T4-LDS-0185, Rev. 2 (121562) ©2012 Microsemi Corporation Page 1 of 6
2N3019
Compliant LOW POWER NPN SILICON TRANSISTOR
Qualified per MIL-PRF-19500/391
Qualified Levels:
JAN, JANTX,
JANTXV, and JANS
DESCRIPTION
This 2N3019 NPN leaded silicon transistor device is military qualified for high-reliability
applications. Microsemi also offers numerous other transistor products to meet higher and
lower power ratings with various switching speed requirements in both through-hole and
surface-mount packages.
TO-5 Package
Also available in:
TO-39 (TO-205AD)
(short-leaded)
2N3019S
TO-46 (TO-206AB)
(leaded)
2N3057A
TO-18 (TO-206AA)
(leaded)
2N3700
UB package
(leaded)
2N3700UB
Important: For the latest information, vis it our website http://www.microsemi.com.
FEATURES
• JEDEC registered 2N3019 number.
• JAN, JANTX, JANTXV and JANS qualifications are av aila ble per MIL-PRF-19500/391.
• Rad hard levels are also available per MIL-PRF-19500/39 1.
(For RHA datasheet see JANSD2N3019.)
• RoHS compliant by design.
APPLICATIONS / BENEFITS
• Long leaded TO-5 package.
• Lightweight.
• Low power.
• Military and other high-reliability applications.
MAXIMUM RATINGS @ TA = +25 oC unless otherwise noted
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
Parameters/Test Conditions
Symbol
Value
Unit
Junction and Storage Temperature
TJ and TSTG
-65 to +200
oC
Thermal Resistance Junction-to-Ambient
R
ӨJA
195
oC/W
Thermal Resistance Junction-to-Case
RӨJC
30
oC/W
Collector-Emitter Voltage
VCEO
80
V
Collector-Base Voltage
VCBO
140
V
Emitter-Base Voltage
VEBO
7.0
V
Collector Current
IC
1.0
A
Total Power Dissipation: @ TA = +25
o
C
(1)
@ TC = +25
o
C
(2)
PD 0.8
5.0
W
Notes: 1. Derate linearl y 4.6 mW/°C for TA ≥ +25 °C.
2. Derate linearly 28.6 mW/°C for TC ≥ +25 °C.
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2N3019
MECHANICAL and PACKAGING
• CASE: Hermetically sealed, kovar base, nickel cap.
• TERMINALS: Gold plate, solder dip (Sn63/Pb37) available upon request. NOTE: Solder dip will eliminate RoHS compliance.
• MARKING: Part number, date code, manufacturer’s ID and s er ial nu mber.
• POLARITY: NPN.
• WEIGHT: Approximately 1.064 grams.
• See Package Dimensions on last page.
PART NOMENCLATURE
JAN 2N3019
Reliability Level
JAN = JAN level
JANTX = JANTX level
JANTXV = JANTXV level
JANS = JANS level
Blank = Commercial
JEDEC type number
(see Electrical Characteristics
table)
SYMBOLS & DEFINITIONS
Symbol
Definition
f
Frequency
IB
Base current (dc)
IE
Emitter current (dc)
TA
Ambient temperature
TC
Case temperature
VCB
Collector to base voltage (dc)
VCE
Collector to emitter voltage (dc)
VEB
Emitter to base voltage (dc)
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2N3019
ELECTRICA L CHARACTERISTICS @ TA = +25 °C, unless otherwise noted
Parameters / Test Conditions Symbol Min. Max. Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Current
IC = 30 mA
V(BR)CEO 80 V
Collector-Base Cutoff Current
VCB = 140 V
ICBO 10 µA
Emitter-Base Cutoff Current
VEB = 7 V
IEBO1 10 µA
Collector-Emitter Cutoff Current
VCE = 90 V
ICES 10 ηA
