16 Mbit (x8/x16) Concurrent SuperFlash SST36VF1601E / SST36VF1602E SST36VF1601E / 1602E16Mb (x8/x16) Concurrent SuperFlash Data Sheet FEATURES: * Organized as 1M x16 or 2M x8 * Dual Bank Architecture for Concurrent Read/Write Operation - 16 Mbit Bottom Sector Protection - SST36VF1601E: 12 Mbit + 4 Mbit - 16 Mbit Top Sector Protection - SST36VF1602E: 4 Mbit + 12 Mbit * Single 2.7-3.6V for Read and Write Operations * Superior Reliability - Endurance: 100,000 cycles (typical) - Greater than 100 years Data Retention * Low Power Consumption: - Active Current: 6 mA typical - Standby Current: 4 A typical - Auto Low Power Mode: 4 A typical * Hardware Sector Protection/WP# Input Pin - Protects the 4 outermost sectors (8 KWord) in the larger bank by driving WP# low and unprotects by driving WP# high * Hardware Reset Pin (RST#) - Resets the internal state machine to reading array data * Byte# Pin - Selects 8-bit or 16-bit mode * Sector-Erase Capability - Uniform 2 KWord sectors * Chip-Erase Capability * Block-Erase Capability - Uniform 32 KWord blocks * Erase-Suspend / Erase-Resume Capabilities * Security ID Feature - SST: 128 bits - User: 128 bits * Fast Read Access Time - 70 ns * Latched Address and Data * Fast Erase and Program (typical): - Sector-Erase Time: 18 ms - Block-Erase Time: 18 ms - Chip-Erase Time: 35 ms - Program Time: 7 s * Automatic Write Timing - Internal VPP Generation * End-of-Write Detection - Toggle Bit - Data# Polling - Ready/Busy# pin * CMOS I/O Compatibility * Conforms to Common Flash Memory Interface (CFI) * JEDEC Standards - Flash EEPROM Pinouts and command sets * Packages Available - 48-ball TFBGA (6mm x 8mm) - 48-lead TSOP (12mm x 20mm) * All non-Pb (lead-free) devices are RoHS compliant PRODUCT DESCRIPTION The SST36VF1601E and SST36VF1602E are 1M x16 or 2M x8 CMOS Concurrent Read/Write Flash Memory manufactured with SST's proprietary, high performance CMOS SuperFlash memory technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The devices write (Program or Erase) with a 2.7-3.6V power supply and conform to JEDEC standard pinouts for x8/x16 memories. Featuring high performance Program, these devices provide a typical Program time of 7 sec and use the Toggle Bit, Data# Polling, or RY/BY# to detect the completion of the Program or Erase operation. To protect against inadvertent write, the devices have on-chip hardware and Software Data Protection schemes. Designed, manufactured, (c)2009 Silicon Storage Technology, Inc. S71274-04-000 11/09 1 and tested for a wide spectrum of applications, these devices are offered with a guaranteed endurance of 10,000 cycles. Data retention is rated at greater than 100 years. These devices are suited for applications that require convenient and economical updating of program, configuration, or data memory. For all system applications, the devices significantly improve performance and reliability, while lowering power consumption. Since for any given voltage range, the SuperFlash technology uses less current to program and has a shorter erase time, the total energy consumed during any Erase or Program operation is less than alternative flash technologies. These devices also improve flexibility while lowering the cost for program, data, and configuration storage applications. The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc. CSF is a trademark of Silicon Storage Technology, Inc. These specifications are subject to change without notice. 16 Mbit Concurrent SuperFlash SST36VF1601E / SST36VF1602E Data Sheet Read Operation SuperFlash technology provides fixed Erase and Program times, independent of the number of Erase/Program cycles that have occurred. Therefore the system software or hardware does not have to be modified or de-rated as is necessary with alternative flash technologies, whose Erase and Program times increase with accumulated Erase/Program cycles. The Read operation is controlled by CE# and OE#; both have to be low for the system to obtain data from the outputs. CE# is used for device selection. When CE# is high, the chip is deselected and only standby power is consumed. OE# is the output control and is used to gate data from the output pins. The data bus is in a high impedance state when either CE# or OE# is high. Refer to the Read cycle timing diagram for further details (Figure 8). To meet high-density, surface-mount requirements, these devices are offered in 48-ball TFBGA and 48-lead TSOP packages. See Figures 6 and 7 for pin assignments. Program Operation Device Operation These devices are programmed on a word-by-word or byte-by-byte basis depending on the state of the BYTE# pin. Before programming, one must ensure that the sector which is being programmed is fully erased. Memory operation functions are initiated using standard microprocessor write sequences. A command is written by asserting WE# low while keeping CE# low. The address bus is latched on the falling edge of WE# or CE#, whichever occurs last. The data bus is latched on the rising edge of WE# or CE#, whichever occurs first. The Program operation is accomplished in three steps: 1. Software Data Protection is initiated using the three-byte load sequence. Auto Low Power Mode 2. Address and data are loaded. These devices also have the Auto Lower Power mode which puts them in a near standby mode within 500 ns after data has been accessed with a valid Read operation. This reduces the IDD active Read current to 4 A typically. While CE# is low, the devices exit Auto Low Power mode with any address transition or control signal transition used to initiate another Read cycle, with no access time penalty. During the Program operation, the addresses are latched on the falling edge of either CE# or WE#, whichever occurs last. The data is latched on the rising edge of either CE# or WE#, whichever occurs first. 