1 - 2
© 2000 IXYS All rights reserved
Symbol Test Conditions Maximum Ratings
VCES TJ= 25°C to 150°C 1200 V
VCGR TJ= 25°C to 150°C; RGE = 1 MW1200 V
VGES Continuous ±20 V
VGEM Transient ±30 V
IC25 TC= 25°C30A
IC90 TC= 90°C15A
ICM TC= 25 °C, 1 ms 6 0 A
SSOA VGE= 15 V, TJ = 125°C, RG = 10 W ICM = 40 A
(RBSOA) Clamped inductive load @ 0.8 VCES
tSC TJ = 125°C, VGE = 720 V; VGE = 15 V, RG = 10 W 10 ms
Non repetitive
PCTC= 25°C 150 W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
MdMounting torque (TO-247) 1.13/10 Nm/lb.in.
Maximum lead temperature for soldering 300 °C
1.6 mm (0.062 in.) from case for 10 s
Maximum tab temperature for soldering (TO-268) 260 °C
Weight TO-247 6 g
TO-268 4 g
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
BVCES IC= 1.0 mA, VGE = 0 V 1200 V
VGE(th) IC= 250 mA, VCE = VGE 36V
ICES VCE = 0.8 • VCES 50 mA
Note 1 TJ = 125°C 2.5 mA
IGES VCE = 0 V, VGE = ±20 V ±100 nA
VCE(sat) IC = IC90, VGE = 15 V 3.0 3.4 V
Note 2 TJ = 125°C 2.8 V
Features
• High Blocking Voltage
• Epitaxial Silicon drift region
- fast switching
- small tail current
- low switching losses
• MOS gate turn-on for drive simplicity
• Molding epoxies meet UL 94 V-0
flammability classification
Applications
• AC motor speed control
• DC servo and robot drives
• Uninterruptible power supplies (UPS)
• Switched-mode and resonant-mode
power supplies
• DC choppers
98708A (7/00)
TO-247 AD (IXSH)
(TAB)
TO-268 ( IXST)
(TAB)
GE
IC25 = 30 A
VCES = 1200 V
VCE(sat) = 3.4 V
GCE
IXSH 15N120BD1
IXST 15N120BD1
HIGH V oltage IGBT
with Diode
"S" Series - Improved SCSOA Capability
IXYS reserves the right to change limits, test conditions, and dimensions.
Preliminary data
2 - 2
© 2000 IXYS All rights reserved
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs IC= IC90; VCE = 10 V, 7 9 . 5 S
Note 2
Cies 1400 pF
Coes VCE = 25 V, VGE = 0 V, f = 1 MHz 1 20 p F
Cres 37 pF
Qg57 nC
Qge IC= IC90, VGE = 15 V, VCE = 0.5 VCES 14 nC
Qgc 25 nC
td(on) 30 ns
tri 25 ns
td(off) 148 300 ns
tfi 126 250 ns
Eoff 1.5 2.9 mJ
td(on) 30 ns
tri 25 ns
Eon 2.6 mJ
td(off) 265 ns
tfi 298 ns
Eoff 3.1 mJ
RthJC 0.83 K/W
RthCK (TO-247) 0.25 K/W
Inductive load, TJ = 125°C
IC = IC90, VGE = 15 V
RG = 10 W, VCE = 0.8 VCES
Note 3
Inductive load, TJ = 25°C
IC = IC90, VGE = 15 V
RG = 10 W
VCE = 0.8 VCES
Note 3
Notes: 1. Device must be heatsunk for high temperature leakage current measurements to
avoid thermal runaway.
2. Pulse test, t £ 300 ms, duty cycle £ 2 %
3. Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ orincreased RG.
IXSH 15N120BD1
IXST 15N120BD1
Reverse Diode (FRED) Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
VFIF = IC90, VGE = 0 V TJ = 150OC 1.7 V
Note 2 TJ = 25OC 2.5 V
IRM IF = 30A; VGE = 0 V; TJ = 100°C 5.5 A
VR = 100 V; -diF/dt = 100 A/ms
trr IF = 1 A; -di/dt = 200 A/ms; VR = 30 V TJ =25°C30 ns
RthJC 0.9 K/W
TO-247 AD (IXSH) Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 19.81 20.32 0.780 0.800
B 20.80 21.46 0.819 0.845
C 15.75 16.26 0.610 0.640
D 3.55 3.65 0.140 0.144
E 4.32 5.49 0.170 0.216
F 5.4 6.2 0.212 0.244
G 1.65 2.13 0.065 0.084
H - 4.5 - 0.177
J 1.0 1.4 0.040 0.055
K 10.8 11.0 0.426 0.433
L 4.7 5.3 0.185 0.209
M 0.4 0.8 0.016 0.031
N 1.5 2.49 0.087 0.102
TO-268AA (D3 PAK)
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.9 5.1 .193 .201
A12.7 2.9 .106 .114
A2.02 .25 .001 .010
b 1.15 1.45 .045 .057
b21.9 2.1 .75 .83
C .4 .65 .016 .026
D 13.80 14.00 .543 .551
E 15.85 16.05 .624 .632
E113.3 13.6 .524 .535
e 5.45 BSC .215 BSC
H 18.70 19.10 .736 .752
L 2.40 2.70 .094 .106
L1 1.20 1.40 .047 .055
L2 1.00 1.15 .039 .045
L3 0.25 BSC .010 BSC
L4 3.80 4.10 .150 .161
Min. Recommended Footprint
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
