IS61FSCS25672 IS61FSCS51236 ISSI SRAM 256K X 72, 512K X 36 ADVANCE INFORMATION JUNE 2002 (R) 18MB SYNCHRONOUS SRAM FEATURES * JEDEC SigmaRam pinout and package standard * Single 1.8V power supply (VCC): 1.7V (min) to 1.9V (max) * Dedicated output supply voltage (VCCQ): 1.8V or 1.5V typical * LVCMOS-compatible I/O interface * Common data I/O pins (DQs) * Single Data Rate (SDR) data transfers * Late Write Flow Through read operations * Burst and non-burst read and write operations, selectable via dedicated control pin (ADV) * Internally controlled Linear Burst address sequencing during burst operations Bottom View * Full read/write coherency 209-Ball, 14 mm x 22 mm BGA 1 mm Ball Pitch, 11 x 19 Ball Array * Byte write capability * Single cycle deselect * Single-ended input clock (CLK) * Selectable output driver impedance via dedicated control pin (ZQ) * Depth expansion capability (2 or 4 banks) via programmable chip enables (E2, E3, EP2, EP3) * JTAG boundary scan (subset of IEEE standard 1149.1) * 209 Ball (11x19), 1mm pitch, 14mm x 22mm Ball Grid Array (BGA) package SIGMARAM FAMILY OVERVIEW The IS61FSCS series SRAMs are built in compliance with the SigmaRAM pinout standard for synchronous SRAMs. The implementations are 18,874,368-bit (18Mb) SRAMs. These are the first in a family of wide, very low voltage CMOS I/O SRAMs designed to operate at the speeds needed to implement economical high performance networking systems. ISSI's SRAMs are offered in a number of configurations that emulate other synchronous SRAMs, such as Burst RAMs, NBT RAMs, Late Write, or Double Data Rate (DDR) SRAMs. The logical differences between the protocols employed by these RAMs hinge mainly on various combinations of address bursting, output data registering and write cueing. SRAMs allow a user to implement the interface protocol best suited to the task at hand. This specific product is Common I/O, SDR, Flow Through and in the family is identified as 1x1Lf. Copyright (c) 2002 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products. Integrated Silicon Solution, Inc. -- www.issi.com -- 1-800-379-4774 ADVANDED INFORMATION Rev. 00A 06/13/02 1 IS61FSCS25672 IS61FSCS51236 ISSI (R) FUNCTIONAL DESCRIPTION Because SigmaRAM is a synchronous device, address, data Inputs, and read/write control inputs are captured on the rising edge of the input clock. Write cycles are internally self-timed and initiated by the rising edge of the clock input. This feature eliminates complex off-chip write pulse generation required by asynchronous SRAMs and simplifies input signal timing. IS61FSCS series SRAMs are implemented with ISSI's high performance CMOS technology and are packaged in a 209-Ball BGA. IS61NSCS25672 PINOUT 256K x 72 COMMON I/O--TOP VIEW 2 1 2 3 4 5 6 7 8 9 10 11 A DQg DQg A E2 A (16M) ADV A (8M) E3 A DQb DQb B DQg DQg Bc Bg NC W A Bb Bf DQb DQb C DQg DQg Bh Bd NC (128M) E1 NC Be Ba DQb DQb D DQg DQg GND NC NC MCL NC NC GND DQb DQb E DQPg DQPc VCCQ VCCQ VCC VCC VCC VCCQ VCCQ DQPf DQPb F DQc DQc GND GND GND ZQ GND GND GND DQf DQf G DQc DQc VCCQ VCCQ VCC EP2 VCC VCCQ VCCQ DQf DQf H DQc DQc GND GND GND EP3 GND GND GND DQf DQf J DQc DQc VCCQ VCCQ VCC M4 VCC VCCQ VCCQ DQf DQf K NC NC CLK NC GND MCL GND NC NC NC NC L DQh DQh VCCQ VCCQ VCC M2 VCC VCCQ VCCQ DQa DQa M DQh DQh GND GND GND M3 GND GND GND DQa DQa N DQh DQh VCCQ VCCQ VCC MCH VCC VCCQ VCCQ DQa DQa P DQh DQh GND GND GND MCL GND GND GND DQa DQa R DQPd DQPh VCCQ VCCQ VCC VCC VCC VCCQ VCCQ DQPa DQPe T DQd DQd GND NC NC MCL NC NC GND DQe DQe U DQd DQd NC A NC (64M) A NC (32M) A NC DQe DQe V DQd DQd A A A A1 A A A DQe DQe W DQd DQd TMS TDI A A0 A TDO TCK DQe DQe Integrated Silicon Solution, Inc. -- www.issi.com -- 1-800-379-4774 ADVANCE INFORMATION Rev. 00A 06/13/02 IS61FSCS25672 IS61FSCS51236 ISSI (R) IS61NSCS51236 PINOUT 512K X 36 COMMON I/O--TOP VIEW 1 2 3 4 5 6 7 8 9 10 11 A NC NC A E2 A (16M) ADV A E3 A DQb DQb B NC NC Bc NC A (x36) W A Bb NC DQb DQb C NC NC NC Bd NC (128M) E1 NC NC Ba DQb DQb D NC NC GND NC NC MCL NC NC GND DQb DQb E NC DQPc VCCQ VCCQ VCC VCC VCC VCCQ VCCQ NC DQPb F DQc DQc GND GND GND ZQ GND GND GND NC NC G DQc DQc VCCQ VCCQ VCC EP2 VCC VCCQ VCCQ NC NC H DQc DQc GND GND GND EP3 GND GND GND NC NC J DQc DQc VCCQ VCCQ VCC M4 VCC VCCQ VCCQ NC NC K NC NC CLK NC GND MCL GND NC NC NC NC L NC NC VCCQ VCCQ VCC M2 VCC VCCQ VCCQ DQa DQa M NC NC GND GND GND M3 GND GND GND DQa DQa N NC NC VCCQ VCCQ VCC MCH VCC VCCQ VCCQ DQa DQa P NC NC GND GND GND MCL GND GND GND DQa DQa R DQPd NC VCCQ VCCQ VCC VCC VCC VCCQ VCCQ DQPa NC T DQd DQd GND NC NC MCL NC NC GND NC NC U DQd DQd NC A NC (64M) A NC (32M) A NC NC NC V DQd DQd A A A A1 A A A NC NC W DQd DQd TMS TDI A A0 A TDO TCK NC NC 11 x 19 Ball BGA--14 x 22 mm2 Body--1 mm Ball Pitch Integrated Silicon Solution, Inc. -- www.issi.com -- 1-800-379-4774 ADVANCE INFORMATION 06/13/02 Rev. 00A 3 IS61FSCS25672 IS61FSCS51236 ISSI (R) PIN DESCRIPTION TABLE Symbol Pin Location Description Type Comments A A3, A5, A7, A9, B7, U4, U6, U8, V3, V4, V5, V6, V7, V8, V9, W5, W6, W7 Address Input -- A B5 Address Input x36 version ADV A6 Advance Input Active High Bx B3, C9 Byte Write Enable Input Active Low (all versions) Bx B8, C4 Byte Write Enable Input Active Low (x36 and x72 versions) Bx B4, B9, C3, C8 Byte Write Enable Input Active Low (x72 version only) CK K3 Clock Input Active High DQ E2, F1, F2, G1, G2, H1, H2, J1, J2, L10, L11, M10, M11, N10, N11, P10, P11, R10 