Silicon SPDT Switch, Reflective,
9 kHz to 44 GHz
Data Sheet
ADRF5025
Rev. B Document Feedback
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice.
No license is granted by implication or otherwise under any patent or patent rights of Analog
Devices. Trademarks and registered trademarks are the property of their respective owners.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781.329.4700 ©20182020 Analog Devices, Inc. All rights reserved.
Technical Support www.analog.com
FEATURES
Ultrawideband frequency range: 9 kHz to 44 GHz
Reflective design
Low insertion loss with impedance match
0.9 dB typical to 18 GHz
1.4 dB typical to 40 GHz
1.6 dB typical to 44 GHz
Low insertion loss without impedance match
0.9 dB typical to 18 GHz
1.7 dB typical to 40 GHz
2.2 dB typical to 44 GHz
High input linearity
P1dB: 27.5 dBm typical
IP3: 50 dBm typical
High RF input power handling
Through path: 27 dBm
Hot switching: 27 dBm
No low frequency spurious
RF settling time (50% VCTL to 0.1 dB final RF output): 3.4 µs
12-terminal, 2.25 mm × 2.25 mm LGA package
Pin compatible with the ADRF5024 fast switching version
APPLICATIONS
Industrial scanners
Test and instrumentation
Cellular infrastructure: 5G mmWave
Military radios, radars, electronic counter measures (ECMs)
Microwave radios and very small aperture terminals (VSATs)
FUNCTIONAL BLOCK DIAGRAM
ADRF5025
RF2
VSS
CTRL
VDD
RF1
RFC
DRIVER
16533-001
Figure 1.
GENERAL DESCRIPTION
The ADRF5025 is a reflective single-pole double-throw (SPDT)
switch, manufactured in silicon process.
This switch operates from 9 kHz to 44 GHz with better than
1.6 dB of insertion loss and 35 dB of isolation. The ADRF5025
has an radio frequency (RF) input power handling capability of
27 dBm for both the through path and hot switching.
The ADRF5025 draws a low current of 14 µA on the positive
supply of +3.3 V and 120 µA on negative supply of −3.3 V. The
device employs complementary metal-oxide semiconductor
(CMOS)-/low voltage transistor to transistor logic (LVTTL)-
compatible controls.
The ADRF5025 is pin compatible with the ADRF5024, low
frequency cutoff version, which operates from 100 MHz to
44 GHz.
The ADRF5025 RF ports are designed to match a characteristic
impedance of 50 Ω. For ultrawideband products, impedance
matching on the RF transmission lines can further optimize high
frequency insertion loss and return loss characteristics. Refer to
the Electrical Specifications section, Typical Performance
Characteristics section, and Applications Information section
for more details.
The ADRF5025 comes in a 2.25 mm × 2.25 mm, 12-terminal,
RoHS-compliant, land grid array (LGA) package and can
operate from −40°C to +105°C.
ADRF5025 Data Sheet
Rev. B | Page 2 of 13
TABLE OF CONTENTS
Features .............................................................................................. 1
Applications ...................................................................................... 1
Functional Block Diagram .............................................................. 1
General Description ......................................................................... 1
Revision History ............................................................................... 2
Specifications .................................................................................... 3
Electrical Specifications ............................................................... 3
Absolute Maximum Ratings ........................................................... 5
Thermal Resistance ...................................................................... 5
Power Derating Curves ............................................................... 5
ESD Caution.................................................................................. 5
Pin Configuration and Function Descriptions ............................ 6
Interface Schematics .....................................................................6
Typical Performance Characteristics .............................................7
Insertion Loss, Return Loss, and Isolation ................................7
Input Power Compression and Third-Order Intercept ..........8
Theory of Operation .........................................................................9
Applications Information ............................................................. 10
Evaluation Board ........................................................................ 10
Probe Matrix Board ................................................................... 12
Outline Dimensions ....................................................................... 13
Ordering Guide .......................................................................... 13
REVISION HISTORY
5/2020—Rev. A to Rev. B
Changes to Return Loss Parameter, Table 1 ................................. 3
Changes to Table 2 ........................................................................... 5
Changes to Insertion Loss, Return Loss, and Isolation Section,
Figure 7, and Figure 10 .................................................................... 7
Changes to Theory of Operation Section ...................................... 9
5/2018—Rev. 0 to Rev. A
Change to Input Linearity Parameter, Table 1.............................. 4
Change to RF Input Power Parameter, Table 2 ............................ 5
Updated Outline Dimensions ...................................................... 13
Changes to Ordering Guide .......................................................... 13
5/2018—Revision 0: Initial Version
Data Sheet ADRF5025
Rev. B | Page 3 of 13
SPECIFICATIONS
ELECTRICAL SPECIFICATIONS
VDD = 3.3 V, VSS = −3.3 V, VCTL = 0 V or 3.3 V, and case temperature (TCASE) = 25°C for a 50 Ω system, unless otherwise noted.
