inters;| Data Sheet 4A, 400V - 600V Hyperfast Diodes The RHRD440, RHRD460, RHRD440S and RHRD4608S are hyperfast diodes with soft recovery characteristics (try < 30ns). They have half the recovery time of ultrafast RHRD440, RHRD460, RHRD440S, RHRD460S File Number 3613.5 January 2000 Features * Hyperfast with Soft Recovery.................. <30ns * Operating Temperature................-..004- 175C diodes and are of silicon nitride passivated ion-implanted * Reverse Voltage Upto..................0.000. 600V epitaxial planar construction. * Avalanche Energy Rated These devices are intended for use as freewheeling/ * Planar Construction clamping diodes and rectifiers in a variety of switching power supplies and other power switching applications. Their low Applications stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits, * Switching Power Supplies reducing power loss in the switching transistors. * Power Switching Circuits Formerly developmental type TA49055. * General Purpose Ordering Information Packaging PART NUMBER PACKAGE BRAND JEDEC STYLE TO-251 RHRD440 TO-251 RHR440 ANODE RHRD460 TO-251 RHR460 CATHODE RHRD440S TO-252 RHR440 CATHODE RHRD460S TO-252 RHR460 (FLANGE) NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-252AA variant in the tape and reel, i.e., RHRD46089A. JEDEC STYLE TO-252 Symbol K CATHODE Se (FLANGE) A CATHODE A ANODE Absolute Maximum Ratings T = 25C, Unless Otherwise Specitied RHRD440, RHRD460, RHRD440S RHRD460S UNITS Peak Repetitive Reverse Voltage... 0.0... eee VRRM 400 600 Vv Working Peak Reverse Voltage... 6... cee VRwm 400 600 Vv DC Blocking Voltage .. 0... tenes VR 400 600 Vv Average Rectified Forward Current... 0.0.0... eee IF(AV) 4 4 A (Tc = 157C) Repetitive Peak Surge Current... 0.0.2. eee lFRM 8 8 A (Square Wave, 20kHz) Nonrepetitive Peak Surge Current... 20.0... 0. eee ee lFsm 40 40 A (Halfwave, 1 Phase, 60Hz) Maximum Power Dissipation .. 0.0.0.0... 0000 eee eee Pp 50 50 WwW Avalanche Energy (See Figures 10 and 11)... ee Eave 10 10 mJ Operating and Storage Temperature... 0. ee Tsta:. Ty = -65 to 175 -65 to 175 C Maximum Lead Temperature for Soldering (Leads at 0.063 in. (1.6mm) from case for 10s)........ 2.000.000 eee TL 300 300 C Package Body for 10s, see Tech Brief 334.........0 00.00. ee TPKG 260 260 C 4-888-INTERSIL or 321-724-7143 | Copyright Intersil Corporation 2000RHRD440, RHRD460, RHRD440S, RHRD460S Electrical Specifications Tc. = 25C, Unless Otherwise Specitied RHRD440, RHRD440S RHRD460, RHRD460S SYMBOL TEST CONDITION MIN TYP MAX MIN TYP MAX UNITS Ve Ip=4A - - 2.4 - - 2.1 Vv Ip = 4A, Tc = 150C - - 1.7 - - 1.7 V IR Vp = 400V - - 100 - - - pA Vp = 600V - - - - - 100 pA VR = 400V, Tc = 150C - - 500 - - - pA Vp = 600V, Tc = 150C - - - - - 500 pA ter lp = 1A, di/dt = 200A/s - - 30 - - 30 ns lp = 4A, di/dt = 200A/us - - 35 - - 35 ns ta lp = 4A, di/dt = 200A/us - 16 - - 16 - ns th lp = 4A, di/dt = 200A/us - 7 - - 7 - ns Qrr Ip = 4A, dif/dt = 200A/us - 45 - - 45 - nc Cy Vp = 10V, Ip =0A - 15 - - 15 - pF Rec - - 3 - - 3 c/w DEFINITIONS Vf = Instantaneous forward voltage (pw = 300us, D = 2%). IR = Instantaneous reverse current. try = Reverse recovery time (See Figure 9), summation of tg + tp. tg = Time to reach peak reverse current (See Figure 9). ty = Time from peak Ipiy to projected zero crossing of IRjy based on a straight line from peak Ippy through 25% of IRiy (See Figure 9). Qrr = Reverse recovery charge. Cy = Junction Capacitance. ReJc = Thermal resistance junction to case. pw = Pulse width. D = Duty cycle. Typical Performance Curves 20 Ip, FORWARD CURRENT (A) 3 = 0.5 0 0.5 1 1.5 2 2.5 3 Vr, FORWARD VOLTAGE (V) FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE IR, REVERSE CURRENT (1A) 500 100 0.1 0.01 0.001 0 100 200 300 400 Vr, REVERSE VOLTAGE (V) 500 600 FIGURE 2. REVERSE CURRENT vs REVERSE VOLTAGE 2 intersilRHRD440, RHRD460, RHRD440S, RHRD460S Typical Performance Curves (continued) 30 Te = 25C, dip/dt = 200A/us Tc = 100C, dip/dt = 200A/us 25 _ " 20 ter 0 ter ke Lseneenenneny paseo > fe 15 ta fe gee > 8 8 a 10 tt = th a 5 a 1 4 0.5 1 4 Ir, FORWARD CURRENT (A) Ir, FORWARD CURRENT (A) FIGURE 3. t,,, tg AND th CURVES vs FORWARD CURRENT FIGURE 4. t,, tg AND tp CURVES vs FORWARD CURRENT zs To = 175C, dip/dt = 200A/us 5 WwW 4 G ter x =< NN a o Pe Dc d g 3 we r z SQ. WAVE rf 2 q > 2 SX te i z 1 z +o 05 1 4 145 150 155 160 165 170 175 Ir, FORWARD CURRENT (A) Tc , CASE TEMPERATURE (C) FIGURE 5. t;, tg AND th CURVES vs FORWARD CURRENT FIGURE 6. CURRENT DERATING CURVE 50 & oO a FE Oo 30 3 to _ FIGURE 8. ty; TEST CIRCUIT Imax = 14 L=20mH R<0.102 2 Eave = 1/2LI [VR(aviy(VR(AVL) - Vbp) Q1 =IGBT (BVcgEs > DUT VRjavLy) L R CURRENT 4 SENSE Vpp JL it A Vpp ~ DUT FIGURE 10. AVALANCHE ENERGY TEST CIRCUIT dif FIGURE 9. ty; WAVEFORMS AND DEFINITIONS VAVL FIGURE 11. AVALANCHE CURRENT AND VOLTAGE WAVEFORMS All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with- out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site www.intersil.com 4 intersil