To learn more about ON Semiconductor, please visit our website at
www.onsemi.com
Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers
will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor
product management systems do not have the ability to manage part nomenclature that utilizes an underscore
(_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain
device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated
device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please
email any questions regarding the system integration to Fairchild_questions@onsemi.com.
Is Now Part of
ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number
of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right
to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON
Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out
of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor
is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
©2008 Fairchild Semiconductor Corporation 1www.fairchildsemi.com
FGA20N120FTD Rev. C1
FGA20N120FTD — 1200 V, 20 A Field Stop Trench IGBT
November 2013
Absolute Maximum Ratings
Notes:
1: Repetitive rating, Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol Description Ratings Unit
VCES Collector to Emitter Voltage 1200 V
VGES Gate to Emitter Voltage 25 V
ICContinuous Collector Current @ TC = 25oC40 A
Continuous Collector Current @ TC = 100oC20 A
ICM (1) Pulsed Collector Current 60 A
IFDiode Continuous Forward Current @ TC = 25oC 20 A
Diode Continuous Forward Current @ TC = 100oC10 A
PDMaximum Power Dissipation @ TC = 25oC 298 W
Maximum Power Dissipation @ TC = 100oC119 W
TJ Operating Junction Temperature -55 to +150 oC
Tstg Storage Temperature Range -55 to +150 oC
TLMaximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds 300 oC
Symbol Parameter Typ. Max. Unit
RJC(IGBT) Thermal Resistance, Junction to Case - 0.42 oC/W
RJC(Diode) Thermal Resistance, Junction to Case - 2.0 oC/W
RJA Thermal Resistance, Junction to Ambient - 40 oC/W
G
E
C
G ECTO-3P
FGA20N120FTD
1200 V, 20 A Field Stop Trench IGBT
Features
• Field Stop Trench Technology
• High Speed Switching
• Low Saturation Voltage: VCE(sat) = 1.6 V @ IC = 20 A
• High Input Impedance
•RoHS Compliant
Applications
• Induction Heating, Microvewave Oven
General Description
Using advanced field stop trench technology, Fairchild’s 1200V
trench IGBTs offer superior conduction and switching perfor-
mances for soft switching applications. The device can oper ate
in parallel configuration with exceptional avalanche ruggedness.
This device is designed for induction heating and microwave
oven.
FGA20N120FTD — 1200 V, 20 A Field Stop Trench IGBT
©2008 Fairchild Semiconductor Corporation 2www.fairchildsemi.com
FGA20N120FTD Rev. C1
Package Marking and Ordering Information
Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted
Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity
FGA20N120FTDTU FGA20N120FTD TO-3P Tube N/A N/A 30
Symbol Parameter Test Conditions Min. Typ. Max. Unit
Off Characteristics
BVCES Collector to Emitter Breakdown Voltage VGE = 0 V, IC = 1 mA 1200 - - V
ICES Collector Cut-Off Current VCE = VCES, VGE = 0 V - - 1 mA
IGES G-E Leakage Current VGE = VGES, VCE = 0 V - - ±250 nA
On Characteristics
VGE(th) G-E Threshold Voltage IC = 20 mA, VCE = VGE 3.5 5.9 7.5 V
VCE(sat) Collector to Emitter Saturation Voltage IC = 20 A, VGE = 15 V