A10, A11, B10, B11, C10, C11, D10, D11, E11, R1, T1, T2, U1, U2, V1, V2, W1, W2 Data I/O Input/Output x36, and x72 versions Data I/O Input/Output DQ A1, A2, B1, B2, C1, C2, D1, D2, E1, E10, F10, F11, G10, G11, H10, H11, J10, J11, L1, L2, M1, M2, N1, N2, P1, P2, R2, R11, T10, T11, U10, U11, V10, V11, W10, W11 Data I/O Input/Output x72 version only E1 C6 Chip Enable Input Active Low E2 & E3 A4, A8 Chip Enable Input Programmable Active High or Low EP2 & EP3 G6, H6 Chip Enable Program Pin Input -- TCK W9 Test Clock Input Active High TDI W4 Test Data In Input -- TDO W8 Test Data Out Output -- TMS W3 Test Mode Select Input -- L6, M6, J6 Mode Control Pins Input Must tie to Low,Low, and High MCL D6, K6, P6,T6 Must Connect Low Input -- MCH N6 Must Connet high Input -- M2, M3 & M4 4 Integrated Silicon Solution, Inc. -- www.issi.com -- 1-800-379-4774 ADVANCE INFORMATION Rev. 00A 06/13/02 IS61FSCS25672 IS61FSCS51236 ISSI (R) PIN DESCRIPTION TABLE Symbol Pin Location Description Type Comments NC C5, D4, D5, D7, D8, K4, K8, K9, T4, T5, T7, T8, U3, U5, U7, U9 No Connect -- Not connected to die (all versions) NC B5 No Connect -- Not connected to die (x72 version) NC C7 No Connect -- Not connected to die (x72/x36 versions) No Connect -- Not connected to die (x36 version) NC A1, A2, B1, B2, B4, B9, C1, C2, C3, C8, D1, D2, E1, E10, F10, F11, G10, G11, H10, H11, J10, J11, L1, L2, M1, M2, N1, N2, P1, P2, R2, R11, T10, T11, U10, U11, V10, V11, W10, W11 W B6 Write Input Active Low VCC E5, E6, E7, G5, G7, J5, J7, L5, L7, N5, N7, R5, R6, R7 Core Power Supply Input 1.8 V Nominal Input 1.8 V or 1.5 V Nominal VCCQ GND E3, E4, E8, E9, G3, G4, G8, G9, J3, J4, J8, J9 Output Driver Power Supply L3, L4, L8, L9, N3, N4 N8, N9, R3, R4, R8, R9 D3, D9, F3, F4, F5, F7, F8, F9, H3, H4, H5, H7, H8, H9, K5, K7, M3, M4, M5, M7, M8, M9, P3, P4, P5, P7, P8, P9, T3, T9 Ground Input -- F6 Output Impedance Control Input Low = Low Impedance [High Drive] High = High Impedance [Low Drive] Default = High ZQ Integrated Silicon Solution, Inc. -- www.issi.com -- 1-800-379-4774 ADVANCE INFORMATION 06/13/02 Rev. 00A 5 IS61FSCS25672 IS61FSCS51236 ISSI (R) BACKGROUND The central characteristics of the ISSI RAMs are that they are extremely fast and consume little power. Because both operating and interface power is low, RAMs can be implemented in a wide (x72) configuration, providing very high single package bandwidth (in excess of 20 Gb/s in ordinary pipelined configuration) and very low random access time (~6 ns). The use of very low voltage circuits in the core and 1.8V or 1.5V interface voltages allow the speed, power and density performance of RAMs. Although the SigmaRAM family pinouts have been designed to support a number of different common read and write protocol options, not all SigmaRAM implementations will support all possible protocols. The following timing diagrams provide a quick comparison between read and write protocols options available in the context of the SigmaRAM standard. This data sheet covers the single data rate (non-DDR), Flow Through Read SigmaRAM. The character of the applications for fast synchronous SRAMs in networking systems are extremely diverse. RAMs have been developed to address the diverse needs of the networking market in a manner that can be supported with a unified development and manufacturing infrastructure. RAMs address each of the bus protocol options commonly found in networking systems. This allows the RAM to find application in radical shrinks and speed-ups of existing networking chip sets that were designed for use with older SRAMs, like the NBT and Late Write, or Double Data Rate SRAMs, as well as with new chip sets and ASIC's that employ the Echo Clocks and realize the full potential of the RAMs. COMMON I/O SigmaRAM FAMILY MODE COMPARISON--LATE WRITE VS. DOUBLE LATE WRITE DOUBLE LATE WRITE--PIPELINED READ (S1x1Dp). For reference only. CK Address A B C D E F Control R W R W R W DQ QA DB QC DD QE CQ LATE WRITE--PIPELINED READ (S1x1Lp). For reference only. CK Address A B C D E F Control R X W R X W DQ QA DC QD DF CQ 6 Integrated Silicon Solution, Inc. -- www.issi.com -- 1-800-379-4774 ADVANCE INFORMATION Rev. 00A 06/13/02 IS61FSCS25672 IS61FSCS51236 ISSI (R) DOUBLE DATA RATE WRITE--DOUBLE DATA RATE READ (S1x2Lp). For reference only. CK Address A B C D E F Control R X W R X W DQ QA0 QA1 DC0 DC1 QD0 QD1 DF0 CQ READ OPERATIONS WRITE OPERATIONS Flow through Read Read operation is initiated when the following conditions are satisfied at the rising edge of clock: All three chip enables (E1, E2, and E3) are active, the write enable input signal (W) is deasserted high, and ADV is asserted low. The address presented to the address inputs is latched into the address register and presented to the memory core and control logic. The control logic determines that a read access is in progress and allows the requested data to propagate to output. Write operation occurs when the following conditions are satisfied at the rising edge of clock: All three chip enables (E1, E2, and E3) are active and the write enable input signal (W) is asserted low. Data is taken at next rising edge, as a Late Write. Integrated Silicon Solution, Inc. -- www.issi.com -- 1-800-379-4774 ADVANCE INFORMATION 06/13/02 Rev. 00A 7 IS61FSCS25672 IS61FSCS51236 ISSI (R) SINGLE DATA RATE FLOW THROUGH READ CLK Address A XX D C E F E1 W QC QA