENSIONS L AND K MINIMUM. THE LEAD DIMENSIONS ARE UNCONTROLLED IN DIMENSION P AND BEYOND DIMENSION K MINIMUM. DIM A B C D F G H J K L N P R V INCHES MIN MAX 0.175 0.205 0.290 0.310 0.125 0.165 0.018 0.021 0.016 0.019 0.045 0.055 0.095 0.105 0.018 0.024 0.500 --0.250 --0.080 0.105 --0.100 0.135 --0.135 --- MILLIMETERS MIN MAX 4.44 5.21 7.37 7.87 3.18 4.19 0.46 0.53 0.41 0.48 1.15 1.39 2.42 2.66 0.46 0.61 12.70 --6.35 --2.04 2.66 --2.54 3.43 --3.43 --- STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR A BENT LEAD TAPE & REEL AMMO PACK R B P T SEATING PLANE G K D X X J V 1 C N SECTION X-X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN DIMENSIONS P AND L. DIMENSIONS D AND J APPLY BETWEEN DIMENSIONS L AND K MINIMUM. THE LEAD DIMENSIONS ARE UNCONTROLLED IN DIMENSION P AND BEYOND DIMENSION K MINIMUM. DIM A B C D G J K N P R V INCHES MIN MAX 0.175 0.205 0.290 0.310 0.125 0.165 0.018 0.021 0.094 0.102 0.018 0.024 0.500 --0.080 0.105 --0.100 0.135 --0.135 --- MILLIMETERS MIN MAX 4.44 5.21 7.37 7.87 3.18 4.19 0.46 0.53 2.40 2.80 0.46 0.61 12.70 --2.04 2.66 --2.54 3.43 --3.43 --- ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. 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