January 2004
2004 Fairchild Semiconductor Corporation FDB6021P Rev D(W)
FDB6021P
20V P-Channel 1.8V Specified PowerTrench MOSFET
General Description
This P-Channel power MOSFET uses Fairchild’s low
voltage PowerTrench process. It has been optimized for
power management applications.
Applications
• Battery management
• Load switch
• Voltage regulator
Features
• –28 A, –20 V. RDS(ON) = 30 mΩ @ VGS = 4.5 V
RDS(ON) = 40 mΩ @ VGS = 2.5 V
RDS(ON) = 65 mΩ @ VGS = 1.8 V
• Critical DC electrical parameters specified at
elevated temperature
• High performance trench technology for extremely
low RDS(ON)
• 175°C maximum junction temperature rating
D
G
STO-263AB
FDB Series
S
G
D
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol Parameter Ratings Units
VDSS Drain-Source Voltage –20 V
VGSS Gate-Source Voltage ± 8 V
ID Drain Current – Continuous (Note 1) –28 A
– Pulsed (Note 1) –80
PD Total Power Dissipation @ TC = 25°C 37 W
Derate above 25°C 0.25 W°C
TJ, TSTG Operating and Storage Junction Temperature Range –65 to +175 °C
Thermal Characteristics
RθJC Thermal Resistance, Junction-to-Case 4 °C/W
RθJA Thermal Resistance, Junction-to-Ambient 62.5 °C/W
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
FDB6021P FDB6021P 13” 24mm 800 units
FDB6021P
FDB6021P Rev. D(W)
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = –250 µA –20 V
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient
ID = –250 µA,Referenced to 25°C –16
mV/°C
IDSS Zero Gate Voltage Drain Current VDS = –16 V, VGS = 0 V –1 µA
IGSSF Gate–Body Leakage, Forward VGS = 8 V, VDS = 0 V 100 nA
IGSSR Gate–Body Leakage, Reverse VGS = –8 V VDS = 0 V –100 nA
On Characteristics (Note 2)
VGS(th) Gate Threshold Voltage VDS = VGS, ID = –250 µA –0.4 –0.7 –1.5 V
∆VGS(th)
∆TJ
Gate Threshold Voltage
Temperature Coefficient
ID = –250 µA,Referenced to 25°C
3
mV/°C
RDS(on) Static Drain–Source
On–Resistance
VGS = –4.5 V, ID = –14 A
VGS = –2.5 V, ID = –12 A
VGS = –1.8 V, ID = –10 A
VGS= –4.5V, ID = –14 A, TJ=125°C
24
31
50
30
30
40
65
42
mΩ
ID(on) On–State Drain Current VGS = –4.5 V, VDS = –5 V –40 A
gFS Forward Transconductance VDS = –5 V, ID = –14 A 33 S
Dynamic Characteristics
Ciss Input Capacitance 1890 pF
Coss Output Capacitance 302 pF
Crss Reverse Transfer Capacitance
VDS = –10 V, V GS = 0 V,
f = 1.0 MHz
124 pF
Switching Characteristics (Note 2)
td(on) Turn–On Delay Time 13 23 ns
tr Turn–On Rise Time 10 20 ns
td(off) Turn–Off Delay Time 80 128 ns
tf Turn–Off Fall Time
VDD = –10 V, ID = –1 A,
VGS = –4.5 V, RGEN = 6 Ω
50 80 ns
Qg Total Gate Charge 20 28 nC
Qgs Gate–Source Charge 4 nC
Qgd Gate–Drain Charge
VDS = –10 V, ID = –14 A,
VGS = –4.5 V
7 nC
Drain–Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain–Source Diode Forward Current –28 A
VSD Drain–Source Diode Forward
Voltage
VGS = 0 V, IS = –14 A –0.9 –1.3 V
Notes:
1. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
2. Calculated continuous current based on maximum allowable junction temperature. Actual maximum continuous current limited by package constraints to 75A
FDB6021P
FDB6021P Rev. D(W)
Typical Characteristics
0
10
20
30
40
012345
-VDS, DRAIN-SOURCE VOLTAGE (V)
-ID, DRAIN CURRENT (A)
-1.5V
-2.5V
-3.0V
-3.5V
VGS = -4.5V
-2.0V
-1.8V
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
0 10203040
-ID, DRAIN CURRENT (A)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
VGS = -1.8V
-2.0V
-4.5V
-3.0V
-2.5V
-3.5V
Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.7
0.8
0.9
1
1.1
1.2
1.3
1.4
1.5
-50 -25 0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (oC)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
ID = -14A
VGS = -4.5V
0.01
0.03
0.05
0.07
0.09
12345
-VGS, GATE TO SOURCE VOLTAGE (V)
RDS(ON), ON-RESISTANCE (OHM)
ID = -7A
TA = 125oC
TA = 25oC
Figure 3. On-Resistance Variation
withTemperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
0
5
10
15
20
25
30
0.511.522.5
-VGS, GATE TO SOURCE VOLTAGE (V)
-ID, DRAIN CURRENT (A)
TA = -55oC25oC
125oC
VDS = -5V
0.0001
0.001
0.01
0.1
1
10
100
0 0.2 0.4 0.6 0.8 1 1.2
-VSD, BODY DIODE FORWARD VOLTAGE (V)
-IS, REVERSE DRAIN CURRENT (A)
TA = 125oC
25oC
-55oC
VGS = 0V
Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDB6021P
FDB6021P Rev. D(W)
Typical Characteristics
0
1
2
3
4
5
0 5 10 15 20 25
Qg, GATE CHARGE (nC)
-VGS, GATE-SOURCE VOLTAGE (V)
ID =-14A VDS = -5V
-15V
-10V
0
500
1000
1500
2000
2500
3000
0 5 10 15 20
-VDS, DRAIN TO SOURCE VOLTAGE (V)
CAPACITANCE (pF)
CISS
CRSS
COSS
f = 1MHz
VGS = 0 V
Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.
1
10
100
1 10 100
-VDS, DRAIN-SOURCE VOLTAGE (V)
-ID, DRAIN CURRENT (A)
DC
1s
100ms
RDS(ON) LIMIT
VGS = -4.5V
SINGLE PULSE
RθJC = 4oC/W
TA = 25oC
10ms
1ms
100µs
0
200
400
600
800
1000
0.0001 0.001 0.01 0.1 1 10 100 1000
t1, TIME (sec)
P(pk), PEAK TRANSIENT POWER (W)
SINGLE PULSE
RθJC = 4°C/W
TA = 25°C
Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum
Power Dissipation.
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10 100 1000
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
RθJA(t) = r(t) + RθJA
RθJC = 4 °C/W
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
P(pk)
t1
t2
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
D = 0.5
Figure 11. Transient Thermal Response Curve.
FDB6021P
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY
ARISING OUT OF THE APPLICA TION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT
CONVEY ANY LICENSE UNDER ITS P ATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT ST A TUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
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In Design
First Production
Full Production
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