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FDBL0260N100 N-Channel PowerTrench(R) MOSFET www.onsemi.com FDBL0260N100 N-Channel PowerTrench(R) MOSFET 100 V, 200 A, 2.6 m Max RDS(on) = 2.6 m at VGS = 10 V, ID = 80 A Applications Max Qg(tot) = 116 nC at VGS = 10 V, ID = 80 A Industrial Motor Drive UIS Capability Industrial Power Supply RoHS Compliant Industrial Automation Battery Operated tools Battery Protection Solar Inverters UPS and Energy Inverters Energy Storage Load Switch D D S SS S S G SS TOP G S BOTTOM MO-299A MOSFET Maximum Ratings TC = 25 C unless otherwise noted. Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage Drain Current -Continuous ID -Continuous TJ, TSTG 20 V (Note 5) TC = 100C (Note 5) 140 (Note 4) 1000 Single Pulse Avalanche Energy PD Units V TC = 25C -Pulsed EAS Ratings 100 (Note 3) Power Dissipation TC = 25C Power Dissipation TA = 25C 200 866 250 (Note 1a) Operating and Storage Junction Temperature Range 3.5 -55 to +175 A mJ W C Thermal Characteristics RJC Thermal Resistance, Junction to Case RJA Thermal Resistance, Junction to Ambient (Note 1) 0.6 (Note 1a) 43 C/W Package Marking and Ordering Information Device Marking FDBL0260N100 Device FDBL0260N100 Package MO-299A Semiconductor Components Industries, LLC, 2016 December, 2016, Rev. 1.1 Reel Size - Tape Width - Quantity - Publication Order Number: FDBL0260N100/D 1 Symbol Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BVDSS BVDSS TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250 A, VGS = 0 V 100 ID = 250 A, referenced to 25 C V 53 VDS = 80 V, VGS = 0 V VGS = 20 V, VDS = 0 V mV/C 1 100 A nA 4 2.6 V m On Characteristics VGS(th) rDS(on) VGS(th) TJ gFS Gate to Source Threshold Voltage Static Drain to Source On Resistance Gate to Source Threshold Voltage Temperature Coefficient Forward Transconductance VGS = VDS, ID = 250 A VGS = 10 V, ID = 80 A 2 2.7 2.1 ID = 250 A, referenced to 25 C -13 mV/C VDS = 10 V, ID = 80 A 170 S Dynamic Characteristics Ciss Coss Crss Rg Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance VDS = 50 V, VGS = 0 V, f = 1 MHz VGS = 0.5V, f = 1MHz 6175 1330 40 2.6 9265 1995 60 pF pF pF 26 34 47 19 83 11 28 16 42 54 75 34 116 16 ns ns ns ns nC nC nC nC 0.8 0.8 71 121 200 1000 1.3 1.2 113 194 A A Switching Characteristics td(on) tr td(off) tf Qg(TOT) Qg(th) Qgs Qgd Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Threshold Gate Charge Gate to Source Gate Charge Gate to Drain "Miller" Charge VDD = 50 V, ID = 80 A, VGS = 10 V, RGEN = 6 VGS = 0 to 10 V VGS = 0 to 2 V VDD = 50 V, ID = 80 A Drain-Source Diode Characteristics IS ISM VSD trr Qrr Maximum Continuous Drain to Source Diode Forward Current Maximum Pulsed Drain to Source Diode Forward Current (Note 2) VGS = 0 V, IS = 80 A Source to Drain Diode Forward Voltage VGS = 0 V, IS = 40 A (Note 2) Reverse Recovery Time IF = 80 A, di/dt = 100 A/s Reverse Recovery Charge - V ns nC Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. a) 43 C/W when mounted on a 1 in2 pad of 2 oz copper. 2. Pulse Test: Pulse Width < 300 s, Duty cycle < 2.0 %. 3. EAS of 866 mJ is based on starting TJ = 25 C, L = 0.3 mH, IAS = 76 A, VDD = 90 V, VGS = 10 V. 100% test at L = 0.1 mH, IAS = 110 A. 4. Pulsed Id please refer to Figure "Forward Bias Safe Operating Area" for more details. 