MMBT2369A_NL - FAIRCHILD SEMICONDUCTOR

October, 2018 − Rev. 11

1Publication Order Number:

MMBT2369LT1/D

MMBT2369L, MMBT2369AL

Switching Transistors

NPN Silicon

Features

•S Prefix for Automotive and Other Applications Requiring Unique

Site and Control Change Requirements; AEC−Q101 Qualified and

PPAP Capable

•These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant*

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector−Emitter Voltage VCEO 15 Vdc

Collector−Emitter Voltage VCES 40 Vdc

Collector−Base Voltage VCBO 40 Vdc

Emitter−Base Voltage VEBO 4.5 Vdc

Collector Current − Continuous IC200 mAdc

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Total Device Dissipation FR−5 Board

(Note 1) TA = 25°C

Derate above 25°C

PD225

1.8

mW/°C

Thermal Resistance, Junction−to−Ambient RqJA 556 °C/W

Total Device Dissipation Alumina

Substrate, (Note 2) TA = 25°C

Derate above 25°C

PD300

2.4

mW/°C

Thermal Resistance, Junction−to−Ambient RqJA 417 °C/W

Junction and Storage Temperature TJ, Tstg −55 to +150 °C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

1. FR−5 = 1.0  0.75  0.062 in.

2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

Device Package Shipping†

ORDERING INFORMATION

MARKING

DIAGRAM

COLLECTOR

BASE

EMITTER

www.onsemi.com

xxx = M1J or 1JA

M = Date Code*

G= Pb−Free Package

*Date Code orientation and/or overbar may

vary depending upon manufacturing location.

(Note: Microdot may be in either location)

MMBT2369ALT1G SOT−23

(Pb−Free)

3,000 /

Tape & Reel

MMBT2369LT1G SOT−23

(Pb−Free)

3,000 /

Tape & Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

SOT−23

CASE 318

STYLE 6

xxx MG

SMMBT2369LT1G SOT−23

(Pb−Free)

3,000 /

Tape & Reel

SMMBT2369ALT1G SOT−23

(Pb−Free)

3,000 /

Tape & Reel

MMBT2369LT3G SOT−23

(Pb−Free)

10,000 /

Tape & Reel

MMBT2369L, MMBT2369AL

www.onsemi.com

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Collector−Emitter Breakdown Voltage (Note 3)

(IC = 10 mAdc, IB = 0)

V(BR)CEO 15 − −

Vdc

Collector−Emitter Breakdown Voltage

(IC = 10 mAdc, VBE = 0)

V(BR)CES 40 − −

Vdc

Collector−Base Breakdown Voltage

(IC = 10 mAdc, IE = 0)

V(BR)CBO 40 − −

Vdc

Emitter−Base Breakdown Voltage

(IE = 10 mAdc, IC = 0)

V(BR)EBO 4.5 − −

Vdc

Collector Cutoff Current

(VCB = 20 Vdc, IE = 0)

(VCB = 20 Vdc, IE = 0, TA = 150°C)

ICBO

−

0.4

mAdc

Collector Cutoff Current

MMBT2369A (VCE = 20 Vdc, VBE = 0)

ICES

− − 0.4

mAdc

ON CHARACTERISTICS

DC Current Gain (Note 3)

MMBT2369 (IC = 10 mAdc, VCE = 1.0 Vdc)

MMBT2369A (IC = 10 mAdc, VCE = 1.0 Vdc)

MMBT2369A (IC = 10 mAdc, VCE = 0.35 Vdc)

MMBT2369A (IC = 10 mAdc, VCE = 0.35 Vdc, TA = −55°C)

MMBT2369A (IC = 30 mAdc, VCE = 0.4 Vdc)

MMBT2369 (IC = 100 mAdc, VCE = 2.0 Vdc)

MMBT2369A (IC = 100 mAdc, VCE = 1.0 Vdc)

hFE 40

−

120

−

Collector−Emitter Saturation Voltage (Note 3)

MMBT2369 (IC = 10 mAdc, IB = 1.0 mAdc)

