GBPC35005/W-GBPC3510/W VISHAY Vishay Lite-On Power Semiconductor 35A Glass Passivated Bridge Rectifier Features Glass passivated die construction Diffused junction Low reverse leakage current Low power loss, high efficiency Surge overload rating to 400A peak Electrically isolated metal base for maximum heat dissipation Case to terminal isolation voltage 2500V UL listed under recognized component index , file number E95060 Absolute Maximum Ratings Tj = 25C Repetitive peak reverse voltage GBPC35005/W | Varm 50 Vv =Working peak reverse voltage GBPC3501/W | =Vawm 100 Vv =DC Blocking voltage GBPC3501/W =VpR 200 V GBPC3501/W 400 Vv GBPC3501/W 600 Vv GBPC3501/W 800 Vv GBPC3501/W 1000 Vv Peak forward surge current lesm 400 A Average forward current Tce=50C lEAy 35 A Junction and storage temperature range T=Tstg | -65...4150 | C Electrical Characteristics T, = 25C Forward voltag Ir=17.5A Reverse current Tce=25C To=1 25C IR 500 uA I@t Rating for fusing 4 660 | As Diode capacitance VR=4V, f=1MHz Cp 300 pF Thermal resistance junction to case _| mounted on heatsink Rthuc 3.0 KAW Rev. A2, 24-Jun-98 1 (4)GBPC35005/WGBPC3510/W Vishay Lite-On Power Semiconductor Characteristics (Tj = 25C unless otherwise specified) _ 4 Cha 1000 x 220 x 220 x 50 mm ~ AL plate heatsink Ww o a = 30 D 8 2 P x g 3 5 20 % 100 ie Oo oO 3 a z 10 I a 2 Oo _ Resistive or inductive load 0 10 0 2 50 75 100 125 150 0.1 1.0 10 100 15680 Tamb Ambient Temperature (C ) 15683 Vr Reverse Voltage ( V ) Figure 1. Max. Average Forward Current vs. Figure 4. Typ. Diode Capacitance vs. Reverse Voltage Ambient Temperature 100 100 EET = 125C < g yr 10 =~ 10 o o a a 50V 400V > 10 > 1.0 bw 800v = 1000v @ a = $ P ce I au Ol - 0.1 Tj = 25C IF Pulse Width = 300 ps 0.01 0.01 0 0.2 04 06 08 1.0 12 14 16 18 0 20 40 60 80 100 120 140 15681 Ve Forward Voltage ( V ) 15684 Percent of Rated Peak Reverse Voltage (%) Figure 2. Typ. Forward Current vs. Forward Voltage Figure 5. Typ. Reverse Current vs. Percent of Rated Peak Reverse Voltage <q 400 T= 150C e Single Half Sine-Wave 2 (JEDEC Method) 8 300 1) 2 a RB 200 oO = o Ww s s 100 a I fe - oO 1 10 100 15682 Number of Cycles at 60 Hz Figure 3. Max. Peak Forward Surge Current vs. Number of Cycles 2 (4) Rev. A2, 24-Jun-98- GBPC35005/W-GBPC3510/W VISHAY Vishay Lite-On Power Semiconductor Dimensions in mm A C H GBPC (AC) GBPC/GBPC-W | Jim Min Max = of Wf A | 2830 | 28.80 B 7.40 8.00 ()) (AC) c|_16.10 17.10 Q E 18.80 21.30 H G 13.90 14.80 H | Hole for#10 screw = Cor 05.08 05.59 Li LY 04 | tol J 11.60 18.60 ' a a K 10.90 11.90 L 60.9] 01.0] M 31.80 - A NP 7.40 5.00 P H P 17.60 18.60 ALL Dimensions in. mm GBPC-W a (AC)} + (+) ; os S| =< W" Suffix Designates Wire Leads , . No Suffix Designates Faston Terminals (-) (AC) { & | technical drawings according to DIN - specifications 14477 Case: molded plastic with heatsink internally mounted in the bridge encapsulation Polarity: as marked on case Approx. weight: GBPC 18 grams, GBPC-W 14.5 grams Mounting: through hole for #10 screw Mounting torque: 8.0 Inch-pounds maximum Mounting position: any Marking: type number Rev. A2, 24-Jun-98 3 (4)GBPC35005/W-GBPC3510/W Vishay Lite-On Power Semiconductor VEISHAY Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. Itis particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the nextten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. AnnexA, Bandlist oftransitional substances ofthe Montreal Protocol andthe London Amendments respectively 2. Class | and Il ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 4 (4) Rev. A2, 24-Jun-98