Table 1.
Parameter Symbol Test Conditions/Comments Min Typ Max Unit
FREQUENCY RANGE f 0.009 44,000 MHz
INSERTION LOSS
Between RFC and RF1/RF2 (On)
With Impedance Match See Figure 24
9 kHz to 18 GHz 0.9 dB
18 GHz to 26 GHz 1.2 dB
26 GHz to 35 GHz 1.3 dB
35 GHz to 40 GHz 1.4 dB
40 GHz to 44 GHz 1.6 dB
Without Impedance Match See Figure 25
9 kHz to 18 GHz 0.9 dB
18 GHz to 26 GHz 1.0 dB
26 GHz to 35 GHz 1.4 dB
35 GHz to 40 GHz 1.7 dB
40 GHz to 44 GHz 2.2 dB
RETURN LOSS
RFC and RF1/RF2 (On)
With Impedance Match See Figure 24
9 kHz to 18 GHz 17 dB
18 GHz to 26 GHz 13 dB
26 GHz to 35 GHz 12 dB
35 GHz to 40 GHz 13 dB
40 GHz to 44 GHz 18 dB
Without Impedance Match See Figure 25
9 kHz to 18 GHz 20 dB
18 GHz to 26 GHz 20 dB
26 GHz to 35 GHz 13 dB
35 GHz to 40 GHz 11 dB
40 GHz to 44 GHz 10 dB
ISOLATION
Between RFC and RF1/RF2 9 kHz to 18 GHz 42 dB
18 GHz to 26 GHz 41 dB
26 GHz to 35 GHz 39 dB
35 GHz to 40 GHz 36 dB
40 GHz to 44 GHz 35 dB
Between RF1 and RF2 9 kHz to 18 GHz 48 dB
18 GHz to 26 GHz 46 dB
26 GHz to 35 GHz 44 dB
35 GHz to 40 GHz 43 dB
40 GHz to 44 GHz 40 dB
SWITCHING CHARACTERISTICS
Rise and Fall Time tRISE, tFALL 10% to 90% of RF output 0.6 µs
On and Off Time tON, tOFF 50% VCTL to 90% of RF output 1.7 µs
RF Settling Time
0.1 dB 50% VCTL to 0.1 dB of final RF output 3.4 µs
0.05 dB 50% VCTL to 0.05 dB of final RF output 4.2 µs
ADRF5025 Data Sheet
Rev. B | Page 4 of 13
Parameter Symbol Test Conditions/Comments Min Typ Max Unit
INPUT LINEARITY1 5 MHz to 40 GHz
1 dB Power Compression P1dB 27.5 dBm
Third-Order Intercept IP3 Two tone input power = 12 dBm each tone,
Δf = 1 MHz
50 dBm
SUPPLY CURRENT VDD and VSS pins
Positive Supply Current IDD 14 µA
Negative Supply Current ISS 120 µA
DIGITAL CONTROL INPUTS CTRL pin
Voltage
Low VINL 0 0.8 V
High VINH 1.2 3.3 V
Current
Low and High IINL, IINH <1 µA
RECOMMENDED OPERATING CONDITONS
Supply Voltage
Positive VDD 3.15 3.45 V
Negative VSS −3.45 −3.15 V
Digital Control Voltage VCTL 0 VDD V
RF Input Power2 PIN f = 5 MHz to 40 GHz, TCASE = 85°C3
Through Path RF signal is applied to RFC or through
connected RF1/RF2
27 dBm
Hot Switching RF signal is present at RFC while switching
between RF1 and RF2
27 dBm
Case Temperature TCASE −40 +105 °C
1 For input linearity performance over frequency, see Figure 13 to Figure 16.
2 For power derating over frequency, see Figure 2 and Figure 3.
3 For 105°C operation, the power handling degrades from the TCASE = 85°C specification by 3 dB.
Data Sheet ADRF5025
Rev. B | Page 5 of 13
ABSOLUTE MAXIMUM RATINGS
