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TMMDB3
®
March 2001 - Ed: 3A
DIAC
MINIMELF
■VBO : 32V
■Breakover voltage range: 28 to 36V
FEATURES
Functioningasatriggerdiodewithafixedvoltage
reference, the TMMDB3 can be used in conjunc-
tion with triacs for simplified gate control circuits
or as a starting element in fluorescent lamp bal-
lasts.
DESCRIPTION
Symbol Parameter Value Unit
ITRM Repetitive peak on-state current
tp=20µs F= 120 Hz 2A
Tstg
Tj Storage temperature range
Operating junction temperature range -40to+125 °C
ABSOLUTE MAXIMUM RATINGS (limiting values)
TMMDB3
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Symbol Parameter Test Conditions Value Unit
VBO Breakover voltage * C = 22nF ** MIN. 28 V
TYP. 32
MAX. 36
IV
BO1 -V
BO2 I Breakover voltage
symmetry C = 22nF ** MAX. ± 3 V
∆V Dynamic breakover
voltage * VBO and VFat
10mA MIN. 5 V
VOOutput voltage * see diagram 2
(R=20Ω)MIN. 5 V
IBO Breakover current * C = 22nF ** MAX. 50 µA
tr Rise time * see diagram 3 MAX. 2 µs
IRLeakage current * VR= 0.5 VBO max MAX. 10 µA
* Applicable to both forward and reverse directions.
** Connected in parallel to the device.
ELECTRICAL CHARACTERISTICS (Tj = 25°C unless otherwise specified)
TMM DB 3
Breakover voltage
3:V typ = 32V
BO
Diac Series
MINIMELF
ORDERING INFORMATION
Part Number Marking Weight Base Quantity Packing Mode
TMMDB3 (None) 0.04 g 2500 Tape & Reel
OTHER INFORMATION
TMMDB3
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10mA
IBO
IR
-V +V
+I
F
-I
F
0,5 VBO
VBO
V
VF
Diagram 1: Voltage - current characteristic curve.
D.U.T
Vo
C=0.1µF
220V
50 Hz
500 kΩ10 kΩ
R=20 Ω
IP
Rs=0
T410
Diagram 2: Test circuit.
90 % l
p
10 % t
r
Diagram 3: Rise time measurement.
25 50 75 100 125
1.08
1.06
1.04
1.02
1.00
VBO [Tj]
VBO [Tj = 25°C]
Tj (°C)
Fig. 1: Relative variation of VBO versus junction
temperature (typical values)
1 10 100
0.1
1.0
10.0
20.0
tp(µs)
ITRM(A)
F=120Hz
Tj initial=25°C
Fig. 2: Repetitive peak pulse current versus pulse
duration (maximum values).
TMMDB3
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PACKAGE MECHANICAL DATA (in millimeters)
MINIMELF
REF. DIMENSIONS
Millimeters Inches
Min. Typ. Max. Min. Typ. Max.
A 3.30 3.40 3.6 0.130 0.134 0.142
B 1.59 1.60 1.62 0.063 0.063 0.064
C 0.40 0.45 0.50 0.016 0.018 0.020
D 1.50 0.059
B
O
/
A
C
C
D
O
/
0.05 E-F
O
/
F
E
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useof such information nor forany infringementof patents orother rightsof third partieswhich mayresult from its use. Nolicense is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap-
proval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics
© 2001 STMicroelectronics - Printed in Italy - All rights reserved.
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2.5
5
2
FOOTPRINT
10 20 50 100 200 500
0
5
10
15
20
25
30
35
40
C(nF)
tp(µs)
Tj=25°C
0Ω
10Ω
22Ω
68Ω
47Ω
33Ω
Fig. 3: Time duration while current pulse is higher
50mA versus C and Rs (typical values).
