HY5PS561621BFP-25 - SK Hynix - Datasheet.Directory

This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any

responsibility for use of circuits described. No patent licenses are implied.

Rev. 1.2/Aug. 2008 1

HY5PS561621BFP

256Mb(16Mx16) DDR2 SDRAM

HY5PS561621BFP

Rev. 1.2/Aug. 2008 2

1HY5PS561621BFP

Revision History

Note) The HY5PS561621BFP data sheet follows all of JEDEC DDR2 standard.

Revision No. History Draft Date Remark

0.0 Initial Graphics Version Release Jan. 2007 Preliminary

0.1 Inserted the fixed speed bin and revised typos Jan. 2007 Preliminary

0.2 Added PKG information on page 78 Feb. 2007 Preliminary

0.3 Inserted the IDD value Mar. 2007 Preliminary

0.4 Revised tWR=15ns, tRCD=15ns and tRP=15ns on page 74 Apr. 2007 Preliminary

1.0 Added IDD value of (-16) Aug. 2007

1.1 1. Corrected the definition of rising & falling slew rate (P.58)

2. Inserted the thermal characteristics table (P.56) Mar. 2008

1.2 Input/Output leakage current rating inserted.(P.56) Aug. 2008

Rev. 1.2/Aug. 2008 3

1HY5PS561621BFP

Contents

1. Description

1.1 Device Features and Ordering Information

1.1.1 Key Feaures

1.1.2 Ordering Information

1.2 16Mx16 DDR2 Pin Configurati on

1.3 Pin Description

2. Functioanal Description

2.1 Simplified State Diagram

2.2 Functional Block Diagram(16M ×16)

2.3 Basic Function & Operation of DDR2 SDRAM

2.3.1 Power up and Initialization

2.3.2 Programming the Mode and Extended Mode Registers

2.3.2.1 DDR2 SDRAM Mode Register Set(MRS)

2.3.2.2 DDR2 SDRAM Extended Mode Register Set

2.3.2.3 Off-Chip Driver(OCD) Impedance Adjustment

2.3.2.4 ODT(On Die Termination)

2.4 Bank Activate Command

2.5 Read and Write Command

2.5.1 Posted CAS

2.5.2 Burst Mode Operation

2.5.3 Burst Read Command

2.5.4 Burst Write Operation

2.5.5 Write Data Mask

2.6 Precharge Operation

2.7 Auto Precharge Operation

2.8 Refresh Commands

2.8.1 Auto Refresh Command

2.8.2 Self Refresh Command

2.9 Power Down

2.10 Asynchronous CKE Low Event

2.11 No Operation Command

2.12 Deselect Command

3. Truth Tables

3.1 Command Truth Table

3.2 Clock Enable(CKE) Truth Table for Synchronous Transistors

3.3 Data Mask Truth Table

4. Operating Conditions

4.1 Absolute Maximum DC Ratings

4.2 Operating Temperature Condition

4.3 Thermal Characteristics

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5. AC & DC Operating Conditions

5.1 DC Operation Conditions

5.1.1 Recommended DC Operating Conditions(SSTL_ 1.8)

5.1.2 ODT DC Electrical Characteristics

5.2 DC & AC Logic Input Levels

5.2.1 Input DC Logic Level

5.2.2 Input AC Logic Level

5.2.3 AC Input Test Conditions

5.2.4 Differential Input AC Logic Level

5.2.5 Differential AC output parameters

5.2.6 Overshoot / Undershoot Specification

5.3 Output Buffer Levels

5.3.1 Output AC Test Conditions

5.3.2 Output DC Current Drive

5.3.3 OCD default chracteristics

5.4 Default Output V-I Characteristics

5.4.1 Full Strength Default Pulldown Driver Characteristics

5.4.2 Full Strength Default Pullup Driver Chracteristics

5.4.3 Calibrated Output Driver V-I Characteristics

5.5 Input/Output Capacitance

6. IDD Specifications & Measurement Conditions

7. AC Timing Specifications

7.1 Timing Parameters by Speed Grade

7.2 General Notes for all AC Parame ters

7.3 Specific Notes for dedicated AC parameters.

8 Package Dimension(x16)

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1. Description

1.1 Device Features & Ordering Information

1.1.1 Key Features

• 2.0V VDD/VDDQ supports (600/500MHz)

• 1.8V VDD/VDDQ wide range max power supply supports(500/450/400/350MHz)

• All inputs and outputs are compatible with SSTL_18 interface

• Fully differential clock inputs (CK, /CK) operation

• Double data rate interface:two data transfers per clock cycle(tCK)

• Source synchronous-data transaction aligned to bidirectional data strobe (DQS, DQS)

• Differential Data Strobe (DQS, DQS)

• Data outputs on DQS, DQS edges when read (edged DQ)

• Data inputs on DQS centers when write(centered DQ)

• On chip DLL align DQ, DQS and DQS transition with CK transition

• DM mask write data-in at the both rising and falling edges of the data strobe

• All addresses and control inputs except data, data strobes and data masks latched on the rising

edges of the clock

• Programmable CAS latency 4, 5, 6 and 7 supported

• Programmable additive latency 0, 1, 2, 3, 4, 5 supported

• Programmable burst length 4/8 with both nibble sequential and interleave mode

• Internal four bank operations with single pulsed RAS

• Auto refresh and self refresh supported

• tRAS lockout supported

• 8K refresh cycles /64ms

• JEDEC standard 84ball FBGA(x16)

• Full strength driver option controlled by EMRS

• On Die Termination supported

• Off Chip Driver Impedance Adjustment supported

• Partial Array Self Refresh supported

• High Temperature Self Refresh rate supported

1.1.2 Ordering Information

Note)

Hynix supports Lead free parts for each speed grade with same specification, except Lead free materials.

We'll add "P" character after "F" for Lead free product.

For example, the part number of 350MHz Lead free product is HY5PS561621BFP-28.

Part No. Power Supply Clock Frequency Max Data Rate Interface Package

HY5PS561621BFP-16 VDD/VDDQ=2.0V 600MHz 1200Mbps/pin

SSTL_18 84Ball

FBGA

HY5PS561621BFP-2 500MHz 1000Mbps/pin

HY5PS561621BFP-2L

VDD/VDDQ=1.8V

500MHz 1000Mbps/pin

HY5PS561621BFP-22 450MHz 900Mbps/pin

HY5PS561621BFP-25 400MHz 800Mbps/pin

HY5PS561621BFP-28 350MHz 700Mbps/pin

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1HY5PS561621BFP

1.2 16Mx16 DDR2 Pin Configuration

3

VSS

UDM

VDDQ

DQ11

VSS

WE

BA1

A1

A5

A9

NC

2

NC

VSSQ

DQ9

VSSQ

VREF

CKE

BA0

A10

A3

A7

A12

1

VDD

DQ14

VDDQ

DQ12

VDDL

NC

VSS

VDD

A

B

C

D

J

K

L

M

N

P

R

7

VSSQ

UDQS

VDDQ

DQ10

VSSDL

RAS

CAS

A2

A6

A11

NC

8

UDQS

VSSQ

DQ8

VSSQ

CK

CS

A0

A4

A8

NC

9

VDDQ

DQ15

VDDQ

DQ13

VDD

ODT

VDD

VSS

LDM

VDDQ

DQ3

NC

VSSQ

DQ1

VSSQ

VDD

DQ6

VDDQ

DQ4

E

F

G

H

VSSQ

LDQS

VDDQ

DQ2

LDQS

VSSQ

DQ0

VSSQ

VDDQ

DQ7

VDDQ

DQ5

ROW AND COLUMN ADDRESS TABLE

ITEMS 16Mx16

# of Bank 4

Bank Address BA0, BA1

Auto Precharge Flag A10/AP

Row Address A0 - A12

Column Address A0-A8

Page size 1 KB

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1.3 PIN DESCRIPTION

PIN TYPE DESCRIPTION

CK, CK Input Clock: CK and CK are different ial clock inputs. All addr ess and contr ol input signals are sampled

on the crossing of the positive edge of CK and negative edge of CK. Output (read) data is ref er-

enced to the crossi ngs of CK and CK (both directions of crossing).

CKE Input

Clock Enable: CKE HIGH activates, and CKE LOW deactivates internal clock signals, and device

input buffers and ou tput drivers. Taki ng CKE LOW provides PRECHA R GE POWER DOWN and

SELF REFRESH oper ati on (all bank s idle ), or ACTIVE POWER DOWN (r ow ACT IVE in any ban k).

CKE is synchronous for POWER DOWN entry and exit, and for SELF REFRESH entry and exit..

CKE must be maintained high throughout READ and WRITE accesses. Input buffers, excluding

CK, CK ,CKE and OD T are disabled during POWER DOWN. Input buffers, exc luding CKE are dis-

abled during SELF REFRESH. CKE is an SSTL_18 input, but will detect an LVCMOS LOW level

after Vdd is applied.

CS Input Chip Select : Enables or di sables all inputs ex cept CK, CK, CKE, DQS and DM. All commands are

masked when CS is registered high. CS provides for external bank selection on systems with

multiple banks. CS is considered part of the command code.

ODT Input On Die Termination Control : ODT enables on die termination resistance internal to the DDR2

SDRAM. When enabled, on die termination is only applied to DQ, LDQS, /LDQS, UDQS, /UDQS,

LDM and UDM

RAS, CAS, WE Input Command Inputs: RAS, CAS and WE (along with CS) define the command being entered.

LDM, UDM Input

Input Data Mask : DM is an input mask signal for write data. Input Data is masked when DM is

sampled High coincident with that input data during a WRITE access. DM is sampled on both

edges of DQS , Alt h ough DM pi ns ar e in put only, the DM loadin g matches the DQ and DQS load-

ing.

BA0, BA1 Input Bank Address Inputs: BA0 and BA1 define to which bank an ACTIVE, Read, Write or PRE-

CHARGE command is being applied. Bank address also determines if the mode register or

extended mode register is to be accessed during a MRS or EMRS cycle.

A0 ~ A12 Input

Address Inputs: Provide the row address for ACTIVE commands, and the column address and

AUTO PRECHARGE bit for READ/WRITE commands to select one location out of the memory

array in the respective bank. A1 0 is sampled duri ng a precharge command to determine

whether the PRECHARGE applies to one bank (A10 LOW) or all banks (A10 HIGH). If only one

bank is to be prec harged, the bank is selected by BA0, BA1. The addr ess inputs also pro vide the

op code during MODE REGISTER SET commands.

DQ Input/Output Data input / out put : Bi-directional d a ta b us

(UDQS),(UDQS)

(LDQS),(LDQS)Input/Output

Data Strobe : Output with read data, input with write data. Edge aligned with read data, cen-

tered in write data. For the x16, LDQS correspond to the data on DQ0~DQ7; UDQS corre-

sponds to the data on DQ8~DQ15. The data strobes LDQS, UDQS may be used in single ended

mode or paired with optional complementary signals LDQS, UDQS to provide differential pair

signaling to the system during both reads and wirtes. An EMRS(1) control bit enables or dis-

ables all complementary data strobe signals.

NC No Connect : No internal electrical connection is present.

VDDQ Supply DQ Ground

VDDL Supply DLL Power Supply

VSSDL Supply DLL Ground

VDD Supply Power Supply

VSS Supply Ground

VREF Supply Reference voltage for inputs for SSTL interface.

In this data sheet, "differential DQS signals" refers to any of the following with A10 = 0 of EMRS(1)

x16 LDQS/LDQS and UDQS/UDQS

"single-ended DQS signals" refers to any of the following with A10 = 1 of EMRS(1)

x16 LDQS and UDQS

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Self

Idle

Setting

EMRS

Bank

Precharging

Power

Writing

ACT

RDA

Read

SRF

REF

CKEL

MRS

CKEH

CKEL

Write

Automatic Sequence

Command Sequence

RDA

WRA

Read

PR, PRA

PR

Refreshing

Down

Power

Down

Active

with

RDA

Reading

with

WRA

Active

Precharge

Reading

Writing

PR(A) = Precharge (All)

MRS = (Extended) Mode Register Set

SRF = Enter Self Refresh

REF = Refresh

CKEL = CKE low, enter Power Down

CKEH = CKE high, exit Power Down, exit Self Refresh

ACT = Activate

WR(A) = Write (with Autoprecharge)

RD(A) = Read (with Autoprecharge)

Note: Use caution with this diagram. It is indented to provide a floorplan of the possible state transitions

2.1 Simplified State Diagram

All banks

precharged

Activating

CKEH

Read

Write

CKEL

MRS

CKEL

Sequence

Initialization

OCD

calibration

CKEL

CKEL CKEL

AutoprechargeAutoprecharge PR, PRA PR, PRA

and the commands to control them, not all details. In particular situations involving more than one bank,

enabling/disabling on-die termination, Power Down enty/exit - among other things - are not captured

in full detail.

2. Functional Description

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2.2 Functional Block Diagram (16Mx16)

4Banks x 4Mbit x 16 I/O DDR2 SDRAM

Input Buffers & State Machine

Row

Pre

Decoders

Column

Pre Decoders

Self refresh

logic & timer

Internal Row

Counter

Row decoders

4Mx16 Bank3

4Mx16 Bank2

4Mx16 Bank1

4Mx16 Bank0

Column decoders

Memory

Cell

Array

refresh

Column

Active

CLK

CKE

CS

RAS

CAS

WE

U/LDM

Address

Registers

Column Add

Counter&latch

Mode

Register

Address buffers

A0

A1

A12

BA1

BA0

Row

Active

bank select

Sense Amp

& I/O Gate

4bit pre-fetch

Read Data

Register

4bit pre-fetch

Write Data

Register

Column Active

latch

Additive Latency

Output

Buffers

& ODT

refresh

Input

Buffers

DLL Clk OCD

Control

DQS

I/O Buffer

&ODT DQS

DQS

DLL

CLK

DS

DQ

0~15

64

16

ODT

DLL Clk OCD

Control

ODT

control ODT

control

ODT

control

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2.3 Basic Function & Operation of DDR2 SDRAM

Read and write accesses to the DDR2 SDRAM are burst oriented; accesses start at a selected location

and continue for a burst length of four or eight in a programmed sequence. Accesses begin with the regis-

tration of an Active command, which is then followed by a Read or Write command. The address bits reg-

istered coincident with the active command are used to select the bank and row to be accessed (BA0-BA1

select the bank; A0-A12 select the row). The address bits registered coincident with the Read or Write

command are used to select the starting column location for the burst access and to determine if the auto

precharge command is to be issued.

Prior to normal operation, the DDR2 SDRAM must be initialized. The following sections provide detailed

information covering device initialization, register definition, command descriptions and device operation.

2.3.1 Power up and Initialization

DDR2 SDRAMs must be powered up and initialized in a predefined manner. Operational pr ocedures other

than those specified may result in undefined operation.

Power-up and Initialization Sequence

The following sequence is required for POWER UP and Initialization.

1. Apply power and attempt to maintain CKE below 0.2*VDDQ and ODT*1 at a low state (all other inputs

may be undefined.)

- VDD, VDDL and VDDQ are driven from a single power converter output, AND

- VTT is limited to 0.95 V max, AND

- Vref tracks VDDQ/2.

or

- Apply VDD before or at the same time as VDDL.

- Apply VDDL before or at the same time as VDDQ.

- Apply VDDQ before or at the same time as VTT & Vref.

at least one of these two sets of conditions must be met.

2. Start clock and maintain stable condition.

3. For the minimum of 200 us after stable power and clock(CK, CK), then apply NOP or de select & take

CKE high.

4. Wait minimum of 400ns then issue precharge all command. NOP or deselect applied during 400ns

period.

5. Issue EMRS(2) command. (To issue EMRS(2) command, provide “Low” to BA0, “High” to BA1.)*2

6. Issue EMRS(3) command. (To issue EMRS(3) command, provide “High” to BA0 and BA1.)*2

7. Issue EMRS to enable DLL. (To issue "DLL Enab le" command, provide "Low" to A0, "High" to BA0 and

"Low" to BA1.)

8. Issue a Mode Register Set command for “DLL reset”.

(To issue DLL reset command, provide "High" to A8 and "Low" to BA0-1.)

9. Issue precharge all command.

10. Issue 2 or more au to -r ef re sh com m an ds .

11. Issue a mode register set command with low to A8 to initialize device operation. (i.e. to program oper-

ating parameters without resetting the DLL.)