For the recommended operating conditions, see Table 1.
Table 2.
Parameter Rating
Positive Supply Voltage −0.3 V to +3.6 V
Negative Supply Voltage −3.6 V to +0.3 V
Digital Control Input Voltage
Voltage −0.3 V to VDD + 0.3 V
Current 3 mA
RF Input Power1 (f = 5 MHz to 40 GHz,
TCASE = 85°C2)
Through Path 27.5 dBm
Hot Switching 27.5 dBm
RF Input Power Under Unbiased
Condition1 (VDD, VSS = 0 V)
21 dBm
Temperature
Junction, TJ 135°C
Storage Range 65°C to +150°C
Reflow 260°C
ESD Sensitivity
Human Body Model (HBM)
RFC, RF1, and RF2 Pins 1000 V
Digital Pins 2000 V
Charged Device Model (CDM) 1250 V
1 For power derating vs. frequency, see Figure 2 and Figure 3. This power
derating is applicable for insertion loss path and hot switching power
specifications.
2 For 105°C operation, the power handling degrades from the TCASE = 85°C
specification by 3 dB.
Stresses at or above those listed under Absolute Maximum
Ratings may cause permanent damage to the product. This is a
stress rating only; functional operation of the product at these
or any other conditions above those indicated in the
operational section of this specification is not implied.
Operation beyond the maximum operating conditions for
extended periods may affect product reliability.
Only one absolute maximum rating can be applied at any one
time.
THERMAL RESISTANCE
Thermal performance is directly linked to printed circuit board
(PCB) design and operating environment. Careful attention to
PCB thermal design is required.
θJC is the junction to case bottom (channel to package bottom)
thermal resistance.
Table 3. Thermal Resistance
Package Type θJC Unit
CC-12-3, Through Path 352 °C/W
POWER DERATING CURVES
–14
–12
–10
–6
–4
–2
–8
0
2
10k 100k 1M 10M 100M 1G 10G 100G
POWER DERATING (dB)
FREQUENCY (Hz)
16533-002
Figure 2. Power Derating vs. Frequency, Low Frequency Detail, TCASE = 85°C
–14
–12
–6
–8
–10
–4
–2
0
2
35 38 44 5041 47
POWER DERATING (dB)
FREQUENCY (GHz)
16533-003
Figure 3. Power Derating vs. Frequency, High Frequency Detail, TCASE = 85°C
ESD CAUTION
ADRF5025 Data Sheet
Rev. B | Page 6 of 13
PIN CONFIGURATION AND FUNCTION DESCRIPTIONS
Figure 4. Pin Configuration (Top View)
Table 4. Pin Function Descriptions
Pin No. Mnemonic Description
1, 3, 4, 6, 10, 12 GND Ground. These pins must be connected to the RF/dc ground of the PCB.
2 RFC RF Common Port. This pin is dc-coupled to 0 V and ac matched to 50 Ω. No dc blocking capacitor is
necessary when the RF line potential is equal to 0 V dc. See Figure 5 for the interface schematic.
