ISAMSUNG SEMICONDUCTOR INC MMBT4126 PNP.EPITAXIAL SILICON TRANSISTOR T-29- !9 t AME D Bf eaeuise 0007268 0 | GENERAL PURPOSE TAANSISTOR ABSOLUTE MAXIMUM RATINGS (T, =25C) Characteristic Symbol | Rating | Unit Coliector-Base Voltage Vcao 25 v Collector-Emitter Voitage Veco 25 v Emitter-Base Voltage Vepo -4 Mv Collector Current Ik 200 mA Collector Dissipation Pe 350 7 mw Storage Temperature Tstg 150 |. C Thermal Resistance Junction to Ambient Rth(-a) 357 | C/W ELECTRICAL CHARACTERISTICS (T,=25C) SOT-23 1. Base 2. Emitter 3, Collector Characteristic Symbol Test Condition Min Max Unit Collector-Base Breakdwn Voltage BV ceo =-10pA, le=0 -25 | Vv *Collector-Emitter Breakdown Voltage | BVceo lk=-1mA, le=0 -25 Vv. Emitter-Base Breakdown Voltage BV eso k=10pA, lb=0 4 Collector Cutoff Current Icso Ves= 20V, le=O 50 nA Emitter Cutoff Current teso Vee=3V, bo=0 50 nA DC Current Gain Hee Vee=1V, le= -2mA 120 360 Vce=1V, Ic=50mA 60 *Collector-Emitter Saturation Voltage Vce (sat) b=50mMA, la=5mA -0.4 Vv * Base-Emitter Saturation Voltage Var (sat) Ic=--50MA, la= SMA -0.95 Vv Current Gain-Bandwidth Product fr Vee= 20V, Io=-10mA, f=100MHz 250 MHz Collector Input Capacitance Cib Vee= 0.5V, Ie=0, f=1MHz 10 pF Collector-Base Capacitance Ccb Ves=--5V, fe=0, f= 1MHz - 4.5 pF Noise Figure NF Vce= SV, tce=100KA, Rs=1kQ 4 dB Noise Bandwidth= 10Hz to 15.7KHz * Pulse Test: PWS300us, Duty Cycle<2% x. Marking . Fy C3 XS 38