WMS512K8-XXX
April 2012 © 2012 Microsemi Corporation. All rights reserved. 1 Microsemi Corporation • (602) 437-1520 • www.microsemi.com/pmgp
Rev. 13 www.whiteedc.com
Microsemi Corporation reserves the right to change products or specifi cations without notice.
512Kx8 MONOLITHIC SRAM, SMD 5962-95613
FEATURES
Access Times 15, 17, 20, 25, 35, 45, 55ns
MIL-STD-883 Compliant Devices Available
Revolutionary, Center Power/Ground Pinout JEDEC
Approved
• 36 lead Ceramic SOJ (Package 100)
• 36 lead Ceramic Flat Pack (Package 226)
Evolutionary, Corner Power/Ground Pinout JEDEC
Approved
• 32 pin Ceramic DIP (Package 300)
• 32 lead Ceramic SOJ (Package 101)
• 32 lead Ceramic Thinpack™ Flat Pack (Package 321)
• 32 pin, Rectangular Ceramic Leadless Chip Carrier
(Package 601)
• Commercial, Industrial and Military Temperature Range
• 5V Power Supply
• Low Power CMOS
• Low Power Data Retention for Battery Back-up Operation
• TTL Compatible Inputs and Outputs
*This product is subject to change without notice.
TOP VIEW
EVOLUTIONARY PINOUTREVOLUTIONARY PINOUT
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
21
20
19
A0
A1
A2
A3
A4
CS#
I/O0
I/O1
VCC
VSS
I/O2
I/O3
WE#
A5
A6
A7
A8
A9
NC
A18
A17
A16
A15
OE#
I/O7
I/O6
VSS
VCC
I/O5
I/O4
A14
A13
A12
A11
A10
NC
A18
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
I/O2
VSS
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
VCC
A15
A17
WE#
A13
A8
A9
A11
OE#
A10
CS#
I/O7
I/O6
I/O5
I/O4
I/O3
5
6
7
8
9
10
11
12
13
29
28
27
26
25
24
23
22
21
4 3 2 1 32 31 30
14 15 16 17 18 19 20
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
I/O2
VSS
I/O3
I/O4
I/O5
I/O6
WE
#
A13
A8
A9
A11
OE#
A10
CS#
I/O7
A12
A14
A16
A18
VCC
A15
A17
36 FLAT PACK
36 CSOJ
TOP VIEW TOP VIEW
32 DIP
32 CSOJ (DE)
32 FLAT PACK (FF) 32 CLCC
PIN DESCRIPTION
A0-18 Address Inputs
I/O 0-7 Data Input/Output
CS# Chip Select
OE# Output Enable
WE# Write Enable
VCC +5.0V Power
GND Ground
WMS512K8-XXX
April 2012 © 2012 Microsemi Corporation. All rights reserved. 2 Microsemi Corporation • (602) 437-1520 • www.microsemi.com/pmgp
Rev. 13 www.whiteedc.com
Microsemi Corporation reserves the right to change products or specifi cations without notice.
Capacitance
(TA = +25°C)
Parameter
Symbol
Conditions Package Speed (ns) Max Unit
Input capacitance CIN
VIN = 0 V, f = 1.0 MHz
32 pin CSOJ, DIP, Flat Pack Evolutionary 15 to 55 20 pF
32 pin CLCC 15 to 55 15 pF
36 pin CSOJ & Flat Pack Revolutionary 15 to 35 12 pF
45 to 55 20 pF
Output capacitance COUT
VOUT = 0 V, f = 1.0 MHz
32 pin CSOJ, DIP, Flat Pack Revolutionary 15 to 55 20 pF
36 pin CSOJ & Flat Pack Revolutionary 15 to 35 12 pF
45 to 55 20 pF
This parameter is guaranteed by design but not tested.
DC Characteristics – CMOS Compatible
(VCC = 5.0V, GND = 0V, -55°C ≤ TA ≤ 125°C)
Parameter Symbol Conditions Min Max Unit
Input Leakage Current ILI VCC = 5.5, VIN = GND to VCC 10 μA
Output Leakage Current ILO CS# = VIH, OE# = VIH, VOUT = GND TO VCC 10 μA
Operating Supply Current* ICC CS# = VIL, OE# = VIH, f = 5MHz, VCC = 5.5, 160 mA
Standby Current ISS CS# = VIH, OE# = VIH, f = 5MHz, VCC = 5.5 0.45 mA
Output Low Voltage VOL IOL = 6mA for 17 - 35ns,
IOL = 2.1mA for 45 - 55ns, VCC = 4.5
0.4 V
Output High Voltage VOH IOH = -4.0mA for 17 - 35ns,
IOH = 1.0mA for 45 - 55ns, VCC = 4.5
2.4 V
Data retention characteristics for low power “l” version
Parameter Symbol Conditions Min Max Unit
Data Retention Supply Voltage VDR CS#3 VCC -0.2V 2.0 5.5 V
Low Power Data Retention ICCDR1 VCC = 3V 7 mA
Low Power Data Retention ICCDR2 VCC = 2V 2 mA
Absolute Maximum Ratings
Parameter Symbol Min Max Unit
Operating Temperature TA-55 +125 °C
Storage Temperature Range TSTG -65 +150 °C
Signal Voltage Range to GND VG-0.5 VCC+0.5 V
Junction Temperature TJ150 °C
Supply Voltage Range (VCC)V
CC -0.5 7.0 V
Truth Table
CS# OE# WE# MODE DATA I/O POWER
H X X Standby High Z Standby
L L H Read Data Out Active
L X L Write Data In Active
L H H Out Disable High Z Acvive
Recommended Operating Conditions
Parameter Symbol Min Max Unit
Supply Voltage VCC 4.5 5.5 V
Input High Voltage VIH 2.2 VCC + 0.3 V
Input Low Voltage VIL -0.3 +0.8 V
Operating Temp. (Mil) TA-55 +125 °C
WMS512K8-XXX
April 2012 © 2012 Microsemi Corporation. All rights reserved. 3 Microsemi Corporation • (602) 437-1520 • www.microsemi.com/pmgp
Rev. 13 www.whiteedc.com
Microsemi Corporation reserves the right to change products or specifi cations without notice.
