VSMB2943SLX01
www.vishay.com Vishay Semiconductors
Rev. 1.1, 02-Dec-13 1Document Number: 83479
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
High Speed Infrared Emitting Diodes, 940 nm, GaAlAs, MQW
DESCRIPTION
VSMB2943SLX01 is an infrared, 940 nm, side looking
emitting diode in GaAlAs multi quantum well (MQW)
technology with high radiant power and high speed, molded
in clear, untinted plastic package (with lens) for surface
mounting (SMD).
APPLICATIONS
• IrDA compatible data transmission
• Miniature light barrier
• Photointerrupters
• Optical switch
• Remote control
• IR touch panels
FEATURES
• Package type: surface mount
• Package form: side view
• Dimensions (L x W x H in mm): 2.3 x 2.55 x 2.3
• AEC-Q101 qualified
• Peak wavelength: λp = 940 nm
• High reliability
• High radiant power
• High radiant intensity
• Angle of half intensity: ϕ = ± 25°
• Low forward voltage
• Suitable for high pulse current operation
• Package matches with detector VEMD2023SLX01 and
VEMT2023SLX01
• Floor life: 4 weeks, MSL 2a, acc. J-STD-020
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
Note
• Test conditions see table “Basic Characteristics“
Note
• MOQ: minimum order quantity
PRODUCT SUMMARY
COMPONENT Ie (mW/sr) ϕ (deg) λp (nm) tr (ns)
VSMB2943SLX01 20 ± 25 940 15
ORDERING INFORMATION
ORDERING CODE PACKAGING REMARKS PACKAGE FORM
VSMB2943SLX01 Tape and reel MOQ: 3000 pcs, 3000 pcs/reel Side view
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Reverse voltage VR5V
Forward current IF100 mA
Peak forward current tp/T = 0.5, tp = 100 μs IFM 200 mA
Surge forward current tp = 100 μs IFSM 1A
Power dissipation PV160 mW
Junction temperature Tj100 °C
Operating temperature range Tamb -40 to +85 °C
Storage temperature range Tstg -40 to +100 °C
Soldering temperature according figure 9, J-STD-020 Tsd 260 °C
Thermal resistance junction/ambient J-STD-051, leads 7 mm, soldered on PCB RthJA 250 K/W
VSMB2943SLX01
www.vishay.com Vishay Semiconductors
Rev. 1.1, 02-Dec-13 2Document Number: 83479
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature
0
20
40
60
80
100
120
140
160
180
0 102030405060708090100
21343 Tamb - Ambient Temperature (°C)
PV - Power Dissipation (mW)
RthJA = 250 K/W
0
20
40
60
80
100
120
0 102030405060708090100
21344
R
thJA
= 250 K/W
T
amb
- Ambient Temperature (°C)
I
F
- Forward Current (mA)
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Forward voltage IF = 100 mA, tp = 20 ms VF1.15 1.35 1.6 V
IF = 1 A, tp = 100 μs VF2.2 V
Temperature coefficient of VF
IF = 1 mA TKVF -1.8 mV/K
IF = 100 mA TKVF -1.1 mV/K
Reverse current IRNot designed for reverse operation μA
Junction capacitance VR = 0 V, f = 1 MHz, E = 0 mW/cm2CJ70 pF
Radiant intensity IF = 100 mA, tp = 20 ms Ie10 20 30 mW/sr
IF = 1 A, tp = 100 μs Ie170 mW/sr
Radiant power IF = 100 mA, tp = 20 ms φe40 mW
Temperature coefficient of radiant
power
IF = 1 mA TKφe-1.1 %/K
IF = 100 mA TKφe-0.51 %/K
Angle of half intensity ϕ± 25 deg
Peak wavelength IF = 30 mA λp920 940 960 nm
Spectral bandwidth IF = 30 mA Δλ 25 nm
