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Ver.2013-04-23
NJG1131HA8
UHF BAND LOW NOISE AMPLIFIER GaAs MMIC
IGENERAL DESCRIPTION IPACKAGE OUTLINE
NJG1131HA8 is a low noise amplifier GaAs MMIC designed for
mobile digital TV application (470~770 MHz).
This IC features good gain flatness, and low gain characteristic
in out-of-band. This IC achieves low current consumption, low
noise figure and low distortion. Also, this IC is integrated the
ESD protection circuit.
An ultra-small and ultra-thin package of USB6-A8 is adopted.
IAPPLICATIONS
Wide band application from 470MHz to 770MHz
Mobile TV and Digital TV applications
Mobile phone and tablet PC applications
IFEATURES
G Wide operating frequency range 470~770MHz
G Low voltage operation +2.7V typ.
G Low current consumption 3.4mA typ.
G Gain 10.0dB typ.
G Low noise figure 1.4dB typ.
G High P-1dB(IN) -5.0dBm typ.
G High Input IP3 +5.0dBm typ.
G Ultra-small & ultra-thin package USB6-A8 (Package size: 1mm x 1.2mm x 0.38mm typ.)
I
II
IPIN CONFIGURATION
NJG1131HA8
Pin Connection
1. GND
2. RFIN
3. GND
4. GND
5. RFOUT
6. VG
(Top View)
GND
GND
GND
Bias
Circuit
RFIN
RFOUTVG
1
2
5
6
4
3
1 Pin INDEX
Note: Specifications and description listed in this catalog are subject to change without notice.
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NJG1131HA8
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II
I ABSOLUTE MAXIMUM RATINGS
T
a
=+25°C, Z
s
=Z
l
=50 ohm
PARAMETER SYMBOL
CONDITIONS RATINGS UNITS
Drain Voltage V
DD
VDD terminal 5 V
Input power P
IN
V
DD
=2.7V +15 dBm
Power dissipation P
D
On PCB board, Tjmax=150°C 150 mW
Operating temperature T
opr
-40~+85 °C
Storage temperature T
stg
-55~+150 °C
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II
I ELECTRICAL CHARACTERISTICS 1 (DC)
General conditions: V
DD
=2.7V, T
a
=+25°C, Z
s
=Z
l
=50 ohm, with application circuit.
PARAMETERS SYMBOL
CONDITIONS MIN TYP MAX UNITS
Operating voltage V
DD
2.3 2.7 3.6 V
Operating Current
I
DD
RF OFF - 3.4 5.0 mA
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II
I ELECTRICAL CHARACTERISTICS 2
(RF)
General conditions: V
DD
= 2.7V, f
RF
=470~770MHz, T
a
=+25°C, Z
s
=Z
l
=50 ohm, with application circuit.
PARAMETERS SYMBOL
CONDITIONS MIN TYP MAX UNITS
Operating Frequency f
RF
470 620 770 MHz
Small signal gain Gain 8.0 10.0 12.0 dB
Gain flatness G
flat
- 1.1 1.4 dB
Noise figure NF Exclude PCB & connector
losses (0.05dB) - 1.4 1.8 dB
Input power at 1dB gain
compression point P
-1dB(IN)
-8.0 -5.0 - dBm
Input 3rd order
intercept point IIP3 f1=f
RF
, f2=f
RF
+100kHz,
Pin=-28dBm +2.0 +5.0 - dBm
RF IN VSWR VSWRi - 2.6 3.0
RF OUT VSWR VSWRo - 2.9 3.3
NJG1131HA8
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ITERMINAL INFORMATION
No. SYMBOL DESCRIPTION
1 GND Ground terminal.
2 RFIN RF input terminal. This terminal requires the DC-blocking capacitor and the
DC-feed Inductor as shown in the application circuit.
3 GND Ground terminal.
4 GND Ground terminal.
5 RFOUT RF output terminal. This terminal requires the external matching circuit as
shown in the application circuit.
6 VG Power supply pin of the bias circuit. Please supply the voltage as same as the
LNA voltage.
CAUTION
1) Ground terminals (1pin, 3pin and 4pin) should be connected with the ground plane close as possible.
