© 1999, 2001
MOS FIELD EFFECT TRANSISTOR
2SK3433
SWITCHING
N-CHANNEL POWER MOS FET
DATA SHEET
Document No. D14602EJ4V0DS00 (4th edition)
Date Published July 2002 NS CP(K)
Printed in Japan
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
DESCRIPTION
The 2SK3433 is N-channel MOS Field Effect Transistor
designed for high current switching applications.
FEATURES
•Super low on-state resistance:
RDS(on)1 = 26 mΩ MAX. (VGS = 10 V, ID = 20 A)
RDS(on)2 = 41 mΩ MAX. (VGS = 4.0 V, ID = 20 A)
•Low Ciss: Ciss = 1500 pF TYP.
•Built-in gate protection diode
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V) VDSS 60 V
Gate to Source Voltage (VDS = 0 V) VGSS ±20 V
Drain Current (DC) (TC = 25°C) ID(DC) ±40 A
Drain Current (pulse) Note1 ID(pulse) ±80 A
Total Power Dissipation (TC = 25°C) PT47 W
Total Power Dissipation (TA = 25°C) PT1.5 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg −55 to +150 °C
Single Avalanche Current Note2 IAS 21 A
Single Avalanche Energy Note2 EAS 44 mJ
Notes 1. PW ≤ 10
µ
s, Duty cycle ≤ 1%
2. Starting Tch = 25°C, VDD = 30 V, RG = 25 Ω, VGS = 20 → 0 V
(TO-220AB)
(TO-262)
(TO-263, TO-220SMD)
The mark ★ shows major revised points.
ORDERING INFORMATION
PART NUMBER PACKAGE
2SK3433 TO-220AB
2SK3433-S TO-262
2SK3433-ZJ TO-263
2SK3433-Z TO-220SMDNote
Note TO-220SMD package is produced only
in Japan.
Data Sheet D14602EJ4V0DS
2
2SK3433
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTE RISTI CS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Zero Gate Volt age Drai n Current IDSS VDS = 60 V, VGS = 0 V 10
µ
A
Gate Leakage Current IGSS VGS = ±20 V, VDS = 0 V ±10
µ
A
Gate Cut-off Voltage VGS(off) VDS = 10 V, ID = 1 mA 1.5 2.0 2.5 V
Forward Transfer Adm i t tance | yfs |V
DS = 10 V, ID = 20 A 11 22 S
Drain to Sourc e On-state Res i stance RDS(on)1 VGS = 10 V, I D = 20 A 22 26 mΩ
RDS(on)2 VGS = 4.0 V, ID = 20 A 29 41 mΩ
Input Capac i t ance Ciss VDS = 10 V 1500 pF
Output Capaci tance Coss VGS = 0 V 250 pF
Reverse Transf er Capacitanc e Crss f = 1 MHz 120 pF
Turn-on Delay Time td(on) VDD = 30 V, I D = 20 A 35 ns
Rise Ti me trVGS = 10 V 320 ns
Turn-off Del a y T i me td(off) RG = 10 Ω89 ns
Fall Time tf120 ns
Total Gate Charge QGVDD = 48 V 30 nC
Gate to Source Charge QGS VGS = 10 V 5 nC
Gate to Drain Charge QGD ID = 40 A 8 nC
Body Diode Forward Voltage VF(S-D) IF = 40 A, VGS = 0 V 1.0 V
Reverse Recovery T i me trr IF = 40 A, VGS = 0 V 44 ns
Reverse Recovery Charge Qrr di/dt = 100 A/
µ
s60nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
RG = 25 Ω
50 Ω
PG.
L
VDD
VGS = 20 → 0 V
BVDSS
IAS
IDVDS
Starting T
ch
V
DD
D.U.T.
TEST CIRCUIT 3 GATE CHARGE
TEST CIRCUIT 2 SWITCHING TIME
PG. R
G
0
V
GS
D.U.T.