MMBT2369A (IC = 10 mAdc, IB = 1.0 mAdc)

MMBT2369A (IC = 10 mAdc, IB = 1.0 mAdc, TA = +125°C)

MMBT2369A (IC = 30 mAdc, IB = 3.0 mAdc)

MMBT2369A (IC = 100 mAdc, IB = 10 mAdc)

VCE(sat)

−

0.25

0.20

0.30

0.25

0.50

Vdc

Base −Emitter Saturation Voltage (Note 3)

MMBT2369/A (IC = 10 mAdc, IB = 1.0 mAdc)

MMBT2369A (IC = 10 mAdc, IB = 1.0 mAdc, TA = −55°C)

MMBT2369A (IC = 30 mAdc, IB = 3.0 mAdc)

MMBT2369A (IC = 100 mAdc, IB = 10 mAdc)

VBE(sat) 0.7

−

0.85

1.02

1.15

1.60

Vdc

SMALL−SIGNAL CHARACTERISTICS

Output Capacitance

(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)

Cobo

− − 4.0

Small Signal Current Gain

(IC = 10 mAdc, VCE = 10 Vdc, f = 100 MHz)

hfe 5.0 − −

−

SWITCHING CHARACTERISTICS

Storage Time

(IB1 = IB2 = IC = 10 mAdc)

−5.0 13

Turn−On Time

(VCC = 3.0 Vdc, IC = 10 mAdc, IB1 = 3.0 mAdc)

ton

−8.0 12

Turn−Off Time

(VCC = 3.0 Vdc, IC = 10 mAdc, IB1 = 3.0 mAdc, IB2 = 1.5 mAdc)

toff

−10 18

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

3. Pulse Test: Pulse Width v300 ms, Duty Cycle v2.0%.

MMBT2369L, MMBT2369AL

www.onsemi.com

Figure 1. ton Circuit − 10 mA Figure 2. ton Circuit − 100 mA

Figure 3. toff Circuit − 10 mA Figure 4. toff Circuit − 100 mA

Figure 5. Turn−On and Turn−Off Time Test Circuit

+10.6 V

-1.5 V

< 1 ns

PULSE WIDTH (t1) = 300 ns

DUTY CYCLE = 2%

3 V 270 W

3.3 k Cs* < 4 pF

10 V 95 W

1 k Cs* < 12 pF

+10.8 V

-2 V 0

< 1 ns

PULSE WIDTH (t1) = 300 ns

DUTY CYCLE = 2%

+10.75 V

-9.15 V

< 1 ns

PULSE WIDTH (t1) = 300 ns

DUTY CYCLE = 2%

< 1 ns

-8.6 V

+11.4 V t1

PULSE WIDTH (t1) BETWEEN

10 AND 500 ms

DUTY CYCLE = 2%

270 W

3.3 k Cs* < 4 pF

95 W

1 k Cs* < 12 pF

10 V

1N916

Vout 90%

10%

Vin

ton

Vin

3.3 kW

50 W

220 W

50 W

0.1 mF

Vout

3.3 k

0.0023 mF0.0023 mF

0.005 mF 0.005 mF

0.1 mF 0.1 mF

VBB +

-VCC = 3 V

Vin

90%

10%

toff

Vout

VBB = +12 V

Vin = -15 V

TO OSCILLOSCOPE

INPUT IMPEDANCE = 50 W

RISE TIME = 1 ns

TURN-OFF WAVEFORMS

PULSE GENERATOR

Vin RISE TIME < 1 ns

SOURCE IMPEDANCE = 50 W

PW ≥ 300 ns

DUTY CYCLE < 2%

TURN-ON WAVEFORMS

*Total shunt capacitance of test jig and connectors.