AC Characteristics
(VCC = 5.0V, GND = 0V, -55°C ≤ TA ≤ 125°C)
Parameter Symbol -15 -17 -20 -25 -35 -45 -55 Unit
Min Max Min Max Min Max Min Max Min Max Min Max Min Max
Read Cycle Time tRC 15 17 20 25 35 45 55 ns
Address Access Time tAA 15 17 20 25 35 45 55 ns
Output Hold from Address Change tOH 0000000 ns
Chip Select Access Time tACS 15 17 20 25 35 45 55 ns
Output Enable to Output Valid tOE 8 9 10 12 25 25 25 ns
Chip Select to Output in Low Z tCLZ1 2222444 ns
Output Enable to Output in Low Z tOLZ1 0000000 ns
Chip Disable to Output in High Z tCHZ1 8 9 10 12 15 20 20 ns
Output Disable to Output in High Z tOHZ1 8 9 10 12 15 20 20 ns
AC Characteristics
(VCC = 5.0V, GND = 0V, -55°C ≤ TA ≤ 125°C)
Parameter Symbol -15 -17 -20 -25 -35 -45 -55 Unit
Min Max Min Max Min Max Min Max Min Max Min Max Min Max
Write Cycle Time tWC 15 17 20 25 35 45 55 ns
Chip Select to End of Write tCW 13 14 14 15 25 35 50 ns
Address Valid to End of Write tAW 13 14 14 15 25 35 50 ns
Data Valid to End of Write tDW 8 9 10 10 20 25 25 ns
Write Pulse Width tWP 13 14 14 15 25 35 40 ns
Address Setup Time tAS 2222222 ns
Address Hold Time tAH 0000055 ns
Output Active from End of Write tOW1 2234455 ns
Write Enable to Output in High Z tWHZ1 8 9 9 10 15 20 25 ns
Data Hold Time tDH 0000000 ns
1. This parameter is guaranteed by design but not tested.
AC Test Circuit AC Test Conditions
Parameter Typ Unit
Input Pulse Levels VIL = 0, VIH = 3.0 V
Input Rise and Fall 5 ns
Input and Output Reference Level 1.5 V
Output Timing Reference Level 1.5 V
NOTES:
VZ is programmable from -2V to +7V.
IOL & IOH programmable from 0 to 16mA.
Tester Impedance Z0 = 75 .
VZ is typically the midpoint of VOH and VOL.
IOL & IOH are adjusted to simulate a typical resistive load circuit.
ATE tester includes jig capacitance.
Current Source
Current Source
IOL
IOH
Ceff = 50 pF
D.U.T. VZ ≈ 1.5V
(Bipolar Supply)
WMS512K8-XXX
April 2012 © 2012 Microsemi Corporation. All rights reserved. 4 Microsemi Corporation • (602) 437-1520 • www.microsemi.com/pmgp
Rev. 13 www.whiteedc.com
Microsemi Corporation reserves the right to change products or specifi cations without notice.
TIMING WAVEFORM – READ CYCLE
A
DDRESS
DATA I/O
READ CYCLE 1 (CS# = OE# = VIL, WE# = VIH)
tAA
tOH
tRC
DATA VALIDPREVIOUS DATA VALID
A
DDRESS
DATA I/O
CS#
OE#
tRC
tAA
tACS
tCLZ
tCHZ
tOE
tOLZ
tOHZ
HIGH IMPEDANCE
DATA VALID
READ CYCLE 2 (WE# = VIH)
WRITE CYCLE – WE# CONTROLLED
A
DDRESS
DATA I/O
WRITE CYCLE 1, WE# CONTROLLED
tAW
tCW tAH
tWP
tDW
tWHZ
tAS
tOW
tDH
tWC
DATA VALID
CS#
WE#
WRITE CYCLE – CS# CONTROLLED
A
DDRESS
DATA I/O
WRITE CYCLE 2, CS# CONTROLLED
tAW
tAS tCW tAH
tWP
tDHtDW
tWC
CS#
WE#
DATA VALID
WMS512K8-XXX
April 2012 © 2012 Microsemi Corporation. All rights reserved. 5 Microsemi Corporation • (602) 437-1520 • www.microsemi.com/pmgp
Rev. 13 www.whiteedc.com
Microsemi Corporation reserves the right to change products or specifi cations without notice.