12. At least 200 clocks after step 8, execute OCD Calibration ( Off Chip Driver impedance adjustment ).

If OCD calibration is not used, EMRS OCD Default command (A9=A8= A7=1) followed by EMRS OCD

Calibration Mod e Exit com m a nd (A 9= A8= A 7= 0) mus t be issued with other operating paramete rs of

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1HY5PS561621BFP

EMRS.

13. The DDR2 SDRAM is now ready for normal operation.

*1) To guarantee ODT off, VREF must be valid and a low level must be applied to the ODT pin.

*2) Sequence 5 and 6 may be performed between 8 and 9.

2.3.2 Programming the Mode and Extended Mode Registers

For application flexibility, burst length, burst type, CAS latency, DLL reset function, write recovery

time(tWR) are user defined variables and must be programmed with a Mode Register Set (MRS) com-

mand. Additio nally, DL L disa b le fu nct i on , drive r impedance, additive CAS latency, ODT(On Die Termina-

tion), single-ended strobe, and OCD(off chip driver impedance ad justment) are also user d efined variables

and must be programmed with an Extended Mode Register Set (EMRS) command. Contents of the Mode

Register(MR) or Extended Mode Registers(EMR(#)) can be altered by re-executing the MRS and EMRS

Commands. If the user chooses to modify only a subset of the MRS or EMRS variables, all variables must

be redefined when the MRS or EMRS commands are issued.

MRS, EMRS and Reset DLL do not affect array contents, which means reinitialization including those can

be executed any time after power-up without affecting arra y contents.

Initialization Sequence after Power Up

/CK

CK

CKE

Command PRE

ALL PRE

ALL

EMRS MRS REF REF MRS EMRS EMRS ANY

CMD

DLL

ENABLE DLL

RESET OCD

Default OCD

CAL. MODE

EXIT

Follow OCD

Flowchart

400ns tRFC tRFC

tRP tRP

tMRD tMRD tMRD tOIT

min. 200 Cycle

NOP

ODT

tCL

tCH

tIS

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1HY5PS561621BFP

2.3.2.1 DDR2 SDRAM Mode Register Set (MRS)

The mode register stores the data for controlling the various operating modes of DDR2 SDRAM. It controls

CAS latency, burst length, burst sequence, test mode, DLL reset, tWR and various vendor specific options to

make DDR2 SDRAM useful for various applications. The default value of the mode register is not defined,

therefore th e mode registe r must be w ritten afte r power- up for pr oper ope ration . The mo de regist er is written

by asserting low on CS , RAS, CAS, WE, BA0 and BA1, while controlling the state of address pins A0 ~ A15.

The DDR2 SDRAM should be in all bank precharge with CKE already high prior to writing into the mode reg-

ister. The mode register set command cycle time (tMRD) is required to complete the write operation to the

mode register. The mode register contents can be changed using the same command and clock cycle

requirements during normal operation as long as all banks are in the precharge state. The mode register is

divided into va rio us fiel ds depen din g on fu nctio nality. Bu rst leng th is de fined by A0 ~ A2 with options of 4 and

8 bit burst lengths. The burst length deco des are compatible with DDR SDRAM. Burst address sequence type

is defined by A3, CAS latency is defin ed by A4 ~ A6. T he DDR2 does n’t su pport half clo ck lat ency mode . A7

is used for test mode. A8 is used for DL L reset. A7 must be set to low for norma l MRS opera tion. Write re cov-

ery time tWR is defined by A9 ~ A11. Refer to the table for specific codes.

Address Field

CAS Latency

A6A5A4Latency

0 0 0 Reserved

0 0 1 Reserved

0 1 0 Reserved

0 1 1 Reserved

100 4

101 5

110 6

111 7

A7 mode

0Normal

1Test

A3Burst Type

0 Sequential

1 Interleave

A8DLL Reset

0No

1Yes

Mode Register

BA

1

BA

0

A

11

A

10

A

9

A

8

A

7

A

6

A

5

A

4

A

3

A

2

A

1

A

0

0TM CAS Latency BTDLL

0*

1

WR

Write recovery for autoprecharge

A11 A10 A9WR(cycles)*2

0 0 0 Reserved

001 2

010 3

011 4

100 5

101 6

110 7

1 1 1 Reserved

A

15

~ A

13

0 Burst Length

Burst Length

A2A1A0BL

0104

0118

*1: BA2 and A13~A15 are reserved for future use and must be programmed to 0 when setting the mode

register. BA2 and A13~A15 are not used for 256Mb

*2: WR(write recovery for autoprecharge) min is determined by tCK max and WR max is determined by tCK min.

WR in clock cycles is calculated by dividing tWR (in ns) by tCK (in ns) and rounding up to the next integer

(WR[cycles] = tWR(ns)/tCK(ns)). The mode register must be programmed to this value. This is also used with

tRP to determine tDAL.

BA

2

0*

1

BA1 BA0 MRS mode

00 MRS

01 EMRS(1)

1 0 EMRS(2): Reserved

1 1 EMRS(3): Reserved

A

12

PD

A12 Active power

down exit time

0 Fast exit(use tXARD)

1 Slow exit(use tXARDS)

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2.3.2.2 DDR2 SDRAM Extended Mode Register Set

EMRS(1)

The extended mode register(1 ) stores the data for enabling or disabling th e DLL, output driver strength, ad ditive latency,

ODT, DQS disable, OCD program, RDQS enable. The default value of the extended mode register(1) is not defined,

therefore the extended mo de register(1) must be written after power-up for prope r operation. The extended mode regis-

ter(1) is written by asserting low on CS, RAS, CAS, WE, high on BA0 and low on BA1, while controlling the states of

address pins A0 ~ A15. The DDR2 SDRAM should be in all bank precharge with CKE already high prior to writing into the

extended mode register(1). The mode register set command cycle time (tMRD) must be satisfied to complete the write

operation to the extended mode register(1). Mo de register conten ts can be changed using the same command and clock

cycle requirements during normal opera tion as long as al l b anks a re i n the precharge state. A0 is used for DLL ena ble or

disable. A1 is used for enab ling a half stren gth output drive r. A3~A5 determines the additive latency, A7~ A9 are use d for

OCD control , A10 is used for DQS disable. A2 and A6 are used for ODT setting.

DLL Enable/Disable

The DLL must be enabled for normal operation. DLL enable is required during power up initialization, and

upon returning to normal operation after having the DLL disabled. The DLL is automatically disabled when

entering self refresh operation and is automatically re-enabled upon exit of self refresh operation. Any time

the DLL is enabled (and subsequently reset), 200 clock cycles must occur before a Read command can be

issued to allow time for the internal clock to be synchronized with the external clock. Failing to wait for syn-

chroni zation to occur may res ult in a violation of the tAC or tDQSCK parameters.

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Address Field

0

Extended Mode Register

DLL

0*

1

D.I.C

BA

0

A

15 ~

A

13

A

11

A

10

A

9

A

8

A

7

A

6

A

5

A

4

A

3

A

2

A

1

A

0

A0DLL Enable

0 Enable

1 Disable

Additive latency

A5A4A3Additive Latenc y

000 0

001 1

010 2

011 3

100 4

101 5

1 1 0 Reserved

1 1 1 Reserved

a: When Adjust mode is issued, AL from previously set value must be applied.

b: After setting to default, OCD mode needs to be exited by setting A9-A7 to

000. Refer to the following 2.2.2.3 section for detailed information

A9 A8 A7 OCD Calibration Program

0 0 0 OCD Calibration mode exit; maintain setting

0 0 1 Drive(1)

0 1 0 Drive(0)

100

Adjust modea

111

OCD Calibration default b

OCD program1DQS Rtt

Rtt

A1 Output Driver

Impedence Control Driver

Size

0 Normal 100%

1 Weak 60%

A10 DQS

0 Enable

1 Disable

*1 : BA2 and A13~A15 are reserved for future use and must be programmed to 0 when setting the mode register.

BA

1

0

A6 A2 Rtt (NOMINAL)

0 0 ODT Disabled

0 1 75 ohm

1 0 150 ohm

1 1 50 ohm

BA1 BA0 MRS mode

00 MRS

01 EMRS(1)

1 0 EMRS(2): Reserved

1 1 EMRS(3): Reserved

BA

2

0*

1

EMRS(1) Programming

0

A

12

A12 Qoff (Optional)a

a. Outputs disabled - DQs, DQSs, DQSs.

This feature is used in conjunction with DIMM

IDD meaurements when IDDQ is not desired to

be included.

0 Output buffer enabled

1 Output buffer disabled

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EMRS(2)

The extended mode reg ister(2) contro ls refresh related features. Th e default value of the extended mode reg-

ister(2) is not defined, therefore the extended mode register(2) must be written after power-up for proper

operation. The extended mode register(2) is written by asserting low on /CS,/RAS,/CAS,/WE, high on BA1

and low on BA0, wh ile controling the st ates of address pin s A0~A15. The DDR2 SDRAM should be in a ll bank

precharge with CKE already high prior to writing into the extended mode register(2). Mode register contents

can be changed using the same command and clock cycle requirements during normal operation as long as

all bank are in the precharge state.

EMRS(2) Programming:

*1 : The rest bits in EMRS(2) is reserved for future use and all bits except A7, BA0 and BA1 must be

programmed to 0 when setting the mode register during initialization.

Due to the migration natur al, user nee ds to ensure th e DRAM part supp orts higher th an 85℃ Tcase tempera-

ture self-refresh entry. JEDEC standard DDR2 SDRAM Module user can look at DDR2 SDRAM Module SPD

fileld Byte 49 bit[0]. If the high temp erature self-refresh mode is supported then controller can set the EMRS2

[A7] bit to enable the self-refresh rate in case of higher than 85℃ temperature self-refresh operation. For the

lose part user, please refer to the Hynix web site(www.hynix.com) to check the h igh temperature se lf-refresh

rate availability. In order to save power consumption, DDR2 DRAM has Partial Array Self Refresh (PASR)

option. PASR includes 6 kinds of self refresh mode.

EMRS(3) Programming: Reserved

*

1

*1 : EMRS(3) is reserved for future use and all bits except BA0 and BA1 must be programmed to 0 when setting

the mode register during initialization.

Address Field

Extended Mode

0*

1

BA

0

A

15 ~

A

13

A

11

A

10

A

9

A

8

A

7

A

6

A

5

A

4

A

3

A

2

A

1

A

0

BA

1

BA

2

0*

1

A

12

SRF

0*

1

Register(2)

PASR

0*

1

BA

0

A

15 ~

A

13

A

11

A

10

A

9

A

8

A

7

A

6

A

5

A

4

A

3

A

2

A

1

A

0

1

BA

1

BA

2

0*

1

A

12

BA1 BA0 MRS mode

00 MRS

01 EMRS(1)

10 EMRS(2)

1 1 EMRS(3):Reserved

A7 Hign Temp

Self-refresh

Rate Enable

1Enable

0Disable

A2 A1 A0 Bank Refresh @ PASR

000All Bank

0 0 1 Half Array (BA[1:0] = 00 & 01)

0 1 0 Quarter Array (BA[1:0] = 00)

011Not defined

100

3/4 Quarter Array

(BA[1:0] = 01, 10 & 11)

101

Half Array (BA[1:0] = 10 & 11)

1 1 0 Quarter Array (BA[1:0] = 11)

111Not defined

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2.3.2.3 Off-Chip Driver (OCD) Impedance Adjustment

DDR2 SDRAM supports driver calibration feature and the flow chart below is an example of sequence. Every

calibration mode command should be followed by “OCD calibration mode exit” before any other command

being issued. MRS should be set before entering OCD impedance adjustment and ODT (On Die Termian-

tion) should be carefully controlled depending on system environment.

Start

EMRS: Drive(1)

DQ & DQS High; DQS Low

Test

EMRS :

Enter Adjust Mode

BL=4 code input to all DQs

Inc, Dec, or NOP

EMRS: Drive(0)

DQ & DQS Low; DQS High

Test

EMRS :

Enter Adjust Mode

BL=4 code input to all DQs

Inc, Dec, or NOP

EMRS: OCD calibration mode exit

End

ALL OK ALL OK

Need Calibration

EMRS: OCD calibration mode exit

MRS shoud be set before entering OCD impedance adjustment and ODT should

be carefully controlled depending on system environment

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Extended Mode Register Set for OCD impedance adjustment

OCD impedance adjustment can be done using the following EMRS mode. In drive mode all outputs are

driven out by DDR2 SDRAM and drive of RDQS is depedent on EMRS bit enabling RDQS operation. In

Drive(1) mode, all DQ, DQS (and RDQS) signals are driven high and all DQS signals are driven low. In

drive(0) mode, all DQ, DQS (and RDQS) signals are driven low and all DQS signals are driven high. In

adjust mode, BL = 4 of oper ation code data must be used. In case o f OCD calibration default, output driver

characteristics have a nominal impedance value of 18 ohms during nominal temperature and voltage con-

ditions. Output driver characteristics for OCD calibration default ar e specified in Table x. OCD applies only

to normal full strength output drive setting defined by EMRS(1) and if half strength is set, OCD default out-

put driver

characteristics are not applicable. When OCD calibration adjust mode is used, OCD default output driver

characteristics are not applicable. After OCD calibration is completed or driver strength is set to default,

subsequent EMRS commands not intended to adjust OCD characteristics must specify A9-A 7 as '000 ' in

order to maintain the default or calibrated value.

Off- Chip-Driver program

OCD impedance adjust

To adjust output driver impedance, controllers must issue the ADJUST EMRS command along with a 4bit

burst code to DDR2 SDRAM as in t able X. For this operation, Burst Length has to be set to BL = 4 via MRS

command before activating OCD and controllers must drive this burst code to all DQs at the same time.

DT0 in table X means all DQ bits at bit time 0, DT1 at bit time 1, and so forth. The driver ou tput imped ance

is adjusted for all DDR2 SDRAM DQs simultaneously and after OCD calibration, all DQs of a given DDR2

SDRAM will be adjusted to the same driver strength setting. The maximum step count for adjustment is 16

and when the limit is reached, further increment or decrement code has no effect. The default setting may

be any step within th e 1 6 step r ange. Wh en Adjust mode command is issued, AL from previously set value

must be applied

Table X : Off- Chip-Driver Program

A9 A8 A7 Operation

0 0 0 OCD calibration mode exit

0 0 1 Drive(1) DQ, DQS, (RDQS) high and DQS low

0 1 0 Drive(0) DQ, DQS, (RDQS) low and DQS high

1 0 0 Adjust mode

1 1 1 OCD calibration default

4bit burst code inputs to all DQs Operation

DT0 DT1 DT2 DT3 Pull-up driver strength Pull-down driver strength

0000

NOP (No operation) NOP (No operation)

0 0 0 1 Increase by 1 step NOP

0010

Decrease by 1 step NOP

0100

NOP Increase by 1 step

1000

NOP Decrease by 1 step

0101

Increase by 1 step Increase by 1 step

0110

Decrease by 1 step Increase by 1 step

1001

Increase by 1 step Decrease by 1 step

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1HY5PS561621BFP

For proper operation of adjust mode, WL = RL - 1 = AL + CL - 1 clocks and tDS/t DH shou ld be me t as th e

following timing diagram . For input dat a pa ttern for adjustment, DT0 - DT3 is a fixe d order and "not a ffected

by

MRS addressing mode (ie. sequential or interleave).

Drive Mode

Drive mode, both Drive(1) and Drive(0), is used for controllers to measure DDR2 SDRAM Driver

impedance. In this mode, all outputs are driven out tOIT after “enter drive mode” command and all output

drivers are turned-off tOIT after “OCD calibration mode exit” command as the following timing diagram.

1010

Decrease by 1 step Decrease by 1 step

Other Combinations Reserved

NOPNOP NOP NOP

EMRS

D

T0

CMD

CK

DQS_in

DQ_in

tDS tDH

WL

OCD adjust mode

OCD calibration mode exit

D

T1

D

T2

D

T3

WR

EMRS

NOP NOP

CK

DQS

DM

EMRSNOP NOP NOPEMRS

CMD

CK

DQS

DQ

Enter Drive mode OCD calibration mode exit

tOIT

Hi-Z

DQs high for Drive(1)

DQS high & DQS low for Drive(1), DQS low & DQS high for Drive(0)

Hi-Z

DQs low for Drive(0)

tOIT

CK

DQS

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2.3.2.4 ODT (On Die Termination)

On Die Termination (ODT) is a feature that allows a DRAM to tur n on/of f termination resist ance for ea ch DQ,

DQS/DQS, RDQS/RDQS, and DM signal for x4 x8 configuration s via the ODT control pin. For x16 configura-

tion ODT is applied to each DQ, UDQS/UDQS, LDQS/LDQS, UDM, and LDM signal via the ODT control pin.

