General Description Features Repetitive Reverse Voltage : VRRM= 600V Low Forward Voltage : VF(typ.) = 1.55V Average Forward Current : IF(Av.)=300A @TC=100 Ultra-Fast Reverse Recovery Time : trr(typ.) =50ns Extensive Characterization of Recovery Parameters Reduced EMI and RFI Isolation Type Package 600V FRD Module Ultra-FRD module devices are optimized to reduce losses and EMI/RFI in high frequency power conditioning electrical systems. These diode modules are ideally suited for power converters, motors drives and other applications where switching losses are significant portion of the total losses. Applications High Speed & High Power converters, Welders Various Switching and Telecommunication Power Supply E301932 2DM-1 Equivalent Circuit Absolute Maximum Ratings @Tc = 25oC Characteristics Conditions Symbol Rating Unit VRRM 600 V VR(DC) 480 V 600 A 300 A IFSM 6000 A I2t 149* 103 A2s Junction Temperature TJ -40 ~ 150 Maximum Power Dissipation PD 890 W Visol 2500 V Tstg -40 ~ 125 - 4.0 N.m - 3.0 N.m - 170 g Repetitive Peak Reverse Voltage Reverse DC Voltage o TC=25 C Average Forward Current Surge(non-repetitive) Forward I2t for Fusing Isolation Voltage TC=100oC Current Resistive Load One Half Cycle at 60Hz, Peak Value Value for One Cycle Current, tw = 8.3ms, Tj= 25 Start @AC 1 minutes Storage Temperature Mounting Torque Terminal Torque Typical Including Screws Weight Mar. 2013. Version 2.0 1 MPGB1N300U60 MPGB1N300U60 600V FRD Module IF(AV) MagnaChip Semiconductor Ltd. @Tc = 25oC(unless otherwise specified) Characteristics Conditions Cathode Anode Breakdown Voltage IR=100uA Diode Maximum Forward Voltage IF=300A Symbol Min. Typ. Max. Unit VR 600 - - V - 1.55 1.9 - 1.45 - TC=25 VFM Diode Peak ReverseRecovery Current Diode Reverse Recovery Time Diode Reverse Recovery Time Tc=100, VRRM applied IF =1A,VR=30V di/dt = -600A/uS IF =300A,VR=200V di/dt = -600A/uS V TC=100 IRRM - - 1.0 mA TC=25 trr - 50 65 ns - 150 180 - 280 - Symbol Min. Typ. Max. Unit Rth(j-c) - - 0.14 /W TC=25 trr TC=100 ns Thermal Characteristics Characteristics Thermal Resistance(Isolation Type) Conditions Junction to Case v Mar. 2013. Version 2.0 2 MagnaChip Semiconductor Ltd. 600V FRD Module TC=100 MPGB1N300U60 Electrical Characteristics TC=25 TC=125 Reverse Recovery Time[ns] 180 300 250 200 150 100 50 150 120 90 60 30 0 0.0 0.5 1.0 1.5 0 2.0 100 200 Forward Voltage Drop,VF[V] Fig.1 Typical Forward Voltage Drop vs. Instantaneous Forward Current 400 500 600 Fig.2 Typical Reverse Recovery Time Vs. -di/dt 800 Average Forward Current,I F(AVG)[A] 1 Thermal Response Zthjc[ /W] 300 di/dt[A/us] 0.1 0.01 1E-3 1E-4 1E-5 TC=25 1E-4 1E-3 0.01 0.1 1 600 500 DC 400 300 200 100 0 10 0 20 40 60 80 100 120 140 Case Temperatute, Tc[] Rectangular Pulse Duration Time[sec] Fig.3 Transient Thermal Impedance(Zthjc) Characteristics Mar. 2013. Version 2.0 700 Fig.4 Forward Current Derating Curve 3 MagnaChip Semiconductor Ltd. 160 600V FRD Module Forward Current,IF[A] 350 MPGB1N300U60 400 2DM-1 Dimensions are in millimeters, unless otherwise specified MPGB1N300U60 Package Dimension 600V FRD Module Mar. 2013. Version 2.0 4 MagnaChip Semiconductor Ltd. MPGB1N300U60 600V FRD Module DISCLAIMER: The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be expected to result in a personal injury. Seller's customers using or selling Seller's products for use in such applications do so at their own risk and agree to fully defend and indemnify Seller. MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility for use of any circuitry other than circuitry entirely included in a MagnaChip product. is a registered trademark of MagnaChip Semiconductor Ltd. Mar. 2013. Version 2.0 5 MagnaChip Semiconductor Ltd.