2N3996 Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: * High-speed power switching * Power transistor * NPN silicon transistor * Screening and processing per MIL-PRF-19500 Appendix E * JAN level (2N3996J) * JANTX level (2N3996JX) * JANTXV level (2N3996JV) * QCI to the applicable level * 100% die visual inspection per MIL-STD-750 method Features 2072 for JANTXV * * * * * Radiation testing (total dose) upon request Hermetically sealed TO-x metal can Also available in chip configuration Chip geometry 9201 Reference document: MIL-PRF-19500/374 Benefits * Qualification Levels: JAN, JANTX, and JANTXV * Radiation testing available Please contact Semicoa for special configurations www.SEMICOA.com or (714) 979-1900 Absolute Maximum Ratings Parameter Collector-Emitter Voltage TC = 25C unless otherwise specified Symbol VCEO Rating 80 Collector-Base Voltage VCBO 100 Unit Volts Volts Emitter-Base Voltage VEBO 8 Volts IC 5 A 2 11.4 30 300 Collector Current, Continuous Power Dissipation, TA = 25C Derate linearly above 25C Power Dissipation, TC = 25C Derate linearly above 25C Thermal Resistance Operating Junction Temperature Storage Temperature Copyright 2002 Rev. D RJC 3.33 W mW/C W mW/C C/W TJ -65 to +200 C TSTG -65 to +200 C PT PT Semicoa Semiconductors, Inc. 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 www.SEMICOA.com Page 1 of 2 2N3996 Silicon NPN Transistor Data Sheet ELECTRICAL CHARACTERISTICS characteristics specified at TA = 25C Off Characteristics Parameter Symbol Collector-Base Breakdown Voltage V(BR)CBO IC = 10 A 100 Units Volts Collector-Emitter Breakdown Voltage V(BR)CEO IC = 50 mA 80 Volts Collector-Emitter Cutoff Current Collector-Emitter Cutoff Current Emitter-Base Cutoff Current Test Conditions Min Typ Max ICEO VCE = 60 Volts 10 A ICES1 ICES1 IEBO1 IEBO2 VCE = 80 Volts VCE = 80 Volts, TA = 150C VEB = 5 Volts VEB = 8 Volts 200 50 200 10 nA A nA A On Characteristics Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0% Parameter Symbol hFE1 hFE2 hFE3 hFE4 DC Current Gain Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage VBEsat1 VBEsat2 VCEsat1 VCEsat2 Test Conditions IC = 50 mA, VCE = 2 Volts IC = 1 A, VCE = 2 Volts IC = 5 A, VCE = 5 Volts IC = 1 A, VCE = 2 Volts TA = -55C IC = 1 A, IB = 100 mA IC = 5 A, IB = 500 mA IC = 1 A, IB = 100 mA IC = 5 A, IB = 500 mA Min 30 40 15 10 Test Conditions VCE = 5 Volts, IC = 1 A, f = 10 MHz VCB = 10 Volts, IE = 0 mA, 100 kHZ < f < 1 MHz Min Typ Max Units 120 0.6 1.2 1.6 0.25 2 Volts Volts Dynamic Characteristics Parameter Magnitude - Common Emitter, Short Circuit Forward Current Transfer Ratio Open Circuit Output Capacitance Symbol |hFE| COBO Typ 3 Max Units 12 150 pF Max Switching Characteristics Parameter Delay Time td 100 Units ns Rise Time tr 240 ns Storage Time ts 1.4 s Fall Time tf 300 ns Saturated Turn-On Time tON 300 ns Saturated Turn-Off Time tOFF 1.5 s Copyright 2002 Rev. D Symbol Test Conditions Min Typ Semicoa Semiconductors, Inc. 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 www.SEMICOA.com Page 2 of 2