5 RF1 RF Port 1. This pin is dc-coupled to 0 V and ac matched to 50 Ω. No dc blocking capacitor is necessary when
the RF line potential is equal to 0 V dc. See Figure 5 for the interface schematic.
7 VDD Positive Supply Voltage.
8 CTRL Control Input Voltage. See Figure 6 for the interface schematic.
9 VSS Negative Supply Voltage.
11 RF2 RF Port 2. This pin is dc-coupled to 0 V and ac matched to 50 Ω. No dc blocking capacitor is necessary when
the RF line potential is equal to 0 V dc. See Figure 5 for the interface schematic.
EPAD Exposed Pad. The exposed pad must be connected to the RF/dc ground of the PCB.
INTERFACE SCHEMATICS
16533-005
RFC,
RF1,
RF2
Figure 5. RFx Pins Interface Schematic
VDD
VDD
CTRL
16533-006
Figure 6. CTRL Interface Schematic
Data Sheet ADRF5025
Rev. B | Page 7 of 13
TYPICAL PERFORMANCE CHARACTERISTICS
INSERTION LOSS, RETURN LOSS, AND ISOLATION
VDD = 3.3 V, VSS = −3.3 V, VCTL = 0 V or VDD, and TCASE = 25°C for a 50 Ω system, unless otherwise noted.
Insertion loss and return loss are measured on the probe matrix board using ground-signal-ground (GSG) probes close to the RFx pins.
See the Applications Information section for details on the evaluation and probe matrix boards.
–4.0
–3.5
–3.0
–2.5
–2.0
–1.5
–1.0
–0.5
0
0510 15 20 25 30 35 40 45 50
INSERTION LOSS (dB)
FREQUENCY (GHz)
TCASE = –40°C
TCASE = + 25°C
TCASE = + 85°C
TCASE = + 105°C
TCASE = –55°C
16533-007
Figure 7. Insertion Loss vs. Frequency with Impedance Match
–40
–35
–30
–25
–20
–15
–10
–5
0
0510 15 20 25 30 35 40 45 50
RET URN LOS S ( dB)
FREQUENCY (GHz)
RFC
RF1 ON
RF2 ON
16533-008
Figure 8. Return Loss vs. Frequency for RFC and RFx (On)
with Impedance Match
–80
–70
–60
–50
–40
–30
–20
–10
0
0 5 10 15 20 25 30 35 40 45 50
ISOLATION (dB)
FREQUENCY (GHz)
RFC TO RFx
RFx TO RFx
16533-009
Figure 9. Isolation vs. Frequency with Impedance Match
–4.0
–3.5
–3.0
–2.5
–2.0
–1.5
–1.0
–0.5
0
0510 15 20 25 30 35 40 45 50
INSERTION LOSS (dB)
FREQUENCY ( GHz)
TCASE = –40°C
TCASE = + 25°C
TCASE = + 85°C
TCASE = + 105°C
TCASE = –55°C
16533-010
Figure 10. Insertion Loss vs. Frequency Without Impedance Match
–40
–35
–30
–25
–20
–15
–10
–5
0
0 5 10 15 20 25 30 35 40 45 50
RET URN LOS S ( dB)
FREQUENCY (GHz)
RFC
RF1 ON
RF2 ON
16533-011
Figure 11. Return Loss vs. Frequency for RFC and RFx (On)
Without Impedance Match
–80
–70
–60
–50
–40
–30
–20
–10
0
0510 15 20 25 30 35 40 45 50
ISOLATION (dB)
FREQUENCY (GHz)
RFC TO RFx
RFx TO RFx
16533-012
Figure 12. Isolation vs. Frequency Without Impedance Match
ADRF5025 Data Sheet
Rev. B | Page 8 of 13
INPUT POWER COMPRESSION AND THIRD-ORDER INTERCEPT
VDD = 3.3 V, VSS = −3.3 V, VCTL = 0 V or VDD, and TCASE = 25°C for a 50 Ω system, unless otherwise noted. All of the large signal
performance parameters were measured on the evaluation board.