3. The internal Program operation is initiated after the rising edge of the fourth WE# or CE#, whichever occurs first. The Program operation, once initiated, will be completed typically within 7 s. Concurrent Read/Write Operation The dual bank architecture of these devices allows the Concurrent Read/Write operation whereby the user can read from one bank while programming or erasing in the other bank. For example, reading system code in one bank while updating data in the other bank. See Figures 9 and 10 for WE# and CE# controlled Program operation timing diagrams and Figure 24 for flowcharts. During the Program operation, the only valid reads are Data# Polling and Toggle Bit. During the internal Program operation, the host is free to perform additional tasks. Any commands issued during an internal Program operation are ignored. TABLE 1: Concurrent Read/Write State Bank 1 Bank 2 Read No Operation Read Write Write Read Write No Operation No Operation Read No Operation Write Note: For the purposes of this table, write means to perform Blockor Sector-Erase or Program operations as applicable to the appropriate bank. (c)2009 Silicon Storage Technology, Inc. S71274-04-000 2 11/09 16 Mbit Concurrent SuperFlash SST36VF1601E / SST36VF1602E Data Sheet Sector-Erase/Block-Erase Operation Erase-Suspend/Erase-Resume Operations These devices offer both Sector-Erase and Block-Erase operations. These operations allow the system to erase the devices on a sector-by-sector (or block-by-block) basis. The sector architecture is based on a uniform sector size of 2 KWord. The Block-Erase mode is based on a uniform block size of 32 KWord. The Sector-Erase operation is initiated by executing a six-byte command sequence with a SectorErase command (30H) and sector address (SA) in the last bus cycle. The Block-Erase operation is initiated by executing a six-byte command sequence with Block-Erase command (50H) and block address (BA) in the last bus cycle. The sector or block address is latched on the falling edge of the sixth WE# pulse, while the command (30H or 50H) is latched on the rising edge of the sixth WE# pulse. The internal Erase operation begins after the sixth WE# pulse. Any commands issued during the Sector- or Block-Erase operation are ignored except Erase-Suspend and EraseResume. See Figures 14 and 15 for timing waveforms. The Erase-Suspend operation temporarily suspends a Sector- or Block-Erase operation thus allowing data to be read from any memory location, or program data into any sector/block that is not suspended for an Erase operation. The operation is executed by issuing a one-byte command sequence with Erase-Suspend command (B0H). The device automatically enters read mode no more than 10 s after the Erase-Suspend command had been issued. (TES maximum latency equals 10 s.) Valid data can be read from any sector or block that is not suspended from an Erase operation. Reading at address location within erasesuspended sectors/blocks will output DQ2 toggling and DQ6 at "1". While in Erase-Suspend mode, a Program operation is allowed except for the sector or block selected for Erase-Suspend. To resume Sector-Erase or BlockErase operation which has been suspended, the system must issue an Erase-Resume command. The operation is executed by issuing a one-byte command sequence with Erase Resume command (30H) at any address in the onebyte sequence. Chip-Erase Operation The devices provide a Chip-Erase operation, which allows the user to erase all sectors/blocks to the "1" state. This is useful when a device must be quickly erased. Write Operation Status Detection These devices provide one hardware and two software means to detect the completion of a Write (Program or Erase) cycle in order to optimize the system Write cycle time. The hardware detection uses the Ready/Busy# (RY/ BY#) output pin. The software detection includes two status bits: Data# Polling (DQ7) and Toggle Bit (DQ6). The End-of-Write detection mode is enabled after the rising edge of WE#, which initiates the internal Program or Erase operation. The Chip-Erase operation is initiated by executing a sixbyte command sequence with Chip-Erase command (10H) at address 555H in the last byte sequence. The Erase operation begins with the rising edge of the sixth WE# or CE#, whichever occurs first. During the Erase operation, the only valid Read is Toggle Bit or Data# Polling. Any commands issued during the Chip-Erase operation are ignored. See Table 6 for the command sequence, Figure 13 for timing diagram, and Figure 28 for the flowchart. When WP# is low, any attempt to Chip-Erase will be ignored. The actual completion of the nonvolatile write is asynchronous with the system; therefore, either a Ready/Busy# (RY/ BY#), a Data# Polling (DQ7), or Toggle Bit (DQ6) Read may be simultaneous with the completion of the Write cycle. If this occurs, the system may get an erroneous result, i.e., valid data may appear to conflict with either DQ7 or DQ6. In order to prevent spurious rejection if an erroneous result occurs, the software routine should include a loop to read the accessed location an additional two (2) times. If both Reads are valid, then the Write cycle has completed, otherwise the rejection is valid. (c)2009 Silicon Storage Technology, Inc. S71274-04-000 3 11/09 16 Mbit Concurrent SuperFlash SST36VF1601E / SST36VF1602E Data Sheet Ready/Busy# (RY/BY#) Toggle Bits (DQ6 and DQ2) The devices include a Ready/Busy# (RY/BY#) output signal. RY/BY# is an open drain output pin that indicates whether an Erase or Program operation is in progress. Since RY/BY# is an open drain output, it allows several devices to be tied in parallel to VDD via an external pull-up resistor. After the rising edge of the final WE# pulse in the command sequence, the RY/BY# status is valid. During the internal Program or Erase operation, any consecutive attempts to read DQ6 will produce alternating "1"s and "0"s, i.e., toggling between 1 and 0. When the internal Program or Erase operation is completed, the DQ6 bit will stop toggling. The device is then ready for the next operation. The toggle bit is valid after the rising edge of the fourth WE# (or CE#) pulse for Program operations. For Sector-, Block-, or Chip-Erase, the toggle bit (DQ6) is valid after the rising edge of sixth WE# (or CE#) pulse. DQ6 will be set to "1" if a Read operation is attempted on an Erase-suspended Sector/Block. If Program operation is initiated in a sector/block not selected in Erase-Suspend mode, DQ6 will toggle. When RY/BY# is actively pulled low, it indicates that an Erase or Program operation is in progress. When RY/BY# is high (Ready), the devices may be read or left in standby mode. Byte/Word (BYTE#) An additional Toggle Bit is available on DQ2, which can be used in conjunction with DQ6 to check whether a particular sector is being actively erased or erase-suspended. Table 2 shows detailed status bit information. The Toggle Bit (DQ2) is valid after the rising edge of the last WE# (or CE#) pulse of a Write operation. See Figure 12 for Toggle Bit timing diagram and Figure 25 for a flowchart. The