MMBT2369L, MMBT2369AL

www.onsemi.com

100.1 0.2 0.5 1.0 2.0 5.0

REVERSE BIAS (VOLTS)

CAPACITANCE (pF)

SWITCHING TIMES (nsec)

LIMIT

TYPICAL

Cob

Cib

TJ = 25°C

Figure 6. Junction Capacitance Variations

100

1 2 5 10 20 50 100

IC, COLLECTOR CURRENT (mA)

Figure 7. Typical Switching Times

βF = 10

VCC = 10 V

VOB = 2 V

tr (VCC = 3 V)

VCC = 10 V

+6 V

-4 V

< 1 ns

PULSE WIDTH (t1) = 300 ns

DUTY CYCLE = 2%

10 V 980

500 Cs* < 3 pF

C COPT

TIME

C < COPT C = 0

Figure 8. Turn−Off Waveform Figure 9. Storage Time Equivalent Test Circuit

VCE, MAXIMUM COLLECTOR-EMITTER VOLTAGE (VOLTS)

1.0

0.8

0.6

0.4

0.2

0.02 0.05 0.1 0.2 0.5 1 2 5 10 20

IC = 3 mA IC = 10 mA IC = 30 mA IC = 50 mA IC = 100 mA

TJ = 25°C

IB, BASE CURRENT (mA)

Figure 10. Maximum Collector Saturation Voltage Characteristics

MMBT2369L, MMBT2369AL

www.onsemi.com

hFE, MINIMUM DC CURRENT GAIN

V(sat), SATURATION VOLTAGE (VOLTS)

200

100

1 2 5 10 20 50 100

IC, COLLECTOR CURRENT (mA)

Figure 11. Minimum Current Gain Characteristics

VCE = 1 V

TJ = 125°C

75°C

25°C

-15°C

-55°C

TJ = 25°C and 75°C

1.4

1.2

1.0

0.8

0.6

0.4

0.2 1 2 5 10 20 50 100

IC, COLLECTOR CURRENT (mA)

Figure 12. Saturation Voltage Limits

βF = 10

TJ = 25°C

MAX VBE(sat)

MIN VBE(sat)

MAX VCE(sat)

MMBT2369L, MMBT2369AL

www.onsemi.com

PACKAGE DIMENSIONS

SOT−23 (TO−236)

CASE 318−08

ISSUE AS

STYLE 6:

PIN 1. BASE

2. EMITTER

3. COLLECTOR

NOTES:

1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.

2. CONTROLLING DIMENSION: MILLIMETERS.

3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.

MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF

THE BASE MATERIAL.

4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,

PROTRUSIONS, OR GATE BURRS.

SOLDERING FOOTPRINT

VIEW C

0.25

SEE VIEW C

DIM

MIN NOM MAX MIN

MILLIMETERS

0.89 1.00 1.11 0.035

INCHES

A1 0.01 0.06 0.10 0.000

b0.37 0.44 0.50 0.015

c0.08 0.14 0.20 0.003

D2.80 2.90 3.04 0.110

E1.20 1.30 1.40 0.047

e1.78 1.90 2.04 0.070

L0.30 0.43 0.55 0.012

0.039 0.044

0.002 0.004

0.017 0.020

0.006 0.008

0.114 0.120

0.051 0.055

0.075 0.080

0.017 0.022

NOM MAX

2.10 2.40 2.64 0.083 0.094 0.104

0.35 0.54 0.69 0.014 0.021 0.027

0−−− 10 0 −−− 10

T°°°°

TOP VIEW

SIDE VIEW

END VIEW

2.90

0.80

DIMENSIONS: MILLIMETERS

0.90

PITCH

3X 0.95

RECOMMENDED

ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.

ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent

coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.

ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,

regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or

specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer

application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not

designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification

in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized

application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and

expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such

claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This

literature is subject to all applicable copyright laws and is not for resale in any manner.

PUBLICATION ORDERING INFORMATION

N. American Technical Support: 800−282−9855 Toll Free

USA/Canada

Europe, Middle East and Africa Technical Support:

Phone: 421 33 790 2910

MMBT2369LT1/D

LITERATURE FULFILLMENT:

Literature Distribution Center for ON Semiconductor

19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA

Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada

Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada

Email: orderlit@onsemi.com

ON Semiconductor Website: www.onsemi.com

Order Literature: http://www.onsemi.com/orderlit

For additional information, please contact your local

Sales Representative

◊