10
12
14
16
18
20
22
24
26
28
30
0 5 10 15 20 25 30 35 40
INPUT P1dB (dBm)
FREQUENCY (GHz)
16533-013
Figure 13. Input P1dB vs. Frequency
20
25
30
35
40
45
50
55
60
0 5 10 15 20 25 30 35 40
INPUT I P 3 ( dBm)
FREQUENCY (GHz)
16533-014
Figure 14. Input IP3 vs. Frequency over Temperature
10
12
14
16
18
20
22
24
26
28
30
10k 100k 1M 10M 100M 1G
INPUT P1dB (dBm)
FREQUENCY (Hz)
16533-015
Figure 15. Input P1dB vs. Frequency (Low Frequency Detail)
20
25
30
35
40
45
50
55
60
10k 100k 1M 10M 100M 1G
INPUT I P 3 ( dBm)
FREQUENCY (Hz)
16533-016
Figure 16. Input IP3 vs. Frequency over Temperature (Low Frequency Detail)
Data Sheet ADRF5025
Rev. B | Page 9 of 13
THEORY OF OPERATION
The ADRF5025 requires a positive supply voltage applied to the
VDD pin and a negative supply voltage applied to the VSS pin.
Bypassing capacitors are recommended on the supply lines to
filter high frequency noise.
All of the RF ports (RFC, RF1, and RF2) are dc-coupled to 0 V,
and no dc blocking is required at the RF ports when the RF line
potential is equal to 0 V.
The RF ports are internally matched to 50 Ω. Therefore,
external matching networks are not required. However,
impedance matching on transmission lines can be used to
improve insertion loss and return loss performance at high
frequencies.
The ADRF5025 integrates a driver to perform logic functions
internally and provides the user with the advantage of a
simplified CMOS/LVTTL-compatible control interface. This
driver features a single digital control input pin, CTRL. The
logic level applied to the CTRL pin determines which RF port is
in the insertion loss state and in the isolation state (see Table 5).
The unselected RF port of the ADRF5025 is reflective. The
isolation path provides high isolation between the unselected
port and the insertion loss path.
The ideal power-up sequence is as follows:
1. Connect GND.
2. Power up VDD and VSS. Power up VSS after VDD to
avoid current transients on VDD during ramp-up.
3. Apply the digital control inputs. The relative order of the
control inputs is not important. However, powering the
digital control inputs before the VDD supply may
inadvertently forward bias and damage the internal ESD
protection structures. To avoid this damage, use a series
1 kΩ resistor to limit the current flowing in to the control
pin. Use pull-up or pull-down resistors if the controller is
in a high impedance state after VDD is powered up and
the control pins are not driven to a valid logic state.
4. Apply an RF input signal.
The ideal power-down sequence is the reverse order of the
power-up sequence.
Table 5. Control Voltage Truth Table
RF Path
Digital Control Input (VCTRL) RF1 to RFC RF2 to RFC
Low Isolation (off) Insertion loss (on)
High Insertion loss (on) Isolation (off)
ADRF5025 Data Sheet
Rev. B | Page 10 of 13
APPLICATIONS INFORMATION
EVALUATION BOARD
The ADRF5025-EVALZ is a 4-layer evaluation board. The outer
copper (Cu) layers are 0.5 oz (0.7 mil) plated to 1.5 oz (2.2 mil)
and are separated by dielectric materials. Figure 17 shows the
evaluation board stackup.
0.5o z Cu (0.7mi l)
RO4003
0.5o z Cu (0.7mi l)
1.5o z Cu (2.2mi l) 1.5oz Cu (2.2mi l)
W = 14mil G = 7mil
T = 2.2mi l
H = 8mil
1.5o z Cu (2.2mi l)
1.5o z Cu (2.2mi l)
TOTAL THICKNE S S
–62mil
16533-017
Figure 17. Evaluation Board (Cross Section View)
All RF and dc traces are routed on the top copper layer,
whereas the inner and bottom layers are grounded planes that
provide a solid ground for the RF transmission lines. The top
dielectric material is 8 mil Rogers RO4003, offering optimal
high frequency performance. The middle and bottom dielectric
materials provide mechanical strength. The overall board
thickness is 62 mil, which allows 2.4 mm RF launchers to
be connected at the board edges.