5. Computed continuous current limited to Max Junction Temperature only, actual continuous current will be limited by thermal & electro-mechanical application board design. www.onsemi.com 2 FDBL0260N100 N-Channel PowerTrench(R) MOSFET Electrical Characteristics TJ = 25 C unless otherwise noted. VGS = 10 V 3 VGS = 8 V NORMALIZED DRAIN TO SOURCE ON-RESISTANCE ID, DRAIN CURRENT (A) 300 VGS = 7 V 200 VGS = 6.5 V VGS = 6 V 100 PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 0 0.0 0.5 1.0 1.5 2.0 VGS = 6 V 2 VGS = 6.5 V 1 0 2.5 0 100 rDS(on), DRAIN TO 2.0 1.8 1.6 1.4 1.2 1.0 0.8 SOURCE ON-RESISTANCE (m) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 20 ID = 80 A VGS = 10 V 0.6 -75 -50 -25 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE (oC) IS, REVERSE DRAIN CURRENT (A) ID, DRAIN CURRENT (A) VDS = 5 V 150 TJ = 175 oC TJ = 25 oC TJ = -55 oC 2 3 4 5 6 ID = 80 A 10 TJ = 150 oC 5 TJ = 25 oC 4 5 6 7 8 9 10 Figure 4. On-Resistance vs. Gate to Source Voltage 200 0 15 VGS, GATE TO SOURCE VOLTAGE (V) PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 50 PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 0 Figure 3. Normalized On Resistance vs. Junction Temperature 100 300 Figure 2. Normalized On-Resistance vs. Drain Current and Gate Voltage 2.4 250 200 ID, DRAIN CURRENT (A) Figure 1. On Region Characteristics 300 VGS = 10 V PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX VDS, DRAIN TO SOURCE VOLTAGE (V) 2.2 VGS = 8 V VGS = 7 V 300 100 VGS = 0 V 10 TJ = 175 oC 1 TJ = 25 oC 0.1 0.01 TJ = -55 oC 0.001 0.0 7 0.2 0.4 0.6 0.8 1.0 VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs. Source Current www.onsemi.com 3 1.2 FDBL0260N100 N-Channel PowerTrench(R) MOSFET Typical Characteristics TJ = 25 C unless otherwise noted. VGS, GATE TO SOURCE VOLTAGE (V) 10 10000 ID = 80 A Ciss VDD = 25 V 8 6 CAPACITANCE (pF) VDD = 50 V VDD = 75 V 4 1000 Coss 100 2 0 f = 1 MHz VGS = 0 V 0 20 40 60 80 10 0.1 100 1 10 100 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs. Drain to Source Voltage 1000 2000 1000 ID, DRAIN CURRENT (A) IAS, AVALANCHE CURRENT (A) Crss 100 TJ = 25 oC 10 TJ = 150 oC 1 0.001 0.01 0.1 1 10 100 10 s 100 50 s THIS AREA IS LIMITED BY rDS(on) 100 s SINGLE PULSE TJ = MAX RATED 1 ms 10 RJC = 0.6 oC/W 1 TC = 25 oC 0.1 0.1 1000 10000 tAV, TIME IN AVALANCHE (ms) 10 ms 100 ms/DC CURVE BENT TO MEASURED DATA 1 10 100 1000 VDS, DRAIN to SOURCE VOLTAGE (V) Figure 10. Forward Bias Safe Operating Area Figure 9. Unclamped Inductive Switching Capability 100000 P(PK), PEAK TRANSIENT POWER (W) SINGLE PULSE o RJC = 0.6 C/W o TC = 25 C 10000 1000 100 10 -5 10 -4 10 -3 -2 10 10 t, PULSE WIDTH (sec) Figure 11. Single Pulse Maximum Power Dissipation www.onsemi.com 4 -1 10 1 FDBL0260N100 N-Channel PowerTrench(R) MOSFET Typical Characteristics TJ = 25 C unless otherwise noted. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 2 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 0.01 0.001 -5 10 NOTES: ZJC(t) = r(t) x RJC RJC = 0.6 oC/W Peak TJ = PDM x ZJC(t) + TC Duty Cycle, D = t1 / t2 SINGLE PULSE -4 10 -3 -2 10 10 Figure 12. Junction-to-Case Transient Thermal Response Curve www.onsemi.com 5 -1 10 t, RECTANGULAR PULSE DURATION (sec) 1 FDBL0260N100 N-Channel PowerTrench(R) MOSFET Typical Characteristics TJ = 25 C unless otherwise noted. 9.70 9.90 DETAIL "A" 0.60 0.80 B 0.40 0.60 (0.40) 11.58 11.78 10 (3.30) (2X) 0.50 0.70 1 0.60 0.80 10.28 10.48 0.20 C A B DETAIL "A" 8 0.60 0.70 0.90 1.20 (0.35) (8X) 0.25 0.20 7X C A B C 8.40 10.20 TOP VIEW 5.10 4.45 DETAIL "B" 6.64 0.20 C 0.40 0.60 2.20 2.40 2.95 8.10 4.99 2.04 0.10 C 2.90 1.46 C 6.64 SIDE VIEW 0.86 13.28 0.60 2.80 1 A 9.80 10.00 0.20 C A B 0.80 8 1.20 LAND PATTERN RECOMMENDATION (8.00) 1.90 2.10 5.19 4.73 0.10 (2X) (7.15) 6.55 6.75 2.60 (2X) 3.30 (2X) 5.89 1.20 3X 3.75 0.65 2X 7.40 7.60 (8.30) BOTTOM VIEW 10 (0.35) DETAIL "B" NOTES: UNLESS OTHERWISE SPECIFIED A) PACKAGE STANDARD REFERENCE: JEDEC MO-299, ISSUE A, DATED NOVEMBER 2009. B) ALL DIMENSIONS ARE IN MILLIMETERS. C) DIMENSIONS DO NOT INCLUDE BURRS OR MOLD FLASH. MOLD FLASH OR BURRS DOES NOT EXCEED 0.10MM. D) DIMENSIONING AND TOLERANCING PER ASME Y14.5M-1994. E) DRAWING FILE NAME: MKT-PSOF08AREV3 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. 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