R
L
V
DD
τ = 1
s
µ
Duty Cycle ≤ 1%
V
GS
Wave Form
I
D
Wave Form
V
GS
10% 90%
V
GS
10%
0
I
D
90%
90%
t
d(on)
t
r
t
d(off)
t
f
10%
τ
I
D
0
t
on
t
off
PG. 50 Ω
D.U.T.
R
L
V
DD
I
G
= 2 mA
Data Sheet D14602EJ4V0DS 3
2SK3433
TYPICAL CHARACTERISTICS (TA = 25°C )
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
T
ch
- Channel Temperature -
˚C
dT - Percentage of Rated Power - %
04020 60 100 14080 120 160
100
80
60
40
20
0
P
T
- Total Power Dissipation - W
008020 40 60 100 140120 160
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
T
C
- Case Temperature - ˚C
10
20
30
40
50
70
60
FORWARD BIAS SAFE OPERATING AREA
I
D
- Drain Current - A
V
DS
- Drain to Source Voltage - V
1
0.1
10
100
1000
1 10 100
T
C
= 25˚C
Single Pulse
0.1
I
D(pulse)
PW = 10 µs
100 µs
1 ms
DC
R
DS(on)
Limited
(at V
GS
= 10 V)
I
D(DC)
Power Dissipation
Limited
10 ms
PW - Pulse Width - s
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
r
th(t)
- Transient Thermal Resistance - ˚C/W
10
0.01
0.1
1
100
1000
1 m 10 m 100 m 1 10 100 1000
Single Pulse
10 100
R
th(ch-C)
= 2.66˚C/W
µµ
R
th(ch-A)
= 83.3˚C/W
Data Sheet D14602EJ4V0DS
4
2SK3433
FORWARD TRANSFER CHARACTERISTICS
V
GS
- Gate to Source Voltage - V
I
D
- Drain Current - A
Pulsed
123456
V
DS
= 10 V
10
1
0.1
100
1000
T
A
= −40˚C
25˚C
75˚C
150˚C
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
V
DS
- Drain to Source Voltage - V
I
D
- Drain Current - A
02.0 3.0 4.0
40
100
80
60
1.0 Pulsed
V
GS
=10 V
20 4.0 V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
I
D
- Drain Current - A
| y
fs
| - Forward Transfer Admittance - S
0.01 0.1 1
10
100
10 100
0.1
0.01
1
Pulsed
T
A
= 150˚C
75˚C
25˚C
−40˚C
V
DS
= 10 V
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
V
GS
- Gate to Source Voltage - V
R
DS(on)
- Drain to Source On-state Resistance - mΩ
05101520
Pulsed
50
40
30
20
10
0
I
D
= 20 A
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
I
D
- Drain Current - A
R
DS(on)
- Drain to Source On-state Resistance - mΩ
10.1
80
70
60
50
40
30
20
10
010 100
Pulsed
V
GS
= 4.0 V
10 V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
T
ch
- Channel Temperature - ˚C
V
GS(off)
- Gate Cut-off Voltage - V
0.5
V
DS
= 10 V
I
D
= 1 mA
1.0
1.5
2.0
2.5
3.0
−50 0 50 100 150
0
Data Sheet D14602EJ4V0DS 5
2SK3433
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
T
ch
- Channel Temperature - ˚C
R
DS(on)
- Drain to Source On-state Resistance - mΩ
0−50
10
20
30
050 100 150
I
D
= 20 A
40
50
60
10 V
V
GS
= 4.0 V
Pulsed
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
1.0
I
SD
- Diode Forward Current - A
01.5
VSD - Source to Drain Voltage - V
0.5
Pulsed
0.1
1
10
100
1000
V
GS
= 0 V
V
GS
= 10 V
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
V
DS
- Drain to Source Voltage - V
C
iss
, C
oss
, C
rss
- Capacitance - pF
10
0.1
100
1000
10000
1 10 100
V
GS
= 0 V
f = 1 MHz
C
oss
C
rss
C
iss
SWITCHING CHARACTERISTICS
I
D
- Drain Current - A
t
d(on)
, t
r
, t
d(off)
, t
f
- Switching Time - ns
10
110.1
100
1000
10 100
t
f
t
r
t
d(on)
t
d(off)
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
I
F
- Drain Current - A
t
rr
- Reverse Recovery Time - ns
di/dt = 100 A/ s
VGS = 0 V
1
0.1
10
1.0 10 100
1000
100
µ
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
V
GS
- Gate to Source Voltage - V
Q
G
- Gate Charge - nC
V
DS
- Drain to Source Voltage - V
081241620242832
80
60
40
20
0
2
4
6
10
8
V
GS
V
DD
= 48 V
30 V
12 V
I
D
= 40 A
12
16
14
V
DS
Data Sheet D14602EJ4V0DS
6
2SK3433
SINGLE AVALANCHE CURRENT vs.