DQ QD QE CQ Read Deselect Read Read Read Read FLOW THROUGH WRITE AND READ CLK Address A B C D E1 W QA DQ DB QC DD CQ Read 8 Write Read Write Integrated Silicon Solution, Inc. -- www.issi.com -- 1-800-379-4774 ADVANCE INFORMATION Rev. 00A 06/13/02 IS61FSCS25672 IS61FSCS51236 ISSI (R) SPECIAL FUNCTIONS Linear Burst Order Burst Cycles SRAMs provide an on-chip burst address generator that can be utilized, if desired, to further simplify burst read or write implementations. The ADV control pin, when driven high, commands the SRAM to advance the internal address counter and use the counter generated address to read or write the SRAM. The starting address for the first cycle in a burst cycle series is loaded into the SRAM by driving the ADV pin low, into Load mode. Burst Order A[1:0] A[1:0] A[1:0] A[1:0] 1st address 00 01 10 11 2nd address 01 10 11 00 3rd address 10 11 00 01 4th address 11 00 01 10 Note: 1. The burst counter wraps to initial state on the 5th rising edge of clock. The burst address counter wraps around to its initial state after four addresses (the loaded address and three more) have been accessed. SigmaRAMs always count in linear burst order. SIGMA FLOW THROUGH BURST READS WITH COUNTER WRAP-AROUND CLK Address A2 XX XX XX XX XX Internal Address A2 A3 A0 A1 A2 A3 Counter Wraps E1 W ADV 10 DQ QA2 Read Continue 11 00 01 QA3 QA0 QA1 Continue Continue Integrated Silicon Solution, Inc. -- www.issi.com -- 1-800-379-4774 ADVANCE INFORMATION 06/13/02 Rev. 00A Continue QA2 Continue 9 IS61FSCS25672 IS61FSCS51236 ISSI (R) FLOW THROUGH READ BANK SWITCH WITH E1 DESELECT CLK Address A D C XX E F E1 E2 Bank 1 E2 Bank 2 DQ Bank 1 QA DQ Bank 2 QC Read No Op Read Read QD Read Read Note: E1 does not deselect the Echo Clock Outputs. Echo Clock outputs are synchronously deselected by E2 or E3 being sampled false. OUTPUT DRIVER IMPEDANCE CONTROL SigmaRAMs may be supplied with either selectable (high) impedance output drivers. The ZQ pin of SigmaRAMs supplied with selectable impedance drivers, allows selection between RAM nominal drive strength (ZQ low) for multi-drop bus applications and low drive strength (ZQ floating or high) point-to-point applications. The impedance of the data and clock output drivers in these devices can be controlled via the static input ZQ. When ZQ is tied "low", output driver impedance is set to ~25 . When ZQ is tied "high" or left unconnected, output driver impedeance is set to ~50. See the DC Electrical Characteristics section for further information. The SRAM requires 32K cycles of power-up time after VCC reaches its operating range. OUTPUT DRIVER CHARACTERISTICS - TBD 10 Integrated Silicon Solution, Inc. -- www.issi.com -- 1-800-379-4774 ADVANCE INFORMATION Rev. 00A 06/13/02 IS61FSCS25672 IS61FSCS51236 ISSI (R) PROGRAMMABLE ENABLES SRAMs feature two user-programmable chip enable inputs, E2 and E3. The sense of the inputs, whether they function as active low or active high inputs, is determined by the state of the programming inputs, EP2 and EP3. For example, if EP2 is held at VCC , E2 functions as an active high enable. If EP2 is held to GND , E2 functions as an active low chip enable input. Programmability of E2 and E3 allows four banks of depth expansion to be accomplished with no additional logic. By programming the enable inputs of four SRAMs in binary sequence (00, 01, 10, 11) and driving the enable inputs with two address inputs, four SRAMs can be made to look like one larger RAM to the system. BANK ENABLE TRUTH TABLE EP2 EP3 E2 E3 Bank 0 GND GND Active Low Active Low Bank 1 GND Vcc Active Low Active High Bank 2 Vcc GND Active High Active Low Bank 3 Vcc Vcc Active High Active High EXAMPLE FOUR BANK DEPTH EXPANSION SCHEMATIC A0-An E1 CLK W DQ0-DQn Bank 0 A0-An-2 An-1 A E3 A0-A Ann-2 E2 An-1 E1 An CLK Bank 1 A0-An-2 A0-An-2 An-1 An-1 An-1 A E3 A0A -Ann-2 E2 An-1 E1 E1 An CLK Rev. 00A A E3 n n-2 E2 A0A -A An-1 E1 An CLK A E3 A0A -A n n-2 E2 An-1 E1 An CLK W W W W W DQ DQ CQ DQ CQ DQ CQ Integrated Silicon Solution, Inc. -- www.issi.com -- 1-800-379-4774 ADVANCE INFORMATION 06/13/02 Bank 3 Bank 2 A0-An-2 11 IS61FSCS25672 IS61FSCS51236 ISSI (R) SYNCHRONOUS TRUTH TABLE CLK E1 (tn) E ADV W BW (tn) (tn) (tn) (tn) Previous Operation Current Operation DQ (tn) DQ (tn+1) 0(R)1 X F 0 X X X Bank Deselect *** Hi-Z 0(R)1 X X 1 X X Bank Deselect Bank Deselect (Continue) Hi-Z Hi-Z 0(R)1 1 T 0 X X X Deselect *** Hi-Z 0(R)1 X X 1 X X Deselect Deselect (Continue) Hi-Z Hi-Z 0(R)1 0 T 0 0 T X Write Loads new address Stores DQx if BWx = 0 *** Dn (tn) 0(R)1 0 T 0 0 F X Write (Abort) Loads new address No data stored *** Hi-Z 0(R)1 X X 1 X T Write Write Continue Increments address by 1 Stores DQx if BWx = 0 Dn-1 (tn-1) Dn (tn) 0(R)1 X X 1 X F Write Write Continue (Abort) Increments address by 1 No data stored Dn-1 (tn-1) Hi-Z 0(R)1 0 T 0 1 X X Read Loads new address *** Qn (tn) 0(R)1 X X 1 X X Read Read Continue Increments address by 1 Qn-1 (tn-1) Qn (tn) Notes: 1. 2. 3. 4. 5. 6. 