TC = 25oC-1.592 V
IC = 20 A, VGE = 15 V,
TC = 125oC-1.85- V
Dynamic Characteristics
Cies Input Capacitance VCE = 30 V, VGE = 0 V,
f = 1 MHz
- 3080 - pF
Coes Output Capacitance - 95 - pF
Cres Reverse Transfer Capacitance - 60 - pF
Switching Characteristics
td(on) Turn-On Delay Time
VCC = 600 V, IC = 20 A,
RG = 10 , VGE = 15 V,
Resistive Load, TC = 25oC
-30-ns
trRise Time - 79 - ns
td(off) Turn-Off Delay Time - 143 - ns
tfFall Time - 217 320 ns
Eon Turn-On Switching Loss - 0.42 - mJ
Eoff Turn-Off Switching Loss - 0.71 1.05 mJ
Ets Total Switching Loss - 1.13 - mJ
td(on) Turn-On Delay Time
VCC = 600 V, IC = 20 A,
RG = 10 , VGE = 15 V,
Resistive Load, TC = 125oC
-29-ns
trRise Time - 93 - ns
td(off) Turn-Off Delay Time - 147 - ns
tfFall Time - 259 - ns
Eon Turn-On Switching Loss - 0.47 - mJ
Eoff Turn-Off Switching Loss - 0.86 - mJ
Ets Total Switching Loss - 1.33 - mJ
QgTotal Gate Charge VCE = 600 V, IC = 20 A,
VGE = 15 V
- 137 - nC
Qge Gate to Emitter Charge - 23 - nC
Qgc Gate to Collector Charge - 65 - nC
FGA20N120FTD — 1200 V, 20 A Field Stop Trench IGBT
©2008 Fairchild Semiconductor Corporation 3www.fairchildsemi.com
FGA20N120FTD Rev. C1
Electrical Characteristics of the Diode TC = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min. Typ. Max Unit
VFM Diode Forward Voltage IF = 20 A TC = 25oC- 1.31.7 V
TC = 125oC- 1.3 -
trr Diode Reverse Recovery Time
IF =20 A,
diF/dt = 200 A/s
TC = 25oC - 447 - ns
TC = 125oC - 485 -
Irr Diode Peak Reverse Recovery Current TC = 25oC- 48 - A
TC = 125oC- 50 -
Qrr Diode Reverse Recovery Charge TC = 25oC - 10.8 - C
TC = 125oC- 12 -
FGA20N120FTD — 1200 V, 20 A Field Stop Trench IGBT
©2008 Fairchild Semiconductor Corporation 4www.fairchildsemi.com
FGA20N120FTD Rev. C1
Typical Performance Characteristics
Figure 1. Typical Output Characteristics Figure 2. Typical Output Characteristics
Figure 3. Typical Saturation Voltage Figure 4. Transfer Characteristics
Characteristics
Figure 5. Saturation Voltage vs. Case Figure 6. Saturation Voltage vs. VGE
Temperature at Variant Current Level
0.0 1.5 3.0 4.5 6.0 7.5 9.0
0
30
60
90
120
150
180
8V 7V
9V
17V
20V
TC = 25oC
15V
12V
10V
VGE = 6V
Collector Current , IC [A]
Collector-Emitter Voltage, VCE [V]
0.0 1.5 3.0 4.5 6.0 7.5 9.0
0
30
60
90
120
150
180
17V
7V 10V
9V
8V
20V
TC = 125oC
15V
12V
VGE = 6V
Collector Current, IC [A]
Collector-Emitter Voltage, VCE [V]
0123456
0
20
40
60
80
100
120
Comm on E m itter
VGE = 15V
TC = 25oC
TC = 125oC
Collector Current, IC [A]
Collector-Emitter Voltage, VCE [V]
3691215
0
20
40
60
80
100
120 Common Emitter
VCE = 20V
TC = 25oC
TC = 125oC
Collector Current, IC [A]
Gate-Emitter Voltage,VGE [V]
25 50 75 100 125
1.2
1.6
2.0
2.4
2.
8
40A
20A
IC = 10A
Com m on E mitter
VGE = 15V
Collector-Emitter Voltage, VCE [V]
Case Temperature, TC [oC]
0 4 8 12 16 20
0
4
8
12
16
20
IC = 10A
20A 40A
Comm on E m itter
TC = 25oC
Collector-Emitter Voltage, VCE [V]
Gate -E m itte r Vo ltag e , V GE [V]
FGA20N120FTD — 1200 V, 20 A Field Stop Trench IGBT
©2008 Fairchild Semiconductor Corporation 5www.fairchildsemi.com
FGA20N120FTD Rev. C1
Typical Performance Characteristics
Figure 7. Saturatio n Voltage vs. VGE Figure 8. Capacitance Characteristics
Figure 9. Gate charge Characteristics Figure 10. SOA Characteristics
Figure 11. Turn-on Characteristics vs. Figure 12. Turn-off Characteristics vs.