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NJG1131HA8
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II
I ELECTRICAL CHARACTERISTICS
(
Conditions: T
a
=+25°C, VDD=2.7V, Z
s
=Z
l
=50 ohm, with application circuit.)
0
5
10
15
20
400 450 500 550 600 650 700 750 800
IIP3, OIP3 vs. Frequency
(f1=Frequency, f2=Frequency+0.1MHz, Pin=-28dBm)
IIP3, OIP3 (dBm)
Frequency (MHz)
OIP3
IIP3
-15
-10
-5
0
5
400 450 500 550 600 650 700 750 800
P-1dB(IN) vs. Frequency
P-1dB(IN) (dBm)
Frequency (MHz)
P-1dB(IN)
4
5
6
7
8
9
10
11
12
0
0.5
1
1.5
2
2.5
3
3.5
4
400 450 500 550 600 650 700 750 800
Gain, NF vs. Frequency
Gain (dB)
NF (dB)
Frequency (MHz)
NF
Gain
-100
-80
-60
-40
-20
0
20
-40 -30 -20 -10 0 10
Pout, IM3 vs. Pin
(f1=620MHz, f2=620.1MHz)
Pout, IM3 (dBm)
Pin (dBm)
Pout
IM3 IIP3=+7.6dBm
4
5
6
7
8
9
10
11
12
0
1
2
3
4
5
6
7
8
-40 -35 -30 -25 -20 -15 -10 -5 0
Gain, IDD vs. Pin
(fRF=620MHz)
Gain (dB)
IDD (mA)
Pin (dBm)
IDD
Gain
P-1dB(IN)=-3.4dBm
-35
-30
-25
-20
-15
-10
-5
0
5
10
-40 -35 -30 -25 -20 -15 -10 -5 0
Pout vs. Pin
(fRF=620MHz)
Pout (dBm)
Pin (dBm)
Pout
P-1dB(IN)=-3.4dBm
NJG1131HA8
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I
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I ELECTRICAL CHARACTERISTICS
(
Conditions: T
a
=+25°C, VDD=2.7V, Z
s
=Z
l
=50 ohm, with application circuit.)
0
1
2
3
4
5
6
7
8
0 1 2 3 4 5
VSWR vs. VDD
(fRF=470~770MHz)
VSWRi(max.), VSWRo(max.)
VDD (V)
VSWRi(max.)
VSWRo(max.)
0
1
2
3
4
5
6
7
0 1 2 3 4 5
IDD vs. VDD
(RF OFF)
IDD (mA)
VDD (V)
IDD
-5
0
5
10
15
20
25
0 1 2 3 4 5
IIP3, OIP3 vs. VDD
(f1=620MHz, f2=620.1MHz, Pin=-28dBm)
IIP3, OIP3 (dBm)
VDD (V)
OIP3
IIP3
-15
-10
-5
0
5
012345
P-1dB(IN) vs. VDD
(fRF=620MHz)
P-1dB(IN) (dBm)
VDD (V)
P-1dB(IN)
0
2
4
6
8
10
12
0
1
2
3
4
5
6
0 1 2 3 4 5
Gain, NF vs. VDD
(fRF=620MHz)
Gain (dB)
NF (dB)
VDD (V)
NF
Gain
0
5
10
15
20
25
30
0 5000 10000 15000 20000
K-factor vs. Frequency
K-factor
Frequency (MHz)
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NJG1131HA8
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I ELECTRICAL CHARACTERISTICS
(
Conditions: VDD=2.7V, Z
s
=Z
l
=50 ohm, with application circuit.)
0
1
2
3
4
5
6
7
8
-50 0 50 100
VSWR vs. Temp.
(fRF=470~770MHz)
VSWRi(max.), VSWRo(max.)
Temperature (C
o
)
VSWRi(max.)
VSWRo(max.)
0
1
2
3
4
5
6
7
-50 0 50 100
IDD vs. Temp.
(RF OFF)
IDD (mA)
Temperature (C
o
)
IDD
0
5
10
15
20
25
-50 0 50 100
IIP3, OIP3 vs. Temp.