16533-018
WITHOUT
IMPEDANCE
MATCH
WITH
IMPEDANCE
MATCH
Figure 18. Evaluation Board Layout, Top View
The RF transmission lines were designed using a coplanar
waveguide (CPWG) model, with trace width of 14 mil and
ground clearance of 7 mil to have a characteristic impedance of
50 Ω. For optimal RF and thermal grounding, as many plated
through vias as possible are arranged around transmission lines
and under the exposed pad of the package.
The ADRF5025-EVALZ has two layouts implemented; with
and without impedance matching. By default, the impedance
matched circuit is populated. For more details on the impedance
matched circuit, refer to Impedance Matching in the Probe
Matrix Board section.
THRU CAL can be used to calibrate out the board loss effects
from the ADRF5025-EVALZ evaluation board measurements to
determine the device performance at the pins of the IC. Figure 19
shows the typical board loss for the ADRF5025-EVALZ
evaluation board at room temperature, the embedded insertion
loss, and the de-embedded insertion loss for ADRF5025.
–7
–6
–5
–4
–3
–2
–1
0
0 5 10 15 20 25 30 35 40 45 50
INSERTION LOSS (dB)
FREQUENCY (GHz)
THRU LOS S
EMBEDDE D INSE RTI ON L OSS
DEEM BEDDE D INSE RTI ON L OSS
16533-021
Figure 19. Insertion Loss vs. Frequency
Figure 20 shows the actual ADRF5025-EVALZ with its
component placement.
Two power supply ports are connected to the VDD and VSS
test points, TP7 and TP5 (or TP3 and TP1 if using without the
impedance match circuit), and the ground reference is
connected to the GND test point, TP4 or TP8. On the supply
traces, VDD and VSS, a 100 pF bypass capacitor filters high
frequency noise. Additionally, unpopulated components
positions are available for applying extra bypass capacitors.
A control port is connected to the CTRL test point, TP6 (or
TP2 for without the impedance match circuit). There are
provisions for the resistor capacitor (RC) filter to eliminate dc-
coupled noise, if needed, by the application. The resistor can
also improve the isolation between the RF and the control signal.
The RF input and output ports (RFC, RF1, and RF2) are
connected through 50 Ω transmission lines to the 2.4 mm
RF launchers, J10, J9, and J8 (or J2, J3, and J1 for the without
impedance match circuit), respectively. These high frequency
RF launchers are by contact and are not soldered to the board.
A THRU cal line connects the unpopulated J6 and J7 launchers
(or J4 and J5 for without the impedance match circuit). This
transmission line is used to estimate the loss due to the PCB
over the environmental conditions being evaluated.
The schematic of the ADRF5025-EVALZ evaluation board
is shown in Figure 21.
Data Sheet ADRF5025
Rev. B | Page 11 of 13
16533-019
Figure 20. Evaluation Board Component Placement
VSS
VSS
VDD
CTRL
GND
EPAD
GND
RFC
1
3
2
9
7
8
12
10
11
4
6
5
GND
GND
RF2
GND
GND
RF1
VCTRL
VDD
100pF
100pF
ADRF5025
RFC
RF1
THRU CAL
RF2
16533-020
Figure 21. Simplified Evaluation Board Schematic
Table 6. Evaluation Board Components
Component Default Value Description
C8, C9 100 pF Capacitors, C0402 package
J8 to J10 Not applicable 2.4 mm end launch connectors (Southwest Microwave: 1492-04A-5)
R2 0 Ω Resistor, 0402 package
TP5 to TP8 Not applicable Through hole mount test points
U2 ADRF5025 ADRF5025 SPDT switch, Analog Devices, Inc.