The ODT feat ure is designed to improve signal integ r ity of the memory channel by allowing the DRAM con-

troller to independently turn on/off termination resistance for any or all DRAM devices.

The ODT function is supported for ACTIVE and STANDBY modes. ODT is turned off and not supported in

SELF REFRESH mode.

FUNCTIONAL REPRESENTATION OF ODT

Input

Buffer

DRAM

VSSQVSSQ

VDDQVDDQ

Rval2

Rval2Rval1

Rval1

sw1

sw2

Selection between sw1 or sw2 is determined by “Rtt (nominal)” in EMRS

Termination included on all DQs, DM, DQS, DQS, RDQS, and RDQS pins.

Switch sw1 or sw2 is enabled by ODT pin.

Target Rtt (ohm) = (Rval1) / 2 or (Rval2) / 2

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ODT timing for active/standby mode

ODT timing for powerdown mode

T0 T1 T2 T3 T4 T5

tAOND

CK

CKE

ODT

Internal

Term Res.

T6

tAOFD

tIS tIS

tAON,min tAON,max

tAOF,min tAOF,max

RTT

T0 T1 T2 T3 T4 T5

CK

CKE

ODT

Internal

Term Res.

T6

tIS tIS

tAONPD,min

tAOFPD,max

tAONPD,max

tAOFPD,min

RTT

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1HY5PS561621BFP

ODT timing mode switch at entering power down mode

T-5 T-4 T-3 T-2 T-1 T0

CK

T1

CKE

ODT

Internal

Term Res.

tIS

tAOFD

RTT

tIS

RTT

T2 T3 T4

ODT

Internal

Term Res.

Active & Standby

mode timings to

be applied.

Power Down

mode timings to

be applied.

tAOFPDmax

tIS

ODT

Internal

Term Res.

tIS

tAOND

RTT

tIS

RTT

ODT

Internal

Term Res.

Active & Standby

mode timings to

be applied.

Power Down

mode timings to

be applied.

tAONPDmax

tANPD

Entering Slow Exit Active Power Down Mode

or Precharge Power Down Mode.

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ODT timing mode switch at exiting power down mode

T0 T1 T4 T5 T6 T7

CK

T8

CKE

ODT

Internal

Term Res.

tIS

tAOFPDmax

RTT

tIS

RTT

T9 T10 T11

ODT

Internal

Term Res.

tAXPD

Active & Standby

mode timings to

be applied.

Power Down

mode timings to

be applied.

Exiting from Slow Active Power Down Mode

or Precharge Power Down Mode.

tAOFD

Internal

Term Res.

tIS

RTT

ODT

Active & Standby

mode timings to

be applied. tAOND

Internal

Term Res.

RTT

ODT

tAONPDmax

tIS

Power Down

mode timings to

be applied.

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1HY5PS561621BFP

2.4 Bank Activate Command

The Bank Activate command is issu ed by ho lding CAS and WE high with CS a nd RAS lo w at the rising edge

of the clock. The bank addresses BA0 ~ BA1 are used to select the desired bank. The row address A0

through A15 is u sed to determine which r ow to activate in the selected bank. The Bank Activate command

must be applied before any Read or Write operation can be executed. Immediately after the bank active

command, the DDR2 SDRAM can accept a read or write command on the following clock cycle. If a R/W

command is issued to a bank that has not satisfied the tRCDmin specification, then additive latency must be

programmed into the device to delay when the R/W com mand is internally issued to the device. The additive

latency value must be chosen to assure tRCDmin is satisfied. Additive latencies of 0, 1, 2, 3, 4 and 5 are

supported. Once a bank has been activated it must be precharged before another Bank Activate command

can be applied to the same bank. The bank active and precharge times are defined as tRAS and tRP,

respectively. The minimum time interval between successive Bank Activate commands to the same bank is

determined by the RAS cycle time of the device (tRC). The minimum time interval between Bank Activate

commands is tRRD.

Bank Activate Command Cycle: tRCD = 3, AL = 2, tRP = 3, tRRD = 2, tCCD = 2

ADDRESS

CK / CK

T0 T2T1 T3 Tn Tn+1 Tn+2 Tn+3

COMMAND

Bank A

Row Addr.

Bank A

Activate

Bank A

Col. Addr.

. . . . . . . . . .

Internal RAS-CAS delay (>= tRCDmin)

: “H” or “L” RAS Cycle time (>= tRC)

additive latency delay (AL)

Read

Bank B

Row Addr.

Bank B

Activate

Bank B

Col. Addr. Bank A

Bank A

Precharge

Bank B

Addr.

Bank B

Precharge

Bank A

Row Addr.

Activate

Bank A

RAS - RAS delay time (>= tRRD)Read Begins

tRCD =1

Addr.

Bank Active (>= tRAS)Bank Precharge time (>= tRP)

CAS-CAS delay time (tCCD)

Bank A

Post CAS Read

Bank B

Post CAS

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1HY5PS561621BFP

2.5 Read and Write Command

After a bank has been activated, a read or write cycle can be executed. This is accomplished by setting RAS

high, CS and CAS low at the clock’s rising edge. WE must also be d efin ed at this time to dete rmine whet her

the access cycle is a read operation (WE high) or a write operation (WE low).

The DDR2 SDRAM provides a fast column access operation. A single Read or Write Command will initiate a

serial read or write operation on successive clock cycles. The boundary of the burst cycle is strictly restricted

to specific segments of the page length. For example, the 32 Mbit x 4 I/O x 4 Ba nk chip ha s a page leng th of

2048 bits (defined by CA0-CA9, CA11). The page length of 2048 is divided into 512 or 256 uniquely addres-

sable boundary se gme nts dependin g on bur st length, 512 fo r 4 bit burst, 25 6 for 8 bit bur st re sp ectively. A 4-

bit or 8 bit burst operation will occur entirely within one of the 512 or 256 groups beginning with the column

address supplied to th e device du ring the Read or Write Comm and (CA0-CA9, CA1 1). The se cond , third and

fourth access will also occur within this group segment, however, the burst order is a function of the starting

address, and the burst sequence.

A new burst access must not interrupt the previous 4 bit burst operation in case of BL = 4 setting. However,

in case of BL = 8 setting, two cases of interrupt by a new burst access are allowed, one reads interrupted by

a read, the other writes interrupted by a write with 4 bit burst boundry respectively. The minimum CAS to

CAS delay is defined by tCCD, and is a minimum of 2 clocks for read or write cycles.

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1HY5PS561621BFP

2.5.1 Posted CAS

Posted CAS operation is supported to make command and data bus efficient for sustainable bandwidths in DDR2

SDRAM. In this operation, the DDR2 SDRAM allows a CAS read or write command to be issued immediately after the

RAS bank activate command (or any time during the RAS-CAS-delay ti me, tRCD, period). The command is held for the

time of the Additive Late ncy (AL) before it is issue d inside the devi ce. The Read L atency (RL) is controlled by the sum of

AL and the CAS latency (CL). Therefore if a user chooses to issue a R/W command before the tRCDmin, then AL (greater

than 0) must be written into the EMRS(1). The Write Latency (WL) is always defined as RL - 1 (read latency -1) where

read latency is defined as th e sum of additive latency p lus CAS latency (RL= AL+CL). Read or Write operations using AL

allow seamless bursts (refer to seamless operation timing diagram examples in Read burst and Wirte burst section)

Examples of posted CAS operatio n

Example 1 Read followed by a write to the same bank

[AL = 2 and CL = 3, RL = (AL + CL) = 5, WL = (RL - 1) = 4, BL = 4]

Example 2 Read followed by a write to the same bank

[AL = 0 and CL = 3, RL = (AL + CL) = 3, WL = (RL - 1) = 2, BL = 4]

0123456789101112

Active

A-Bank Read

A-Bank Write

A-Bank

Dout0 Dout1 Dout2

Dout3

Din0

Din1

Din2

Din3

CK/CK

CMD

DQS/DQS

DQ

AL = 2

-1

> = tRCD

CL = 3

> = tRAC

WL = RL -1 = 4

RL = AL + CL = 5

Active

A-Bank Read

A-Bank Write

A-Bank

Dout0 Dout1 Dout2

Dout3

Din0

Din1

Din2

Din3

AL = 0

> = tRCD

CL = 3

> = tRAC

WL = RL -1 = 2

RL = AL + CL = 3

0 1 2 3 4 5 6 7 8 9 10 11 12-1

CK/CK

CMD

DQS/DQS

DQ

Rev. 1.2/Aug. 2008 26

1HY5PS561621BFP

2.5.2 Burst Mode Operation

Burst mode operation is used to provide a constant flow of data to memory locations (write cycle), or from

memory locations (read cycle). The parameters that define how the burst mode will operate are burst

sequence and burst length. DDR2 SDRAM supports 4 bit burst and 8 bit burst modes only. For 8 bit burst

mode, full interleave address ordering is supported, however, sequential address ordering is nibble based for

ease of implementation. The burst type, either sequ ential or interleaved, is programmable and defined by the

address bit 3 (A3) of the MRS, which is similar to the DDR SDRAM operation. Seamless burst read or write

operations are supported. Unlike DDR devices, interruption of a burst read or write cycle during BL = 4 mode

operation is prohibited. However in case of BL = 8 mode, inte rruption of a burst read or write operation is lim-

ited to two cases, reads interrupted by a read, or writes interrupted b y a writ e. T her efore the Burst Stop co m -

mand is not supported on DDR2 SDRAM devices.

Burst Length and Sequence

Note: Page length is a function of I/O organization and column addressing

Burst Length Starting Address (A2 A1 A0) Sequential Addressing (decimal) Interleave Addressing (decimal)

4

0 0 0 0, 1, 2, 3 0, 1, 2, 3

0 0 1 1, 2, 3, 0 1, 0, 3, 2

0 1 0 2, 3, 0, 1 2, 3, 0, 1

0 1 1 3, 0, 1, 2 3, 2, 1, 0

8

0 0 0 0, 1, 2, 3, 4, 5, 6, 7 0, 1, 2, 3, 4, 5, 6, 7

0 0 1 1, 2, 3, 0, 5, 6, 7, 4 1, 0, 3, 2, 5, 4, 7, 6

0 1 0 2, 3, 0, 1, 6, 7, 4, 5 2, 3, 0, 1, 6, 7, 4, 5

0 1 1 3, 0, 1, 2, 7, 4, 5, 6 3, 2, 1, 0, 7, 6, 5, 4

1 0 0 4, 5, 6, 7, 0, 1, 2, 3 4, 5, 6, 7, 0, 1, 2, 3

1 0 1 5, 6, 7, 4, 1, 2, 3, 0 5, 4, 7, 6, 1, 0, 3, 2

1 1 0 6, 7, 4, 5, 2, 3, 0, 1 6, 7, 4, 5, 2, 3, 0, 1

1 1 1 7, 4, 5, 6, 3, 0, 1, 2 7, 6, 5, 4, 3, 2, 1, 0

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2.5.3 Burst Read Command

The Burst Read com man d is initiated by having CS and CAS low while holding RAS and WE high at the

rising edge of the clock. The address inputs dete rmine the starting column addr ess for the burst. The dela y

from the start of the command to when the data from the first cell appears on the outputs is equal to the

value of the read latency (RL). The data strobe output (DQS) is driven low 1 clock cycle before valid data

(DQ) is driven onto the data bus. The first bit of the burst is synchronized with the rising edge of the data

strobe (DQS). Each subsequent data-out appears on the DQ pin in phase with the DQS signal in a source

synchronous mann er. The RL is equal to an additive latency (AL) plus CAS latency (CL). The CL is d efined

by the Mode Register Set (MRS), similar to the existing SDR and DDR SDRAMs. The AL is defined by the

Extended Mode Register Set (1)(EMRS(1)).

DDR2 SDRAM pin timings are specified for eith er single ended mode or dif ferential mode dep ending on

the setting of the EMRS(1) “Enable DQS” mode bit; timing advantages of differential mode are realized in

system design. The method by which the DDR2 SDRA M pin tim ings ar e m easur ed is mod e de pen dent. In

single

ended mode, timing relationships are measured relative to the rising or falling edges of DQS crossing at

VREF. In differential mode, these timing relationships are measured relative to the crosspoint of DQS and

its complement, DQS. This distinction in timing methods is guaranteed by design and characterization.

Note that when diffe rential data strobe mode is disabl ed via the EMRS, the complement ary pin, DQS, must

be tied externally to VSS through a 20 ohm to 10 Kohm resistor to insure proper operation.

tCH tCL

CK

DQS/DQS

DQ

DQS

tRPST

Q

tRPRE

tDQSQmax

tQH tQH

tDQSQmax

Figure YY-- Data output (read) timing

QQQ

Burst Read Operation: RL = 5 (AL = 2, CL = 3, BL = 4)

CMD NOP NOP NOP NOP NOP NOP NOP

DQs

NOP

CK/CK

DOUT A

0

DOUT A

1

DOUT A

2

DOUT A

3

READ A

Posted CAS

AL = 2 CL =3

RL = 5

DQS/DQS

=< tDQSCK

T0 T2T1 T3 T4 T5 T6 T7 T8

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1HY5PS561621BFP

Burst Read Operation: RL = 3 (AL = 0 and CL = 3, BL = 8)

Burst Read followed by Burst Write: RL = 5, WL = (RL-1) = 4, BL = 4

The minimum time from the burst read command to the burst write command is defined by a read-to-write-

turn-around-time, which is 4 clocks in ca se of BL = 4 operation, 6 clocks in case of BL = 8 operation.

CMD NOP NOP NOP NOP NOP NOP NOP

DQs

NOP

CK/CK

DOUT A

0

DOUT A

1

DOUT A

2

DOUT A

3

READ A

CL =3

RL = 3

DQS/DQS

=< tDQSCK

T0 T2T1 T3 T4 T5 T6 T7 T8

DOUT A

4

DOUT A

5

DOUT A

6

DOUT A

7

CMD Post CAS NOP NOP NOP NOP NOP

DQ’s

NOP

CK/CK

T0 Tn-1T1 Tn Tn+1 Tn+2 Tn+3 Tn+4 Tn+5

DOUT A

0

DOUT A

1

DOUT A

2

DOUT A

3

DQS/DQS

DIN A

0

DIN A

1

DIN A

2

DIN A

3

READ A

WL = RL - 1 = 4

RL =5

Post CAS

WRITE A

tRTW (Read to Write turn around time)

NOP

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Seamless Burst Read Operation: RL = 5, AL = 2, and CL = 3, BL = 4

The seamless burst read operation is supported by enabling a read command at every other clock for BL = 4

operation, and every 4 clock for BL = 8 operation. This operation is allowed regardless of same or different

banks as long as the banks are activated.

CMD NOP NOP NOP NOP NOP NOP

DQs

NOP

CK/CK

T0 T2T1 T3 T4 T5 T6 T7 T8

DOUT A

0

DOUT A

1

DOUT A

2

DOUT A

3

READ A

Post CAS

AL = 2 CL =3

RL = 5

DQS/DQS

DOUT B

0

DOUT B

1

DOUT B

2

READ B

Post CAS

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1HY5PS561621BFP

Reads interrupted by a read

Burst read can only be interrupted by another read with 4 bit burst boundary. Any other case of read inter-

rupt is not allowed.

Read Burst Interrupt Timing Example: (CL=3, AL=0, RL=3, BL=8)

Note

1. Read burst interr up t fu nct i on is only allowe d on burst of 8. Burst interrupt of 4 is prohibited.

2. Read burst of 8 can only be interrupted by ano ther Read command. Read burst interruption by Write

command or Precharge command is prohibited.

3. Read burst interrupt must occur exactly two clocks after previous Read command. Any other Read

burst interrupt timings are prohibited.

4. Read burst interruption is allowed to any ban k inside DRAM.

5. Read burst with Auto Precharge enabled is not allowed to interrupt.

6. Read burst interruption is allowed by another Read with Auto Precharge command.

7. All command timing s are re fe renced to burst leng th set in the mode r egister . They ar e no t refer enced

to actual burst. For example, Minimum Read to Precharge timing is AL + BL/2 where BL is the burst

length set in the mode register and not the actual burst (which is shorter because of interrupt).

