Mar
.
201
3. V
ersion 2
.0
MagnaC
hip Semiconducto
r Ltd
.
1
MP
GB1N30
0U
60
60
0V FRD Module
A
bsolute Maximum Ra
tings
@Tc = 25
o
C
Characterist
ics
Conditions
Symbol
Rating
Unit
Repetitive Peak
Reverse Voltag
e
V
RRM
600
V
Reverse DC Vol
tage
V
R(DC)
48
0
V
Average Forw
ard
Curren
t
T
C
=25
o
C
Resistive Load
I
F(AV)
600
A
T
C
=
10
0
o
C
300
A
Surge(non-r
epetitive) Forw
ard
Current
One Half Cy
cle at 60Hz,
Peak Value
I
FSM
6000
A
I
2
t for Fusing
Value for One Cy
cle Curren
t,
t
w
= 8.3ms, T
j
= 25
℃
Start
I
2
t
149
* 10
3
A
2
s
Junction
T
e
mperature
T
J
-40 ~ 150
℃
Maximum Pow
er Dissipation
P
D
890
W
Isolation
Voltage
@AC 1 minutes
V
isol
2500
V
Storage Temper
ature
T
stg
-40 ~ 1
25
℃
Mounting Torqu
e
-
4.0
N.m
Terminal Torque
Typical Including
Screws
-
3.0
N.m
Weight
-
170
g
MP
GB1N30
0U
60
600V FRD Module
General Description
Ultra-FRD module devices ar
e optimized to r
educe losses
and EMI/RFI in high freque
ncy power conditioning
electrical
systems.
These diode modules ar
e ideally suited for po
wer converters,
motors drives and othe
r applications wher
e switching losses
are significant portion of the t
otal losses.
Features
Rep
etitive Reverse V
oltage : V
RRM
=
60
0V
L
ow Forward V
oltage
: V
F
(typ.)
=
1.
55
V
Average Forward Current : I
F
(
Av
.)=
30
0A
@T
C
=100
℃
Ult
ra-Fast Reverse Recovery
T
im
e : t
rr
(typ.) =50ns
E
xtensive Characterization of Recovery Parameters
Red
uced EMI and RFI
Is
olation T
ype Package
A
pplications
Hig
h Speed & High Power converters, Welders
V
ariou
s Switching and T
elecommunication Power Supply
2
DM
-1
Equivalent Circuit
E
301932
Mar
.
201
3. V
ersion 2
.0
MagnaC
hip Semiconducto
r Ltd
.
2
MP
GB1N30
0U
60
60
0V FRD Module
Electrical Characteristics
@Tc = 25
o
C
(unle
ss otherwise
specified)
Characterist
ics
Conditions
Symbol
Min.
Typ.
Max.
Unit
Cathode Anode
Breakdow
n Voltage
I
R
=100uA
V
R
600
-
-
V
Diode Max
imum Forwar
d Voltage
I
F
=3
00
A
T
C
=25
℃
V
FM
-
1.55
1.
9
V
T
C
=100
℃
-
1.
45
-
Diode Peak Rev
erseRecover
y Current
T
c
=100
℃
,
V
RRM
applied
T
C
=100
℃
I
RRM
-
-
1.0
mA
Diode Reve
rse Recovery Ti
me
I
F
=1
A,
V
R
=30V
di/dt = -600A/uS
T
C
=
25
℃
t
rr
-
50
65
ns
Diode Reve
rse Recovery Ti
me
I
F
=300
A,
V
R
=200V
di/dt = -600A/uS
T
C
=25
℃
t
rr
-
150
180
ns
T
C
=100
℃
-
280
-
Thermal Characteristics
Characterist
ics
Conditions
Symbol
Min.
Typ.
Max.
Unit
Thermal Resistan
ce(Isolation Typ
e)
Junction to Case
R
th(j-c)
-
-
0.
14
℃
/W
v
Mar
.
201
3. V
ersion 2
.0
MagnaC
hip Semiconducto
r Ltd
.
3
MP
GB1N30
0U
60
60
0V FRD Module
Fig.1 T
ypical Forward V
oltage Drop
vs. Instantaneous Forw
ard Current
Fig.2 T
ypical Reverse R
ecovery Time
V
s.
–
di/dt
Fig.3 T
ransient T
hermal I
mpedance(Zth
jc)
Characteristics
Fig.4 Forward Cur
rent Derating Cu
rve
0
20
40
60
80
100
120
140
160
0
100
200
300
400
500
600
700
800
DC
Average Forward
Current,I
F(AVG)
[A]
Case Temperatute, Tc[
℃
]
0.0
0.5
1.0
1.5
2.0
0
50
100
150
200
250
300
350
400
Forward Current,I
F
[A]
T
C
=25
℃
T
C
=125
℃
Forward Voltage Drop,V
F
[V]
100
200
300
400
500
600
0
30
60
90
120
150
180
Reverse R
ecovery Time
[ns]
di/dt[A/us]
1E-5
1E-4
1E-3
0.01
0.1
1
10
1E-4
1E-3
0.01
0.1
1
T
C
=25
℃
Thermal Response Zthjc[
℃
/W]
Rectangular Pulse Duration
Time[sec]
Mar
.
201
3. V
ersion 2
.0
MagnaC
hip Semiconducto
r Ltd
.
4
MP
GB1N30
0U
60
60
0V FRD Module
Package Dimension
2
DM
-1
Dimensions are in mil
limeters, un
less otherwise s
pecified
T
BD
T
BD
Mar
.
201
3. V
ersion 2
.0
MagnaC
hip Semiconducto
r Ltd
.
5
MP
GB1N30
0U
60
60
0V FRD Module
DISCLAIMER:
The
Products
are
not
designed
for
use
in
hostile
environments,
including,
without
limitation,
aircraft,
nuclear
power
generation,
medical
appliances,
and
devices
o
r
systems
in
which
m
alfunction
of
any
Product
can
reasonably
be
expected
to
result
in
a
personal
injury.
Sel
ler’s
customers
using
or
selling
Seller’s
products
for
use
in
such
applications do so at their own risk and agree to fully defend and indemnify
Seller.
MagnaC
hip reserves
the
right
to change
the
specifications and circuitry
without notice
at
any t
ime. MagnaChip does
not
consid
er
responsibility
for
use
of
any
circ
uitry
other
tha
n
circuitry
entirely
included
in
a
Ma
gnaChip
product.
is
a
regi
stered
trademark
of
MagnaChip
Semiconductor
Ltd.
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