12 If E2 = EP2 and E3 = EP3 then E = "T" else E = "F". If one or more BWx = 0 then BW = "T" else BW = "F". "1" = input "high"; "0" = input "low"; "X" = input "don't care"; "T" = input "true"; "F" = input "false". "***" indicates that the DQ input requirement/output state are determined by the previous operation. DQs are tri-stated in response to Bank Deselect, Deselect, and Write commands, one full cycle after the command is sampled. Up to 3 Continue operations may be initiated after iniating a Read or Write operation to burst transfer up to 4 distinct pieces of data per single external address input. If a fourth (4th) Continue operation is initiated, the internal address wraps back to the initial external (base) address. Integrated Silicon Solution, Inc. -- www.issi.com -- 1-800-379-4774 ADVANCE INFORMATION Rev. 00A 06/13/02 IS61FSCS25672 IS61FSCS51236 ISSI (R) READ/WRITE CONTROL STATE DIAGRAM 0,T,0,0 0,T,0,1 0,T,0,1 0,T,0,0 READ WRITE X,F,0,X 1,T,0,X X,X,1,X 0,T,0,0 0,T,0,1 X,F,0,X or X,X,1,X X,X,1,X BANK DESELECT 0,T,0,1 0,T,0,1 X,F,0,X 0,T,0,1 1,T,0,X X,F,0,X 0,T,0,0 X,F,0,X 1,T,0,X X,X,1,X READ CONTINUE 1,T,0,X X,F,0,X 0,T,0,0 X,X,1,X WRITE CONTINUE 1,T,0,X 1,T,0,X or X,X,1,X 0,T,0,0 DESELECT Notes: 1. The notation "X,X,X,X" controlling the state transitions above indicate the states of inputs E1, E, ADV, and W respectively. 2. If (E2 = EP2 and E3 = EP3) then E = "T" else E = "F". 3. "1" = input "high"; "0" = input "low"; "X" = input "don't care"; "T" = input "true"; "F" = input "false". Integrated Silicon Solution, Inc. -- www.issi.com -- 1-800-379-4774 ADVANCE INFORMATION 06/13/02 Rev. 00A 13 IS61FSCS25672 IS61FSCS51236 ISSI (R) CURRENT STATE & NEXT STATE DEFINITION FOR READ/WRITE CONTROL STATE DIAGRAM n n+1 n+2 n+3 CK Command Current State Next State KEY Input Command Code Transition Current State (n) Next State (n+1) ABSOLUTE MAXIMUM RATINGS (All voltages reference to GND ) Symbol Description Value Unit VCC Voltage on VCC Pins -0.5 to 2.5 V VCCQ Voltage in VCCQ Pins -0.5 to 2.3V V VI/O Voltage on I/O Pins -0.5 to VCCQ +0.5 ( 2.3 V max.) V VIN Voltage on Other Input Pins -0.5 to VCCQ +0.5 ( 2.3 V max.) V IIN Input Current on Any Pin 100 mA dc IOUT Output Current on Any Pin 100 mA dc TJ Maximum Junction Temperature 125 C TSTG Storage Temperature -55 to 125 C Note: Permanent device damage may occur if Absolute Maximum Ratings are exceeded. Operation should be limited to Recommended Operating Conditions. Exposure to conditions exceeding Recommended Operating Conditions, for an extended period of time, may affect reliability of this component. POWER SUPPLY CHARACTERISTICS (TA = 0 min., 25 typ, 70 max C) Symbol Parameter Min. Typ. Max. Unit VCC Supply Voltage 1.7 1.8 1.9 V VCCQ(1) 1.8 V I/O Supply Voltage 1.5 V I/O Supply Voltage 1.7 1.4 1.8 1.5 VCC 1.6 V V V Note: 1. Unless otherwise noted, all performance specifications quoted are evaluated for worst case at both 1.4 V VCCQ 1.6V (i.e., 1.5 V I/O) and 1.7 V VCCQ 1.9 V (i.e., 1.8 V I/O) and quoted at whichever condition is worst case. 14 Integrated Silicon Solution, Inc. -- www.issi.com -- 1-800-379-4774 ADVANCE INFORMATION Rev. 00A 06/13/02 IS61FSCS25672 IS61FSCS51236 ISSI (R) CMOS I/O DC INPUT CHARACTERISTICS Symbol Parameter VCCQ Min. Typ. Max. Unit VIH CMOS Input High Voltage 1.8 1.5 1.2 1.0 -- -- VCCQ + 0.3 VCCQ + 0.3 V VIL CMOS Input Low Voltage 1.8 1.5 -0.3 -0.3 -- -- 0.6 0.5 V Note: For devices supplied with CMOS input buffers. Compatible with both 1.8 V and 1.5 V I/O drivers. Undershoot Measurement and Timing Overshoot Measurement and Timing VIH 20% tKC VCC + 1.0V GND 50% 50% VCC GND - 1.0V 20% tKC VIL I/O CAPACITANCE (TA = 25 C, f = 1 MHZ) Symbol Parameter CA CB CCK Address Control Clock Input Capacitance Input Capacitance Input Capacitance CDQ Data Output Capacitance Test conditions Min. Max. Unit VIN = 0 V VIN = 0 V VIN = 0 V -- -- -- 3.5 3.5 3.5 pF pF pF VOUT = 0 V -- 4.5 pF Note: These parameters are sampled and not 100% tested. Integrated Silicon Solution, Inc. -- www.issi.com -- 1-800-379-4774 ADVANCE INFORMATION 06/13/02 Rev. 00A 15 IS61FSCS25672 IS61FSCS51236 ISSI (R) AC TEST CONDITIONS (VCC = 1.8V 0.1V, TA = 0 to 85C) Parameter Symbol Conditions VCCQ Units 1.5V0.1 1.8 0.1 V Input High Level VIH 1.25 1.4 V Input Low Level VIL 0.25 0.4 V Input Rise & Fall Time 2.0 2.0 V/ns Input Reference Level 0.75 0.9 V Clock Input High Voltage VKIH 1.25 1.4 V Clock Input Low Voltage VKIL 0.25 0.4 V Clock Input Rise & Fall Time 2.0 2.0 V/ns Clock Input Reference Level 0.75 0.9 V Output Reference Level 0.75 0.9 V see below see below Output Load Conditions ZQ = VIH Notes: 1. Include scope and jig capacitance. 2. Test conditions as specified with output loading as shown unless otherwise noted. AC TEST LOADS VCCQ = 1.5V VCCQ = 1.8V 0.75V 0.9V 50 50 16.7 50 16.7 DQ 16.7 5 pF 16.7 50 16.7 DQ 5 pF 16.7 50 50 5 pF 50 5 pF 50 0.75V Figure 1 (VCCQ = 1.5V) 16 0.9V Figure 2 (VCCQ = 1.8V) Integrated Silicon Solution, Inc. -- www.issi.com -- 1-800-379-4774 ADVANCE INFORMATION Rev. 00A 06/13/02 IS61FSCS25672 IS61FSCS51236 ISSI (R) SELECTABLE IMPEDANCE OUTPUT DRIVER DC ELECTRICAL CHARACTERISTICS Symbol Parameter Test Conditions Min. Max. Units (1) Low Drive Output High Voltage IOHL = -4 mA VCCQ - 0.4 -- V (1) VOLL Low Drive Output Low Voltage IOLL = 4 mA -- 0.4 V VOHH(2) High Drive Output High Voltage IOHH = -8 mA VCCQ - 0.4 -- V VOLH(2) High Drive Output Low Voltage IOLH = 8 mA -- 0.4 V VOHL Notes: 1. ZQ = 1; High Impedance output driver setting 2. ZQ = 0; Low Impedance output driver setting OUTPUT RESISTANCE Symbol Parameter Test Conditions Min. Typ. Max. Units ROUT Output Resistance VOH, VOL = VCCQ/2 ZQ = VIL VOH, VOL = VCCQ/2 ZQ = VIH 17 25 33 35 50 65 OPERATING CURRENTS Symbol Parameter Test Conditions -7.2 Com. Ind. -7.5 Com. Ind. Units ICC Operating Current E1 < VIL Max. tKHKH > tKHKH Min. All other inputs VIL > VIN > VIH Pipeline x72 x36 600 450 600 450 mA ISB1 & ISB2 Bank Deselect Current & Chip Disable Current E1 < VIH Min. or E2 or E3 False tKHKH > tKHKH Min. All other inputs VIL > VIN > VIH Pipeline x72 x36 250 225 250 225 mA ISB3 CMOS Deselect Current Device Deselected Pipeline x72 All inputs x36 GND+0.10V > VIN > VCC-0.10V 150 150 150 150 mA Note: Com. = 0C to 70C Ind. = -40C to +85C Integrated Silicon Solution, Inc. -- www.issi.com -- 1-800-379-4774 ADVANCE INFORMATION 06/13/02 Rev. 00A 17 IS61FSCS25672 IS61FSCS51236 ISSI (R) OPERATING CURRENTS (continued) Symbol Parameter Test Conditions -8.0 Com. Ind. -8.5 Com. Ind. -9.0 Com. Ind. ICC Operating Current E1 < VIL Max. tKHKH > tKHKH Min. All other inputs VIL > VIN > VIH ISB1 & ISB2 Bank Deselect Current & Chip Disable Current E1 < VIH Min. or E2 or E3 False tKHKH > tKHKH Min. All other inputs VIL > VIN > VIH ISB3 CMOS Deselect Current Units Pipeline x72 x36 500 350 500 350 500 350 mA Pipeline x72 x36 250 225 250 350 250 225 mA Device Deselected Pipeline x72 All inputs x36 GND+0.10V > VIN > VCC-0.10V 150 150 150 150 150 150 mA Note: Com. = 0C to 70C Ind. = -40C to +85C DC ELECTRICAL CHARACTERISTICS (VCC = 1.8V 0.1V, GND = 0V, TA = 0 to 85C) Symbol 18 Parameter Test Conditions Min Typ Max Units ILI Input Leakage Current (Address, Control, Clock) VIN = GND to VCCQ -5 -- 5 uA IMLI Input Leakage Current (EP2, EP3, M2, M3, M4, ZQ) VMIN = GND to VCC -10 -- 10 uA IDLI Input Leakage Current (Data) VDIN = GND to VCCQ -10 -- 10 uA Integrated Silicon Solution, Inc. -- www.issi.com -- 1-800-379-4774 ADVANCE INFORMATION Rev. 00A 06/13/02 IS61FSCS25672 IS61FSCS51236 ISSI (R) AC ELECTRICAL CHARACTERISTICS -7.2 Symbol -7.5 Parameter Min Max tKHKH Clock Cycle Time 7.2 tKHKL Clock HIGH Time tKLKH -8 Min Max Min Max Unit -- 7.5 -- 8.0 -- ns 2.8 -- 3.0 -- 3.2 -- ns Clock LOW Time 2.8 -- 3.0 -- 3.2 -- ns Clock High to Output in Low-Z 0.5 -- 0.5 -- 0.5 -- ns tKHQV Clock High to Output Valid -- 5.0 -- 5.5 -- 6.7 ns tKHQX Clock High to Output Invalid 1.0 -- 1.0 -- 1.0 -- ns Clock High to Output in High-Z 1.0 5.0 1.0 5.5 1.0 6.7 ns tAVKH Address Valid to Clock High 0.6 -- 0.7 -- 0.8 -- ns tKHAX Clock High to Address Don't Care 0.4 -- 0.4 -- 0.5 -- ns tEVKH Enable Valid to Clock High 0.6 -- 0.7 -- 0.8 -- ns tKHEX Clock High to Enable Don't Care 0.4 -- 0.4 -- 0.5 -- ns tWVKH Write Valid to Clock High 0.6 -- 0.7 -- 0.8 -- ns tKHWX Clock High to Write Don't Care 0.4 -- 0.4 -- 0.5 -- ns tBVKH Byte Write Valid to Clock High 0.6 -- 0.7 -- 0.8 -- ns tKHBX Clock High to Byte Write Don't Care 0.4 -- 0.4 -- 0.5 -- ns tDVKH Data In Valid to Clock High 0.6 -- 0.7 -- 0.8 -- ns tKHDX Clock High to Data In Don't Care 0.4 -- 0.4 -- 0.5 -- ns tadvVKH ADV Valid to Clock High 0.6 -- 0.7 -- 0.8 -- ns tKHadvX Clock High to ADV Don't Care 0.4 -- 0.4 -- 0.5 -- ns tKHQX1(1) tKHQZ(1) Notes: 1. Measured at 100 mV from steady state. Not 100% tested. 2. Guaranteed by design. Not 100% tested. 3. For any specific temperature and voltage tKHCZ < tKHCX1. Integrated Silicon Solution, Inc. -- www.issi.com -- 1-800-379-4774 ADVANCE INFORMATION 06/13/02 Rev. 00A 19 IS61FSCS25672 IS61FSCS51236 ISSI (R) AC ELECTRICAL CHARACTERISTICS Parameter -8.5 Min Max -9 Min Max tKHKH Clock Cycle Time 8.5 -- 9.0 -- ns tKHKL Clock HIGH Time 3.4 -- 3.6 -- ns tKLKH Clock LOW Time 3.4 -- 3.6 -- ns Clock High to Output in Low-Z 0.5 -- 0.5 -- ns tKHQV Clock High to Output Valid -- 7.2 -- 7.5 ns tKHQX Clock High to Output Invalid 1.0 -- 1.0 -- ns Clock High to Output in High-Z -- 7.2 -- 7.5 ns tAVKH Address Valid to Clock High 1.1 -- 1.5 -- ns tKHAX Clock High to Address Don't Care 0.5 -- 0.5 -- ns tEVKH Enable Valid to Clock High 1.1 -- 1.5 -- ns tKHEX Clock High to Enable Don't Care 0.5 -- 0.5 -- ns tWVKH Write Valid to Clock High 1.1 -- 1.5 -- ns tKHWX Clock High to Write Don't Care 0.5 -- 0.5 -- ns tBVKH Byte Write Valid to Clock High 1.1 -- 1.5 -- ns tKHBX Clock High to Byte Write Don't Care 0.5 -- 0.5 -- ns tDVKH Data In Valid to Clock High 1.1 -- 1.5 -- ns tKHDX Clock High to Data In Don't Care 0.5 -- 0.5 -- ns tadvVKH ADV Valid to Clock High 1.1 -- 1.5 -- ns tKHadvX Clock High to ADV Don't Care 0.5 -- 0.5 -- ns Symbol tKHQX1(1) tKHQZ(1) Unit Notes: 1. Measured at 100 mV from steady state. Not 100% tested. 2. Guaranteed by design. Not 100% tested. 3. For any specific temperature and voltage tKHCZ < tKHCX1. 20 Integrated Silicon Solution, Inc. -- www.issi.com -- 1-800-379-4774 ADVANCE INFORMATION Rev. 00A 06/13/02 IS61FSCS25672 IS61FSCS51236 ISSI (R) TIMING PARAMETER KEY--FLOW THROGH READ CYCLE TIMING tKHKH tKHKL CK tKHAX tKLKH tAVKH C D E tKHQZ tKHQX tKHQV tKHQX1 DQ QC TIMING PARAMETER KEY--WRITE MODE CONTROL AND DATA IN TIMING CK tKHAX tAVKH A A B tAVKH C tKHAX E1,E2,E3 W, Bn, ADV tDVKH DA DQ tKHDX Note: tnVKH = tEVKH, tWVKH, tBVKH, etc. and tKHnX = tKHEX, tKHWX, tKHBX, etc. Integrated Silicon Solution, Inc. -- www.issi.com -- 1-800-379-4774 ADVANCE INFORMATION 06/13/02 Rev. 00A 21 IS61FSCS25672 IS61FSCS51236 ISSI (R) JTAG PORT OPERATION Overview These devices provide a JTAG Test Access Port (TAP) and Boundary Scan interface using a limited set of IEEE std. 1149.1 functions. This test mode is intended to provide a mechanism for testing the interconnect between master (processor, controller, etc.), SRAMs, other components, and the printed circuit board. In conformance with a subset of IEEE