ISSUED DATE :2003/10/22 REVISED DATE :2004/11/29B GSD1857 N P N E P I TA X I A L P L A N A R T R A N S I S T O R POWER TRANSISTOR FEATURES *High breakdown voltage. (BVCEO=120V). *Low collector output capacitance. (Type.20pF at VCB=10V) *High transition frequency. (fT=80MHz) Package Dimensions D E TO-92 A S1 b1 S E A T IN G PLANE Millimeter Min. Max. 4.45 4.7 1.02 0.36 0.51 0.36 0.76 0.36 0.51 L REF. e1 e b A S1 b b1 C C REF. D E L e1 e Millimeter Min. Max. 4.44 4.7 3.30 3.81 12.70 1.150 1.390 2.42 2.66 Absolute Maximum Ratings (Ta = 25 ) Parameter VCBO VCEO VEBO IC ICP Tj TsTG PD Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collect Current(DC) Collect Current*(Pulse) Junction Temperature Storage Temperature Range Total Power Dissipation Ratings Unit 120 120 5 2 3 +150 -55 ~ +150 1 V V V A A W Electrical Characteristics (Ta = 25 ) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) hFE fT Cob Min. 120 120 Typ. - Max. - 5 82 - - 1 1 400 390 - Classification Of hFE1 Rank Range 80 20 Unit V V V uA uA mV MHz pF Test Conditions IC=50uA IC=1mA IE=50uA VCB=100V VBE=4V lC=1A,IB=100mA VCE=5V,IC=0.1A VCE=5V,IE=100mA, f=30MHz VCB=10V, IE=0A,f=1MHz *Measured using pulse current. P 82-180 Q 120-270 R 180-390 Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 GSD1857 Page: 1/1