CK/CK

CMD

DQS/DQS

DQs

Read B

Read A NOP NOP NOP NOP NOP NOP NOP NOP

A0 A1 A2 A3 B0 B1 B2 B3 B4 B5 B6 B7

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2.5.4 Burst Write Operation

The Burst Write command is initiated by having CS, CAS and WE low while holding RAS high at the rising

edge of the clock. The address inputs determine the starting column address. Write latency (WL) is defined

by a read latency (RL) minus one and is equal to (AL + CL -1). A data strobe signal (DQS) should be driven

low (preamble) one clock prior to the WL. The first data bit of the burst cycle must be applied to the DQ pins

at the first rising edge of the DQS following the preamble. The tDQSS specification must be satisfied for write

cycles. The subsequent burst bit data are issued on successive edges of the DQS until the burst length is

completed, which is 4 or 8 bit burst. When the burst has finished, any additional data supplied to the DQ pins

will be ignored. The DQ Signal is ignored after the burst write operation is complete. The time from the com-

pletion of the burst write to bank precharge is the write recovery time (WR).

DDR2 SDRAM pin timings are specified for either single ended mode or differential mode depending on the

setting of the EMRS “Enable DQS” mode bit; timing advantages of differential mode are realized in system

design. The method by which the DDR2 SDRAM pin timings are measured is mode dependent. In single

ended mode, timing relationships are measured relative to the rising or falling edges of DQS crossing at VREF.

In differential mode, these timing relationships are measured re lative to the crosspoint of DQS and its com-

plement, DQS. This distinction in timing meth ods is guaranteed by design and characterization. Note that

when dif ferential data strobe mode is disabled via the EMRS, the complementary pin, DQS, must be tied

externally to VSS through a 20 ohm to 10 Kohm resistor to insure proper operation.

Burst Write Operation: RL = 5, WL = 4, tWR = 3 (AL=2, CL=3), BL = 4

tDS tDS tDH

tWPRE tWPST

tDQSH tDQSL

DQS

D

DMin

DQS/

DQ

DM

tDH

Data input (write) timing

DMin DMin DMin

DDD

DQS

CMD NOP NOP NOP NOP NOP NOP

DQs

NOP

CK/CK

T0 T2T1 T3 T4 T5 T6 T7 Tn

WRITE A

Posted CAS

WL = RL - 1 = 4

DQS/DQS

> = WR

DIN A

0

DIN A

1

DIN A

2

DIN A

3

Precharge

Completion of

the Burst Wr ite

< = tDQSS

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Burst Write Operation: RL = 3, WL = 2, tWR = 2 (AL=0, CL=3), BL = 4

Burst Write followed by Burst Read: RL = 5 (AL=2, CL=3), WL = 4, tWTR = 2, BL = 4

The minimum number of clock from the burst write command to the burst read command is [CL - 1 + BL/2 +

tWTR]. This tWTR is not a write recovery time (tWR ) but the time required to transfer the 4bit write data from

the input buffer into sense amplifiers in the array. tWTR is defined in AC spec table of this data sheet.

CMD NOP NOP NOP NOP Precharge NOP

DQs

NOP

CK/CK

T0 T2T1 T3 T4 T5 T6 T7 Tn

WRITE A

WL = RL - 1 = 2

DQS/

< = tDQSS

> = WR

DIN A

0

DIN A

1

DIN A

2

DIN A

3

Bank A

Completion of

the Burst Write

Activate

> = tRP

DQS

CMD NOP NOP NOP NOP

DQ

CK/CK

T0 T2T1 T3 T4 T5 T6 T7 T8

DIN A

0

DIN A

1

DIN A

2

DIN A

3

NOP

DQS/

DOUT A

0

WL = RL - 1 = 4

Post CAS

READ A

NOP

RL =5

AL = 2 CL = 3

NOP NOP

Write to Read = CL - 1 + BL/2 + tWTR

> = tWTR

T9

DQS

DQS DQS

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Seamless Burst Write Operation: RL = 5, WL = 4, BL = 4

The seamless burst write operation is supported by enabling a write command every other clock for BL = 4

operation, every four clocks for BL = 8 operation. This operation is allowed regardless of same or different

banks as long as the banks are activated

CMD NOP NOP NOP NOP NOP NOP

DQ’s

NOP

CK/CK

T0 T2T1 T3 T4 T5 T6 T7 T8

DIN A

0

DIN A

1

DIN A

2

DIN A

3

Write A

Post CAS

WL = RL - 1 = 4

DQS/

Write B

Post CAS

DIN B

0

DIN B

1

DIN B

2

DIN B

3

DQS

DQSDQS

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Writes interrupted by a write

Burst write can only be interr upted by another write with 4 bit burst boundary. Any other case of write inter-

rupt is not allowed.

Write Burst Interrupt Timing Example: (CL=3, AL=0, RL=3, WL=2, BL=8)

Notes:

1. Write burst interrup t function is only allowed on burst of 8. Burst interr up t of 4 is proh ibit ed .

2. Write burst of 8 can only be interrupted by another Write command. Write burst interruption by Read

command or Precharge command is prohibited.

3. Write burst interrupt must occur exactly two clocks after previous Write command. Any other Write

burst interrupt timings are prohibited.

4. Write burst interrup tion is allowed to any bank inside DRAM.

5. Write burst with Auto Precharge enabled is not allowed to interrupt.

6. Write burst interruption is allowed by another Write with Auto Precharge command.

7. All command timing s are re fe renced to burst leng th set in the mode r egister . They ar e no t refer enced

to actual burst. For example, minimum Write to Precharge timing is WL+BL/2+tWR where tWR starts

with the rising clock after the un-interrupted burst end and not from the end of actual burst end.

CK/CK

CMD

DQS/DQS

DQs

NOP NOP NOP NOP NOP NOP NOP NOP

A0 A1 A2 A3 B0 B1 B2 B3 B5 B6 B7

Write BWrit e A

B4

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2.5.5 Write Data Mask

One write data mask (DM) pin for each 8 data bits (DQ) will be supported on DDR2 SDRAMs, Consis tent

with the implementation on DDR SDRAMs. It has identical timings on write operations as the data bit s, and

though used in a uni-directional manner, is internally loaded identically to data bits to insure matched sys-

tem timing. DM of x4 and x16 bit organization is not used during read cycles. However DM of x8 bit organi-

zation can be used as RDQS during read cycles by EMRS(1) settng.

Data Mask Timing

DQS/

DQ

DM

tDS tDH tDS tDH

Write

CK

COMMAND

DQS/DQS

DQ

DM

Case 2 : max tDQSS

DQS/DQS

DQ

DM

tDQSS

tDQSS tWR

Data Mask Function, WL=3, AL=0, BL = 4 shown

Case 1 : min tDQSS

DQS

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2.6 Precharge Operation

The Precharge Co mmand is used to precharge or close a bank that has b een activated. The Pr echarge Com-

mand is triggered when CS, RAS and WE are low and CAS is high at the rising edge of the clock. The Pre-

charge Command can be used to precharge each bank independently or all banks simultaneously. Three

address bits A10, BA0 and BA1 for 256Mb are used to define which bank to precharge when the command is

issued.

Bank Selection for Precharge by Address Bits

Burst Read Operation Followed by Precharge

Minium Read to precharge command spacing to the same bank = AL + BL/2 clocks

For the earliest possible precharge, the precharge command may be issued on the rising edge which is

“Additive latency(AL) + BL/2 clocks” after a Read command. A new bank active (command) may be issued to

the same bank after the RAS precharge time (tRP). A precharge command cannot be issued until tRAS is sat-

isfied.

The minimum Read to Precharge spacing has also to satisfy a minimum analog time from the rising clock

egde that initiates the last 4-bit prefetch of a Read to Precharge command. This time is called tRTP (Read to

Precharge). For BL = 4 this is the time from the actual read (AL after th e Re ad co mm a nd ) to Pre ch ar g e co m-

mand. For BL = 8 this is the time from AL + 2 clocks after the Read to the Precharge command.

A10 BA1 BA0 Precharged Bank(s) Remarks

LOW LOW LOW Bank 0 only

LOW LOW HIGH Bank 1 only

LOW HIGH LOW Bank 2 only

LOW HIGH HIGH Bank 3 only

HIGH DON’T CARE DON’T CARE All Banks

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Example 1: Burst Read Operation Followed by Precharge:

RL = 4, AL = 1, CL = 3, BL = 4, tRTP <= 2 clocks

Example 2: Burst Read Operation Followed by Precharge:

RL = 4, AL = 1, CL = 3, BL = 8, tRTP <= 2 clocks

CMD NOP NOP Precharge NOP

DQ’s

NOP

CK/CK

DOUT A

0

DOUT A

1

DOUT A

2

DOUT A

3

READ A

Post CAS

RL =4

DQS/DQS

Active

Bank A

> = tRP

NOP

CL =3

NOP

> = tRAS

T0 T2T1 T3 T4 T5 T6 T7 T 8

AL + BL/2 clks

AL = 1 CL = 3

> = tRTP

CMD NOP NOP NOP NOP

DQ’s

NOP

CK/CK

DOUT A

0

DOUT A

1

DOUT A

2

DOUT A

3

READ A

Post CAS

RL =4

DQS/DQS

Precha r g e A NOP

T0 T2T1 T3 T4 T5 T6 T7 T 8

AL + BL/2 clks

AL = 1 CL = 3

> = tRTP

DOUT A

4

DOUT A

5

DOUT A

6

DOUT A

7

first 4-bit pre fe tch second 4-bi t prefetch

NOP

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Example 3: Burst Read Operation Followed by Precharge:

RL = 5, AL = 2, CL = 3, BL = 4, tRTP <= 2 clocks

Example 4: Burst Read Operation Followed by Precharge:

RL = 6, AL = 2, CL = 4, BL = 4, tRTP <= 2 clocks

CMD NOP NOP NOP NOP

DQ’s

Precharge A

CK/CK

DOUT A

0

DOUT A

1

DOUT A

2

DOUT A

3

READ A

Posted CAS

AL = 2 CL =3

RL =5

DQS/DQS

Activate

Bank A

> = tRP

NOP

CL =3

NOP

> = tRAS

T0 T2T1 T3 T4 T5 T6 T7 T 8

AL + BL/2 clks

> = tRTP

CMD NOP NOP NOP NOP

DQ’s

Precharge A

CK/CK

DOUT A

0

DOUT A

1

DOUT A

2

DOUT A

3

READ A

Post CAS

AL = 2 CL =4

RL = 6

DQS/DQS

Activate

Bank A

> = tRP

NOP

CL =4

NOP

> = tRAS

T0 T2T1 T3 T4 T5 T6 T7 T 8

AL + BL/2 Clks

> = tRTP

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Example 5: Burst Read Operation Followed by Precharge:

RL = 4, AL = 0, CL = 4, BL = 8, tRTP > 2 clocks

CMD NOP NOP NOP NOP

DQ’s

Precha r g e A

CK/CK

DOUT A

0

DOUT A

1

DOUT A

2

DOUT A

3

READ A

Post CAS

AL = 0 CL =4

RL = 4

DQS/DQS

Activate

Bank A

> = tRP

NOP NOP

> = tRAS

T0 T2T1 T3 T4 T5 T6 T7 T 8

AL + 2 Clks + max{tRTP;2 tCK}*

* : rounded to next interger

DOUT A

4

DOUT A

5

DOUT A

6

DOUT A

7

first 4-bit prefetch second 4-bit pref etch

> = tRTP

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Burst Write followed by Precharge

Minium Write to Precharge Command spacing to the same bank = WL + BL/2 clks + tWR

For write cycles, a delay must be satisfied from the completion of the last burst write cycle until the Precharge

Command can be issued. This delay is known as a write recovery time (tWR) referenced from the completion

of the burst write to the precharge command. No Precharge command should be issued prior to the tWR delay.

Example 1: Burst Write followed by Precharge: WL = (RL-1) =3

Example 2: Burst Write followed by Precharge: WL = (RL-1) = 4

CMD NOP NOP NOP NOP NOP NOP

DQs

NOP

CK/CK

T0 T2T1 T3 T4 T5 T6 T7 T 8

DIN A

0

DIN A

1

DIN A

2

DIN A

3

WRITE A

Posted CAS

WL = 3

DQS/DQS > = WR

Precharge A

Completion of the Burst Write

CMD NOP NOP NOP NOP NOP NOP

DQs

NOP

CK/CK

T0 T2T1 T3 T4 T5 T6 T7 T 9

DIN A

0

DIN A

1

DIN A

2

DIN A

3

WRITE A

Posted CAS

WL = 4

DQS/DQS > = tWR

Precharge A

Completion of the Burst Write

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2.7 Auto Precharge Operation

Before a new row in an active bank can be opened, the active bank must be precharged using either the

Precharge command or the auto-precharge function. When a Read or a Write command is given to the

DDR2 SDRAM, the CAS timing accepts one extra address, column address A10, to allow the active bank

to automatically begin precharge at the earliest possible moment during the burst read or write cycle. If

A10 is low when the READ or WRITE command is issued, then normal Read or Write burst operation is

executed and the bank remains active at the completion of the burst sequence. If A10 is high when the

Read or Write command is issued, then the auto-precharge function is engaged. During au to-precharge, a

Read command will execute as normal with the exception that the active bank will begin to precharge on

the rising edge which is CAS latency (CL) clock cycles before the end of the read burst.

Auto-precharge is also implemented during Write commands. The precharge operation engaged by the

Auto precharge command will not begin until the last data of the burst write sequence is properly stored in

the memory array.

This feature allows the precharge operation to be partially or completely hidden during burst read cycles

(dependent upon CAS latency) thus improving system performance for random data access. The RAS

lockout circuit internally delays the Precharge operation until the array restore operation has been com-

pleted (tRAS satisfied) so that the auto precharge command may be issued with any read or write com-

mand.

Burst Read with Auto Precharge

If A10 is high when a Read Command is issued, the Read with Auto-Precharg e function is engaged. The

DDR2 SDRAM starts an Au to Precharge operation o n the rising edge which is (AL + BL/2) cycles later tha n

the read with AP command if tRAS(min) and tRTP are satisfied.

If tRAS(min) is not satisfied at the edge, the start point of auto-precharge operation will be delayed until

tRAS(min) is satisfied.

If tRTP(min) is not satisfied at the edge, the start point of auto-precharge operation will be delayed until

tRTP(min) is satisfied.

In case the internal precharg e is pushed out by tRTP, tRP starts at the point where the internal precharge

happens (not at the next r ising clock edge after this event). So for BL = 4 the minimu m time from Read_AP

to the next Activate command becomes AL + (tRTP + tRP)* (see example 2) for BL = 8 the time from

Read_AP to the next Activate is AL + 2 + (tRTP + tRP)*, where “ *” means: “rounde d up to the next intege r”.

In any event internal precharge does not start earlier than two clocks after the last 4-bit prefetch.

A new bank activate (command) may be issued to the same bank if the following two conditions are satis-

fied simultaneously.

(1) The RAS precharge time (tRP) has been satisfied from the clock at which the auto precharge begins.

(2) The RAS cycle time (tRC) fro m the previous bank activation has been satisfied.

