| ~ SILICON NPN TRANSISTOR _ EPITAXIAL PLANAR TYPE (PCT PROCESS) j - Unit in mm i APPLICATIONS | sa LaLow Frequency, Low Power Amplifiers | | | 3 tGeneral-driver Stage Amplifiers o4s tr * : BGeneral purpose Switching Applications 055 a Z 0.45 | 2] 218 t ot 1 2 3 127) | 1.27 : Excellent hr; vs. Collector Current Characteristics, 3 tL x hee (2)=25min. at Vue=6V, I=400mA = Te max.~500mA oo -@Po max.=500mW 2 COLLECTOR -@Complementary to the 2SA 1270 3. BASE JEDEC TO-92 | MAXIMUM RATINGS (T225) - CHARACTERISTIC _|SYMBOL | RATING lunIT CHARACTERISTIC | SYMBOL) RATING {UNIT Collector Base Voltage Vepo 35 Vv Emitter Current I. 500 | mA -[CollectorEmitter Voltagel Vex 30 | V || Collector Power Dissipation! P. 500 | mW Emitter Base Voltage Vepo 5 Vv Junction Temperature Tj 150 Cc Collector Current Ic 500 mA || Storage Temperature Range Teg 55~150) Bf ELECTRICAL CHARACTERISTICS (Ta 257) . CHARACTERISTIC |) SYMBOL TEST CONDITION MIN. | TYP.|MAX.| UNIT Collector Cut off Current leno co=35V, Ie=0 > t= FOL | WA {Emitter Cut off Current lezo Ves=5V, Ic=0 - | - |0.1 | WA DC Current Gain (1) hee (1) Ver=1V, Ic=100mA 70 | = | 240 DC Current Gain (2) (pee) | Voe=6V, 1e=400mA 2 - | - Collector ~- Emitter Saturation Voltage Vee(sat) I-=100mA, Ip=10mA - 0.1 | 0.25; V Base~ Emitter Voltage Vor 1.=100mA, Vee=1V - | 0.8}0.1 |] Vv Transition Frequency fr Vee=6V, Ig= 20mA - 300 ~ |MHz Output Capacitance Cop ~ Vea=6V, Ie=0, f= 1MHz ~ 7/ - | pF a NOTE: According to hee (1), Classified as follows. 0 70 140 Y 120~240 337 | KEC