0 4 8 12 16 20
0
4
8
12
16
20
IC = 10A
20A 40A
Comm on E m itter
TC = 125oC
Collector-Emitter Voltage, V CE [V]
Gate-Emitter Voltage, VGE [V]
110
0
1000
2000
3000
4000
5000 Comm on E mitter
VGE = 0 V , f = 1MH z
TC = 25oC
Cres
Coes
Cies
Capacitance [pF]
Collector-Emitter Voltage, VCE [V] 30
0 306090120150
0
3
6
9
12
15 Comm on Em itter
TC = 25oC
600V
400V
VCC = 200V
Gate-Emitter Voltage, VGE [V]
Ga te Charg e , Q g [nC]
1 10 100 1000
0.01
0.1
1
10
100
1ms
10 ms
DC
*Notes:
1. T C = 25oC
2. T J = 150oC
3. Single Pulse
10s
100s
Collector Current, Ic [A]
Collector-Emitter Voltage, VCE [V] 2000
0 20406080100
10
100
Common Emitter
VCC = 600V , VGE = 15V
IC = 20A
TC = 25oC
TC = 125oC
td(on)
tr
Switching Time [ns]
Gate Resistance, RG []
300
0 20406080100
100
1000
2000
70
Common Emitter
VCC = 600V , VGE = 15V
IC = 20A
TC = 25oC
TC = 125oC td(off)
tf
Switching Time [ns]
Gate Resistance, RG []
Gate Resist an c e Gate Resistance
FGA20N120FTD — 1200 V, 20 A Field Stop Trench IGBT
©2008 Fairchild Semiconductor Corporation 6www.fairchildsemi.com
FGA20N120FTD Rev. C1
Typical Performance Characteristics
Figure 13. Turn-on Charac teristics vs. Figure 14. Turn-off Characteristics vs.
Collector Current Collector Current
Figure 15. Switching Loss vs. Gate Resistan ce Figure 16. Switching Loss vs.Collector Current
Figure 17. Turn off Switching SOA Characteristics Figure 18. Forward Characteristics
10 20 30 40 50
10
100
Common Emitter
VGE = 15V, RG = 10
TC = 25oC
TC = 125oC
tr
td(on)
Switching Time [ns]
Collector Current, IC [A]
500
10 20 30 40 50
10
1000
Common Emitter
VGE = 15V, R G = 10
TC = 25oC
TC = 125oC
td(off)
tf
Switching Time [ns]
Colle c to r C urrent, IC [A]
100
0 20406080100
1
0.3
Common Emitter
VCC = 600V, VGE = 15V
IC = 20A
TC = 25oC
TC = 125oC
Eon
Eoff
Switching Loss [mJ]
Gate Resistance, RG []
4
10 20 30 40 50
0.1
1
10 Common Emitter
VGE = 15V, RG = 10
TC = 25oC
TC = 125oC
Eon
Eoff
Switching Loss [mJ]
Collector Current, IC [A]
0.0 0.5 1.0 1.5 2.0
0.1
1
10
TJ = 25oC
30
TC = 125oC
TC = 25oC
TJ = 125oC
Forward Voltage, VF [V]
Forward Current, IF [A]
1 10 100 1000
1
10
Safe O pe rating Area
VGE = 15V, TC = 125oC
Collector Current, IC [A]
Collector-Emitter Voltage, VCE [V] 2000
80
FGA20N120FTD — 1200 V, 20 A Field Stop Trench IGBT
©2008 Fairchild Semiconductor Corporation 7www.fairchildsemi.com
FGA20N120FTD Rev. C1
Typical Performance Characteristics
Figure 19. Reverse Recovery Current Figure 20. Stored Charge
Figure 21.Reverse Recovery Time
Figure 22.Transient Thermal Impedance of IGBT
5 10152025
0
10
20
30
40
50
6
0
TC = 25oC
200A/s
diF/dt = 100A /s
Reverse Recovery Currnet, Irr [A]
F o rw ard C u rre n t, I
F
[A]
5 10152025
0
3000
6000
9000
12000
15000
TC = 25oC
200A/s
diF/dt = 100A /s
Stored Reco very Char ge, Q
rr
[nC]
Forward Current, I
F
[
A
]
5 10152025
0
200
400
600
800
100
0
TC = 25oC
200A/s
diF/dt = 100A/s
Rever se Recover y Time, trr [ns]
Fo rw ard C u rren t, I
F
[
A
]
1E-5 1E-4 1E-3 0.01 0.1 1 10
1E-3
0.01
0.1
1
0.01
0.02
0.1
0.05
0.2
single pulse
Thermal Response [Zthjc]
Rectangular Pulse Duration [sec]
Duty Factor, D = t1/t2
Peak Tj = Pdm x Zthjc + TC
0.5
t1
PDM
t2
FGA20N120FTD — 1200 V, 20 A Field Stop Trench IGBT
©2008 Fairchild Semiconductor Corporation 8www.fairchildsemi.com
FGA20N120FTD Rev. C1
Mechanical Dimensions
Figure 23. TO -3P 3L - 3LD, T03, PLASTIC, EIAJ SC-65
Package drawings are provided as a service to customers consider ing Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the draw ing and contact a Fairchild Semicond uctor r epresentative to ver ify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif-
ically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT3P0-003
FGA20N120FTD — 1200 V, 20 A Field Stop Trench IGBT
©2008 Fairchild Semiconductor Corporation 9www.fairchildsemi.com
FGA20N120FTD Rev. C1
TRADEMARKS
The following includes re gistered and unregistere d trademarks and service marks, owned by Fairchild S emiconductor and/or its global subsidiar ies, and is not
intended to be an exhaustive list of all such trademarks.