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Example 1: Burst Read Operation with Auto Precharge:

RL = 4, AL = 1, CL = 3, BL = 8, tRTP <= 2 clocks

Example 2: Burst Read Operation with Auto Precharge:

RL = 4, AL = 1, CL = 3, BL = 4, tRTP > 2 clocks

CMD NOP NOP NOP NOP

DQ’s

NOP

CK/CK

DOUT A

0

DOUT A

1

DOUT A

2

DOUT A

3

READ A

Post CAS

RL =4

DQS/DQS

T0 T2T1 T3 T4 T5 T6 T7 T 8

AL + BL/2 clks

AL = 1 CL = 3

> = tRTP

DOUT A

4

DOUT A

5

DOUT A

6

DOUT A

7

first 4-bit pre fe tch second 4-bi t prefetch

NOP

tRTP

NOP

Precharge begins here

Activate

Bank A

> = tRP

Autoprecharge

CMD NOP NOP NOP NOP

DQ’s

NOP

CK/CK

DOUT A

0

DOUT A

1

DOUT A

2

DOUT A

3

READ A

Post CAS

RL =4

DQS/DQS

T0 T2T1 T3 T4 T5 T6 T7 T 8

> = AL + tRTP + tRP

AL = 1 CL = 3

4-bit prefetch

NOP

tRTP

NOP

Precharge begins here

Activate

Bank A

Autoprecharge

tRP

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Example 3: Burst Read with Auto Precharge Followed by an activation to the Same

Bank(tRC Limit):

RL = 5 (AL = 2, CL = 3, internal tRCD = 3, BL = 4, tRTP <= 2 clocks)

Example 4: Burst Read with Auto Precharge Followed by an Activation to the Same

Bank(tRP Limit):

RL = 5 (AL = 2, CL = 3, internal tRCD = 3, BL = 4, tRTP <= 2 clocks)

CMD NOP NOP NOP NOP NOP

DQ’s

NOP

CK/CK

T0 T2T1 T3 T4 T5 T6 T7 T8

DOUT A

0

DOUT A

1

DOUT A

2

DOUT A

3

READ A

Post CAS

AL = 2 CL =3

RL = 5

DQS/DQS

Activate

Bank A

> = tRP

A10 = 1

Auto Precharge Begins

CL =3

> = tRC

NOP

> = tRAS(min)

CMD NOP NOP NOP NOP NOP

DQ’s

NOP

CK/CK

T0 T2T1 T3 T4 T5 T6 T7 T8

DOUT A

0

DOUT A

1

DOUT A

2

DOUT A

3

READ A

Post CAS

AL = 2 CL =3

RL = 5

DQS/DQS

Activate

Bank A

> = tRP

A10 = 1

Auto Precharge Begins

CL =3

> = tRC

NOP

> = tRAS(min)

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Burst Write with Auto-Precharge

If A10 is high when a Write Command is issued, the Write with Auto-Precharge function is engaged. The

DDR2 SDRAM automatically begins precharge operation after the completion of the burst write plus write

recovery time (tWR). The bank undergoing auto-precharge from the completion of the write burst may be

reactivated if the following two conditions are satisfied.

(1) The data-in to bank activate delay time (WR + tRP) has been satisfied.

(2) The RAS cycle time (tRC) from the previous bank activation has been satisfied.

Burst Write with Auto-Precharge (tRC Limit): WL = 2, tWR =2, BL = 4, tRP=3

Burst Write with Auto-Precharge (tW R + tRP): WL = 4, tWR =2, BL = 4, tRP=3

CMD NOP NOP NOP NOP NOP Bank A

DQs

NOP

CK/CK

T0 T2T1 T3 T4 T5 T6 T7 Tm

DIN A

0

DIN A

1

DIN A

2

DIN A

3

WRA BankA

Post CAS

WL =RL - 1 = 2

DQS/DQS

A10 = 1

Auto Precharge Begins

NOP

> = WR

Completion of the Burst Write

Active

> = tRP

> = tRC

CMD NOP NOP NOP NOP NOP Bank A

DQs

NOP

CK/CK

T0 T4T3 T5 T6 T7 T8 T9 T12

DIN A

0

DIN A

1

DIN A

2

DIN A

3

WRA Bank A

Post CAS

WL =RL - 1 = 4

DQS/DQS

A10 = 1

Auto Precharge Begins

NOP

> = WR

Completion of the Burst Write

Active

> = tRP

> = tRC

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2.8 Refresh Commands

DDR2 SDRAMs require a refresh of a ll rows in any rolling 64 ms interval. Eac h refresh is generated in one of

two ways: by an explicit Auto-Refresh command, or by an internally timed event in SELF REFRESH mode.

Dividing the number of device rows into the rolling 64ms interval, tREFI, which is a guideline to controllers for

distributed refresh timing. For example, a 256Mb DDR2 SDRAM has 8192 rows resulting in a tREFI of 7.8㎲.

To avoid excessive interruptions to the memory controller, higher density DDR2 SDRAMS maintain 7.8㎲

average refresh time and perform multiple internal refresh bursts. In these cases, the refresh recovery times,

tRFC an tXSNR are extended to accomodate these internal operations.

2.8.1 Auto Refresh Command

AUTO REFRESH is used during normal operation of the DDR2 SDRAM. This command is nonpe rsistent, so it

must be issued each time a refresh is required. The refresh addressing is generated by the internal refresh

controller. This makes the address bits “Don’t Care” during an AUTO REFRESH command.

When CS, RAS and CAS are held low and WE high at the rising edge of th e clock, the chip enters the Refresh

mode (REF). All banks of the DDR2 SDRAM must be precharged and idle for a minimum of the Precharge

time (tRP) before the Refresh command (REF) can be applied. An address counter, internal to the device,

supplies the bank address during the refresh cycle. No control of the external address bus is required once

this cycle has started.

When the refresh cycle has completed, all banks of the DDR2 SDRAM will be in the precharged (idle) state. A

delay between the Refresh command (REF) and the next Activate command or subsequent Refresh com-

mand must be greater than or equal to the Refresh cycle time (tRFC).

To allow for improved efficiency in scheduling andswitching between tasks, some flexibility in the absolute

refresh interval is provided. A maximum of eight Refresh commands can be posted to any given DDR2

SDRAM, meanin g th at the ma xim u m ab so lut e int er va l between any Refresh command and the next Refresh

command is 9 * tREFI.

2.8.2 Self Refresh Operation

The Self Refresh command can be used to retain data in the DDR2 SDRAM, even if the rest of the system is

powered down. When in the Self Refresh mod, the DDR2 SDRAM retains data without external clocking.

The DDR2 SDRAM device has a built-in timer to accommodate Self Refresh operation. The Self Refresh

Command is defined b y having CS, RAS, CAS and CKE held low with WE high at the rising edge of the clock.

ODT must be turned off before issuing Self Refresh command, by either driving ODT pin low or using EMRS

command. Once the Command is registe red, CKE must be held low to keep the device in Self Refresh mode.

The DLL is automatically disabled u pon enter ing Self Re fresh and is automatically en abled upon existing Self

Refresh. When the DDR2 SDRAM has entered Self Refresh mode all of the external signals except CKE, are

“don’t care”. Th e DRAM initiates a minimu m of one Auto Refresh command internally withi n tCKE period once

it enters Self Refresh mod e.The clock is internally disabled during Self Refresh Operation to save power. The

minimum time that the DDR2 SDRAM must remain in Self Refresh mode is tCKE. The user may change the

external clock frequency or halt the external clock one clock after Self-Refresh entry is registered, however,

the clock must be restarted and stable before the device can exit Self Refresh operation.

CMD NOP REF REF NOP ANY

CK/CK

T0 T2T1 T3 Tm Tn Tn + 1

Precharge

CKE

NOP

> = tRP > = tRFC > = tRFC

High

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The procedure for existing Self Refresh requires a sequence of commands. First, the clock must be stable

prior to CKE going back HIGH. Once Self Refresh Exit command is registered, a delay equal or longer than

the tXSNR or tXSRD must be satisfied before a valid command can be issued to the device. CKE must

remain high for the entire Self Refresh exit period tXSRD for proper operation. Upon exit from Self Refresh,

the DDR2 SDRAM can be put back into Self Refresh mode afte r tXSRD expires.NOP or desele ct commands

must be registered on each positive clock edge during the Self Refresh exit interval. ODT should also be

turned off during tXSRD.

The Use of Self Refresh mode introduce the possibility that an internally timed refresh event can be missed

when CKE is raised for exit from Self Refresh mode. Upon exit from Self Refresh, the DDR2 SDRAM requires

a minimum of one extra auto refresh command before it is put back into Self Refresh mode.

- Device must be in the “All banks idle” state prior to entering Self Refresh mode.

- ODT must be turned off tAOFD before entering Self Refresh mode, and can be turned on again

when tXSRD timing is satisfied.

- tXSRD is applied for a Read or a Read with autoprecharge command

- tXSNR is applied for any command except a Read or a Read with autoprecharge command.

CMD

CK

T0 T2T1 Tm Tn

CKE

T3 T4 T5

ODT

Self

Refresh

T6

NOP

tAOFD

CK

> = tXSNR

> = tXSRD

tRP*

Valid

tCK

tCH tCL

tIS tIS

tIS

tIS tIH

NOP NOP

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2.9 Power-Down

Power-down is synchronously entered when CKE is registered low (along with Nop or Deselect command). CKE

is not allowed to go low while mode register or extended mode register command time, or read or write operation

is in progress. CKE is allowed to go low while any of other operations such as row activation, precharge or auto-

precharge, or auto-refresh is in progress, but power-down IDD spec will not be applied until finishing those opera-

tions. Timing diagrams are shown in the following pages with details for entry into power down.

The DLL should be in a locked state when power-down is entered. Otherwise DLL should be reset after exiting

power-down mode for proper read operation.

If power-down occurs when all banks are idle, this mode is referred to as precharge power-down; if power-down

occurs when there is a row active in any bank, this mode is referred to as active power-down. Entering power-

down deactivates the input and output buffers, excluding CK, CK, ODT and CKE. Also the DLL is disabled upon

entering precharge power-down or slow exit active power-down, but the DLL is kept enabled during fast exit

active power-down. In power-down mode, CKE low and a stable clock signal must be maintained at the inputs of

the DDR2 SDRAM, and ODT should be in a valid state but all other input signals are “Don’t Care”. CKE low must

be maintained until tCKE has been satisfie d. Power-down duration is limited by 9 times tREFI of the device.

The power-down state is synchronously exited when CKE is registered high (along with a Nop or Deselect com-

mand). CKE high must be m aintained until tCKE has be en satisfied. A valid, executable command can be applied

with power-down exit latency, tXP, tXARD, or tXARDS, after CKE goes high. Power-down exit latency is defined

at AC spec table of this data sheet.

Basic Power Down Entry and Exit timing diagram

tIS

CK/CK

CKE

C

ommand

VALID NOP VALID

Don’t Care

NOP

tXP, tXARD,

Enter Power-Down mode

tCKE

tIH

tCKE tXARDS

VALID

tIH

Exit Power-Down mode

tIS tIH

tCKE

tIH

VALID

tIS

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CK

CMD

CKE

DQ

DQS

CMD

CKE

DQ

DQS

CMD

CKE

DQ

DQS

CMD

CKE

DQ

DQS

RDA

RDABL=8

PRE

AL + BL/2

with tRTP = 7.5ns

& tRAS min satisfied

AL + BL/2

with tRTP = 7.5ns

& tRAS min satisfied

Read to power down entry

Read with Autoprecharge to power down entry

CK

Start internal precharge

AL + CL

CKE should be kept high until the end of burst operation.

AL + CL

BL=4

CKE should be kept high

until the end of burst operati on.

AL + CL

T0 Tx Tx+2 Tx+3 Tx+4 Tx+5 Tx+6T1 T2 Tx+1 Tx+7 Tx+8 Tx+9

Q Q Q Q

Q Q Q Q Q Q Q Q

CKE should be kept high until the end of burst operation.

until the end of burst operation.

Q Q Q Q Q Q Q Q

RD BL=4

RD BL=8

Read operation starts with a read command and

Q Q Q Q

T0 Tx Tx+2 Tx+3 Tx+4 Tx+5 Tx+6T1 T2 Tx+1 Tx+7 Tx+8 Tx+9

DQS

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CMD

CKE

DQ

DQS

CMD

CKE

DQ

DQS

T0 Tm+1 Tm+3 Tx Tx+1 Tx+2 TyT1 Tm Tm+2 Ty+1 Ty+2 Ty+3

WR

BL=8

CMD

CKE

DQ

DQS

CMD

CKE

DQ

DQS

T0 Tm+1 Tm+3 Tx Tx+1 Tx+2 Tx+3T1 Tm Tm+2 Tx+4 Tx+5 Tx+6

WRA

BL=8

PRE

D D D D

D D D D D D D D

tWTR

WR*1

D D D D

D D D D D D D D WR*1

Write to power down entry

Write with Autoprecharge to power down entry

CK

WL

BL=4

WL

T0 Tm+1 Tm+3 Tm+4 Tm+5 Tx Tx+1T1 Tm Tm+2 Tx+2 Tx+3 Tx+4

CK

* 1: WR is programmed through MRS

T0 Tm+1 Tm+3 Tm+4 Tm+5 Tx Tx+1T1 Tm Tm+2 Tx+2 Tx+3 Tx+4

DQS

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CMD

CKE

CMD

CKE

T0 T3 T5 T6 T7 T8 T9T1 T2 T4 T10

CMD

CKE

CMD

CKE

CKE can go to low one clock after an Active command

PR or

MRS or

PRA

EMRS

REF

ACT

tMRD

Refresh command to power down entry

Active command to power down entry

Precharge/Precharge all command to power down entry

MRS/EMRS command to power down entry

CK

CKE can go to low one clock after a Precharge or Precharge all command

CKE can go to low one clock after an Auto-refresh command

T11

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2. 10 Asynchronous CKE Low Event

DRAM requires CKE to be maintained “HIGH” for all valid operations as defined in this data sheet. If CKE asyn-

chronously drops “LOW” during any valid operation DRAM is not guaranteed to preserve the contents of array. If

this event occurs, memory controller must satisfy DRAM timing specification tDelay before turning off the clocks.

Stable clocks must exist at the input of DRAM before CKE is raised “HIGH” again. DRAM must be fully re-initial-

ized (steps 4 thru 13) as described in initializaliation sequence. DRAM is ready for normal operation after the ini-

tialization sequence. See AC timing parametric ta ble for tDelay specification

tCK

CK

CK#

tDelay

CKE

CKE asynchronously drops low Clocks can be turned

off after this point

Stable clocks

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Input Clock Frequency Change during Precharge Power Down

DDR2 SDRAM input clock frequency can be changed under following condition:

DDR2 SDRAM is in precharged power down mode. ODT must be turned off and CKE must be at logic LOW level.

A minimum of 2 clocks must be waited after CKE goes LOW before clock frequency may change. SDRAM input

clock frequency is allowed to change only within minimum and maximum operating frequency specified for the

particular speed grade. During input clock frequency change, ODT and CKE must be held at stable LOW levels.

Once input clock frequency is changed, stable new clocks must be provided to DRAM before precharge power

down may be exited and DLL must be RESET via EMRS after precharge power down exit. Depending on new

clock frequency an additional M RS co mma nd may n eed to be issu ed to ap pr opriate ly se t th e WR, CL et c.. Dur ing

DLL re-lock period, ODT mus t remain off. Afte r the DLL lock time, the DRAM is ready to operate with new clock

frequency.

CK

CKE

T0 T4 Tx+1 Ty Ty+1 Ty+2T1 T2 Tx

CK

Valid

DLL

NOP

200 Clocks

Frequency Change

Ty+3 Tz

NOP NOP NOP NOP

RESET

tRP

Clock Frequency Change in Precharge Power Down Mode

tXP

Occurs here

tAOFD

Stable new clock

before power down exit

ODT is off during

DLL RESET

Minmum 2 clocks

required before

changing frequency

ODT

CMD

Ty+4

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2.11 No Operation Command

The No Operation comma nd shou ld be us ed in cases wh en the DDR2 SDRAM is in an idle or a wait state.

The purpose of the No Operation command (NOP) is to prevent the DDR2 SDRAM from registering any

unwanted commands between operations. A No Operation command is registered when CS is low with

RAS, CAS, and WE held high at the rising edge of the clock. A No Operation command will not terminate a

previous operation that is still executing, such as a burst read or write cycle.

2.12 Deselect Command

The Deselect command performs the same function as a No Opera tion command. Deselect command

occurs when CS is brought high at the rising edge of the clock, the RAS, CAS, and WE signals become

don’t cares.

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3. Truth Tables

3.1 Command truth table.

Function

CKE

CS RAS CAS WE BA0

BA1 A15-A11 A10 A9 - A0 Notes

Cycle

(Extended) Mode Register Set H H L L L L BA OP Code 1,2

Refresh (REF) H H L L L H X X X X 1

Self Refresh Entry H L L L L H X X X X 1

Self Refresh Exit L H HXXX

XXXX1,7

LHHH

Single Bank Precharge H H L L H L BA X L X 1,2

Precharge all Banks H H L L H L X X H X 1

Bank Activate H H L L H H BA Row Address 1,2

Write H H L H L L BA Column L Column 1,2,3,

Write with Auto Precharge H H L H L L BA Column H Column 1,2,3,

Read H H L H L H BA Column L Column 1,2,3

Read with Auto-Precharge H H L H L H BA Column H Column 1,2,3

No Operation H X L H H H X X X X 1

Device Deselect H X H X X X X X X X 1

Power Down Entry H L HXXX

XXXX1,4

LHHH

Power Down Exit L H HXXX

XXXX1,4

LHHH

1. All DDR2 SDRAM commands are defined by states of CS, RAS, CAS , WE and CKE at the rising edge of the clock.

2. Bank addesses BA0, BA1(BA) determine which bank is to be operated upon. For (E)MRS BA selects an (Extended) Mode Regis-

ter.

