2003. 6. 13 1/2
SEMICONDUCTOR
TECHNICAL DATA
KDR377E
SCHOTTKY BARRIER TYPE DIODE
Revision No : 3
LOW VOLTAGE HIGH SPEED SWITCHING.
FEATURES
Low Forward Voltage : VF(2)=0.43V (Typ.)
Small Package : ESC.
MAXIMUM RATING (Ta=25 )
ESC
DIM MILLIMETERS
A
B
C
D
E
1.60 0.10
1.20 0.10
0.80 0.10
0.30 0.05
0.60 0.10
CATHODE MARK
D
C
B
A
1
2
E
1. ANODE
2. CATHODE
F
0.13 0.05F
+
_
+
_
+
_
+
_
+
_
+
_
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT
Maximum (Peak) Reverse Voltage VRM 40 V
Reverse Voltage VR40 V
Maximum (Peak) Forward Current IFM 150 mA
Average Forward Current IO30 mA
Surge Current (10ms) IFSM 200 mA
Power Dissipation PD150* mW
Junction Temperature Tj 125
Storage Temperature Range Tstg -55 125
* : Mounted on a glass epoxy circuit board of 20 20mm,
pad dimension of 4 4mm.
Type Name
Marking
VU
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Forward Voltage
VF(1) IF=1mA - 0.29 0.37
V
VF(2) IF=30mA - 0.43 0.55
Reverse Current IRVR=40V - - 20 A
Total Capacitance CTVR=1V, f=1MHz - 6.0 - pF
2003. 6. 13 2/2
KDR377E
Revision No : 3
REVERSE VOLTAGE V (V)
R
C - V
T
TERMINAL CAPACITANCE C (pF)
TR
0
1
3
5
10
30
50
Ta=25 C
I - V
F F
F
FORWARD VOLTAGE V (V)
0
10
F
FORWARD CURRENT I (uA)
0.2
2
Ta=25 C
0.4 0.6 0.8
1
10
10 3
10 4
10 5
10 6
I - V
R
REVERSE VOLTAGE V (V)
010
R
REVERSE CURRENT I (nA)
RR
10
2
10
3
10
20 30 40 50 60
10 20 30 40
Ta=25 C
f=1MHz