device includes a BYTE# pin to control whether the device data I/O pins operate x8 or x16. If the BYTE# pin is at logic "1" (VIH) the device is in x16 data configuration: all data I/0 pins DQ0-DQ15 are active and controlled by CE# and OE#. If the BYTE# pin is at logic "0", the device is in x8 data configuration: only data I/O pins DQ0-DQ7 are active and controlled by CE# and OE#. The remaining data pins DQ8DQ14 are at Hi-Z, while pin DQ15 is used as the address input A-1 for the Least Significant Bit of the address bus. TABLE 2: Write Operation Status Status DQ7 DQ6 DQ2 RY/BY# DQ7# Toggle No Toggle 0 Standard Erase 0 Toggle Toggle 0 Read From Erase Suspended Sector/Block 1 1 Toggle 1 Read From Non-Erase Suspended Sector/Block Data Data Data 1 Program DQ7# Toggle N/A Normal Standard Operation Program Data# Polling (DQ7) When the devices are in an internal Program operation, any attempt to read DQ7 will produce the complement of the true data. Once the Program operation is completed, DQ7 will produce true data. During internal Erase operation, any attempt to read DQ7 will produce a `0'. Once the internal Erase operation is completed, DQ7 will produce a `1'. The Data# Polling is valid after the rising edge of fourth WE# (or CE#) pulse for Program operation. For Sector-, Block-, or Chip-Erase, the Data# Polling is valid after the rising edge of sixth WE# (or CE#) pulse. See Figure 11 for Data# Polling (DQ7) timing diagram and Figure 25 for a flowchart. EraseSuspend Mode 0 T2.1 1274 Note: DQ7, DQ6, and DQ2 require a valid address when reading status information. The address must be in the bank where the operation is in progress in order to read the operation status. If the address is pointing to a different bank (not busy), the device will output array data. (c)2009 Silicon Storage Technology, Inc. S71274-04-000 4 11/09 16 Mbit Concurrent SuperFlash SST36VF1601E / SST36VF1602E Data Sheet Data Protection Software Data Protection (SDP) The devices provide both hardware and software features to protect nonvolatile data from inadvertent writes. These devices provide the JEDEC standard Software Data Protection scheme for all data alteration operations, i.e., Program and Erase. Any Program operation requires the inclusion of the three-byte sequence. The three-byte load sequence is used to initiate the Program operation, providing optimal protection from inadvertent Write operations, e.g., during the system power-up or power-down. Any Erase operation requires the inclusion of the six-byte sequence. The devices are shipped with the Software Data Protection permanently enabled. See Table 6 for the specific software command codes. During SDP command sequence, invalid commands will abort the device to Read mode within TRC. The contents of DQ15-DQ8 can be VIL or VIH, but no other value during any SDP command sequence. Hardware Data Protection Noise/Glitch Protection: A WE# or CE# pulse of less than 5 ns will not initiate a Write cycle. VDD Power Up/Down Detection: The Write operation is inhibited when VDD is less than 1.5V. Write Inhibit Mode: Forcing OE# low, CE# high, or WE# high will inhibit the Write operation. This prevents inadvertent writes during power-up or power-down. Hardware Block Protection The devices provide hardware block protection which protects the outermost 8 KWord in the larger bank. The block is protected when WP# is held low. See Figures 2, 3, 4, and 5 for Block-Protection location. Common Flash Memory Interface (CFI) These devices also contain the CFI information to describe the characteristics of the devices. In order to enter the CFI Query mode, the system must write the three-byte sequence, same as the Software ID Entry command with 98H (CFI Query command) to address 555H in the last byte sequence. See Figure 17 for CFI Entry and Read timing diagram. Once the device enters the CFI Query mode, the system can read CFI data at the addresses given in Tables 7 through 9. The system must write the CFI Exit command to return to Read mode from the CFI Query mode. A user can disable block protection by driving WP# high. This allows data to be erased or programmed into the protected sectors. WP# must be held high prior to issuing the Write command and remain stable until after the entire Write operation has completed. If WP# is left floating, it is internally held high via a pull-up resistor, and the Boot Block is unprotected, enabling Program and Erase operations on that block. Hardware Reset (RST#) Security ID The RST# pin provides a hardware method of resetting the devices to read array data. When the RST# pin is held low for at least TRP, any in-progress operation will terminate and return to Read mode (see Figure 21). When no internal Program/Erase operation is in progress, a minimum period of TRHR is required after RST# is driven high before a valid Read can take place (see Figure 20). The SST36VF160xE devices offer a 256-bit Security ID space. The Secure ID space is divided into two 128-bit segments--one factory programmed segment and one user programmed segment. The first segment is programmed and locked at SST with a unique, 128-bit number. The user segment is left un-programmed for the customer to program as desired. To program the user segment of the Security ID, the user must use the Security ID Program command. End-of-Write status is checked by reading the toggle bits. Data# Polling is not used for Security ID End-ofWrite detection. Once programming is complete, the Sec ID should be locked using the User Sec ID Program LockOut. This disables any future corruption of this space. Note that regardless of whether or not the Sec ID is locked, neither Sec ID segment can be erased. The Secure ID space can be queried by executing a three-byte command sequence with Query Sec ID command (88H) at address 555H in the last byte sequence. See Figure 19 for timing diagram. To exit this mode, the Exit Sec ID command should be executed. Refer to Table 6 for more details. The Erase operation that has been interrupted needs to be reinitiated after the device resumes normal operation mode to ensure data integrity. (c)2009 Silicon Storage Technology, Inc. S71274-04-000 5 11/09 16 Mbit Concurrent SuperFlash SST36VF1601E / SST36VF1602E Data Sheet Product Identification Product Identification Mode Exit/CFI Mode Exit The Product Identification mode identifies the devices and manufacturer. For details, see Table 3 for software operation, Figure 16 for the Software ID Entry