std. 1149.1, these devices contain a TAP Controller and four TAP Registers. The TAP Registers consist of one Instruction Register and three Data Registers (ID, Bypass, and Boundary Scan Registers). Disabling the JTAG Port It is possible to use this device without utilizing the JTAG port. The port is reset at power-up and will remain inactive unless clocked. To assure normal operation of the RAM with the JTAG Port unused, TCK should be tied Low, TDI and TMS may be left floating or tied to VCC . TDO should be left unconnected. JTAG PIN DESCRIPTIONS Pin Pin Name I/O Description TCK Test Clock In Clocks all TAP events. All inputs are captured on the rising edge of TCK and all outputs propagate from the falling edge of TCK. TMS Test Mode Select In The TMS input is sampled on the rising edge of TCK. This is the command input for the TAP controller. An undriven TMS input will produce the same result as a logic one input level. TDI Test Data In In The TDI input is sampled on the rising edge of TCK. This is the input side of the serial registers placed between TDI and TDO. The register placed between TDI and TDO is determined by the state of the TAP Controller and the instruction that is currently loaded in the TAP Instruction Register (refer to the TAP Controller State Diagram). An undriven TDI pin will produce the same result as a logic one input level. TDO Test Data Out Out Output that is active depending on the state of the TAP Controller. Output changes in response to the falling edge of TCK. This is the output side of the serial registers placed between TDI and TDO. Note: This device does not have a TRST (TAP Reset) pin. TRST is optional in IEEE 1149.1. The Test-Logic-Reset state is entered while TMS is held high for five rising edges of TCK. The TAP Controller is also reset automaticly at power-up. 22 Integrated Silicon Solution, Inc. -- www.issi.com -- 1-800-379-4774 ADVANCE INFORMATION Rev. 00A 06/13/02 IS61FSCS25672 IS61FSCS51236 ISSI (R) JTAG PORT REGISTERS Overview Bypass Register The JTAG registers, refered to as Test Access Port (TAP) registers, are selected (one at a time) via the sequences of 1s and 0s applied to TMS as TCK is strobed. Each of the TAP registers are serial shift registers that capture serial input data on the rising edge of TCK and push serial data out on the next falling edge of TCK. When a register is selected, it is placed between the TDI and TDO pins. The Bypass Register is a single-bit register that can be placed between TDI and TDO. It allows serial test data to be passed through the RAM's JTAG Port to another device in the scan chain with as little delay as possible. Instruction Register The Instruction Register holds the instructions that are executed by the TAP controller when it is moved into the Run, Test/Idle, or the various data register states. Instructions are 3 bits long. The Instruction Register can be loaded when it is placed between the TDI and TDO pins. The Instruction Register is automatically preloaded with the IDCODE instruction at power-up or whenever the controller is placed in Test-Logic-Reset state. Boundary Scan Register The Boundary Scan Register is a collection of flip flops that can be preset by the logic level found on the RAM's input or I/O pins. The flip flops are then daisy chained together so the levels found can be shifted serially out of the JTAG Port's TDO pin. The Boundary Scan Register also includes a number of place holder flip flops (always set to a logic 1). The relationship between the device pins and the bits in the Boundary Scan Register is described in the following Scan Order Table. The Boundary Scan Register, under the control of the TAP Controller, is loaded with the contents of the RAMs I/O ring when the controller is in Capture-DR state and then is placed between the TDI and TDO pins when the controller is moved to Shift-DR state. SAMPLE-Z, SAMPLE/PRELOAD and EXTEST instructions can be used to activate the Boundary Scan Register. JTAG TAP BLOCK DIAGRAM 0 Bypass Register TDI 2 1 0 Instruction Register . .. ... .. 31 30 29 ID Code Register TDO 2 1 0 n 2 1 0 Boundary Scan Register TMS TCK Test Access Port (TAP) Controller Integrated Silicon Solution, Inc. -- www.issi.com -- 1-800-379-4774 ADVANCE INFORMATION 06/13/02 Rev. 00A 23 IS61FSCS25672 IS61FSCS51236 ISSI (R) IDENTIFICATION (ID) REGISTER The ID Register is a 32-bit register that is loaded with a device and vendor specific 32-bit code when the controller is put in Capture-DR state with the IDCODE command loaded in the Instruction Register. The code is loaded from a 32-bit on-chip ROM. It describes various attributes of the RAM as indicated below. The register is then placed between the TDI and TDO pins when the controller is moved into Shift-DR state. Bit 0 in the register is the LSB and the first to reach TDO when shifting begins. Die Revision Code Bit # x72 x36 I/O Configuration Not Used ISSI Technology JEDEC Vendor ID Code 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 X X X X 0 0 0 0 0 0 0 0 0 0 0 0 1 1 0 0 0 0 0 1 1 0 1 0 1 0 1 X X X X 0 0 0 0 0 0 0 0 0 0 0 0 1 0 0 0 0 0 0 1 1 0 1 0 1 0 1 Presence Register ID REGISTER CONTENTS 0 1 1 JTAG TAP CONTROLLER STATE DIAGRAM Test Logic Reset 1 0 Run Test Idle 1 Select DR 0 0 1 Select IR 0 1 Capture DR 0 Shift DR 1 1 1 1 Exit1 DR 0 Pause DR 0 1 Exit2 DR 1 1 24 Update DR 0 Capture IR 0 Shift IR 1 0 Exit2 IR 1 1 0 Exit1 