© 2008 IXYS CORPORATION, All rights reserved DS99889A (04/08)
VDSS = 1200V
ID25 = 20A
RDS(on) ≤≤
≤≤
≤ 570mΩΩ
ΩΩ
Ω
trr ≤≤
≤≤
≤ 300ns
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 150°C 1200 V
VDGR TJ= 25°C to 150°C, RGS = 1MΩ1200 V
VGSS Continuous ± 30 V
VGSM Transient ± 40 V
ID25 TC= 25°C20A
IDM TC= 25°C, pulse width limited by TJM 50 A
IATC= 25°C10A
EAS TC= 25°C1J
dV/dt IS≤ IDM, VDD ≤ VDSS,T
J ≤ 150°C 20 V/ns
PDTC= 25°C 595 W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
TL1.6mm (0.062 in.) from case for 10s 300 °C
VISOL 50/60 Hz, RMS t = 1min 2500 V~
IISOL ≤ 1mA t = 1s 3000 V~
MdMounting torque 1.5/13 Nm/lb.in.
Terminal connection torque 1.3/11.5 Nm/lb.in.
Weight 30 g
IXFN20N120P
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified) Min. Typ. Max.
BVDSS VGS = 0V, ID = 1mA 1200 V
VGS(th) VDS = VGS, ID = 1mA 3.5 6.5 V
IGSS VGS = ± 30V, VDS = 0V ± 200 nA
IDSS VDS = VDSS 25 μA
VGS = 0V TJ = 125°C 5 mA
RDS(on) VGS = 10V, ID = 10A, Note 1 570 mΩ
G
D
S
S
miniBLOC, SOT-227 B (IXFN)
E153432
G = Gate D = Drain
S = Source
Either Source terminal S can be used as the
Source terminal or the Kelvin Source (gate
return) terminal.
Features
•International standard package
•Encapsulating epoxy meets
UL 94 V-0, flammability classification
•miniBLOC with Aluminium nitride
isolation
•Fast recovery diode
•Unclamped Inductive Switching (UIS)
rated
•Low package inductance
- easy to drive and to protect
Advantages
•Easy to mount
•Space savings
•High power density
PolarTM Power MOSFET
HiPerFETTM
Applications:
zHigh Voltage Switched-mode and
resonant-mode power supplies
zHigh Voltage Pulse Power Applications
zHigh Voltage Discharge circuits in
Lasers Pulsers, Spark Igniters, RF
Generators
zHigh Voltage DC-DC converters
zHigh Voltage DC-AC inverters
IXYS reserves the right to change limits, test conditions, and dimensions.
IXFN20N120P
Symbol Test Conditions Characteristic Values
(TJ = 25°C unless otherwise specified) Min. Typ. Max.
gfs VDS = 20V, ID = 10A, Note 1 10 16 S
Ciss 11.1 nF
Coss VGS = 0V, VDS = 25V, f = 1MHz 600 pF
Crss 60 pF
RGi Gate input resistance 1.60 Ω
td(on) Resistive Switching Times 49 ns
trVGS = 10V, VDS = 0.5 • VDSS, ID = 10A 45 ns
td(off) RG= 1Ω (External) 72 ns
tf 70 ns
Qg(on) 193 nC
Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 10A 74 nC
Qgd 85 nC
RthJC 0.21 °C/W
RthCS 0.05 °C/W
Source-Drain Diode Characteristic Values
TJ = 25°C unless otherwise specified) Min. Typ. Max.
ISVGS = 0V 20 A
ISM Repetitive, pulse width limited by TJM 80 A
VSD IF = IS, VGS = 0V, Note 1 1.5 V
trr 300 ns
QRM 0.84 μC
IRM 9 A
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
IF = 10A, -di/dt = 100A/μs
VR = 100V
SOT-227B Outline
© 2008 IXYS CORPORATION, All rights reserved
IXFN20N120P
Fi g . 6 . Maximu m Dr ai n C urr en t vs.
Cas e Temp er at u r e
0
2
4
6
8
10
12
14
16
18
20
22
-50 -25 0 25 50 75 100 125 150
T
C
- Degrees Cent i grade
I
D
- A mp ere s
Fi g. 1. Ou tp u t Char acter i sti c s
@ 25ºC
0
2
4
6
8
10
12
14
16
18
20
024681012
V
DS
- Volts
I
D
- A mpe re s
V
GS
= 10V
9V
7
V
8
V
Fig. 2. Extended Output Characteristics
@ 25ºC
0
5
10
15
20
25
30
35
40
0 5 10 15 20 25 30
V
DS
- Volts
I
D
- A mpe re s
V
GS
= 10V
9V
7
V
8
V
Fig. 3. Output Characteristics
@ 125ºC
0
2
4
6
8
10
12
14
16
18
20
0 2 4 6 8 101214161820222426
V
DS
- Volts
I
D
- Am peres
V
GS
= 10V
8V
7V
6V
Fig. 4. RDS(on) Normalized to ID = 10A Val u e
vs. Ju nction T emp er atu r e
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Cent ig ra de
R
DS(on)
- N ormalize d
V
GS
= 10V
I
D
= 20A
I
D
= 10A
Fig. 5. RDS(on) Normalized to ID = 10A Value
vs. Dr ai n Cu r ren t
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
0 5 10 15 20 25 30 35 40
I
D
- Amperes
R
DS(on)
- N ormalize d
V
GS
= 10V T
J
= 125ºC
T
J
= 25ºC
IXYS reserves the right to change limits, test conditions, and dimensions.
IXFN20N120P
IXYS REF: F_20N120P(86) 04-03-08-B
Fi g . 12. Maximum Tr an si en t Ther mal
Impedance
0.001
0.010
0.100
1.000
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- ºC / W
Fig. 7. Input Adm ittance
0
5
10
15
20
25
30
35
5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0
V
GS
- Vo lts
I
D
- A mpe res
T
J
= 125ºC
25ºC
- 40ºC
Fig. 8. Transconductance
0
5
10
15
20
25
30
35
0 5 10 15 20 25 30 35
I
D
- Amperes
g
f s
- Siem ens
T
J
= - 40ºC
125ºC
25ºC
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
0
10
20
30
40
50
60
0.30.40.50.60.70.80.91.01.11.21.3
V
SD
- Volts
I
S
- A mpe res
T
J
= 125ºC
T
J
= 25ºC
Fig. 10. Gate Charge
0
2
4
6
8
10
12
14
16
0 40 80 120 160 200 240 280
Q
G
- NanoCoulombs
V
GS
- V o lts
V
DS
= 600V
I
D
= 10A
I
G
= 10mA
Fig. 11. Capacitance
10
100
1,000
10,000
100,000
0 5 10 15 20 25 30 35 40
V
DS
- Vo lts
Capacitance - P icoFarads
f
= 1 MHz
Ciss
Crss
Coss
