- | n-channel JFETs 5 | Siliconix | VWI e _ | wn designed for... Performance Curves NRL | See Section 5 ; oO fi Pd = General Purpose Amplifiers BENEFITS S Low Noise wn @ Low Output Conductance yg wi or * ABSOLUTE MAXIMUM RATINGS (at 25C) rote] Gate-Drain or Gate-Source Voltage (Note 1} ........ -30 V TO-72 Gate Current ...... Lecce ee eneeeeeseesereaes 10MA See Section 7 Total Device Dissipation (25C Free Air Temperature)............ .... 300 mW Power Derating (to +175C) ........0.00- 02 20 MW/PC Storage Temperature Range............ .. -65 to +200C D Operating Temperature Range............ -65 to +175C e Lead Temperature 6 c (1/16 from case for 10 seconds) ............. 240C s D s *ELECTRICAL CHARACTERISTICS (25C unless otherwise noted) 2N5556 2N5557 2N5558 ; Characteristic : Unit Test Conditions Min | Max | Min | Max | Min | Max ! 1 Gate R Current 0 00 ory na Vps=0V | ate Reverse Curren n. =e = 2s GSS ~100 ~100 -100 Vos = -18 V. Vps T= 160C 3] A] Ves(oft) Gate-Source Cutoff Voltage -0.2} -4.0{ -0.8) 5.0 ) -1.5] -6.0 y Vos =15V,!p=tnd T 41 41 8VGss Gate-Source Breakdown Voltage -30 -30 -30 ig =-10 HA, Vpg=0V ce 5 toss Saturation Drain Current (Note 2) 0.5 2.5 2.0] 5.0 40] 100] mA} Vpg=18V,VGgs=0V 6| | ot Gommon-Source Forward 1500 | 6500 | 15006500 | 1500 | 6500 nl -umho| f=1kHz Common-Source Output 7 D Sos Conductance 20 20 20 Y Common-Source Reverse Transfer = Vps = 15 V, Vg = OV 3] N Crss Capacitance 3 3 3 oF DS GS fe 1 Mee 9 M Cis Common-Source Input Capacitance 6 6 6 io}c]_ Common-Source Equivalent Short 35 35 35 | ov f= 10 Hz W fn Circuit Input Noise Voltage 20 20 20 Wiz f = 100 Hz 12 1 i 1 = = f= 10Hz NF Noise Figure dB Vps=15V,Vaes=OV, 13 1 1 1 BW = 1.0 Hz f = 100 Hz oo * 7 aus JEDEC registered data NRL = NOTES: 0 1. Geometry is symmetrical. Units may be operated with source and drain leads interchanged. 0 2. Pulse test duration < 2 ms. 5 =. x 1979 Siliconix incorporated 3-39