INDUCTIVE LOAD
L - Inductive Load - H
I
AS
- Single Avalanche Current - A
1
10
100
1
m10
m
V
DD
= 30
V
R
G
= 25 Ω
V
GS
= 20
→
0
V
I
AS
= 21
A
10
µ
100
µ
0.1
E
AS
=
44
mJ
25 50 75 100
160
140
120
100
80
60
40
20
0125 150
SINGLE AVALANCHE ENERGY
DERATING FACTOR
Starting T
ch
- Starting Channel Temperature - ˚C
Energy Derating Factor - %
VDD = 30 V
RG = 25 Ω
VGS = 20 → 0 V
IAS ≤ 21 A
Data Sheet D14602EJ4V0DS 7
2SK3433
PACKAGE DRAWINGS (Unit: mm)
1) TO-220AB (MP-25)
4.8 MAX.
1.Gate
2.Drain
3.Source
4.Fin (Drain)
1 2 3
10.6 MAX.
10.0 TYP. 3.6±0.2
4
3.0±0.3
1.3±0.2
0.75±0.1
2.54 TYP. 2.54 TYP.
5.9 MIN.6.0 MAX.
15.5 MAX.12.7 MIN.
1.3±0.2
0.5±0.2 2.8±0.2
φ
2) TO-262 (MP-25 Fin Cut)
4.8 MAX.
1.Gate
2.Drain
3.Source
4.Fin (Drain)
12 3
10 TYP.
1.3±0.2
0.75±0.3
2.54 TYP. 2.54 TYP.
8.5±0.2
12.7 MIN.
1.3±0.2
0.5±0.2 2.8±0.2
1.0±0.5
4
3) TO-263 (MP-25ZJ)
1.4±0.2
1.0±0.5
2.54 TYP. 2.54 TYP.
8.5±0.2
123
5.7±0.4
4
4.8 MAX. 1.3±0.2
0.5±0.2
1.Gate
2.Drain
3.Source
4.Fin (Drain)
0.7±0.2
10 TYP.
0.5R TYP.
0.8R TYP.
2.8±0.2
4) TO-220SMD (MP-25Z) Note
10 TYP.
1.4±0.2
1.0±0.5
2.54 TYP. 2.54 TYP.
8.5±0.2
123
3.0±0.5
1.1±0.4
4
4.8 MAX. 1.3±0.2
0.5±0.2
0.5R TYP.
0.8R TYP.
0.75±0.3
2.8±0.2
1.Gate
2.Drain
3.Source
4.Fin (Drain)
Note This Package is produced only in Japan.
EQUIVALENT CIRCUIT
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
Remark The diode connected between the gate and source of the transistor
serves as a protector against ESD. When this device actually used,
an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
★
2SK3433
M8E 00. 4
The information in this document is current as of July, 2002. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data
books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products
and/or types are available in every country. Please check with an NEC sales representative for
availability and additional information.
No part of this document may be copied or reproduced in any form or by any means without prior
written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.
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