and Read timing diagram and Figure 26 for the Software ID Entry command sequence flowchart. The addresses A19 and A18 indicate a bank address. When the addressed bank is switched to Product Identification mode, it is possible to read another address from the same bank without issuing a new Software ID Entry command. In order to return to the standard Read mode, the Software Product Identification mode must be exited. Exit is accomplished by issuing the Software ID Exit command sequence, which returns the device to the Read mode. This command may also be used to reset the device to the Read mode after any inadvertent transient condition that apparently causes the device to behave abnormally, e.g., not read correctly. Please note that the Software ID Exit/CFI Exit command is ignored during an internal Program or Erase operation. See Table 6 for the software command code, Figure 18 for timing waveform and Figure 27 for a flowchart. TABLE 3: Product Identification Address Data BK0000H 00BFH SST36VF1601E BK0001H 734BH SST36VF1602E BK0001H 734AH Manufacturer's ID Device ID T3.0 1274 Note: BK = Bank Address (A19-A18) Address Buffers Memory Address (8 KWord Sector Protection) SuperFlash Memory 12 Mbit Bank BYTE# SuperFlash Memory 4 Mbit Bank RST# CE# WP# Control Logic I/O Buffers WE# DQ15/A-1 - DQ0 OE# 1274 B01.0 RY/BY# FIGURE 1: Functional Block Diagram (c)2009 Silicon Storage Technology, Inc. S71274-04-000 6 11/09 16 Mbit Concurrent SuperFlash SST36VF1601E / SST36VF1602E Data Sheet Bottom Sector Protection; 32 KWord Blocks; 2 KWord Sectors Block 30 Block 29 Block 28 Block 27 Block 26 Block 25 Block 24 Block 23 Block 22 Block 21 Block 20 Block 19 Block 18 Block 17 Block 16 Block 15 Block 14 Block 13 Block 12 Block 11 Block 10 Bank 1 8 KWord Sector Protection (4-2 KWord Sectors) Block 31 Bank 2 FFFFFH F8000H F7FFFH F0000H EFFFFH E8000H E7FFFH E0000H DFFFFH D8000H D7FFFH D0000H CFFFFH C8000H C7FFFH C0000H BFFFFH B8000H B7FFFH B0000H AFFFFH A8000H A7FFFH A0000H 9FFFFH 98000H 97FFFH 90000H 8FFFFH 88000H 87FFFH 80000H 7FFFFH 78000H 77FFFH 70000H 6FFFFH 68000H 67FFFH 60000H 5FFFFH 58000H 57FFFH 50000H 4FFFFH 48000H 47FFFH 40000H 3FFFFH 38000H 37FFFH 30000H 2FFFFH 28000H 27FFFH 20000H 1FFFFH 18000H 17FFFH 10000H 0FFFFH 08000H 07FFFH 02000H 01FFFH 00000H Block 9 Block 8 Block 7 Block 6 Block 5 Block 4 Block 3 Block 2 Block 1 Block 0 1274 F01.0 Note: The address input range in x16 mode (BYTE#=VIH) is A19-A0 FIGURE 2: SST36VF1601E, 1M x16 Concurrent SuperFlash Dual-Bank Memory Organization (c)2009 Silicon Storage Technology, Inc. S71274-04-000 7 11/09 16 Mbit Concurrent SuperFlash SST36VF1601E / SST36VF1602E Data Sheet Bottom Sector Protection; 64 KByte Blocks; 4 KByte Sectors Block 30 Block 29 Block 28 Block 27 Block 26 Block 25 Block 24 Block 23 Block 22 Block 21 Block 20 Block 19 Block 18 Block 17 Block 16 Block 15 Block 14 Block 13 Block 12 Block 11 Block 10 Bank 1 16 KByte Sector Protection (4-4 KByte Sectors) Block 31 Bank 2 1FFFFFH 1F0000H 1EFFFFH 1E0000H 1DFFFFH 1D0000H 1CFFFFH 1C0000H 1BFFFFH 1B0000H 1AFFFFH 1A0000H 19FFFFH 190000H 18FFFFH 180000H 17FFFFH 170000H 16FFFFH 160000H 15FFFFH 150000H 14FFFFH 140000H 13FFFFH 130000H 12FFFFH 120000H 11FFFFH 110000H 10FFFFH 100000H 0FFFFFH 0F0000H 0EFFFFH 0E0000H 0DFFFFH 0D0000H 0CFFFFH 0C0000H 0BFFFFH 0B0000H 0AFFFFH 0A0000H 09FFFFH 090000H 08FFFFH 080000H 07FFFFH 070000H 06FFFFH 060000H 05FFFFH 050000H 04FFFFH 040000H 03FFFFH 030000H 02FFFFH 020000H 01FFFFH 010000H 00FFFFH 004000H 003FFFH 000000H Block 9 Block 8 Block 7 Block 6 Block 5 Block 4 Block 3 Block 2 Block 1 Block 0 1274 F02.0 Note: The address input range in x8 mode (BYTE#=VIL) is A19-A-1 FIGURE 3: SST36VF1601E, 2M x8 Concurrent SuperFlash Dual-Bank Memory Organization (c)2009 Silicon Storage Technology, Inc. S71274-04-000 8 11/09 16 Mbit Concurrent SuperFlash SST36VF1601E / SST36VF1602E Data Sheet Top Block Protection; 32 KWord Blocks; 2 KWord Sectors 8 KWord Block Protection (4 - 2 KWord Sectors) Block 31 Block 30 Block 29 Block 28 Block 27 Block 26 Block 25 Block 24 Block 23 Block 22 Bank 2 Block 21 Block 20 Block 19 Block 18 Block 17 Block 16 Block 15 Block 14 Block 13 Block 12 Block 11 Block 10 Block 9 Block 8 Block 7 Block 6 Block 5 Bank 1 FFFFFH FE000H FDFFFH F8000H F7FFFH F0000H EFFFFH E8000H E7FFFH E0000H DFFFFH D8000H D7FFFH D0000H CFFFFH C8000H C7FFFH C0000H BFFFFH B8000H B7FFFH B0000H AFFFFH A8000H A7FFFH A0000H 9FFFFH 98000H 97FFFH 90000H 8FFFFH 88000H 87FFFH 80000H 7FFFFH 78000H 77FFFH 70000H 6FFFFH 68000H 67FFFH 60000H 5FFFFH 58000H 57FFFH 50000H 4FFFFH 48000H 47FFFH 40000H 3FFFFH 38000H 37FFFH 30000H 2FFFFH 28000H 27FFFH 20000H 1FFFFH 18000H 17FFFH 10000H 0FFFFH 08000H 07FFFH 00000H Block 4 Block 3 Block 2 Block 1 Block 0 1274 F03.0 Note: The address input range in x16 mode (BYTE#=VIH) is A19-A0 FIGURE 4: SST36VF1602E, 1M x16 Concurrent SuperFlash Dual-Bank Memory Organization (c)2009 Silicon Storage Technology, Inc. S71274-04-000 9 11/09 16 Mbit Concurrent SuperFlash SST36VF1601E / SST36VF1602E Data Sheet Top Block Protection; 64 KByte Blocks; 4 KByte Sectors 16 KByte Block Protection (4 - 4 KByte Sectors) Block 31 Block 30 Block 29 Block 28 Block 27 Block 26 Block 25 Block 24 Block 23 Block 22 Block 21 Block 20 Block 19 Bank 2 Block 18 Block 17 Block 16 Block 15 Block 14 Block 13 Block 12 Block 11 Block 10 Block 9 Block 8 Block 7 Block 6 Block 5 Block 4 Block 3 Bank 1 1FFFFFH 1FC000H 1FBFFFH 1F0000H 1EFFFFH 1E0000H 1DFFFFH 1D0000H 1CFFFFH 1C0000H 1BFFFFH 1B0000H 1AFFFFH 1A0000H 19FFFFH 190000H 18FFFFH 180000H 17FFFFH 170000H 16FFFFH 160000H 15FFFFH 150000H 14FFFFH 140000H 13FFFFH 130000H 12FFFFH 120000H 11FFFFH 110000H 10FFFFH 100000H 0FFFFFH 0F0000H 0EFFFFH 0E0000H 0DFFFFH 0D0000H 0CFFFFH 0C0000H 0BFFFFH 0B0000H 0AFFFFH 0A0000H 09FFFFH 090000H 08FFFFH 080000H 07FFFFH 070000H 06FFFFH 060000H 05FFFFH 050000H 04FFFFH 040000H 03FFFFH 030000H 02FFFFH 020000H 01FFFFH 010000H 00FFFFH 000000H Block 2 Block 1 Block 0 1274 F04.0 Note: The address input range in x8 mode (BYTE#=VIL) is A19-A-1 FIGURE 5: SST36VF1602E, 2M x8 Concurrent SuperFlash Dual-Bank Memory Organization (c)2009 Silicon Storage Technology, Inc. S71274-04-000 10 11/09 16 Mbit Concurrent SuperFlash SST36VF1601E / SST36VF1602E Data Sheet TOP VIEW (balls facing down) 6 5 A13 A12 A14 A15 A16 BYTE# A9 A8 NOTE* VSS A10 A11 DQ7 DQ14 DQ13 DQ6 WE# RST# NC A19 DQ5 DQ12 VDD DQ4 RY/BY# WP# A18 NC DQ2 DQ10 DQ11 DQ3 3 2 1 DQ0 DQ8 DQ9 DQ1 A7 A17 A6 A5 A3 A4 A2 A1 A0 A B C D E CE# OE# VSS F G 1274 48-tfbga