3. Burst reads or writes at BL=4 cannot be terminated or interrupted. See sections "Reads interrupted by a Read" and "Writes inter-

rupted by a Write" in section 2.2.4 for details.

4. The Power Down Mode does not perform any refresh operations. The duration of Power Down is therefore limited by the refresh

requirements outlined in section 2.2.7.

5. The state of ODT does not affect the states described in this table. The ODT function is not available during Self Refresh. See

section 2.2.2.4.

6. “X” means “H or L (but a defined logic leve l)”.

7. Self refresh exit is asynchronous.

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3.2 Clock Enable (CKE) Truth Table for Synchronous Transitions

Current State 2

CKE Command (N) 3

RAS, CAS, WE, CS Action (N) 3Notes

Previous Cycle 1

(N-1) Current Cycle 1

(N)

Power Down L L X Maintain Power-Down 11, 13, 15

L H DESELECT or NOP Power Down Exit 4, 8, 11,13

Self Refresh L L X Maintain Self Refresh 11, 15

L H DESELECT or NOP Self Refresh Exit 4, 5,9

Bank(s) Active H L DESELECT or NOP Active Power Down Entry 4,8,10,11,13

All Banks Idle H L DESELECT or NOP Precharge Power Down Entry 4, 8, 10,11,13

H L REFRESH Self Refresh Entry 6, 9, 11,13

H H Refer to the Command Truth Table 7

Notes:

1. CKE (N) is the logic state of CKE at clock edge N; CKE (N–1) was the state of CKE at the previous clock edge.

2. Current state is the state of the DDR SDRAM immediately prior to clock edge N.

3. COMMAND (N) is the command registered at clock edge N, and ACTION (N) is a result of COMMAND (N).

4. All states and sequences not shown are illegal or reserved unless explicitely described elsewhere in this document.

5. On Self Refresh Exit DESELECT or NOP commands must be issued on every clock edge occurring during the tXSNR period.

Read commands may be issued only after tXSRD (200 clocks) is satisfied.

6. Self Refresh mode can only be entered from the All Banks Idle state.

7. Must be a legal command as defined in the Command Truth Table.

8. Valid commands for Power Down Entry and Exit are NOP and DESELECT only.

9. Valid commands for Self Refresh Exit are NOP and DESELECT only.

10. Power Down and Self Refresh can not be entered while Read or Write operations, (Extended) Mode Register Set operations or

Precharge operations are in progress. See section 2.2.9 "Power Down" and 2.2.8 "Self Refresh Command" for a detailed list of

restrictions.

11. Minimum CKE high time is three clocks.; minimum CKE low time is three clocks.

12. The state of ODT does not affect the states described in this table. The ODT function is not available during Self Refresh. See

section 2.2.2.4.

13. The Power Down does not perform any refresh operations. The duration of Power Down Mode is therefore limited by the refresh

requirements outlined in section 2.2.7.

14. CKE must be maintained high while the SDRAM is in OCD calibration mode .

15. “X” means “don’t care (including floating around VREF)” in Self Refresh and Power Down. However ODT must be driven high or

low in Power Down if the ODT fucntion is enabled (Bit A2 or A6 set to “1” in EMRS(1) ).

3.3 Data Mask Truth Table

Name (Functional) DM DQs Note

Write enable LValid1

Write inhibit HX1

1. Used to mask write data, provided coinsident with the corresponding data

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4.1 Absolute Maximum DC Ratings

4.2 Operating Temperature Condition

4.3 Thermal Characteristics

Symbol Parameter Rating Units Notes

VDD Voltage on VDD pin relative to Vss - 1.0 V ~ 2.3 V V 1

VDDQ Voltage on VDDQ pin relative to Vss - 0.5 V ~ 2.3 V V 1

VDDL Voltage on VDDL pin relative to Vss - 0.5 V ~ 2.3 V V 1

VIN, VOUT Voltage on any pin r elative to Vss - 0.5 V ~ 2.3 V V 1

TSTG Storage Temperature -55 to +100 °C 1

II Input leakage current; any input 0V VIN VDD; all

other balls not under test = 0V) -2 uA ~ 2 uA uA

IOZ Output leakage current; 0V VOUT VDDQ; DQ and

ODT disabled -5 uA ~ 5 uA

1. Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a

stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational

sections of this specification is not implied. Exposure to absolute maximum rating conditio ns for extended periods may affect reli-

ability.

Symbol Parameter Rating Units Notes

Toper Operating Temperature 0 to 85 °C 1,2

1. Operating Temperature is the case surface temperature on the center/top side of the DRAM. For the measurement conditions,

please refer to JESD51-2 standard.

2. The operatin temperature range are the temperature where all DRAM specification will be supported. Outside of this temperature

rang, even it is still within the limit of stress condition, some deviation on portion of operation specification may be required. During

operation, the DRAM case temperature must be maintained between 0 ~ 85°C under all other specification parameters. However ,

in some applications, it is desirable to operate the DRAM up to 95°C case temperature. Therefore 2 spec options may exist.

1) Supporting 0 - 85°C with full JEDEC AC & DC specifications. This is the minimum requirements for all oprating temperature options.

2) Supporting 0 - 85°C and being able to extend to 95°C with doubling auto-refresh commands in frequency to a 32 ms

period(tRFI=3.9㎲).

Note; Self-refresh period within the above DRAM is hard coded at 64ms(tREFI= 7.8㎲). Therfore, it is imperative that the system ensures

the DRAM is at or below 85°C case temperature before initiating self-refresh operation.

1. Measurement procedures for each parameter must follow standard procedures defined in the current JEDEC JESD-51 standared.

2. Theta_JA and Theta_JC must be measured with the high effective thermal conductivity test board defined in JESD51-7

3. Airflow information must be deocumented for Theta_JA.

4. Theta_JA should only be used for comparing the thermal performance of signle packages and not for system related junction.

5. Theta_JA is the natural convection junction-to-ambient air thermal resistance measured in one cubic foot sealed enclosure

as described in JESD-51. The environment is sometimes referred to as “still-air” although natural convection causes the air to move.

6. Theta_JC case surface is defined as the “outside surface of the package (case) closest to the chip mounting area when that same

surface is properly hear sunk” so as to minimize temperature variation across that surface.

7. Test condition : Voltage 2.1V(Maximum voltage) / Frequency : 500Mhz

PARAMETER Description Value UNIT NOTES

TC Case Temperature 115.0 °C7

TJ Junction Temperature 125.1 °C7

Theta_JA Thermal resistance junction to ambient 62.6 °C/W 1,2,3,4,5,7

Theta_JC Thermal resistance junction to case 16.7 °C/W 1,2,6,7

4. Operating Conditions

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5.1 DC Operation Conditions

5.1.1 Recommended DC Operating Conditions (SSTL_1.8)

5.1.2 ODT DC electrical characteristics

Note 1: Test condition for Rtt measurements

Measurement Definition for Rtt(eff): Apply VIH (ac) and VIL (ac) to test pin separately, then measure current I(VIH

(ac)) and I( VIL (ac)) respectively. VIH (ac), VIL (ac), and VDDQ values defined in SSTL_18

Measurement Definition for VM : Measurement Voltage at test pin(mid point) with no load.

Symbol Parameter Rating Units Notes

Min. Typ. Max.

VDD Supply Voltage 1.9 2.0 2.1 V 5

VDDL Supply Voltage for DLL 1.9 2.0 2.1 V 4, 5

VDD Supply Voltage 1.7 1.8 2.1 V 6

VDDL Supply Voltage for DLL 1.7 1.8 2.1 V 4, 6

VDDQ Supply Voltage for Output 1.9 2.0 2.1 V 4, 5

VDDQ Supply Voltage for Output 1.7 1.8 2.1 V 4, 6

VREF Input Reference Voltage 0.49*VDDQ 0.50*VDDQ 0.51*VDDQ mV 1, 2

VTT Termination Voltage VREF-0.04 VREF VREF+0.04 V 3

There is no specific device VDD supply voltage requirement for SSTL-1.8 compliance. However under all conditions VDDQ must

be less than or equal to VDD.

1. The value of VREF may be selected by the user to provide optimum noise margin in the system. Typically the value of VREF is

expected to be about 0.5 x VDDQ of the transmitting device and VREF is expected to track variations in VDDQ.

2. Peak to peak ac noise on VREF may not exceed +/-2% VREF (dc).

3. VTT of transmitting device must track VREF of receiving device.

4. VDDQ tracks with VDD, VDDL tracks with VDD. AC parameters are measured with VDD, VDDQ and VDDL tied together

5. 600/500Mhz support

6. 500/450/400/350Mhz support

PARAMETER/CONDITION SYMBOL MIN NOM MAX UNITS NOTES

Rtt effective impedance value for EMRS(A6,A2)=0,1; 75 ohm Rtt1(eff) 60 75 90 ohm 1

Rtt effective impedance value for EMRS(A6,A2)=1,0; 150 ohm Rtt2(eff) 120 150 180 ohm 1

Rtt effective impedance value for EMRS(A6, A12)=1,1 ; 50ohm Rtt3(eff) 40 50 60 ohm 1

Deviation of VM with respect to VDDQ/2 delta VM -6 6 % 1

Rtt(eff) = VIH (ac) - VIL (ac)

I(VIH (ac)) - I(VIL (ac))

5. AC & DC Operating Conditons

delta VM = 2 x Vm

VDDQ x 100%

- 1

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5.2.1 Input DC Logic Level

5.2.2 Input AC Logic Level

Notes :

1. Supports 500/450/400/350MHz at 1.8V

2. Supports 600/500MHz at 2.0V

5.2.3 AC Input Test Conditions

Notes:

1. Input waveform timing is referenced to the input signal crossing through the VREF level applied to the device under test.

2. The input signal minimum slew rate is to be maintained over the range from VREF to VIH(ac) min for rising edges and the range

from VREF to VIL(ac) max for falling edges as shown in the below figure.

3. AC timings are referenced with input waveforms switching from VIL(ac) to VIH(ac) on the positive transitions and VIH(ac) to

VIL(ac) on the negative transitions.

Symbol Parameter Min. Max. Units Notes

VIH(dc) dc input logic high VREF + 0.125 + 0.3 V

VIL(dc) dc input logic low - 0.3 VREF - 0.125 V

Symbol Parameter Min. Max. Units Notes

VIH (ac) ac input logic high VREF + 0.250 - V 1

VIL (ac) ac input logic low -VREF - 0.250 V 1

VIH (ac) ac input logic high VREF + 0.350 - V 2

VIL (ac) ac input logic low -VREF - 0.350 V 2

Symbol Condition Value Units Notes

VREF Input reference voltage 0.5 * VDDQ V1

VSWING(MAX) Input signal maximum peak to peak swing 1.0 V 1

SLEW Input signal minimum slew rate 1.0 V/ns 2, 3

VDDQ

VIH(ac) min

VIH(dc) min

VREF

VIL(dc) max

VIL(ac) max

VSS

< Figure : AC Input Test Signal Waveform >

V

SWING(MAX)

delta TRdelta TF

V

REF

-

VIL

(ac)

max

delta TF

Falling Slew = Rising Slew = V

IH(ac)

min - V

REF

delta TR

5.2 DC & AC Logic Input Levels

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5.2.4 Differential Input AC logic Level

1. VIN(DC) specifies the allowable DC execution of each input of differential pair such as CK, CK, DQS, DQS, LDQS, LDQS, UDQS and

UDQS.

2. VID(DC) specifies the input differential voltage |VTR -VCP | required for switching, where VTR is the true input (such as CK, DQS, LDQS

or UDQS) level and VCP is the complementary input (such as CK, DQS, LDQS or UDQS) level. The minimum value is equal to VIH(DC) - V

IL(DC).

Notes:

1. VID(AC) specifies the input differential voltage |VTR -VCP | required for switching, where VTR is the true input signal (such as CK, DQS,

LDQS or UDQS) and VCP is the complementary input signal (such as CK, DQS, LDQS or UDQS). The minimum value is equal to V IH(AC)

- V IL(AC).

2. The typical value of VIX(AC) is expected to be about 0.5 * VDDQ of the transmitting device and VIX(AC) is expected to track variations in

VDDQ . VIX(AC) indicates the voltage at whitch differential input signals must cross.

5.2.5 Differential AC output parameters

Notes:

1. The typical value of VOX(AC) is expected to be about 0.5 * V DDQ of the transmitting device and VOX(AC) is expected to track variations

in VDDQ . VOX(AC) indicates the voltage at whitch differential output signals must cross.

Symbol Parameter Min. Max. Units Notes

VID (ac) ac differential input voltage 0.5 VDDQ + 0.6 V 1

VIX (ac) ac differential cross point voltage 0.5 * VDDQ - 0.175 0.5 * VDDQ + 0.175 V 2

Symbol Parameter Min. Max. Units Notes

VOX (ac) ac differential cross point voltage 0.5 * VDDQ - 0.125 0.5 * VDDQ + 0.125 V 1

VDDQ

Crossing point

VSSQ

VTR

VCP

VID VIX or VOX

< Differential signal levels >

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5.2.6 Overshoot/Undershoot Specification

AC Overshoot/Undersho ot Spe cifi ca ti on for Ad dre ss and Control Pins A0-A15, BA0-BA1, CS, RAS, CAS, W E,

CKE, ODT

Parameter Specification

Maximum peak amplitude allowed for overshoot area (See Figure 1): 0.9V

Maximum peak amplitude allowed for undershoot area (See Figure 1): 0.9V

Maximum overshoot area above VDD (See Figure1). 0.45 V-ns

Maximum undershoot area below VSS (See Figure 1). 0.45 V-ns

AC Overshoot/Undershoot Specification for Cl oc k , Data, St ro be , an d Ma sk Pins DQ, DQS, DM , CK, CK

Parameter Specification

Maximum peak amplitude allowed for overshoot area (See Figure 2): 0.9V

Maximum peak amplitude allowed for undershoot area (See Figure 2): 0.9V

Maximum overshoot area above VDDQ (See Figure 2). 0.23 V-ns

Maximum undershoot area below VSSQ (See Figure 2). 0.23 V-ns

Overshoot Area

Maximum Amplitude

VDD

Undershoot Area

Maximum Amplitude

VSS

Volts

(V)

Figure 1: AC Overshoot and Undersho ot Definition for Address and Control Pins

Time (ns)

Overshoot Area

Maximum Amplitude

VDDQ

Undershoot Area

Maximum Amplitude

VSSQ

Volts

(V)

Figure 2: AC Overshoot and Undershoot Definition for Clock, Data, Strob e, and Mask Pins

Time (ns)

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Power and ground clamps are required on the following input only pins:

1. BA0-BA1

2. A0-A15

3. RAS

4. CAS

5. WE

6. CS

7. ODT

8. CKE

V-I Characteristics table for input only pins with clamps

Voltage across

clamp(V) Minim um Power Clamp

Current (mA) Minimum Ground

Clamp Current (mA)

0.0 0 0

0.1 0 0

0.2 0 0

0.3 0 0

0.4 0 0

0.5 0 0

0.6 0 0

0.7 0 0

0.8 0.1 0.1

0.9 1.0 1.0

1.0 2.5 2.5

1.1 4.7 4.7

1.2 6.8 6.8

1.3 9.1 9.1

1.4 11.0 11.0

1.5 13.5 13.5

1.6 16.0 16.0

1.7 18.2 18.2

1.8 21.0 21.0

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5.3 Output Buffer Levels

5.3.1 Output AC Test Conditions

5.3.2 Output DC Current Drive

5.3.3 OCD defalut characteristics

Note

1: Absolute Specifications (0°C ≤ TCASE ≤ +95°C; VDD = +1.8V ±0.1V, VDDQ = +1.8V ±0.1V)

2: Impedance measurement condition for output source dc current: VDDQ = 1.7V; VOUT = 1420mV;

(VOUT-VDDQ)/Ioh must be less than 23.4 ohms for values of VOUT between VDDQ and VDDQ-

280mV. Impedance measurement condition for output sink dc current: VDDQ = 1.7V; VOUT = 280mV;

VOUT/Iol must be less than 23.4 ohms for values of VOUT between 0V and 280mV.