(f1=620MHz, f2=620.1MHz, Pin=-28dBm)
IIP3, OIP3 (dBm)
Temperature (C
o
)
IIP3
OIP3
-15
-10
-5
0
5
-50 0 50 100
P-1dB(IN) vs. Temp.
(fRF=620MHz)
P-1dB(IN) (dBm)
Temperature (C
o
)
P-1dB(IN)
0
2
4
6
8
10
12
0
1
2
3
4
5
6
-50 0 50 100
Gain, NF vs. Temp.
(fRF=620MHz)
Gain (dB)
NF (dB)
Temperature (C
o
)
NF
Gain
NJG1131HA8
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I
II
I ELECTRICAL CHARACTERISTICS
(
Conditions: T
a
=+25°C, VDD=2.7V, Z
s
=Z
l
=50 ohm, with application circuit.)
S11, S22 S21, S12
Zin, Zout
VSWR
S21, S12 (~20GHz)
S11, S22 (~20GHz)
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NJG1131HA8
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I TEST CIRCUIT
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I TEST PCB LAYOUT
PRECAUTIONS
[1] C1 is a DC-Blocking capacitor, and L1 is a DC-feed inductor.
[2] L2, L3, and C2 formed the output matching circuit.
[3] C3 is a bypass capacitor.
[4]
Ground terminals (1pin, 3pin
and 4pin) should be connected with ground plane as close as possible
in order to limit ground path induction.
[5] All external parts are placed as close as possible to the IC.
Parts ID Notes
L1~L3 MURATA
(LQP03T series)
C1~C3 MURATA
(GRM03 series)
RFIN
RFOUT
GND
GND
V
DD
=2.7V
GND
Bias
Circuit
RFIN
RFOUTVG
1
2
5
6
L2
56nH
L1
33nH
C1
68pF
L3
27nH
C2
3pF
C3
1000pF
4
3
RF IN
RF OUT
V
DD
L1
C1
L2
C2
L3
C3
PCB (FR-4):
t=0.2mm
MICROSTRIP LINE
WIDTH=0.4mm (Z
0
=50 ohm)
PCB SIZE=16.8mmx16.8mm
Parts List
NJG1131HA8
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I
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I MEASUREMENT BLOCK DIAGRAM
DUT
Network
Analyzer
VDD=2.9V
Port1
RF Output
RF Input
Port2
V
DD
=2.7V
S parameter Measurement Block Diagram
Noise Figure Measurement Block Diagram
DUT
NF
Meter
VDD=2.9V
N.S. Output
RF Output
RF Input
Input
Noise Source
V
DD
=2.7V
Analyzer
IF and IM3 Measurement Block Diagram for IIP3
freq1
freq2
Signal
Generator
Signal
Generator
3dB
Attenuator
3dB
Attenuator
Power
Comb.
DUT
RF Input
RF Output
V
DD
=2.7V
Spectrum
Analyzer
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NJG1131HA8
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IPACKAGE OUTLINE
(USB6-A8)
Caution
s
on using
this
product
This product contains Gallium-Arsenide (GaAs) which is a harmful material.
• Do NOT eat or put into mouth.
• Do NOT dispose in fire or break up this product.
• Do NOT chemically make gas or powder with this product.
•
To
wast
e
th
is
product, please obey the relati
ng
law
of
y
our
country.
This product may be damaged with electric static discharge (ESD) or spike voltage. Please hand
le
with care to avoid these damages
.
[CAUTION]
The specifications on this databook are only
given for information , without any guarantee
as regards either mistakes or omissions. The
application circuits in this databook are
described only to show representative usages
of the product and not intended for the
guarantee or permission of any right including
the industrial rights.
Photo resist coating
TERMINAL TREAT :Au
Substrate :FR5
Molding material :Epoxy resin
UNIT :mm
WEIGHT :1.1mg
0.2 (MIN0.15)
1.2
±
0.05
0.8
0.4
0.2
±
0.04
6
R0.05
5
1
4
2
3
0.4
1.0
±
0.05
0.2
±
0.07
0.2
±
0.04
0.6
0.1
±
0.05
C0.1
0.38
±
0.06
0.038-
0.009
+0.012
S
0.03
S