P1.0 4 H Note* = DQ15/A-1 FIGURE 6: Pin Assignments for 48-ball TFBGA (6mm x 8mm) A15 A14 A13 A12 A11 A10 A9 A8 A19 NC WE# RST# NC WP# RY/BY# A18 A17 A7 A6 A5 A4 A3 A2 A1 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 Standard Pinout Top View Die Up 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 A16 BYTE# VSS DQ15/A-1 DQ7 DQ14 DQ6 DQ13 DQ5 DQ12 DQ4 VDD DQ11 DQ3 DQ10 DQ2 DQ9 DQ1 DQ8 DQ0 OE# VSS CE# A0 1274 48-tsop P02.0 FIGURE 7: Pin Assignments for 48-lead TSOP (12mm x 20mm) (c)2009 Silicon Storage Technology, Inc. S71274-04-000 11 11/09 16 Mbit Concurrent SuperFlash SST36VF1601E / SST36VF1602E Data Sheet TABLE 4: Pin Description Symbol Name A19-A0 Address Inputs Functions To provide memory addresses. During Sector-Erase and Hardware Sector Protection, A19-A11 address lines will select the sector. During Block-Erase A19-A15 address lines will select the block. DQ14-DQ0 Data Input/Output To output data during Read cycles and receive input data during Write cycles Data is internally latched during a Write cycle. The outputs are in tri-state when OE# or CE# is high. DQ15/A-1 DQ15 is used as data I/O pin when in x16 mode (BYTE# = "1") A-1 is used as the LSB address pin when in x8 mode (BYTE# = "0") Data Input/Output and LBS Address CE# Chip Enable To activate the device when CE# is low. OE# Output Enable To gate the data output buffers WE# Write Enable To control the Write operations RST# Hardware Reset To reset and return the device to Read mode RY/BY# Ready/Busy# To output the status of a Program or Erase operation RY/BY# is a open drain output, so a 10K - 100K pull-up resistor is required to allow RY/BY# to transition high indicating the device is ready to read. WP# Write Protect To protect and unprotect top or bottom 8 KWord (4 outermost sectors) from Erase or Program operation. BYTE# Word/Byte Configuration To select 8-bit or 16-bit mode. VDD Power Supply VSS Ground NC No Connection To provide 2.7-3.6V power supply voltage Unconnected pins T4.0 1274 TABLE 5: Operation Modes Selection DQ15-DQ8 Mode1 CE# OE# WE# DQ7-DQ0 BYTE# = VIH BYTE# = VIL Address VIL VIL VIH DOUT DOUT DQ14-DQ8 = High Z AIN Program VIL VIH VIL DIN DIN DQ15 = A-1 AIN Erase VIL VIH VIL X2 X High Z Sector or Block address, 555H for Chip-Erase VIHC X X High Z High Z High Z X X VIL X High Z / DOUT High Z / DOUT High Z X X X VIH High Z / DOUT High Z / DOUT High Z X VIL VIL VIH Manufacturer's ID (BFH) Manufacturer's ID (00H) High Z See Table 6 Device ID3 Device ID3 High Z Read Standby Write Inhibit Product Identification Software Mode T5.2 1274 1. RST# = VIH for all described operation modes 2. X can be VIL or VIH, but no other value. 3. Device ID = SST36VF1601E = 734BH, SST36VF1602E = 734AH (c)2009 Silicon Storage Technology, Inc. S71274-04-000 12 11/09 16 Mbit Concurrent SuperFlash SST36VF1601E / SST36VF1602E Data Sheet TABLE 6: Software Command Sequence Command Sequence 1st Bus Write Cycle Addr1 Data2 2nd Bus Write Cycle Addr1 Data2 3rd Bus Write Cycle Addr1 4th Bus Write Cycle Data2 Addr1 Data2 Data AAH Program 555H AAH 2AAH 55H 555H A0H WA3 Sector-Erase 555H AAH 2AAH 55H 555H 80H 555H 5th Bus Write Cycle 6th Bus Write Cycle Addr1 Data2 Addr1 Data2 2AAH 55H SAX4 30H 4 50H 10H Block-Erase 555H AAH 2AAH 55H 555H 80H 555H AAH 2AAH 55H BAX Chip-Erase 555H AAH 2AAH 55H 555H 80H 555H AAH 2AAH 55H 555H Erase-Suspend XXXXH B0H Erase-Resume XXXXH 30H Query Sec ID5 555H AAH 2AAH 55H 555H 88H User Security ID Program 555H AAH 2AAH 55H 555H A5H SIWA6 Data User Security ID Program Lock-out7 555H AAH 2AAH 55H 555H 85H XXH 0000H Software ID Entry8 555H AAH 2AAH 55H BKX9 555H 90H CFI Query Entry 555H AAH 2AAH 55H BKX9 555H 98H Software ID Exit/ CFI Exit/ Sec ID Exit10,11 555H AAH 2AAH 55H 555H F0H Software ID Exit/ CFI Exit/ Sec ID Exit10,11 XXH F0H T6.1 1274 1. Address format A10-A0 (Hex), Addresses A19-A11 can be VIL or VIH, but no other value, for the command sequence when in x16 mode. When in x8 mode, Addresses A19-A12, Address A-1 and DQ14-DQ8 can be VIL or VIH, but no other value, for the command sequence. 2. DQ15-DQ8 can be VIL or VIH, but no other value, for the command sequence 3. WA = Program word/byte address 4. SAX for Sector-Erase; uses A19-A11 address lines BAX for Block-Erase; uses A19-A15 address lines 5. For SST36VF1601E, SST ID is read with A3 = 0 (Address range = 00000H to 00007H), User ID is read with A3 = 1 (Address range = 00010H to 00017H). Lock Status is read with A7-A0 = 000FFH. Unlocked: DQ3 = 1 / Locked: DQ3 = 0. For SST36VF1602E, SST ID is read with A3 = 0 (Address range = C0000H to C0007H), User ID is read with A3 = 1 (Address range = C0010H to C0017H). Lock Status is read with A7-A0 = C00FFH. Unlocked: DQ3 = 1 / Locked: DQ3 = 0. 6. SIWA = User Security ID Program word/byte address For SST36VF1601E, valid Word-Addresses for User Sec ID are from 00010H-00017H. For SST36VF1602E, valid Word-Addresses for User Sec ID are from C0010H-C0017H. All 4 cycles of User Security ID Program and Program Lock-out must be completed before going back to Read-Array mode. 7. The User Security ID Program Lock-out command must be executed in x16 mode (BYTE#=VIH). 8. The device does not remain in Software Product Identification mode if powered down. 9. A19 and A18 = BKX (Bank Address): address of the bank that is switched to Software ID/CFI Mode With A17-A1 = 0;SST Manufacturer's ID = 00BFH, is read with A0 = 0 SST36VF1601E Device ID = 734BH, is read with A0 = 1 SST36VF1602E Device ID = 734AH, is read with A0 = 1 10. Both Software ID Exit operations are equivalent 11. If users never lock after programming, User Sec ID can be programmed over the previously unprogrammed bits (data=1) using the User Sec ID mode again (the programmed "0" bits cannot be reversed to "1"). For SST36VF1601E, valid Word-Addresses for User Sec ID are from 00010H-00017H. For SST36VF1602E, valid Word-Addresses for User Sec ID are from C0010H-C0017H. (c)2009 Silicon Storage Technology, Inc. S71274-04-000 13 11/09 16 Mbit Concurrent SuperFlash SST36VF1601E / SST36VF1602E Data Sheet TABLE 7: CFI Query Identification String1 Address x16 Mode 10H 11H 12H 13H 14H 15H 16H 17H 18H 19H 1AH Address x8 Mode 20H 22H 24H 26H 28H 2AH 2CH 2EH 30H 32H 34H Data2 0051H 0052H 0059H 0001H 0007H 0000H 0000H 0000H 0000H 0000H 0000H Description Query Unique ASCII string "QRY" Primary OEM command set Address for Primary Extended Table Alternate OEM command set (00H = none exists) Address for Alternate OEM extended Table (00H = none exits) T7.0 1274 1. Refer to CFI publication 100 for more details. 