3: Mismatch is absolute value between pull-up and pull-dn, both are measured at same temperature and

voltage.

4: Slew rate measured from vil(ac) to vih(ac).

5: The absolute value of the slew ra te as measure d from DC to DC is equal to or gre ater than the slew rate

as measured from AC to AC. This is guaranteed by design and characterization.

6: DRAM output slew rate specification Table.

Symbol Parameter SSTL_18 Class II Units Notes

VOH Minimum Required Output Pull-up under AC Test Load VTT + 0.603 V

VOL Maximum Required Output Pull-down under AC Test Load VTT - 0.603 V

VOTR Output Timing Measurement Reference Level 0.5 * VDDQ V1

1. The VDDQ of the device under test is referenced.

Symbol Parameter SSTl_18 Class II Units Notes

IOH(dc) Output Minimum Source DC Current - 13.4 mA 1, 3, 4

IOL(dc) Output Minimum Sink DC Current 13.4 mA 2, 3, 4

1. VDDQ = 1.7 V; VOUT = 1420 mV. (VOUT - VDDQ)/IOH must be less than 21 ohm for values of VOUT between VDDQ and VDDQ - 280

mV.

2. VDDQ = 1.7 V; VOUT = 280 mV. VOUT/IOL must be less than 21 ohm for values of VOUT between 0 V and 280 mV.

3. The dc value of VREF applied to the receiving device is set to VTT

4. The values of IOH(dc) and IOL(dc) are based on the conditions given in Notes 1 and 2. They are used to test device drive current

capability to ensure VIH min plus a noise margin and VIL max minus a noise margin are delivered to an SSTL_18 receiver. The

actual current values are derived by shifting the desired driver operating point (see Section 3.3) along a 21 ohm load line to define

a convenient driver current for measurement.

Description Parameter Min Nom Max Unit Notes

Output impedance 12.6 18 23.4 ohms 1,2

Pull-up and pull-down

mismatch 0 4 ohms 1,2,3

Output slew rate Sout 1.5 - 5 V/ ns 1 ,4,5,6,7

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5.4 Default Output V-I characteristics

DDR2 SDRAM output driver characteristics are defined for full strength default operation as selected by the

EMRS1 bits A7- A9 = ‘1 11’. The above Figures show the driver char acteristics graphically, and table s show the

same data in tabular format suitable for input into simulation tools.

5.4.1 Full Strength Default Pulldown Driver Characteristics

Pulldown Current (mA)

Voltage (V) Minimum (23.4 Ohms) Nominal Default

Low (18 ohms) Nominal Default

High (18 ohms) Maximum (12.6 Ohms)

0.2 8.5 11.3 11.8 15.9

0.3 12.1 16.5 16.8 23.8

0.4 14.7 21.2 22.1 31.8

0.5 16.4 25.0 27.6 39.7

0.6 17.8 28.3 32.4 47.7

0.7 18.6 30.9 36.9 55.0

0.8 19.0 33.0 40.9 62.3

0.9 19.3 34.5 44.6 69.4

1.0 19.7 35.5 47.7 75.3

1.1 19.9 36.1 50.4 80.5

1.2 20.0 36.6 52.6 84.6

1.3 20.1 36.9 54.2 87.7

1.4 20.2 37.1 55.9 90.8

1.5 20.3 37.4 57.1 92.9

1.6 20.4 37.6 58.4 94.9

1.7 20.6 37.7 59.6 97.0

1.8 37.9 60.9 99.1

1.9 101.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.1

1.2

1.3

1.4

1.5

1.6

1.7

1.8

1.9

VOUT to VSSQ (V)

0

20

40

60

80

100

120

Pulldown current (mA)

Maximum

Nominal

Default

High

Nominal

Default

Low

Minimum

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5.4.2 Full Strength Default Pullup Driver Characteristics

DDR2 Default Pullup Characteristics for Full Strength Output Driver

Pu llup Current (mA)

Voltage (V) Minimum (23.4 Ohms) Nominal Default

Low (18 ohms) Nominal Default

High (18 ohms) Maximum (12.6 Ohms)

0.2 -8.5 -11.1 -11.8 -15.9

0.3 -12.1 -16.0 -17.0 -23.8

0.4 -14.7 -20.3 -22.2 -31.8

0.5 -16.4 -24.0 -27.5 -39.7

0.6 -17.8 -27.2 -32.4 -47.7

0.7 -18.6 -29.8 -36.9 -55.0

0.8 -19.0 -31.9 -40.8 -62.3

0.9 -19.3 -33.4 -44.5 -69.4

1.0 -19.7 -34.6 -47.7 -75.3

1.1 -19.9 -35.5 -50.4 -80.5

1.2 -20.0 -36.2 -52.5 -84.6

1.3 -20.1 -36.8 -54.2 -87.7

1.4 -20.2 -37.2 -55.9 -90.8

1.5 -20.3 -37.7 -57.1 -92.9

1.6 -20.4 -38.0 -58.4 -94.9

1.7 -20.6 -38.4 -59.6 -97.0

1.8 -38.6 -60.8 -99.1

1.9 -101.1

0.20.3

0.40.5

0.60.7

0.80.9

1.01.1

1.21.3

1.41.5

1.61.7

1.81.9

VDDQ to VOUT (V)

-120

-100

-80

-60

-40

-20

0

P ullup curren t (mA )

Minimum

Nomi nal

Default

Low

Nominal

Default

High

Maximum

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5.4.3 Calibrated Output Driver V-I Characteristics

DDR2 SDRAM output driver characteristics are defined for full strength calibrated operation as selected by

the procedure in OCD imp edance adju stment. Th e below Tables show the dat a in tabular format suit a ble for

input into simulation tools. The nomina l points represent a device at exactly 18 ohms. The nominal low and

nominal high values represent the range that can be achieved with a maximum 1.5 ohm step size with no

calibration error at the exact nominal conditions only (i.e. perfect calibration procedure, 1.5 ohm maximum

step size guaran te e d by spe cific ation). Real system calibration error needs to be added to these values. It

must be understood that these V-I curves as represented here or in supplier IBIS models need to be

adjusted to a wider range as a result of any system calibration error. Since this is a system specific phe-

nomena, it cannot be quantified here. The values in the calibrated tables represent just the DRAM portion

of uncertainty while looking at one DQ only. If the calibration procedure is used, it is possible to cause the

device to operate out side th e bound s of the d efault device characteristics t able s and figures. In such a situ-

ation, the timing parameters in the specification cannot be guaranteed. It is solely up to the system applica-

tion to en sure that the device is calibra ted betw een the m inimum a nd maximum default va lues at a ll times.

If this can’t be guaranteed by the system calibration procedure, re-calibration policy, and uncertainty with

DQ to DQ variation, then it is recommended that only the default values be used. The nominal maximum

and minimum values represent the change in impedance from nominal low and high as a result of voltage

and temperature change from the nominal condition to the maximum and minim um cond itio ns. If ca librated

at an extreme condition, the amount of variation could be as much as from the nominal minimum to the

nominal maximum or vice versa. The driver characteristics evaluation conditions are:

Nominal 25 oC (T case), VDDQ = 1.8 V, typical process

Nominal Low and Nominal High 25 oC (T case), VDDQ = 1.8 V, any process

Nominal Minimum TBD oC (T case), VDDQ = 1.7 V, any process

Nominal Maximum 0 oC (T case), VDDQ = 1.9 V, any process

Full Strength Calibrated Pulldown Driver Characteristics

Full Strength Calibrated Pullup Driver Characteristics

Calibrated Pulldown Current (mA)

Voltage (V) Nominal Minimum

(21 ohms) Nominal Low (18.75

ohms) Nominal (18 ohms) Nominal High (17.25

ohms) Nominal Maximum (15

ohms)

0.2 9.5 10.7 11.5 11.8 13.3

0.3 14.3 16.0 16.6 17.4 20.0

0.4 18.7 21.0 21.6 23.0 27.0

Calibrated Pullup Curr ent ( mA)

Voltage (V) Nominal Minimum

(21 ohms) Nominal Low (18.75

ohms) Nominal (18 ohms) Nominal High (17.25

ohms) Nominal Maximum (15

ohms)

0.2 -9.5 -10.7 -11.4 -11.8 -13.3

0.3 -14.3 -16.0 -16.5 -17.4 -20.0

0.4 -18.7 -21.0 -21.2 -23.0 -27.0

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5.5 Input/Output Capacitance

Parameter Symbol 300MHz / 400MHz Units

Min Max

Input capacitance, CK and CK CCK 1.0 2.0 pF

Input capacitance delta, CK and CK CDCK x0.25 pF

Input capacitance, all other input-only pins CI 1.0 2.0 pF

Input capacitance delta, all other input-only pins CDI x0.25 pF

Input/output capacitance, DQ, DM, DQS, DQS CIO 2.5 3.5 pF

Input/output capacitance delta, DQ, DM, DQS, DQS CDIO x0.5 pF

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6.1 IDD Specifications

Symbol 16 222 25 28 Units

IDD0 115 110 105 100 95 mA

IDD1 125 120 115 110 105 mA

IDD2P 88888 mA

IDD2N 6055535045 mA

IDD3P F4035333025 mA

S2525252525 mA

IDD3N 8070656055 mA

IDD4W 300 250 225 200 175 mA

IDD4R 275 250 225 200 175 mA

IDD5 135 130 128 125 123 mA

IDD6 88888 mA

IDD7 300 260 240 220 210 mA

6. IDD Specifications & Measurement Conditions

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6.2 IDD Meauarement Conditions

Note:

1. IDD specifications are tested after the device is properly initialized

2. Input slew rate is specified by AC Parametric Test Condition

3. IDD parameters are specified with ODT disabled.

4. Data bus consists of DQ, DM, DQS, DQS, RDQS, RDQS, LDQS, LDQS, UDQS, and UDQS. IDD values must be met with all combina-

tions of EMRS bits 10 and 11.

5. Definitions for IDD

LOW is defined as Vin ≤ VILAC(max)

HIGH is defined as Vin ≥ VIHAC(min)

STABLE is defined as inputs stable at a HIGH or LOW level

FLOATING is defined as inputs at VREF = VDDQ/2

SWITCHING is defined as:

inputs changing between HIGH and LOW every other clock cycle (once per two clocks) for address and control signals, and

input s changing between HIGH and LOW every other data transfer (once per clock) for DQ signals not including masks or strobes.

Symbol Conditions Units

IDD0 Operating one bank active-precharge current; tCK = tCK(IDD), tRC = tRC(IDD), tRAS = tRAS-

min(IDD);CKE is HIGH, CS is HIGH between valid commands;Address bus inputs are SWITCHING;Data bus

inputs are SWITCHING mA

IDD1 Operating one bank active-read-precharge curren ; IOUT = 0mA;BL = 4, CL = CL(IDD), AL = 0;

tCK = tCK(IDD), tRC = tRC (IDD), tRAS = tRASmin(IDD), tRCD = tRCD(IDD) ; CKE is HIGH, CS is HIGH

between valid commands ; Address bus inputs are SWITCHING ; Data pattern is same as IDD4W mA

IDD2P Precharge power-down current ; All banks idle ; tCK = tCK(IDD) ; CKE is LOW ; Other control and address

bus inputs are STABLE; Data bus inputs are FLOATING mA

IDD2N Precharge standby current; All banks idle; tCK = tCK(IDD); CKE is HIGH, CS is HIGH; Other control and

address bus inputs are SWITCHING; Data bus inputs are SWITCHING mA

IDD3P Active power-down current; All banks open; tCK = tCK(IDD); CKE is

LOW; Other control and address bus inputs are STABLE; Data bus inputs

are FLOATING

Fast PDN Exit MRS(12) = 0 mA

Slow PDN Exit MRS(12) = 1 mA

IDD3N Active standby current; All banks open; tCK = tCK(IDD), tRAS = tRASmax(IDD), tRP =tRP(IDD); CKE is

HIGH, CS is HIGH between valid commands; Other control and address bus inputs are SWITCHING; Data

bus inputs are SWITCHING mA

IDD4W Operating burst write current; All banks open, Continuous burst writes; BL = 4, CL = CL(IDD), AL = 0; tCK =

tCK(IDD), tRAS = tRASmax(IDD), tRP = tRP(IDD); CKE is HIGH, CS is HIGH between valid commands;

Address bus inputs are SWITCHING; Data bus inputs are SWITCHING mA

IDD4R Operating burst read current; All banks open, Continuous burst reads, IOUT = 0mA; BL = 4, CL = CL(IDD),

AL = 0; tCK = tCK(IDD), tRAS = tRASmax(IDD), tRP = tRP(IDD); CKE is HIGH, CS is HIGH between valid

commands; Address bus inputs are SWITCHING;; Data pattern is same as IDD4W mA

IDD5B Burst refresh current; tCK = tCK(IDD); Refresh command at every tRFC(IDD) interval; CKE is HIGH, CS is

HIGH between valid commands; Other control and address bus inputs are SWITCHING; Data bus inputs are

SWITCHING mA

IDD6 Self refresh current; CK and CK at 0 V; CKE ≤ 0.2V; Other control and address bus inputs are FLOATING;

Data bus inputs are FLOATING mA

IDD7

Operating bank interleave read current; All bank interleaving reads, IOUT = 0mA; BL = 4, CL = CL(IDD), AL

= tRCD(IDD)-1*tCK(IDD); tCK = tCK(IDD), tRC = tRC(IDD), tRRD = tRRD(IDD), tRCD = 1*tCK(ID D); CKE is

HIGH, CS is HIGH between valid commands; Address bus inputs are STABLE during DESELECTs; Data pat-

tern is same as IDD4R; - Refer to the following page for detailed timing conditions

mA

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For purposes of IDD testing, the following parameters are to be utilized

Detailed IDD7

The detailed timings are shown below for IDD7. Changes will be required if timing par ameter changes are made to the

specification.

Legend: A = Active; RA = Read with Autoprecharge; D = Deselect

IDD7: Operating Current: All Bank Interleave Read operation

All banks are being interleaved at minimum tRC(IDD) without violating tRRD(IDD) using a burst length of 4. Control

and address bus inputs are STABLE during DESELECTs. IOUT = 0mA

Parameter 16 2(L) 22 25 28 Unit

CL(IDD) 77665tCK

tRCD(IDD) 16 16 15.4 15 16.8 ns

tRC(IDD) 60 60 61.6 60 61.6 ns

tRRD(IDD)-x16 888.87.58.4ns

tCK(IDD) 1.6 2 2.2 2.5 2.8 ns

tRASmin(IDD) 44.8 44 46.2 45 44.8 ns

tRASmax(IDD) 70K 70K 70K 70K 70K ns

tRP(IDD) 16 16 15.4 15 16.8 ns

tRFC(IDD)-256Mb 75 75 75 75 75 ns

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7.1 Timing Parameters by Speed Grade

Parameter Symbol 16 2(L) 22 Unit Note

min max min max min max

DQ output access time from CK/CK tAC -250 +250 -300 +300 -350 +350 ps

DQS output access time from CK/CK tDQSCK -200 +200 -250 +250 -300 +300 ps

CK high-level width tCH 0.45 0.55 0.45 0.55 0.45 0.55 tCK

CK low-level width tCL 0.45 0.55 0.45 0.55 0.45 0.55 tCK

CK half period tHP min

(tCL,tCH) -min

(tCL,tCH) -ps 11,12

Clock cycle time CL=7 tCK 1.6 8 2 8 - - ns 15

CL=6 tCK - - - - 2.2 8 ns 15

DQ and DM input hold time tDH 125 -125 -125 -ps 6,7,8

DQ and DM input setup time tDS 50 -50 -50 -ps 6,7,8

Control & Address input pulse width

for each input tIPW 0.6 -0.6-0.6- tCK

DQ and DM input pulse width

for each input tDIPW 0.35 -0.35-0.35- tCK

Data-out high-impedance time from

CK/CK tHZ - tAC max - tAC max - tAC max ps

DQS low-impedance time from CK/CK tLZ(DQS) tAC min tAC max tAC min tAC max tAC min tAC max ps

DQ low-impedance time from CK/CK tLZ(DQ) 2*tAC min tAC max 2*tAC min tAC max 2*tAC min tAC max ps

