BZX84C2V4 - BZX84C51
Document number: DS18001 Rev. 30 - 2 1 of 5
www.diodes.com May 2012
© Diodes Incorporated
BZX84C2V4 - BZX84C51
350mW SURFACE MOUNT ZENER DIODE
Features
Planar Die Construction
350mW Power Dissipation
Zener Voltages from 2.4V - 51V
Ideally Suited for Automated Assembly Processes
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SOT23
Case Material: Molded Plastic. UL Flammability Classification
Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish annealed over Alloy 42 leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
Polarity: See Diagram
Weight: 0.008 grams (approximate)
Ordering Information (Note 5)
Part Number Qualification Case Packaging
(Type Number)-7-F Commercial SOT23 3,000/Tape & Reel
(Type Number)Q-7-F Automotive SOT23 3,000/Tape & Reel
(Type Number)-13-F Commercial SOT23 10,000/Tape & Reel
(Type Number)Q-13-F Automotive SOT23 10,000/Tape & Reel
*For (Type Number), please see the Electrical Characteristics Table. Example: 6.2V Zener = BZX84C6V2-7-F.
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. BZX84C2V4-BZX84C39 products manufactured with Date Code OW (week 42, 2009) and newer are built with Green Molding Compound. BZX84C2V4-
BZX84C39 products manufactured prior to Date Code OW are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire
Retardants. BZX84C43-BZX84C51 products manufactured with Date Code V9 (week 33, 2008) and newer are built with Green Molding Compound.
BZX84C43-BZX84C51 products manufactured prior to Date Code V9 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3
Fire Retardants.
5. For packaging details, go to our website at http://www.diodes.com.
Marking Information
Date Code Key
Year 1998 2002 2003 2004 2005 2006 2007 2008 2009 2010 2011 2012 2013 2014 2015 2016 2017
Code J N P R S T U V W X Y Z A B C D E
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
Top View Device Schematic
SOT23
K = SAT (Shanghai Assembly / Test site)
xx = Product Type Marking Code
(See Electrical Characteristics Table)
YM = Date Code Marking
Y = Year (ex: Z = 2012)
M = Month (ex: 9 = September)
C = CAT (Chengdu Assembly / Test site)
xx = Product Type Marking Code
(See Electrical Characteristics Table)
YM = Date Code Marking
Y = Year (ex: Z = 2012)
M = Month (ex: 9 = September)
Cxx
YM
Kxx
YM
BZX84C2V4 - BZX84C51
Document number: DS18001 Rev. 30 - 2 2 of 5
www.diodes.com May 2012
© Diodes Incorporated
BZX84C2V4 - BZX84C51
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic Symbol Value Unit
Forward Voltage @ IF = 10mA VF 0.9 V
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 6) PD 300 mW
Power Dissipation (Note 7) PD 350 mW
Thermal Resistance, Junction to Ambient Air (Note 6) R
θ
JA 417 °C/W
Thermal Resistance, Junction to Ambient Air (Note 7) R
θ
JA 357 °C/W
Operating and Storage Temperature Range TJ, TSTG -65 to +150 °C
Electrical Characteristics @TA = 25°C unless otherwise specified
Type
Number Marking
Code
Zener Voltage
Range
(Note 8)
Maximum Zener
Impedance
f = 1KHz
Maximum Reverse
Current
(Note 8)
Temperature
Coefficient
@ IZT
mV/°C
VZ @ IZT IZT ZZT @
IZT ZZK @ IZK I
R V
R Min Max
Nom (V) Min (V) Max (V) (mA) (
Ω
) (
Ω
) (mA) (μA) (V)
BZX84C2V4 ZB 2.4 2.2 2.6 5.0 100 600 1.0 50 1.0 -3.5 0
BZX84C2V7 ZC 2.7 2.5 2.9 5.0 100 600 1.0 20 1.0 -3.5 0
BZX84C3V0 ZD 3.0 2.8 3.2 5.0 95 600 1.0 10 1.0 -3.5 0
BZX84C3V3 ZE 3.3 3.1 3.5 5.0 95 600 1.0 5.0 1.0 -3.5 0
BZX84C3V6 ZF 3.6 3.4 3.8 5.0 90 600 1.0 5.0 1.0 -3.5 0
BZX84C3V9 ZG 3.9 3.7 4.1 5.0 90 600 1.0 3.0 1.0 -3.5 0
BZX84C4V3 ZH 4.3 4.0 4.6 5.0 90 600 1.0 3.0 1.0 -3.5 0
BZX84C4V7 Z1 4.7 4.4 5.0 5.0 80 500 1.0 3.0 2.0 -3.5 0.2