PCB 08-046672E Evaluation PCB, Analog Devices
ADRF5025 Data Sheet
Rev. B | Page 12 of 13
PROBE MATRIX BOARD
The probe matrix board is a 4-layer board. Similar to the
evaluation board, this board also uses a 8 mil Rogers RO4003
dielectric. The outer copper layers are 0.5 oz (0.7 mil) copper
plated to 1.5 oz (2.2 mil). The RF transmission lines were
designed using a CPWG model with a width of 14 mil and
ground spacing of 7 mil to have a characteristic impedance of
50 Ω.
Figure 22 and Figure 23 show the cross section and top view of
the board, respectively. Measurements are made using GSG
probes at close proximity to the RFx pins. Unlike the evaluation
board, probing reduces reflections caused by mismatch arising
from connectors, cables, and board layout, resulting in a more
accurate measurement of the device performance.
0.5o z Cu (0.7mi l)
RO4003
0.5o z Cu (0.7mi l)
1.5o z Cu (2.2mi l) 1.5oz Cu (2.2mi l)
W = 14mil G = 7mil
T = 2.2mi l
H = 8mil
1.5o z Cu (2.2mi l)
1.5o z Cu (2.2mi l)
TOTAL THICKNES S
–62mil
16533-021
Figure 22. Probe Matrix Board (Cross Section View)
16533-022
Figure 23. Probe Board Layout (Top View)
The probe matrix board includes a through reflect line (TRL)
calibration kit allowing board loss deembedding. The actual
board duplicates the same layout in matrix form to assemble
multiple devices at one time. All S parameters were measured
on this board.
Impedance Matching
Impedance matching at the RFx pins can improve the insertion
loss and return loss at high frequencies. Figure 24 and Figure 25
show the difference in the transmission lines at the RFC, RF1,
and RF2 pins. This same circuit is implemented on the probe
matrix boards and the evaluation boards.
The dimensions of the 50 Ω lines are 14 mil trace width and
7 mil gap. To implement this impedance matched circuit, a
5 mil trace with a width of 5 mils was inserted between the pin
pad and the 50 trace. The calibration kit reference kit does
not include the 5 mil matching line, and therefore, the measured
insertion loss includes the losses of the matching circuit.
16533-023
Figure 24. With Impedance Match
16533-024
Figure 25. Without Impedance Match
Data Sheet ADRF5025
Rev. B | Page 13 of 13
OUTLINE DIMENSIONS
05-10-2018-C
PKG-005304
2.35
2.25
2.15
TOP VIEW
END VIEW
BOTTOM VIEW
1
3
46
7
9
10 12
0.53 REF
PIN 1
INDICATOR
0.26
0.22
0.18
0.75
0.70
0.65
0.85
0.75
0.65
0.85
0.80
0.75
0.10 × 0.45°
PIN 1
INDIC
ATOR
0.40
BSC
0.633
BSC
0.567
BSC
0.818
BSC
0.775
BSC
0.125
BSC
0.80 REF
0.250
0.200
0.150
0.325
0.275
0.225
FOR PRO P E R CONNECTI ON O F
THE EXPOSED PAD, REFER TO
THE PIN CO NFI GURAT IO N AND
FUNCTION DES CRIPTI ONS
SECTION OF THIS DATA SHEET.
Figure 26. 12-Terminal Land Grid Array [LGA]
2.25 mm × 2.25 mm Body and 0.75 mm Package Height
(CC-12-3)
Dimensions shown in millimeters
ORDERING GUIDE
Model1 Temperature Range Package Description Package Option Marking Code
ADRF5025BCCZN −40°C to +105°C 12-Terminal Land Grid Array [LGA] CC-12-3 25
ADRF5025BCCZN-R7 −40°C to +105°C 12-Terminal Land Grid Array [LGA] CC-12-3 25
ADRF5025-EVALZ Evaluation Board
1 Z = RoHS Compliant Part.
©20182020 Analog Devices, Inc. All rights reserved. Trademarks and
registered trademarks are the property of their respective owners.
D16533-5/20(B)