b> CQew + LINE No. Vv - - #- SYMBOLS & CODES COMMON TO MORE THAN ONE TECH New Type Revised Specifications Non-JEDEC type manufactured outside U'S.A. TYPE No. SYMBOLS & CODES EXPLAINED Switching type, also listed in Section 12 Chopper, also listed in Section 13, Category 10 These types also included elsewhere with other characteristics. See Type No. Cross Index for alternate line number. Radiation Resistant Devices, also listed in Section 13, Category 13. ICAL SECTION wo fa, Gain bandwidth product (f-) Maximum frequency of oscillation Figure of merit (frequency for unity power gain) Minimum Maximum I Charge storage time constant Stored base charge picocoulomb Total switching time Ton = t + ty Typical Value ee Tort = ts + ty Typical Value Ton + Tote =td+ tr + tf + ts LINE No. TYPE No. [2] RISE [DELAY TIME | TIME STRUCTURE (Atl Sections A Alloy Except 6 & 7} AN Annular D Diffused or drift DM - Diffused mesa E Epitaxial EA -~ Epitaxial annular EM Epitaxial mesa F Fused G Grown GA Gallium Arsenide H Hometaxial MA -- Mico alloy MD Micro alloy diffused ME - Mesa MOS Metal oxide silicon PA, Precision alloy PC Point contact PD Precision alloy diffused PE Planar epitaxial PL Planar s Surface barrier to Matched pair ~ Switching, other uses Chopper, other uses Noise figure 8db or below Plastic package ~ Overlay * THESE TYPES ALSO INCLUDED ELSEWHERE WITH OTHER CHARACTERISTICS SEE TYPE NO. CROSS INDEX FOR ADDITIONAL PAGE & LINE NO. Pulsed Minimum Maximum Available to selected range narrower than indicated - Yes in millimho (FETs only). Bias values are Vos & 'b . | Cob SAT. xX Tt - "bp rbb PP +him vw 24 NP Cob |N-NPN i A|TEMP: T OWG. No. ormr moo Ge Germanium Si Siticon Tetrode NPN or N Channel PNP or P Channel Field Effect Transistor Radiation Resistant Device (See above also) D With infinite heat sink Following symbols indicate temperature at which derating starts: f - 40c 70 * ~ 45C $- 100C or greater # 50C @ 80C ~ 60C A- Pulsed A ~- Maximum $ ~ Cob - Ron (FETs only) # Pulsed - Coes (FET's only} SISTORS A Ambient Cc Case J Junction Ss Storage DESCRIPTION a 1 Avalanche Mode 10 - 2 Bi-directional 11 - Unmatched Ge Germanium 3 Field Effect Composite (Dual) Si Silicon 4 Hook Collector 12 Cryogenic 5 ~ Complementary 13 Radiation Symmetry (PNP & Resistant Devices NPN) Matched Pair 14 Pressure Sensitive N -~ NPN or N Channel See TECHNICAL TERM DEFINITIONS Section | 6 Matched Pair 15 Transistor chips P PNP or P Channel 7 Phototransistor 16 Darlington (See above also) 8 - Tetrode 17 Microwave 9 Unijunction: NN-type emitter (P-type Base) PP-type emitter (N-type Base)121 TYPE No. FTI315 TIS48 2N5272 28C423 FT4354 2SA450H FM3014 2N709/51 78EP 2N2368/51 BSws0 PMT123 280613 2N2369/51 2N709A/5 1 BSV50G $T6120 MM2554 2N955A ME8101 2N2379 D.A.T.A. SOOMS8A SOOMTA 500M54 5SOOM5A 500M5A 500M8 500M 530M8 S60MA 600MSA 600M 675M 750M 750M$ 800MA 800M 800M 1000M 1OOOMSA 1500M8 4000Mt DELAY; STORE) FALL TIME | TIME td ts 13n 12nt 14nt 18n 4.5nt |5.0nt TIME tf 18nD 18nD IN FREE AIR 6, 360m 360m 360m 360m 360m 500m 4.0 Veb 1.0 @ 10D 1.0% 1.0 @ 5.0 1 le IN ORDER OF (1) fab, (2) MAX RISE TIME & Cob rbb |STRUCTURE;/M|MAX.;Y200 |E 0 X {P-PNP A|TEMP! s/a AD Cob |N-NPN T 5p 4.0pA Si p 4.0ps SYMBOLS AND CODES EXPLAINED IN INTERPRETER T0200 TO18 7018 u T018 TO92 TO018 u TO039 TO105 |A TO18 AD TO46 TO51 u46 121