IR 0 Pause IR 1 0 1 0 0 Update IR 0 Integrated Silicon Solution, Inc. -- www.issi.com -- 1-800-379-4774 ADVANCE INFORMATION Rev. 00A 06/13/02 IS61FSCS25672 IS61FSCS51236 ISSI (R) TAP CONTROLLER INSTRUCTION SET Overview There are two classes of instructions defined in the Standard 1149.1-1990; standard (public) instructions, and device specific (private) instructions. Some public instructions are mandatory for 1149.1 compliance. Optional public instructions must be implemented in prescribed ways. The TAP on this device may be used to monitor all input and I/O pads.This device will not perform INTEST but can preform the preload portion of the SAMPLE/PRELOAD command. When the TAP controller is placed in Capture-IR state, the two least significant bits of the instruction register are loaded with 001. When the controller is moved to the Shift-IR state, the Instruction Register is placed between TDI and TDO. In this state the desired instruction is serially loaded through the TDI input (while the previous contents are shifted out at TDO). For all instructions, the TAP executes newly loaded instructions only when the controller is moved to Update-IR state. The TAP instruction set for this device is listed in the JTAG TAP Instruction Set Summary. JTAG TAP INSTRUCTION SET SUMMARY Instruction Code Description EXTEST(1) 000 Places the Boundary Scan Register between TDI and TDO. When EXTEST is selected, data will be driven out of the DQ pad. 001 Preloads ID Register and places it between TDI and TDO. 010 Captures I/O ring contents. Places the Boundary Scan Register between TDI and TDO. Forces all Data and Clock output drivers to High-Z. 011 Do not use this instruction; Reserved for Future Use. Replicates BYPASS instruction. Places Bypass Register between TDI and TDO. 100 Captures I/O ring contents. Places the Boundary Scan Register between TDI and TDO. 101 Private instruction. 110 Do not use this instruction; Reserved for Future Use. 111 Places Bypass Register between TDI and TDO. IDCODE(1,2) SAMPLE-Z (1) RFU(1) SAMPLE/PRELOAD(1) Private (1) (1) RFU (1) BYPASS Notes: 1. Instruction codes expressed in binary, MSB on left, LSB on right. 2. Default instruction automatically loaded at power-up and in Test-Logic-Reset state. Integrated Silicon Solution, Inc. -- www.issi.com -- 1-800-379-4774 ADVANCE INFORMATION 06/13/02 Rev. 00A 25 IS61FSCS25672 IS61FSCS51236 ISSI (R) JTAG DC RECOMMENDED OPERATING CONDITIONS (TA = 0 to 85C) Symbol Parameter Test Conditions Min. Max. Unit VTIH JTAG Input High Voltage 1.2 VCC +0.3 V VTIL JTAG Input Low Voltage -0.3 0.6 V VTOH JTAG Output High Voltag CMOS TTL ITOH = -100 ITOH = -8m VCC-0.1 VCC-0.4 -- -- V VTOL JTAG Output Low Voltage CMOS TTL ITOL = 100 ITOL = 8m -- -- 0.1 0.4 V VTIN=GND to VCC -10 10 ITLI JTAG Input Leakage Current JTAG AC TEST CONDITIONS (VCC = 1.8V 0.1V, TA = 0 to 85C) Symbol Parameter Unit VTIH JTAG Input High Voltage 1.6 V VTIL JTAG Input Low Voltage 0.2 V JTAG Input Rise & Fall Time 1.0 V/ns JTAG Input Reference Level 0.9 V JTAG Output Reference Level 0.9 V JTAG Output Load Condition 26 Test Conditions see AC TEST LOADS Integrated Silicon Solution, Inc. -- www.issi.com -- 1-800-379-4774 ADVANCE INFORMATION Rev. 00A 06/13/02 IS61FSCS25672 IS61FSCS51236 ISSI (R) JTAG PORT AC ELECTRICAL CHARACTERISTICS Symbol Parameter Min Max Unit tTHTH TCK Cycle Time 20 -- ns tTHTL TCK High Pulse Width 8 -- ns tTLTH TCK Low Pulse Width 8 -- ns tMVTH TMS Setup Time 5 -- ns tTHMX TMS Hold Time 5 -- ns tDVTH TDI Set Up Time 5 -- ns tTHDX TDI Hold Time 5 -- ns tTLQV TCK Low to TDO Valid -- 10 ns tTLQX TCK Low to TDO Hold 0 -- ns JTAG PORT TIMING DIAGRAM tTHTL tTLTH tTHTH TCK tMVTH tTHMX TMS tDVTH tTHDX TDI TDO tTLQX tTLQV Integrated Silicon Solution, Inc. -- www.issi.com -- 1-800-379-4774 ADVANCE INFORMATION 06/13/02 Rev. 00A 27 IS61FSCS25672 IS61FSCS51236 ISSI (R) INSTRUCTION DESCRIPTIONS BYPASS When the BYPASS instruction is loaded to the Instruction Register, the Bypass Register is placed between TDI and TDO. This occurs when the TAP controller is moved to the Shift-DR state. This allows the board level scan path to be shortened to facilitate testing of other devices in the scan path. SAMPLE/PRELOAD SAMPLE/PRELOAD is a Standard 1149.1 mandatory public instruction. When the SAMPLE/PRELOAD instruction is loaded in the Instruction Register, moving the TAP controller into the Capture-DR state loads the data in the RAMs input and I/O buffers into the Boundary Scan Register. Some Boundary Scan Register locations are not associated with an input or I/O pin, and are loaded with the default state identified in the BSDL file. Because the RAM clock is independent from the TAP Clock (TCK) it is possible for the TAP to attempt to capture the I/O ring contents while the input buffers are in transition (i.e. in a metastable state). Although allowing the TAP to sample metastable inputs will not harm the device, repeatable results cannot be expected. RAM input signals must be stabilized for long enough to meet the TAP's input data capture set-up plus hold time (tTS plus tTH ). The RAM's clock inputs need not be paused for any other TAP operation except capturing the I/O ring contents into the Boundary Scan Register. Moving the controller to Shift-DR state then places the Boundary Scan Register between the TDI and TDO pins. EXTEST EXTEST is an IEEE 1149.1 mandatory public instruction. It is to be