SEMICONDUCTOR KDR377E TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE LOW VOLTAGE HIGH SPEED SWITCHING. FEATURES MAXIMUM RATING (Ta=25 CHARACTERISTIC 1 A Small Package : ESC. E C B CATHODE MARK Low Forward Voltage : VF(2)=0.43V (Typ.) 2 ) D SYMBOL RATING UNIT VRM 40 V Reverse Voltage VR 40 V Maximum (Peak) Forward Current IFM 150 mA Average Forward Current IO 30 mA IFSM 200 mA Power Dissipation PD 150* mW Junction Temperature Tj 125 Tstg -55 125 Maximum (Peak) Reverse Voltage Surge Current (10ms) Storage Temperature Range F DIM A B C D E F 1. ANODE 2. CATHODE MILLIMETERS _ 0.10 1.60 + _ 0.10 1.20 + _ 0.10 0.80 + _ 0.05 0.30 + _ 0.10 0.60 + _ 0.05 0.13 + ESC * : Mounted on a glass epoxy circuit board of 20 20mm, pad dimension of 4 4mm. Marking Type Name UV ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT VF(1) IF=1mA - 0.29 0.37 VF(2) IF=30mA - 0.43 0.55 Reverse Current IR VR=40V - - 20 A Total Capacitance CT VR=1V, f=1MHz - 6.0 - pF Forward Voltage 2003. 6. 13 Revision No : 3 V 1/2 KDR377E IF 10 10 10 10 I R - VR 6 Ta=25 C REVERSE CURRENT I R (nA) FORWARD CURRENT I F (uA) 10 - VF 5 4 3 2 10 1 0 0.2 0.4 0.6 0.8 FORWARD VOLTAGE VF (V) 10 3 10 2 10 Ta=25 C 0 10 20 30 40 50 60 REVERSE VOLTAGE VR (V) TERMINAL CAPACITANCE C T (pF) C T - VR 50 Ta=25 C f=1MHz 30 10 5 3 1 0 10 20 30 40 REVERSE VOLTAGE VR (V) 2003. 6. 13 Revision No : 3 2/2