2. In x8 mode, only the lower byte of data is output. TABLE 8: System Interface Information Address x16 Mode Address x8 Mode Data1 Description 1BH 36H 0027H VDD Min (Program/Erase) 1CH 38H 0036H VDD Max (Program/Erase) DQ7-DQ4: Volts, DQ3-DQ0: 100 millivolts DQ7-DQ4: Volts, DQ3-DQ0: 100 millivolts 1DH 3AH 0000H VPP min (00H = no VPP pin) 1EH 3CH 0000H VPP max (00H = no VPP pin) 1FH 3EH 0004H Typical time out for Program 2N s (24 = 16 s) 20H 40H 0000H Typical time out for min size buffer program 2N s (00H = not supported) 21H 42H 0004H Typical time out for individual Sector/Block-Erase 2N ms (24 = 16 ms) 22H 44H 0006H Typical time out for Chip-Erase 2N ms (26 = 64 ms) 23H 46H 0001H Maximum time out for Program 2N times typical (21 x 24 = 32 s) 24H 48H 0000H Maximum time out for buffer program 2N times typical 25H 4AH 0001H Maximum time out for individual Sector-/Block-Erase 2N times typical (21 x 24 = 32 ms) 26H 4CH 0001H Maximum time out for Chip-Erase 2N times typical (21 x 26 = 128 ms) T8.0 1274 1. In x8 mode, only the lower byte of data is output. (c)2009 Silicon Storage Technology, Inc. S71274-04-000 14 11/09 16 Mbit Concurrent SuperFlash SST36VF1601E / SST36VF1602E Data Sheet TABLE 9: Device Geometry Information Address x16 Mode 27H 28H 29H 2AH 2BH 2CH 2DH 2EH 2FH 30H 31H 32H 33H 34H Address x8 Mode 4EH 50H 52H 54H 56H 58H 5AH 5CH 5EH 60H 62H 64H 66H 68H Data1 0015H 0002H 0000H 0000H 0000H 0002H 00FFH 0001H 0010H 0000H 001FH 0000H 0000H 0001H Description Device size = 2N Bytes (15H = 21; 221 = 2 MByte) Flash Device Interface description; 0002H = x8/x16 asynchronous interface Maximum number of bytes in multi-byte write = 2N (00H = not supported) Number of Erase Sector/Block sizes supported by device Sector Information (y + 1 = Number of sectors; z x 256B = sector size) y = 511 + 1 = 512 sectors (01FFH = 512) z = 16 x 256 Bytes = 4 KByte/sector (0010H = 16) Block Information (y + 1 = Number of blocks; z x 256B = block size) y = 31 + 1 = 32 blocks (001FH = 31) z = 256 x 256 Bytes = 64 KByte/block (0100H = 256) T9.1 1274 1. In x8 mode, only the lower byte of data is output. (c)2009 Silicon Storage Technology, Inc. S71274-04-000 15 11/09 16 Mbit Concurrent SuperFlash SST36VF1601E / SST36VF1602E Data Sheet Absolute Maximum Stress Ratings (Applied conditions greater than those listed under "Absolute Maximum Stress Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these conditions or conditions greater than those defined in the operational sections of this data sheet is not implied. Exposure to absolute maximum stress rating conditions may affect device reliability.) Temperature Under Bias . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55C to +125C Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65C to +150C D. C. Voltage on Any Pin to Ground Potential . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to VDD+0.5V Transient Voltage (<20 ns) on Any Pin to Ground Potential . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -2.0V to VDD+2.0V Package Power Dissipation Capability (TA = 25C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W Surface Mount Solder Reflow Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260C for 10 seconds Output Short Circuit Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA Operating Range: Range Ambient Temp VDD 0C to +70C 2.7-3.6V -40C to +85C 2.7-3.6V Commercial Industrial AC Conditions of Test Input Rise/Fall Time . . . . . . . . . . . . . . 5 ns Output Load . . . . . . . . . . . . . . . . . . . . CL = 30 pF See Figures 22 and 23 (c)2009 Silicon Storage Technology, Inc. S71274-04-000 16 11/09 16 Mbit Concurrent SuperFlash SST36VF1601E / SST36VF1602E Data Sheet TABLE 10: DC Operating Characteristics VDD = 2.7-3.6V Limits Symbol Parameter IDD1 Active VDD Current Read Freq Min Max Units 5 MHz 15 mA 1 MHz 4 mA Program and Erase Concurrent Read/Write 30 mA 5 MHz 45 mA 1 MHz 35 mA Test Conditions CE#=VIL, WE#=OE#=VIH CE#=WE#=VIL, OE#=VIH CE#=VIL, OE#=VIH ISB Standby VDD Current 20 A CE#, RST#=VDD0.3V IALP Auto Low Power VDD Current 20 A CE#=0.1V, VDD=VDD Max WE#=VDD-0.1V Address inputs=0.1V or VDD-0.1V IRT Reset VDD Current 20 A RST#=GND ILI Input Leakage Current 1 A VIN =GND to VDD, VDD=VDD Max ILIW Input Leakage Current on WP# pin and RST# pin 10 A WP#=GND to VDD, VDD=VDD Max RST#=GND to VDD, VDD=VDD Max ILO Output Leakage Current 1 A VOUT =GND to VDD, VDD=VDD Max VIL Input Low Voltage 0.8 V VDD=VDD Min VILC Input Low Voltage (CMOS) 0.3 V VDD=VDD Max VIH Input High Voltage 0.7 VDD VDD+0.3 V VDD=VDD Max VIHC Input High Voltage (CMOS) VDD-0.3 VDD+0.3 V VDD=VDD Max VOL Output Low Voltage 0.2 V IOL=100 A, VDD=VDD Min VOH Output High Voltage V IOH=-100 A, VDD=VDD Min VDD-0.2 T10.1 1274 1. Address input = VILT/VIHT, VDD=VDD Max (See Figure 22) TABLE 11: Recommended System Power-up Timings Symbol TPU-READ Parameter 1 TPU-WRITE1 Minimum Units Power-up to Read Operation 100 s Power-up to Write Operation 100 s T11.0 1274 1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter. TABLE 12: Capacitance (TA = 25C, f=1 Mhz, other pins open) Parameter Description Test Condition Maximum CI/O1 I/O Pin Capacitance VI/O = 0V 10 pF Input Capacitance VIN = 0V 10 pF CIN 1 T12.0 1274 1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter. TABLE 13: Reliability Characteristics Symbol NEND 1 Parameter Minimum Specification Endurance TDR1 Data Retention ILTH1 Latch Up Units Test Method 10,000 Cycles JEDEC Standard A117 100 Years JEDEC Standard A103 100 + IDD mA JEDEC Standard 78 T13.0 1274 1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter. (c)2009 Silicon Storage Technology, Inc. S71274-04-000 17 11/09 16 Mbit Concurrent SuperFlash SST36VF1601E / SST36VF1602E Data Sheet AC CHARACTERISTICS TABLE 14: Read Cycle Timing Parameters VDD = 2.7-3.6V Symbol Parameter TRC Read Cycle Time TCE Chip Enable Access Time 70 TAA Address Access Time 70 ns TOE Output Enable Access Time 30 ns TCLZ1 CE# Low to Active Output 0 ns TOLZ1 OE# Low to Active Output 0 ns TCHZ1 CE# High to High-Z Output 16 ns TOHZ1 OE# High to High-Z Output 16 ns TOH1 Output Hold from Address Change 0 ns TRP1 RST# Pulse Width 500 ns RST# High before Read 50 TRHR 1 TRY1,2 Min Max Units 70 RST# Pin Low to Read Mode ns ns ns 20 s T14.1 1274 1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter. 2. This parameter applies to Sector-Erase, Block-Erase, and Program operations. This parameter does not apply to