IRF232,233 8.0 AMPERES 200, 150 VOLTS Rps(ON) = 0.6 2 ne YOWER IMOS [FE FIELD EFFECT POWER TRANSISTOR This series of N-Channel Enhancement-mode Power MOSFETs utilizes GEs advanced Power DMOS technology to achieve low on-resistance with excellent device rugged- ness and reliability. N-CHANNEL This design has been optimized to give superior performance in most switching applications including: switching power 5 s supplies, inverters, converters and solenoid/relay drivers. CASE STYLE TO-204AA (TO-3) Aliso, the extended safe operating area with good linear DIMENSIONS ARE IN INCHES AND (MILLIMETERS) transfer characteristics makes it well suited for many linear 08452147) 9.00) MAK applications such as audio amplifiers and servo motors. MAK Features + SEATING PLANE ili tre . as 9.043(1.00)_ ' ~ oC .426(10.82) MIN. e Polysilicon gate Improved stability and reliability aSee OM {fe 1.060(26.68) MAX.*] 0.675(17.15) { 0.660(16.81) No secondary breakdown Excellent ruggedness Ultra-fast switching Independent of temperature Voltage controlled High transconductance Low input capacitance Reduced drive requirement Excellent thermal stability Ease of paralleling GAST TEMP. FIEFERENCE POINT DRAIN [*~ .208(5.21) 1.197 (30.40) 1.177(29.80) 1.573(39.96) MAX. 0.228(5.72) DRAIN 0.182(4.09) DIA. (CASE) 0:18(3.64) 2 HOLES 0,440(11.18 0.420(10.67) maximum ratings (Tc = 25C) (unless otherwise specified) RATING SYMBOL IRF232 IRF233 UNITS Drain-Source Voltage Voss 200 150 Volts Drain-Gate Voltage, Res = 1M0 VoGR 200 150 Volts Continuous Drain Current g To = 26C Ip 8.0 8.0 A To = 100C 5.0 5.0 A Pulsed Drain Current lpm 32 32 A Gate-Source Voltage Vas +20 +20 Volts Total Power Dissipation @ Tc = 25C Pp 75 75 Watts Derate Above 25C 0.6 0.6 w/?C Operating and Storage Junction Temperature Range Ty, Tsta -55 to 150 -55 to 150 C thermal characteristics Thermal Resistance, Junction to Case Rec 1.67 1.67 C/W Thermai Resistance, Junction to Ambient Rea 30 30 C/W Maximum Lead Temperature for Soldering Purposes: 4% from Case for 5 Seconds TL 260 260 C (1) Repetitive Rating: Pulse width limited by max. junction temperature. 139electrical characteristics (Tc = 25C) (unless otherwise specified) | CHARACTERISTIC | SYMBOL | MIN | TYP | MAX | UNIT | off characteristics Drain-Source Breakdown Voltage IRF232 BVpss 200 _ _ Volts (Vas = OV, Ip = 250 wA) IRF233 150 _ - Zero Gate Voltage Drain Current loss (Vps = Max Rating, Vas = OV, Tc = 25C) _ _ 250 LA (Vpg = Max Rating, x 0.8, Vgg = OV, To = 125C) _ 1000 Gate-Source Leakage Current (Vas = 20V) lass +100 nA on characteristics Gate Threshold Voltage To = 25C | VasctH) 2.0 _ 4.0 Volts (Vps = Ves; Ip = 250 pA) On-State Drain Current i 8.0 _ A (Vgg = 10V, Vpg = 10V) D(ON) Static Drain-Source On-State Resistance _ (Vgg = 10V, Ip = 5.0A) Rps(on) 0.4 0.6 Ohms Forward Transconductance (Vpg = 10V, Ip = 5.0A) Gis 2.4 3.0 _ mhos dynamic characteristics Input Capacitance Vas = OV Ciss _ 650 800 pF Output Capacitance Vos = 25V Coss _ 150 450 pF Reverse Transfer Capacitance f=1 MHz Crss _ 30 150 pF switching characteristics* Turn-on Delay Time Vos = 90V ta(on) _ 15 _ ns Rise Time Ip = 5.0A, Vas = 15V tr _ 25 _ ns Turn-off Delay Time Roen = 500, Reg = 12.59. ta(off) _ 30 _ ns Fail Time (Ras (equiv.) = 100) tt _ 20 ns source-drain diode ratings and characteristics* Continuous Source Current Is _ _ 8.0 A Pulsed Source Current Ism _ _ 32 A Diode Forward Voltage Vsp _ 1.0 18 Volts (Te = 25C, Vas = OV, Is = 8.0A) Reverse Recovery Time trr 300 _ ns (Ig = 9.0A, dig/dt = 100A/usec, To = 125C) Qrr _ 2.5 pc Pulse Test: Pulse width < 300 ys, duty cycle = 2% 100 80 2b o rN) o Doo S ny IN TH Y LIMITED BY Ip. BRAIN CURRENT (AMPERES) 9g oo> AMO 92 1 2 4 6 810 20 40 6080100 200 400 600 1000 Vps. DRAINSOURCE VOLTAGE (VOLTS) MAXIMUM SAFE OPERATING AREA 140 CONDITIONS: Ros(on) CONDITIONS: Ip = 5.0 A, Vgg = 10V VesctH) CONDITIONS: Ip = 250nA, Vos = Vag GS(TH) Rosion) AND VagirHy NORMALIZED -40 Q 40 80 120 160 T,, JUNCTION TEMPERATURE (C) TYPICAL NORMALIZED Rygion; AND Vesirn VS- TEMP.