MOTOROLA 2 SEMICONDUCTOR Saas TECHNICAL DATA The RF Line MRF1500 Microwave Pulse sactorota Prefered Device Power Transistor Designed for 1025-1150 MHz pulse common base amplifier applications 500 W (PEAK), 1025-1150 MHz Such as DME. MICROWAVE POWER e Guaranteed Performance @ 1090 MHz TRANSISTOR Output Power = 500 Watts Peak NPN SILICON Gain = 5,2 dB Min e 100% Tested for Load Mismatch at All Phase Angles with 10:1 VSWR e Hermetically Sealed Industry Package e Silicon Nitride Passivated * Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal Migration Internal input Matching Characterized with 10 ps, 1.0% Duty Cycle Pulses CASE 355E, STYLE 1 MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCES 65 Vde Coilector-Base Voltage VcBo 65 Vde Emitter-Base Voltage VEBO 3.5 Vde Collector Current Peak (1) Io 36 Adc Total Device Dissipation @ Tc = 25C (1), (2) Pp 1780 Watts Derate above 25C 10 werc Storage Temperature Range Tstg 65 to +200 bs 07 Junction Temperature Ty 200 C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Case (3) Rec 0.1 CW NOTES: 1. Under pulse RF operating conditions. 2. These devices are designed for RF operation. The total device dissipation rating applies only when the devices are operated as pulsed RF amplifiers. 3. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques. (Worst case yc value measured @32 us, 2.0%) Preferred devices are Motorola recommended choices for future use and best overall value. MRF1500 MOTOROLA RF DEVICE DATA 2-590ELECTRICAL CHARACTERISTICS (Tc = 25C unless otherwise noted.) Characteristic | Symbol | Min Typ Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (Ic = 60 mAdc, Vee = 0) ViBRICES 70 _ _ Vde Coliector-Base Breakdown Voltage (Ic = 60 mAdc, IE = 0) V(BR)CBO 70 _ _ Vde Emitter-Base Breakdown Voltage (IE = 10 mAdc, Ic = 0) V(BR)IEBO 4.0 _ _ Vdc Collector Cutoff Current (Vop = 50 Vdc, IE = 0) IoBo _ 40 mAdc ON CHARACTERISTICS DC Current Gain (Ic = 5.0 Adc, Vog = 5.0 Vdc) hre 20 40 _ _ FUNCTIONAL TESTS Common-Base Amplifier Power Gain Gpa 5.2 _ _ dB (Voc = 50 Vde, Pout = 500 W Peak, f = 1090 MHz) Collector Efficiency n 37 _ % (Vcc = 50 Vde, Poyt = 500 W Peak, f = 1090 MHz) Load Mismatch v No Degradation in Output Power (Voc = 50 Vdc, Pout = 500 W Peak, f = 1090 MHz, Load VSWR = 10:1 All Phase Angles) + Lo + + C27 CAR C4 CAR RF INPUT za Lz | 26 C1 82 pF 100 mil Chip Capacitor == C2 82 pF 100 mill Chip Capacitor C3 0.1 uF C4 10 pF 100 V, Electrolytic C5 1000 pF 60 V, Electrolytic 28 RF OUTPUT zi4 Lf) L1 3 Turns, #18 AWG, 1/8 ID, 0.18 Long Z1-Z14 Microstrip, See Details Below Board Material Teflon-Glass Laminate, Dielectric Thickness = .020, ; = 2.55, 2 oz. Copper 332 182 al I 9 141 ee 50 464 1.576 arr 1.598 >| jx 630 | Figure 1. Test Circuit MOTOROLA RF DEVICE DATA MRF1500 2-591TYPICAL CHARACTERISTICS Pout, OUTPUT POWER (WATTS) Voc =50V PULSE = 10ps, 1% DF FREQ = 1090 MHz 2 #40 60 80 100 120 140 160 180 200 Py, INPUT POWER (WATTS) Figure 2. Output Power versus Input Power SD ~< 3 SA J f ZiN MHz OHMS Zou" 1025 1.6 +j3.9 1.6+j1.7 A : Zo" is the conjugate of the optimum {oad 1050 2.0 + 4.0 16 +j16 imped into which the device operates at a 1090 2.8 + j4.0 1.54j1.1 given output power voltage and frequency. 1125 3.9 + j3.8 1.5+)j1.4 1150 4.6 + j3.0 1.44 j1.6 Figure 3. Series Equivalent Input/Output impedances MRF1500 MOTOROLA RF DEVICE DATA 2-592