Chip-Erase operations. TABLE 15: Program/Erase Cycle Timing Parameters Symbol Parameter TBP Program Time TAS Address Setup Time 0 ns TAH Address Hold Time 40 ns TCS WE# and CE# Setup Time 0 ns TCH WE# and CE# Hold Time 0 ns TOES OE# High Setup Time 0 ns TOEH OE# High Hold Time 10 ns TCP CE# Pulse Width 40 ns TWP WE# Pulse Width 40 ns TWPH1 WE# Pulse Width High 30 ns TCPH1 CE# Pulse Width High 30 ns TDS Data Setup Time 30 ns TDH1 Data Hold Time 0 ns TIDA 1 Min Max Units 10 s Software ID Access and Exit Time 150 ns TSE Sector-Erase 25 ms TBE Block-Erase 25 ms TSCE Chip-Erase 50 ms TES Erase-Suspend Latency 10 s TBY1,2 RY/BY# Delay Time 90 ns TBR1 Bus Recovery Time 0 s T15.1 1274 1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter. 2. This parameter applies to Sector-Erase, Block-Erase, and Program operations. This parameter does not apply to Chip-Erase operations. (c)2009 Silicon Storage Technology, Inc. S71274-04-000 18 11/09 16 Mbit Concurrent SuperFlash SST36VF1601E / SST36VF1602E Data Sheet TRC TAA ADDRESSES TCE CE# TOE OE# TOHZ TOLZ VIH WE# HIGH-Z DQ15-0 TCHZ TOH TCLZ DATA VALID DATA VALID HIGH-Z 1274 F05.0 FIGURE 8: Read Cycle Timing Diagram TBP 555 ADDRESSES 2AA 555 ADDR TAH TWP WE# TAS TWPH OE# TCH CE# TBY TCS TBR RY/BY# TDS TDH DQ15-0 XXAA XX55 DATA VALID WORD (ADDR/DATA) 1274 F06.0 XXA0 Note: X can be VIL or VIH, but no other value. FIGURE 9: WE# Controlled Program Cycle Timing Diagram (c)2009 Silicon Storage Technology, Inc. S71274-04-000 19 11/09 16 Mbit Concurrent SuperFlash SST36VF1601E / SST36VF1602E Data Sheet 555 ADDRESSES 2AA 555 ADDR TAH TCP CE# TAS TCPH OE# TCH WE# TBY TCS TBR RY/BY# TDS TDH XXAA DQ15-0 XX55 XXA0 VALID DATA WORD (ADDR/DATA) 1274 F07.0 Note: X can be VIL or VIH, but no other value. FIGURE 10: CE# Controlled Program Cycle Timing Diagram ADDRESS A19-0 TCE CE# TOES TOEH OE# TOE WE# TBY RY/BY# DQ7 DATA DATA# DATA# DATA 1274 F08.0 FIGURE 11: Data# Polling Timing Diagram (c)2009 Silicon Storage Technology, Inc. S71274-04-000 20 11/09 16 Mbit Concurrent SuperFlash SST36VF1601E / SST36VF1602E Data Sheet ADDRESSES TCE CE# TOE TOEH OE# WE# TBR VALID DATA DQ6 TWO READ CYCLES WITH SAME OUTPUTS 1274 F09.0 FIGURE 12: Toggle Bit Timing Diagram TSCE SIX-BYTE CODE FOR CHIP-ERASE ADDRESSES 555 2AA 555 555 2AA 555 CE# OE# TWP WE# TBY TBR RY/BY# DQ15-0 XXAA XX55 XX80 XXAA XX55 XX10 VALID 1274 F10.0 Note: This device also supports CE# controlled Chip-Erase operation. The WE# and CE# signals are interchageable as long as minimum timings are met. (See Table 14) X can be VIL or VIH, but no other value. FIGURE 13: WE# Controlled Chip-Erase Timing Diagram (c)2009 Silicon Storage Technology, Inc. S71274-04-000 21 11/09 16 Mbit Concurrent SuperFlash SST36VF1601E / SST36VF1602E Data Sheet TBE SIX-BYTE CODE FOR BLOCK-ERASE ADDRESSES 555 2AA 555 555 2AA BAX CE# OE# TWP WE# TBR TBY RY/BY# DQ15-0 XXAA XX55 XX80 XXAA XX55 VALID XX50 1274 F11.0 Note: This device also supports CE# controlled Block-Erase operation. The WE# and CE# signals are interchageable as long as minimum timings are met. (See Table 14) BAX = Block Address X can be VIL or VIH, but no other value. FIGURE 14: WE# Controlled Block-Erase Timing Diagram TSE SIX-BYTE CODE FOR SECTOR-ERASE ADDRESSES 555 2AA 555 555 2AA SAX CE# OE# TWP WE# TBY TBR RY/BY# DQ15-0 XXAA XX55 XX80 XXAA XX55 VALID XX30 1274 F12.0 Note: This device also supports CE# controlled Sector-Erase operation. The WE# and CE# signals are interchageable as long as minimum timings are met. (See Table 14) SAX = Sector Address X can be VIL or VIH, but no other value. FIGURE 15: WE# Controlled Sector-Erase Timing Diagram (c)2009 Silicon Storage Technology, Inc. S71274-04-000 22 11/09 16 Mbit Concurrent SuperFlash SST36VF1601E / SST36VF1602E Data Sheet THREE-BYTE SEQUENCE FOR SOFTWARE ID ENTRY 555 ADDRESSES 2AA 555 0000 0001 CE# OE# TIDA TWP WE# TWPH DQ15-0 XXAA XX55 TAA XX90 00BF Device ID 1274 F13.0 Device ID = 734BH for SST36VF1601E and 734AH for SST36VF1602E Note: X can be VIL or VIH, but no other value. FIGURE 16: Software ID Entry and Read THREE-BYTE SEQUENCE FOR CFI QUERY ENTRY ADDRESSES 555 2AA 555 CE# OE# TIDA TWP WE# TWPH DQ15-0 XXAA XX55 TAA XX98 1274 F14.0 Note: X can be VIL or VIH, but no other value. FIGURE 17: CFI Entry and Read (c)2009 Silicon Storage Technology, Inc. S71274-04-000 23 11/09 16 Mbit Concurrent SuperFlash SST36VF1601E / SST36VF1602E Data Sheet THREE-BYTE SEQUENCE FOR SOFTWARE ID EXIT AND RESET ADDRESSES 555 DQ15-0 2AA XXAA 555 XX55 XXF0 TIDA CE# OE# TWP WE# TWPH 1274 F15.0 Note: X can be VIL or VIH, but no other value. FIGURE 18: Software ID Exit/CFI Exit THREE-BYTE SEQUENCE FOR CFI QUERY ENTRY 555 ADDRESS A19-0 2AA 555 CE# OE# TIDA TWP WE# TWPH DQ15-0 TAA XXAA XX55 XX88 SW0 SW1 SW2 1274 F16.0 Note: WP# must be held in proper logic state (VIL or VIH) 1 s prior to and 1 s after the command sequence X can be VIL or VIH, but no other value. FIGURE 19: Sec ID Entry (c)2009 Silicon Storage Technology, Inc. S71274-04-000 24 11/09 16 Mbit Concurrent SuperFlash SST36VF1601E / SST36VF1602E Data Sheet RY/BY# 0V TRP RST# CE#/OE# TRHR 1274 F17.0 FIGURE 20: RST# Timing Diagram (When no internal operation is in progress) TRY RY/BY# RST# TRP CE# TBR OE# 1274 F18.0 FIGURE 21: RST# Timing Diagram (During Sector- or Block-Erase operation) (c)2009 Silicon Storage Technology, Inc. S71274-04-000 25 11/09 16 Mbit Concurrent SuperFlash SST36VF1601E / SST36VF1602E Data Sheet VIHT INPUT VIT REFERENCE POINTS VOT OUTPUT VILT 1274 F19.0 AC test inputs are driven at VIHT (0.9 VDD) for a logic "1" and VILT (0.1 VDD) for a logic "0". Measurement reference points for inputs and outputs are VIT (0.5 VDD) and VOT (0.5 VDD). Input rise and fall times (10% 90%) are <5 ns. Note: VIT - VINPUT Test VOT - VOUTPUT Test VIHT - VINPUT HIGH Test VILT - VINPUT LOW Test FIGURE 22: AC Input/Output Reference Waveforms TO TESTER TO DUT CL 1274 F20.0 FIGURE 23: A Test Load Example (c)2009 Silicon Storage Technology, Inc. S71274-04-000 26 11/09 16 Mbit Concurrent SuperFlash SST36VF1601E / SST36VF1602E Data Sheet Start Load data: XXAAH Address: 555H Load data: XX55H Address: 2AAH Load data: XXA0H Address: 555H Load Address/Data Wait for end of Program (TBP, Data# Polling bit, or Toggle bit operation) Program Completed 1274 F21.0 Note: X can be VIL or VIH, but no other value. FIGURE 24: Program Algorithm (c)2009 Silicon Storage Technology, Inc. S71274-04-000 27 11/09 16 Mbit Concurrent SuperFlash SST36VF1601E / SST36VF1602E Data Sheet Internal Timer Toggle