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY
PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY
THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SY STEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used here in:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the bo dy or (b ) support or sustain life,
and (c) whose fail ure to perform when properly used in accordan ce with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
2. A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
AccuPower™
AX-CAP®*
BitSiC™
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT™
CTL™
Current Transfer Logic™
DEUXPEED®
Dual Cool™
EcoSPARK®
EfficentMax™
ESBC™
Fairchild®
Fairchild Semiconductor®
FACT Quiet Series™
FACT®
FAST®
FastvCore™
FETBench™
FPS™
F-PFS™
FRFET®
Global Power ResourceSM
GreenBridge™
Green FPS™
Green FPS™ e-Series™
Gmax™
GTO™
IntelliMAX™
ISOPLANAR™
Marking Small Speaker s Sound L ouder
and Better™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
MicroPak2™
MillerDrive™
MotionMax™
mWSaver®
OptoHiT™
OPTOLOGIC®
OPTOPLANAR®
PowerTrench®
PowerXS™
Programmable Active Droop™
QFET®
QS™
Quiet Series™
RapidConfigure™
Saving our world, 1mW/W/kW at a time™
SignalWise™
SmartMax™
SMART START™
Solutions for Your Success™
SPM®
STEALTH™
SuperFET®
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SupreMOS®
SyncFET™
Sync-Lock™
®*
TinyBoost®
TinyBuck®
TinyCalc™
TinyLogic®
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
TranSiC™
TriFault Detect™
TRUECURRENT®*
SerDes™
UHC®
Ultra FRFET™
UniFET™
VCX™
VisualMax™
VoltagePlus™
XS™
®
™
Datasheet Identifi cation Product Status Definition
Advance Information Formative / In Design Datasheet contains the design specifica tions for product development. Specifications
may change in any manner without notice.
Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconduct or reserves the right to make changes at any time without
notice to improve design.
No Identification Needed Full Production Datasheet contains final specification s. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
ANTI-COUNTERFEITING POLICY
Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website,
www.Fairchildsemi.com, under Sales Support .
Counterfeiting of se miconductor parts is a growing problem in th e industry. All ma nufactures of semiconductor p roducts are exper iencing counterfeiting of their
parts. Customers who inadver tently purcha se counterfeit part s exper ience many problems su ch as loss of brand repu tation , substa ndard perfo rmance, faile d
application, and increased cost of producti on and manuf act uring dela ys. Fairchil d is taking st rong measures to pro tect ourselves and our custo mers from the
proliferation of cou nterfeit parts. Fairchild str ongly encourages cust omers to purchase Fairchild parts either d irectly fr om Fairchild or from Authorized Fairchi ld
Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild
Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of
up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and
warranty issues that may arise. Fairchild will not provide any warranty covera ge or other assistance for parts bought from Unau thorized Sources. Fairchild is
committed to combat this global prob lem and encourage our customers to do their part in stop ping this practice by buying direct or from authorized distribut ors.
Rev. I66
®
www.onsemi.com
1
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
www.onsemi.com
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
© Semiconductor Components Industries, LLC