DQS-DQ skew for DQS and

associated DQ signals tDQSQ - 200 - 200 - 200 ps 13

DQ hold skew factor tQHS - 300 - 300 - 300 ps 12

DQ/DQS output hold time from DQS tQH tHP - tQHS -tHP - tQHS -tHP -

tQHS -ps

Write command to first DQS latching

transition tDQSS WL - 0.25 WL + 0.25 WL - 0.25 WL + 0.25 WL - 0.25 WL+0.25 tCK

DQS input high pulse width tDQSH 0.35 -0.35 -0.35 - tCK

DQS input low pulse width tDQSL 0.35 -0.35 -0.35 - tCK

DQS falling edge to CK setup time tDSS 0.2 -0.2 -0.2 - tCK

DQS falling edge hold time from CK tDSH 0.2 -0.2 -0.2 - tCK

Mode register set command cycle time tMRD 2 - 2 - 2 - tCK

Write postamble tWPST 0.4 0.6 0.4 0.6 0.4 0.6 tCK 10

Write preamble tWPRE 0.35 -0.35 -0.35 - tCK

Address and control input hold time tIH 300 - 300 - 350 -ps 5,7,9

Address and control input setup time tIS 300 - 300 - 350 -ps 5,7,9

Read preamble tRPRE 0.9 1.1 0.9 1.1 0.9 1.1 tCK

Read postamble tRPST 0.4 0.6 0.4 0.6 0.4 0.6 tCK

Active to precharge command tRAS 45 70K 45 70K 45 70K ns 3

Active to Read or Write

(with and without Auto-Precharge)

delay tRCD 16 -16 -15.4 -ns

7. AC Timing Specifications

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Parameter Symbol 16 2(L) 22 Unit Note

min max min max min max

Auto-Refresh to Active/Auto-Refresh

command period tRFC 75 -75 -75 -ns

Precharge Command Period tRP 16 -16 -15.4 -ns

Active to Active/Auto-Refresh

command period tRC 60 -60 -61.6 -ns

Active to active command period tRRD 8 - 8 -8.8-ns 4

CAS to CAS command delay tCCD 2 - 2 2 tCK

Write recovery time tWR 13 - 14 -15-ns

Auto precharge write reco very +

precharge time tDAL WR+tRP -WR+tRP -WR+tRP - tCK 14

Internal write to read command delay tWTR 7.5 -7.5 -7.5 -ns

Internal read to precharge command

delay tRTP 7.5 -7.5 -7.5 -ns 3

Exit self refresh to a non-read

command tXSNR tRFC + 10 tRFC + 10 tRFC + 10 ns

Exit self refresh to a read command tXSRD 200 -200 -200 - tCK

Exit precharge power down to any

non-read command tXP 2 - 2 - 2 - tCK

Exit active power down to read

command tXARD 2 2 2 tCK 1

Exit active power down to read command

(Slow exit, Lower power) tXARDS 8 - AL 8 - AL 8 - AL tCK 1, 2

CKE minimum pulse width

(high and low pulse width) tCKE 3 3 3 tCK

Average periodic Refresh Interval tREFI 7.8 7.8 7.8 us

ODT turn-on delay tAOND 222222

tCK

ODT turn-on tAON tAC(min) tAC

(max)+0.7 tAC(min) tAC

(max)+0.7 ns 16

ODT turn-on(Power-Down mode) tAONPD tAC(min)+

2

2tCK+

tAC(max)+

1

tAC(min)+

2

2tCK+

tAC(max)+

1

tAC(min)+

22tCK+tAC

(max)+1 ns

ODT turn-off delay tAOFD 2.5 2.5 2.5 2.5 2.5 2.5 tCK

ODT turn-off tAOF tAC(min) tAC(max)+

0.6 tAC(min) tAC(max)+

0.6 ns 17

ODT turn-off (Power-Down mode) tAOFPD tAC(min)+

2

4.5tCK+

tAC(max)+

1

tAC(min)+

2

4.5tCK+

tAC(max)+

1

tAC(min)+

2

4.5tCK+

tAC(max)

+1 ns

ODT to power down entry latency tANPD 3 3 3 tCK

ODT power down exit latency tAXPD 8 8 8 tCK

OCD drive mode output delay tOIT 0 12 0 12 0 12 ns

Minimum time clocks remains ON

after CKE asynchronously drops LOW tDelay tIS+tCK

+tIH tIS+tCK

+tIH ns 15

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Parameter Symbol 25 28 Unit Note

min max min max

DQ output access time from CK/CK tAC -450 +450 -450 +450 ps

DQS output access time from CK/CK tDQSCK -400 +400 -400 +400 ps

CK high-level width tCH 0.45 0.55 0.45 0.55 tCK

CK low-level width tCL 0.45 0.55 0.45 0.55 tCK

CK half period tHP min

(tCL,tCH) -min

(tCL,tCH) -ps 11,12

Clock cycle time

CL=6 tCK 2.5 8--ns 15

CL=5 tCK - - 2.8 8 ns 15

CL=4 tCK - - --ns 15

DQ and DM input hold time tDH 175 - 175 -ps 6,7,8

DQ and DM input setup time tDS 50 -50-ps 6,7,8

Control & Address input pulse width for

each input tIPW 0.6 -0.6-tCK

DQ and DM input pulse width for each

input tDIPW 0.35 -0.35-tCK

Data-out high-impedance time from CK/CK tHZ - tAC max - tAC max ps

DQS low-impedance time from CK/CK tLZ(DQS) tAC min tAC max tAC min tAC max ps

DQ low-impedance time from CK/CK tLZ(DQ) 2*tAC min tAC max 2*tAC min tAC max ps

DQS-DQ skew for DQS and associated

DQ signals tDQSQ -200 - 250 ps 13

DQ hold skew factor tQHS -350 - 350 ps 12

DQ/DQS output hold time from DQS tQH tHP - tQHS -tHP - tQHS -ps

Write command to first DQS latching

transition tDQSS WL - 0.25 WL + 0.25 WL - 0.25 WL + 0.25 tCK

DQS input high pulse width tDQSH 0.35 -0.35 -tCK

DQS input low pulse width tDQSL 0.35 -0.35 -tCK

DQS falling edge to CK setup time tDSS 0.2 -0.2 -tCK

DQS falling edge hold time from CK tDSH 0.2 -0.2 -tCK

Mode register set command cycle time tMRD 2 - 2 - tCK

Write postamble tWPST 0.4 0.6 0.4 0.6 tCK 10

Write preamble tWPRE 0.35 -0.35 -tCK

Address and control input hold time tIH 400 - 400 -ps 5,7,9

Address and control input setup time tIS 400 - 400 -ps 5,7,9

Read preamble tRPRE 0.9 1.1 0.9 1.1 tCK

Read postamble tRPST 0.4 0.6 0.4 0.6 tCK

Active to precharge command tRAS 45 70K 45 70K ns 3

Active to Read or Write

(with and without Auto-Precharge) delay tRCD 16.8 -16.8 -ns

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Parameter Symbol 25 28 Unit Note

min max min max

Active to Read or Write

(with and without Auto-Precharge) delay tRCD 15 -16.8 -ns

Auto-Refresh to Active/Auto-Refresh

command period tRFC 75 75 -ns

Precharge Command Period tRP 15 16.8 -ns

Active to Active/Auto-Refresh command

period tRC 60 61.6 -ns

Active to active command period tRRD 8 8.4 -ns 4

CAS to CAS command delay tCCD 3 2 tCK

Write recovery time tWR 15 15 -ns

Auto precharge write recovery + precharge

time tDAL WR+tRP -WR+tRP -tCK 14

Internal write to read command delay tWTR 3 - 3 - tCK

Internal read to precharge command delay tRTP 3 - 3 - tCK 3

Exit self refresh to a non-read command tXSNR tRFC + 10 tRFC + 10 ns

Exit self refresh to a read command tXSRD 200 -200 -tCK

Exit precharge power down to any non-read

command tXP 2 - 2 - tCK

Exit active power down to read command tXARD 2 2 tCK 1

Exit active power down to read command

(Slow exit, Lower power) tXARDS 8 - AL 7 - AL tCK 1, 2

CKE minimum pulse width

(high and low pulse width) tCKE 3 3 tCK

Average periodic Refresh Interval tREFI 7.8 7.8 us

ODT turn-on delay tAOND 22 22

tCK

ODT turn-on tAON tAC(min) tAC

(max)+0.7 tAC(min) tAC

(max)+0.7 ns 16

ODT turn-on(Power-Down mode) tAONPD tAC(min)+2 2tCK+tAC(ma

x)+1 tAC(min)+2 2tCK+tAC(

max)+1 ns

ODT turn-off delay tAOFD 2.5 2.5 2.5 2.5 tCK

ODT turn-off tAOF tAC(min) tAC(max)+ 0.6 tAC(min) tAC(max)+

0.6 ns 17

ODT turn-off (Power-Down mode) tAOFPD tAC(min)+2 3.5tCK+tAC(

max)+1 tAC(min)+2 3.5tCK+tAC

(max)+1 ns

ODT to power down entry latency tANPD 3 3 tCK

ODT power down exit latency tAXPD 8 8 tCK

OCD drive mode output delay tOIT 0 12 0 12 ns

Minimum time clocks remains ON after CKE

asynchronously drops LOW tDelay tIS+tCK+tIH tIS+tCK+tIH ns 15

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7.2 General notes, which may apply for all AC parameters

1. Slew Rate Measurement Levels

a. Output slew rate for falling and rising edges is measured between VTT - 250 mV and VTT + 250 mV for

single ended signals. For differential signals (e.g. DQS - DQS) output slew rate is measured between

DQS - DQS = -500 mV and DQS - DQS = +500mV. Output slew rate is guaranteed b y design, but is no t

necessarily tested on each device.

b. Input slew rate for single ended signals is measured from dc-le ve l to ac-level: from VREF - 125 mV to

VREF + 250 mV for rising edges and from VREF + 125 mV and VREF - 250 mV for falling edges.

For dif ferential signals (e.g. CK - CK) slew rate for rising edges is meas ured from CK - CK = -250 mV to

CK - CK = +500 mV (250mV to -500 mV for falling egdes).

c. VID is the magnitude of th e difference betwee n the input vo ltage on CK a nd th e in put voltage on CK , or

between DQS and DQS for differential strobe.

2. DDR2 SDRAM AC timing reference load

The following fiture repres ent s the ti ming reference load use d in defining the relevant timin g pa rameters of

the part. It is not intended to be either a precise represent ation of the typical system environment nor a depic-

tion of the actual load presented by a production tester. System designers will use IBIS or other simulation

tools to correlate the timing reference load to a system environment. Manufacturers will correlate to their pro-

duction test conditions (generally a coaxial transmission line terminated at the tester electronics).

The output timing refere nce voltage level for single ended signals is the crosspoint with VTT. The output tim-

ing reference voltage level for differential signals is the crosspoint of th e tr ue (e.g. DQS) and the co mplement

(e.g. DQS) signal.

3. DDR2 SDRAM output slew rate test load

Output slew rate is characterized under the test conditions as shown below.

4. Differential data strobe

DDR2 SDRAM pin timings are specified for either single ended mode or differential mode depending on the

setting of the EMRS “Enable DQS” mode bit; timing advantages of differential mode are realized in system

design. The method by which the DDR2 SDRAM pin timings are measured is mode dependent. In single

VDDQ

DUT

DQ

DQS

RDQS

Output VTT = VDDQ/2

25Ω

Timing

reference

point

AC Timing Reference Load

VDDQ

DUT DQ

DQS, DQS

RDQS, RDQS

Output VTT = VDDQ/2

25Ω

Test point

Slew Rate Test Load

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VREF. In differential mode, these timing relationships are measured relative to the crosspoint of DQS and its

complement, DQS. This distinction in timing methods is guaranteed by design and characteriza tion. Note that

when dif ferential data strobe mode is disabled via the EMRS, the complementary pin, DQS, must be tied

externally to VSS through a 20 ohm to 10 K ohm resistor to insure proper operation.

5. AC timings are for linear signal transitions. See System Derating for other signal tr ansitions.

6. These parameters guarantee device behavior, but they are not necessarily tested on each device. They

may be guaranteed by device design or tester correlation.

7. All voltages referenced to VSS.

8. Tests for AC timing, IDD, and electrical (AC and DC) characteristics, ma y be conducted at nominal refe r-

ence/supply voltage levels, but the related specifications and device operation are guar anteed for the full volt-

age range specified.

tDS tDS tDH

tWPRE tWPST

tDQSH tDQSL

DQS

D

DMin

DQS/

DQ

DM

tDH

Figure -- Data input (write) timing

DMin DMin DMin

DDD

DQS

tCH tCL

CK

CK/CK

DQS/DQS

DQ

DQS

tRPST

Q

tRPRE

tDQSQmax

tQH tQH

tDQSQmax

Figure -- Data output (read) timing

QQQ

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7.3 Specific Notes for dedicated AC parameters

1. User can choose which active power down exit timing to use via MRS(bit 12). tXARD is expected to be

used for fast active power down exit timing. tXARDS is expected to be used for slow active power down

exit timing where a lower power value is defined by each vendor data sheet.

2. AL = Additive Latency

3. This is a minimum requireme nt. Minimum r ead to pr echarg e timing is AL + BL /2 providin g the tRTP a nd

tRAS(min) have been satisfied.

4. A minimum of two clocks (2 * tCK) is required irr espective of operating frequency

5. Timings are guaranteed with command/address input slew rate of 1.0 V/ns. See System Derating for

other slew rate values.

6. T imings are g uaranteed with dat a, mask, and (DQS/RDQS in singled ended mode) inp ut slew rate of 1.0

V/ns. See System Derating for other slew rate values.

7. Timings are guar a nte e d with CK/CK differential sle w rate of 2.0 V/ns. Timings are guaranteed for DQS

signals with a dif ferential slew rate of 2.0 V/ns in dif ferential str obe mode and a slew rate of 1V/ns in single

ended mode. See System Derating for other slew rate values.

8. tDS and tDH (data setup and hold) derating

tbd

9. tIS and tIH (input setup and hold) derating

tbd

10. The maximum limit for this parameter is not a device limit. The device will operate with a greater value

for this parameter, but system performance (bus turnaround) will degrade accordingly.

11. MIN ( t CL, t CH) refers to the smaller of the actual clock low time and the actual clock high time as pro-

vided to the device (i.e. this value can be greater than the minimum specification limits for t CL and t CH).

For example, t CL and t CH are = 50% of the period, less the half period jitter ( t JIT(HP)) of the clock

source, and less the half perio d jitter due to crosstalk ( t JIT(crosstalk)) into the clock traces.

12. t QH = t HP – t QHS, where:

tHP = minimum half clock period for any given cycle and is defined by clock high or clock low ( tCH,

tCL).

tQHS accounts for:

1) The pulse duration distortion of on-chip clock circuits; and

2) The worst case push-out of DQS on one transition followed by the worst case pull-in of DQ on the

next transition, both of which are, separately, due to data pin skew and output pattern effects, and

p- channel to n-channel variation of the output drivers.

13. tDQSQ: Consists of data pin skew and output pattern effects, and p-channel to n-channel variation of

the output drivers for any given cycle.

14. t DAL = (nWR) + ( tRP/tCK):

For each of the terms above, if not already an integer, roun d to th e ne xt hig hest integer. tCK refers to the

Rev. 1.2/Aug. 2008 77

1HY5PS561621BFP

application clock period. nWR refers to the t WR parameter stored in the MRS.

15. The clock frequency is allowed to chan ge during self–refresh mode or precharge power-down mode. In

case of clock frequency change during precharge power-down, a specific procedure is required as

described in section 2.9.

16. ODT turn on time min is when the device leaves high impedance and ODT resistance begins to turn

on. ODT turn on time max is when the ODT resistance is fully on. Both are measured from tAOND.

17. ODT turn off time min is when the device starts to turn off ODT resista nce.

ODT turn off time max is when the bus is in high impedance. Both are measured from tAOFD.

Rev. 1.2/Aug. 2008 78

1HY5PS561621BFP

8 Package Dimension(x16)

84Ball Fine Pitch Ball Grid Array Outline

A1 Ball Mark

13 +/- 0.10

8 +/- 0.10

0.8 x 14 = 11.2

A B C D E F G H J K L M N P R

1 2 3

7 8 9

0.34 +/- 0.05

1.10 +/-0.10

0.80

0.80 x 8 = 6.40

A1 Ball Mark 84 - φ 0.50 +/- 0.05

<Bottom View> Note: All dimension units are Millimeters.

0.325 2.10+/-0.10

1.60 1.60

0.90

0.50+/0.025

2-R 0.15 MA

X

30o

0.19

0.15+/-0.05