BZX84C5V1 Z2 5.1 4.8 5.4 5.0 60 480 1.0 2.0 2.0 -2.7 1.2
BZX84C5V6 Z3 5.6 5.2 6.0 5.0 40 400 1.0 1.0 2.0 -2.0 2.5
BZX84C6V2 Z4 6.2 5.8 6.6 5.0 10 150 1.0 3.0 4.0 0.4 3.7
BZX84C6V8 Z5 6.8 6.4 7.2 5.0 15 80 1.0 2.0 4.0 1.2 4.5
BZX84C7V5 Z6 7.5 7.0 7.9 5.0 15 80 1.0 1.0 5.0 2.5 5.3
BZX84C8V2 Z7 8.2 7.7 8.7 5.0 15 80 1.0 0.7 5.0 3.2 6.2
BZX84C9V1 Z8 9.1 8.5 9.6 5.0 15 100 1.0 0.5 6.0 3.8 7.0
BZX84C10 Z9 10 9.4 10.6 5.0 20 150 1.0 0.2 7.0 4.5 8.0
BZX84C11 Y1 11 10.4 11.6 5.0 20 150 1.0 0.1 8.0 5.4 9.0
BZX84C12 Y2 12 11.4 12.7 5.0 25 150 1.0 0.1 8.0 6.0 10.0
BZX84C13 Y3 13 12.4 14.1 5.0 30 170 1.0 0.1 8.0 7.0 11.0
BZX84C15 Y4 15 13.8 15.6 5.0 30 200 1.0 0.1 10.5 9.2 13.0
BZX84C16 Y5 16 15.3 17.1 5.0 40 200 1.0 0.1 11.2 10.4 14.0
BZX84C18 Y6 18 16.8 19.1 5.0 45 225 1.0 0.1 12.6 12.4 16.0
BZX84C20 Y7 20 18.8 21.2 5.0 55 225 1.0 0.1 14.0 14.4 18.0
BZX84C22 Y8 22 20.8 23.3 5.0 55 250 1.0 0.1 15.4 16.4 -
BZX84C24 Y9 24 22.8 25.6 5.0 70 250 1.0 0.1 16.8 18.4 -
BZX84C27 YA 27 25.1 28.9 2.0 80 300 0.5 0.1 18.9 21.4 -
BZX84C30 YB 30 28.0 32.0 2.0 80 300 0.5 0.1 21.0 24.4 -
BZX84C33 YC 33 31.0 35.0 2.0 80 325 0.5 0.1 23.1 27.4 -
BZX84C36 YD 36 34.0 38.0 2.0 90 350 0.5 0.1 25.2 30.4 -
BZX84C39 YE 39 37.0 41.0 2.0 130 350 0.5 0.1 27.3 33.4 -
BZX84C43 YF 43 40.0 46.0 2.0 150 375 0.5 0.1 30.1 37.6 -
BZX84C47 YG 47 44.0 50.0 2.0 170 375 0.5 0.1 32.9 42.0 -
BZX84C51 YH 51 48.0 54.0 2.0 180 400 0.5 0.1 35.7 46.6 -
Notes: 6. Device mounted on FR-4 PC board with recommended pad layout, which can be found on our website at http://www.diodes.com.
7. Valid provided the terminals are kept at ambient temperature.
8. Short duration pulse test used to minimize self-heating effect.
BZX84C2V4 - BZX84C51
Document number: DS18001 Rev. 30 - 2 3 of 5
www.diodes.com May 2012
© Diodes Incorporated
BZX84C2V4 - BZX84C51
400
T , Ambient Temperature, (°C)
Fig. 1 Power Derating Curve
A
P
,
P
O
WE
R
DISSI
P
A
T
I
O
N
(mW)
D
200
100
300
0
500
0100 200
Note 6 Note 7
0
10
20
30
40
50
012345678910
I, ZENE
R
C
U
R
R
EN
T
(mA)
Z
V , ZENER VOLTAGE (V)
Fi g. 2 Typi c al Z en er B r eak down C ha r acter ist ic s
Z
0
10
20
30
0
I, ZENE
R
C
U
R
R
EN
T
(mA)
Z
V , ZENER VOLTAGE (V)
Fig. 3 Typical Zener Breakdown Characteristics
Z
10 20 30 40
T = 25°C
j
Test current I
5mA
Z
Test current I
2mA
Z
C10
C12
C18
C22
C27
C33 C36
C39
C15
0
2
4
6
8
10
10
020 30 40 50 60 70
I, ZE
N
E
R
C
U
R
R
E
N
T
(mA)
Z
V , ZENER VOLTAGE (V)
Fig. 4 Typical Zener Breakdown Characteristics
Z
T = 25°C
J
Test Current I
2mA
Z
C43
C47
C51
C , TOT A L CAP ACIT ANCE (pF)
T
10
100
1,000
10 100
1V , NOMINAL ZENER VOLTAGE (V)
Fig. 5 Typical Total Capacitance vs. Nominal Zener Voltage
Z
T = 25°C
J
V = 1V
R
V = 2V
R
V = 1V
R
V = 2V
R
C , TOTAL CAPACITANCE (pF)
T
1
10
100
100
10 V , NOMINAL ZENER VOLTAGE (V)
Fig. 6 Typical Total Capacitance vs. Nominal Zener Voltage
Z
BZX84C2V4 - BZX84C51
Document number: DS18001 Rev. 30 - 2 4 of 5
www.diodes.com May 2012
© Diodes Incorporated
BZX84C2V4 - BZX84C51
Package Outline Dimensions
Suggested Pad Layout
SOT23
Dim Min Max Typ
A 0.37 0.51 0.40
B 1.20 1.40 1.30
C 2.30 2.50 2.40
D 0.89 1.03 0.915
F 0.45 0.60 0.535
G 1.78 2.05 1.83
H 2.80 3.00 2.90
J 0.013 0.10 0.05
K 0.903 1.10 1.00
K1 - - 0.400
L 0.45 0.61 0.55
M 0.085 0.18 0.11
α 0° 8° -
All Dimensions in mm
Dimensions Value (in mm)
Z 2.9
X 0.8
Y 0.9
C 2.0
E 1.35
X E
Y
C
Z
A
M
JL
D
F
BC
H
K
G
K1
BZX84C2V4 - BZX84C51
Document number: DS18001 Rev. 30 - 2 5 of 5
www.diodes.com May 2012
© Diodes Incorporated
BZX84C2V4 - BZX84C51
IMPORTANT NOTICE
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