Temperature coefficient of λpIF = 30 mA TKλp0.25 nm/K
Rise time IF = 100 mA, 20 % to 80 % tr15 ns
Fall time IF = 100 mA, 20 % to 80 % tf15 ns
Cut-off frequency IDC = 70 mA, IAC = 30 mA pp fc23 MHz
VSMB2943SLX01
www.vishay.com Vishay Semiconductors
Rev. 1.1, 02-Dec-13 3Document Number: 83479
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
Fig. 3 - Forward Current vs. Forward Voltage
Fig. 4 - Relative Forward Voltage vs. Ambient Temperature
Fig. 5 - Radiant Intensity vs. Forward Current
Fig. 6 - Relative Radiant Intensity vs. Ambient Temperature
Fig. 7 - Relative Radiant Power vs. Wavelength
Fig. 8 - Relative Radiant Intensity vs. Angular Displacement
1
10
100
1000
01 23
t
p
= 100 µs
t
p
/T= 0.001
V
F
- Forward Voltage (V)
21534
I
F
- Forward Current (mA)
90
92
94
96
98
100
102
104
106
108
110
- 40 - 20 0 20 40 60 80 100
Tamb - Ambient Temperature (°C)
VF, rel - Relative Forward Voltage (%)
I
F
= 100 mA
I
F
= 10 mA
I
F
= 1 mA
21443
t
p
= 20 ms
0.1
10
100
1000
0.001 0.1 1
tp = 100 µs
I
F
- Forward Current (A)
I
e
- Radiant Intensity (mW/sr)
1
0.01
40
60
80
100
120
140
160
180
- 60 - 40 - 20 0 20 40 60 80 100
Tamb - Ambient Temperature (°C)
Ie rel - Relative Radiant Intensity (%)
tp = 20 ms
IF = 1 mA
21444
IF = 100 mA
0
10
20
30
40
50
60
70
80
90
100
840 880 920 960 1000 1040
λ - Wavelength (nm)
21445
Φ
e rel
- Relative Radiant Power (%)
I
F
= 30 mA
22694
Ie rel - Relative Radiant Intensity
ϕ - Angular Displacement
0.4 0.2 00.6
0° 10° 20°
0.9
0.8
30°
40°
50°
60°
70°
80°
0.7
1.0
VSMB2943SLX01
www.vishay.com Vishay Semiconductors
Rev. 1.1, 02-Dec-13 4Document Number: 83479
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SOLDER PROFILE
Fig. 9 - Lead (Pb)-free Reflow Solder Profile acc. J-STD-020
DRYPACK
Devices are packed in moisture barrier bags (MBB) to
prevent the products from moisture absorption during
transportation and storage. Each bag contains a desiccant.
FLOOR LIFE
Floor life (time between soldering and removing from MBB)
must not exceed the time indicated on MBB label:
Floor life: 4 weeks
Conditions: Tamb < 30 °C, RH < 60 %
Moisture sensitivity level 2a, acc. to J-STD-020.
DRYING
In case of moisture absorption devices should be baked
before soldering. Conditions see J-STD-020 or label.
Devices taped on reel dry using recommended conditions
192 h at 40 °C (+ 5 °C), RH < 5 %.
PACKAGE DIMENSIONS in millimeters: VSMB2943SL
0
50
100
150
200
250
300
0 50 100 150 200 250 300
Time (s)
Temperature (°C)
240 °C 245 °C
max. 260 °C
max. 120 s max. 100 s
217 °C
max. 30 s
max. ramp up 3 °C/s max. ramp down 6 °C/s
19841
255 °C
VSMB2943SLX01
www.vishay.com Vishay Semiconductors
Rev. 1.1, 02-Dec-13 5Document Number: 83479
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TAPING AND REEL DIMENSIONS in millimeters: VSMB2943SL
Legal Disclaimer Notice
www.vishay.com Vishay
Revision: 08-Feb-17 1Document Number: 91000
Disclaimer
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
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