Bit Data# Polling Program/Erase Initiated Program/Erase Initiated Program/Erase Initiated Read byte/word Read DQ7 Wait TBP, TSCE, TSE or TBE Read same byte/word Program/Erase Completed No Is DQ7 = true data? Yes No Does DQ6 match? Program/Erase Completed Yes Program/Erase Completed 1274 F22.0 FIGURE 25: Wait Options (c)2009 Silicon Storage Technology, Inc. S71274-04-000 28 11/09 16 Mbit Concurrent SuperFlash SST36VF1601E / SST36VF1602E Data Sheet Software Product ID Entry Command Sequence CFI Query Entry Command Sequence Sec ID Query Entry Command Sequence Load data: XXAAH Address: 555H Load data: XXAAH Address: 555H Load data: XXAAH Address: 555H Load data: XX55H Address: 2AAH Load data: XX55H Address: 2AAH Load data: XX55H Address: 2AAH Load data: XX90H Address: 555H Load data: XX98H Address: 555H Load data: XX88H Address: 555H Wait TIDA Wait TIDA Wait TIDA Read Software ID Read CFI data Read Sec ID X can be VIL or VIH, but no other value 1274 F23.0 FIGURE 26: Software Product ID/CFI/Sec ID Entry Command Flowcharts (c)2009 Silicon Storage Technology, Inc. S71274-04-000 29 11/09 16 Mbit Concurrent SuperFlash SST36VF1601E / SST36VF1602E Data Sheet Software ID Exit/CFI Exit/Sec ID Exit Command Sequence Load data: XXAAH Address: 555H Load data: XXF0H Address: XXH Load data: XX55H Address: 2AAH Wait TIDA Load data: XXF0H Address: 555H Return to normal operation Wait TIDA Return to normal operation X can be VIL or VIH, but no other value 1274 F24.0 FIGURE 27: Software Product ID/CFI/Sec ID Exit Command Flowcharts (c)2009 Silicon Storage Technology, Inc. S71274-04-000 30 11/09 16 Mbit Concurrent SuperFlash SST36VF1601E / SST36VF1602E Data Sheet Chip-Erase Command Sequence Sector-Erase Command Sequence Block-Erase Command Sequence Load data: XXAAH Address: 555H Load data: XXAAH Address: 555H Load data: XXAAH Address: 555H Load data: XX55H Address: 2AAH Load data: XX55H Address: 2AAH Load data: XX55H Address: 2AAH Load data: XX80H Address: 555H Load data: XX80H Address: 555H Load data: XX80H Address: 555H Load data: XXAAH Address: 555H Load data: XXAAH Address: 555H Load data: XXAAH Address: 555H Load data: XX55H Address: 2AAH Load data: XX55H Address: 2AAH Load data: XX55H Address: 2AAH Load data: XX10H Address: 555H Load data: XX30H Address: SAX Load data: XX50H Address: BAX Wait TSCE Wait TSE Wait TBE Chip erased to FFFFH Sector erased to FFFFH Block erased to FFFFH 1274 F25.0 Note: X can be VIL or VIH, but no other value. FIGURE 28: Erase Command Sequence (c)2009 Silicon Storage Technology, Inc. S71274-04-000 31 11/09 16 Mbit Concurrent SuperFlash SST36VF1601E / SST36VF1602E Data Sheet PRODUCT ORDERING INFORMATION SST 36 XX VF 1601E - 70 XX XXXXX - XXX - 4C XX - B3K - XXX E X Environmental Attribute E1 = non-Pb Package Modifier K = 48 balls or leads Package Type B3 = TFBGA (6mm x 8mm) E =TSOP (type 1, die up, 12mm x 20mm) Temperature Range C = Commercial = 0C to +70C I = Industrial = -40C to +85C Minimum Endurance 4 = 10,000 cycles Read Access Speed 70 = 70 ns Bank Split 1 = 12 Mbit + 4 Mbit 2 = 4 Mbit + 12 Mbit Device Density 160 = 1 Mbit x16 or 2 Mbit x8 Voltage V = 2.7-3.6V Product Series 36 = Concurrent SuperFlash 1. Environmental suffix "E" denotes non-Pb solder. SST non-Pb solder devices are "RoHS Compliant". Valid combinations for SST36VF1601E SST36VF1601E-70-4C-B3KE SST36VF1601E-70-4C-EKE SST36VF1601E-70-4I-B3KE SST36VF1601E-70-4I-EKE Valid combinations for SST36VF1602E SST36VF1602E-70-4C-B3KE SST36VF1602E-70-4C-EKE SST36VF1602E-70-4I-B3KE SST36VF1602E-70-4I-EKE Note: Valid combinations are those products in mass production or will be in mass production. Consult your SST sales representative to confirm availability of valid combinations and to determine availability of new combinations. (c)2009 Silicon Storage Technology, Inc. S71274-04-000 32 11/09 16 Mbit Concurrent SuperFlash SST36VF1601E / SST36VF1602E Data Sheet PACKAGING DIAGRAMS TOP VIEW BOTTOM VIEW 8.00 0.20 5.60 0.45 0.05 (48X) 0.80 6 6 5 5 4.00 4 4 6.00 0.20 3 3 2 2 1 1 0.80 A B C D E F G H A1 CORNER SIDE VIEW H G F E D C B A A1 CORNER 1.10 0.10 0.12 SEATING PLANE 1mm 0.35 0.05 Note: 1. Complies with JEDEC Publication 95, MO-210, variant 'AB-1', although some dimensions may be more stringent. 2. All linear dimensions are in millimeters. 3. Coplanarity: 0.12 mm 4. Ball opening size is 0.38 mm ( 0.05 mm) 48-tfbga-B3K-6x8-450mic-4 FIGURE 29: 48-ball Thin-profile, Fine-pitch Ball Grid Array (TFBGA) 6mm x 8mm SST Package Code: B3K (c)2009 Silicon Storage Technology, Inc. S71274-04-000 33 11/09 16 Mbit Concurrent SuperFlash SST36VF1601E / SST36VF1602E Data Sheet 1.05 0.95 Pin # 1 Identifier 0.50 BSC 0.27 0.17 12.20 11.80 0.15 0.05 18.50 18.30 DETAIL 1.20 max. 0.70 0.50 20.20 19.80 0- 5 Note: 1. Complies with JEDEC publication 95 MO-142 DD dimensions, although some dimensions may be more stringent. 2. All linear dimensions are in millimeters (max/min). 3. Coplanarity: 0.1 mm 4. Maximum allowable mold flash is 0.15 mm at the package ends, and 0.25 mm between leads. 0.70 0.50 1mm 48-tsop-EK-8 FIGURE 30: 48-lead Thin Small Outline Package (TSOP) 12mm x 20mm SST Package Code: EK + (c)2009 Silicon Storage Technology, Inc. S71274-04-000 34 11/09 16 Mbit Concurrent SuperFlash SST36VF1601E / SST36VF1602E Data Sheet TABLE 16: Revision History Number Description Date 00 * Initial release of data sheet 01 * Updates to data sheet Tables 1, 4, 5, 8, 9, and 13. Added RoHS compliance information Mar 2005 on page 1 and in the "Product Ordering Information" on page 32 Updated sector information in Table 9, "Device Geometry Information" on page 15 Updated Active Current values and test conditions in Table 10 on page 17 Updated OE timings in Table 14 on page 18 Added a Reset footnote to Table 5 on page 12 Updated the footnote for Table 2 on page 4 Corrected the Address Format in footnote 1 in Table 6 on page 13 Clarified the solder temperature profile under "Absolute Maximum Stress Ratings" on page 16 * * * * * * * Oct 2004 02 * * Updated "Erase-Suspend/Erase-Resume Operations" on page 3 Updated TES parameter from 20 s to 10 s in Table 15 on page 18 Jul 2005 03 * Made changes to support Pb-free packages only Nov 2005 04 * Edited Tby TY/BY# Delay Time in Table 15 on page 18 from 90ns Min to 90ns Max Nov 2009 Silicon Storage Technology, Inc. * 1171 Sonora Court * Sunnyvale, CA 94086 * Telephone 408-735-9110 * Fax 408-735-9036 www.SuperFlash.com or www.sst.com (c)2009 Silicon Storage Technology, Inc. S71274-04-000 35 11/09