executed whenever the instruction register is loaded with all logic 0s. The EXTEST command does not block or override the RAM's input pins; therefore, the RAM's internal state is still determined by its input pins. Typically, the Boundary Scan Register is loaded with the desired pattern of data with the SAMPLE/PRELOAD command. Then the EXTEST command is used to output the Boundary Scan Register's contents, in parallel, on the RAM's data output drivers on the falling edge of TCK when the controller is in the Update-IR state. Alternately, the Boundary Scan Register may be loaded in parallel using the EXTEST command. When the EXTEST instruction is selected, the state of all the RAM's input and I/O pins, as well as the default values at Scan Register locations not associated with a pin (pin marked NC), are transferred in parallel into the Boundary Scan Register on the rising edge of TCK in the Capture-DR state. Boundary Scan Register contents may then be shifted serially through the register using the Shift-DR command or the controller can be skipped to the Update-DR command. When the controller is placed in the Update-DR state, a RAM that has fully compliant EXTEST function drives out the value of the Boundary Scan Register location associated with each output pin. IDCODE The IDCODE instruction causes the ID ROM to be loaded to the ID register when the controller is in Capture-DR mode and places the ID register between the TDI and TDO pins in Shift-DR mode. The IDCODE instruction is the default instruction loaded in at power up and any time the controller is placed in the Test-Logic-Reset state. SAMPLE-Z If the SAMPLE-Z instruction is loaded to the instruction register, all RAM outputs are forced to inactive state (highZ) and the Boundary Scan Register is connected between TDI and TDO when the TAP controller is moved to the ShiftDR state. RFU These instructions are reserved for future use. In this device they replicate the BYPASS instruction. 28 Integrated Silicon Solution, Inc. -- www.issi.com -- 1-800-379-4774 ADVANCE INFORMATION Rev. 00A 06/13/02 IS61FSCS25672 IS61FSCS51236 ISSI (R) BOUNDARY SCAN ORDER ASSIGNMENTS (by Exit Sequence) PH =Place Holder X72 Ball Loc. Sequence Pkg. Ball 1 A0 2 3 X36 Sequence Pkg. Ball W6 1 A0 A V7 2 A A V8 3 A 4 A U8 4 A 5 A V9 5 A 6 A U6 6 A (1) 7 PH U5 7 PH(1) 8 A W7 8 A 9 (1) PH U7 9 PH(1) 10 MCL T6 10 MCL 11 M3 M6 11 M3 12 M4 J6 12 M4 13 MCL K6 13 MCL 14 MCL D6 14 MCL 15 (1) C7 15 PH(1) PH 16 Be C8 17 Ba C9 16 Ba 18 Bb B8 17 Bb 19 Bf B9 20 W B6 18 W 21 ADV A6 19 ADV 22 A B7 20 A 23 E3 A8 21 E3 24 A A9 22 A 25 ZQ F6 23 ZQ 26 A A3 24 A 27 E2 A4 25 E2 28 A A5 26 A 29 A A7 27 A B5 28 AO36 29 Bc 30 Bc B3 31 Bg B4 32 Bh C3 33 Bd C4 30 Bd 34 PH(1) C5 31 PH(1) 35 CE1 C6 32 CE1 36 CP2 G6 33 CP2 37 CP3 H6 34 CP3 38 CK K3 35 CK 39 M2 L6 36 M2 Note: 1. Input of PH register connected to Vss. Integrated Silicon Solution, Inc. -- www.issi.com -- 1-800-379-4774 ADVANCE INFORMATION 06/13/02 Rev. 00A 29 IS61FSCS25672 IS61FSCS51236 ISSI (R) BOUNDARY SCAN ORDER ASSIGNMENTS (by Exit Sequence) Continued: X72 30 Ball Loc. Sequence Pkg. Ball 40 NC N6 41 MCL 42 A 43 X36 Sequence Pkg. Ball 37 NC P6 38 MCL V3 39 A A U4 40 A 44 A V4 41 A 45 A V5 42 A 46 A W5 43 A 47 A1 V6 44 A1 48 DQd W2 45 DQd 49 DQd W1 46 DQd 50 DQd V2 47 DQd 51 DQd V1 48 DQd 52 DQd U2 49 DQd 53 DQd U1 50 DQd 54 DQd T2 51 DQd 55 DQd T1 52 DQd 56 DQPd R1 53 DQPd 57 DQPh R2 58 DQh P2 59 DQh P1 60 DQh N2 61 DQh N1 62 DQh M2 63 DQh M1 64 DQh L2 65 DQh L1 66 NC K2 54 NC 67 NC K1 55 NC 68 DQc J2 56 DQc 69 DQc J1 57 DQc 70 DQc H2 58 DQc 71 DQc H1 59 DQc 72 DQc G2 60 DQc 73 DQc G1 61 DQc 74 DQc F2 62 DQc 75 DQc F1 63 DQc 76 DQPc E2 64 DQPc 77 DQPg E1 78 DQg D2 79 DQg D1 80 DQg C2 81 DQg C1 Integrated Silicon Solution, Inc. -- www.issi.com -- 1-800-379-4774 ADVANCE INFORMATION Rev. 00A 06/13/02 IS61FSCS25672 IS61FSCS51236 ISSI (R) BOUNDARY SCAN ORDER ASSIGNMENTS (by Exit Sequence) Continued: X72 Ball Loc. Sequence Pkg. Ball 82 DQg B2 83 DQg B1 84 DQg A2 85 DQg A1 86 DQb 87 88 X36 Sequence Pkg. Ball A10 65 DQb DQb A11 66 DQb DQb B10 67 DQb 89 DQb B11 68 DQb 90 DQb C10 69 DQb 91 DQb C11 70 DQb 92 DQb D10 71 DQb 93 DQb D11 72 DQb 94 DQPb E11 73 DQPb 95 DQPf E10 96 DQf F10 97 DQf F11 98 DQf G10 74 NC 99 DQf G11 100 DQf H10 101 DQf H11 102 DQf J10 103 DQf J11 104 NC K11 105 NC K10 75 NC 106 DQa L10 76 DQa 107 DQa L11 77 DQa 108 DQa M10 78 DQa 109 DQa M11 79 DQa 110 DQa N10 80 DQa 111 DQa N11 81 DQa 112 DQa P10 82 DQa 113 DQa8 P11 83 DQa8 114 DQPa9 R10 84 DQPa9 115 DQPe1 R11 116 DQe2 T10 117 DQe3 T11 118 DQe4 U10 119 DQe5 U11 120 DQe6 V10 121 DQe7 V11 122 DQe8 W10 123 DQe9 W11 Integrated Silicon Solution, Inc. -- www.issi.com -- 1-800-379-4774 ADVANCE INFORMATION 06/13/02 Rev. 00A 31 IS61FSCS25672 IS61FSCS51236 ISSI (R) ORDERING INFORMATION Commercial Range: 0C to 70C Cycle Time 256K x 72 9 Package IS61FSCS25672-9B 209-Ball BGA IS61FSCS25672-8.5B 209-Ball BGA IS61FSCS25672-8B 209-Ball BGA 7.5 IS61FSCS25672-7.5B 209-Ball BGA 7.2 IS61FSCS25672-7.2B 209-Ball BGA IS61FSCS51236-9B 209-Ball BGA IS61FSCS51236-8.5B 209-Ball BGA IS61FSCS51236-8B 209-Ball BGA 7.5 IS61FSCS51236-7.5B 209-Ball BGA 7.2 IS61FSCS51236-7.2B 209-Ball BGA 8.5 8 512K x 36 Order Part No. 9 8.5 8 Industrial Range: -40C to 85C FrequencySpeed (ns) Order Part No. Package TBD 32 Integrated Silicon Solution, Inc. -- www.issi.com -- 1-800-379-4774 ADVANCE INFORMATION Rev. 00A 06/13/02