Emitter-Base Cutoff Current
VEB = 5.0 V
IEBO2 10 ηA
ON CHA RACTERISTICS
Forward-Current Transfer Ratio
I
C
= 150 mA, V
CE
= 10 V
IC = 0.1 mA, VCE = 1 0 V
IC = 10 mA, VCE = 10 V
IC = 500 mA, VCE = 10 V
IC = 1.0 A, VCE = 10 V
hFE
100
50
90
50
15
300
300
300
Collector-Emitter Saturation Voltage
I
C
= 150 mA, I
B
= 15 mA
IC = 500 mA, IB = 50 mA VCE(sat)
0.2
0.5 V
Base-Emitter Saturation Voltage
IC = 150 mA, IB = 15 mA
VBE(sat)
1.1
V
DYNAMIC CHARA CTERISTICS
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
Small-Signal Short-Circuit Forward Current Transfer Ratio
I
C
= 1.0 mA, V
CE
= 5.0 V, f = 1.0 kHz
h
fe
80
400
Magnitude of Small-Signal Shor t-Circuit Forward Current
Transfer Ratio
|hfe|
I
C
= 50 mA, V
CE
= 10 V, f = 20 MHz
5.0
20
Output Capac ita nc e
Cobo
pF
V
CB
= 10 V, I
E
= 0, 100 kHz ≤ f ≤ 1.0 MHz
12
Input Capacitance
Cibo
pF
V
EB
= 0.5 V, I
C
= 0, 100 kHz ≤ f ≤ 1.0 MHz
60
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2N3019
ELECTRICA L CHARACTERISTICS @ TA = +25 °C, unless otherwise noted (continued)
SAFE OPERATION AREA (See SOA graph below and MIL-STD-750, method 3053)
DC Tests
TC = 25 °C, 1 cycle, t = 10 ms
Test 1
V
CE
= 10 V
IC = 500 mA
Test 2
V
CE
= 40 V
IC = 125 mA
Test 3
V
CE
= 80 V
I
C
= 60 mA
(1) Pul se Test: Pulse Width = 300 µs, duty cycle ≤ 2.0%.
VCE – COLLECTOR – EMITTER VOLTAGE – V
Maximum Safe Operating Area
I
C
– COLLECTOR CURRE NT - µA
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2N3019
GRAPHS
TA (oC) Ambient
FIGURE 1
Temperature – Power Derating (RӨJA)
TC (oC) Case at base
FIGURE 2
Temperature – Power Derating (RӨJC)
Maximum DC Operation Rating (W) Maximum DC Operation Rating (W)
T4-LDS-0185, Rev. 2 (121562) ©2012 Microsemi Corporation Page 6 of 6
2N3019
PACKAGE DIMENSIONS
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for general information only.
3. Beyond r (radius) maximum, TW shall be held for a minimum length of .011 (0.28 mm).
4. Dimension TL measured from maximum HD.
5. Body contour optional within zone defined by HD, CD, and Q.
6. Leads at gauge plane .054 +.001 -.000 inch (1.37 +0.03 -0.00 mm) below seating plane shall be within .007 inch (0.18 mm)
radius of true position (TP) at maximum material condition (MMC) relative to tab at MMC. This device may be measured by
direct methods.
7. Dimension LU applies between L1 and L2. Dimension LD applies between L2 and minimum. Diameter is uncontrolled in L1
and beyond LL minimum.
8. All three leads.
9. The collector shall be internally connected to the case.
10. Dimension r (radius) applies to both inside corners of tab.
11. In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology.
12. Lead 1 = emitter, lead 2 = base, lead 3 = collector.
Dimensions
Symbol
Inches
Millimeters
Notes
Min
Max
Min
Max
CD
.305
.335
7.75
8.51
CH
.240
.260
6.10
6.60
HD
.335
.370
8.51
9.40
LC
.200 TP
5.08 TP
6
LD
.016
.021
0.41
0.53
7, 8
LL
1.500
1.750
38.10
44.45
7, 8
LU
.016
.019
0.41
0.48
7, 8
L1
.050
1.27
7, 8
L2
.250
6.35
7, 8
Q
.050
1.27
5
TL
.029
.045
0.74
1.14
4
TW
.028
.034
0.71
0.86
3
r
.010
0.25
10
α
45° TP
45° TP
6
P
.100
-
2.54
-