PACKAGE 100: 36 LEAD, CERAMIC SOJ
PACKAGE 101: 32 LEAD, CERAMIC SOJ
23.37 (0.920) ± 0.25 (0.010)
11.23 (0.442)
± 0.30 (0.012)
0.2 (0.008)
± 0.05 (0.002)
1.27 (0.050) TYP
21.6 (0.850) TYP
9.55 (0.376) ± 0.25 (0.010)
1.27 (0.050) ± 0.25 (0.010)
4.7 (0.184) MAX
0.89 (0.035)
Radius TYP
21.1 (0.830) ± 0.25 (0.010)
1.27 (0.050) TYP
19.1 (0.750) TYP
0.2 (0.008)
± 0.05 (0.002)
9.55 (0.376) ± 0.25 (0.010)
1.27 (0.050) ± 0.25 (0.010)
3.96 (0.156) MAX
0.89 (0.035)
Radius TYP
11.23 (0.442)
± 0.30 (0.012)
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES
WMS512K8-XXX
April 2012 © 2012 Microsemi Corporation. All rights reserved. 6 Microsemi Corporation • (602) 437-1520 • www.microsemi.com/pmgp
Rev. 13 www.whiteedc.com
Microsemi Corporation reserves the right to change products or specifi cations without notice.
PACKAGE 321: 32 PIN CERAMIC THINPACKTM FLATPACK
0.016 ± 0.008
0.838
MAX
0.050
TYP
0.427
0.429
0.567
0.559
0.008
0.005
0.020
0.030
0. 1 1 8
MAX
PACKAGE 226: 36 LEAD, CERAMIC FLAT PACK
23.37 (0.920)
± 0.25 (0.010)
32.64 (1.285) TYP
12.95 (0.510)
± 0.13 (0.005)
3.8 (0.150)
TYP
2.72 (0.107)
MAX
0.127 (0.005)
± 0.05 (0.002)
1.27 (0.050) TYP
21.59 (0.850) TYP
38.1 (1.50) ± 0.4 (0.015)
12.7 (0.500)
± 0.5 (0.020)
5.1 (0.200)
± 0.25 (0.010)
0.43 (0.017)
± 0.05 (0.002)
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES
WMS512K8-XXX
April 2012 © 2012 Microsemi Corporation. All rights reserved. 7 Microsemi Corporation • (602) 437-1520 • www.microsemi.com/pmgp
Rev. 13 www.whiteedc.com
Microsemi Corporation reserves the right to change products or specifi cations without notice.
PACKAGE 300: 32 PIN, CERAMIC DIP, SINGLE CAVITY SIDE BRAZED
2.5 (0.100)
TYP
1.27 (0.050)
± 0.1 (0.005)
0.46 (0.018)
± 0.05 (0.002)
0.99 (0.039)
± 0.51 (0.020)
3.2 (0.125) MIN
0.25 (0.010)
± 0.05 (0.002)
15.25 (0.600)
± 0.25 (0.010)
42.8 (1.686) MAX
5.13 (0.202) MAX
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES
WMS512K8-XXX
April 2012 © 2012 Microsemi Corporation. All rights reserved. 8 Microsemi Corporation • (602) 437-1520 • www.microsemi.com/pmgp
Rev. 13 www.whiteedc.com
Microsemi Corporation reserves the right to change products or specifi cations without notice.
PACKAGE 300: 32 PIN, CERAMIC DIP, SINGLE CAVITY SIDE BRAZED
7.62 (0.300) TYP
5.08
(0.200)
TYP
3.81
(0.150) TYP
10.16
(0.400)
TYP
0.38 (0.015) x 45
PIN 1 IDENTIFIER
0.56 (0.022)
0.71 (0.028)
11.25 (0.443)
14.15 (0.557)
13.79 (0.543)
14.15 (0.557)
1.63 (0.064)
2.54 (0.100)
PIN 1
1.02 (0.040) x 45
3 PLACES
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES
WMS512K8-XXX
April 2012 © 2012 Microsemi Corporation. All rights reserved. 9 Microsemi Corporation • (602) 437-1520 • www.microsemi.com/pmgp
Rev. 13 www.whiteedc.com
Microsemi Corporation reserves the right to change products or specifi cations without notice.
ORDERING INFORMATION
MICROSEMI CORPORATION
MONOLITHIC
SRAM
ORGANIZATION, 512K x 8
IMPROVEMENT MARK:
Blank = Standard
L = Low Power Data Retention
ACCESS TIME (ns)
PACKAGE:
C = 32 pin Ceramic 0.600” DIP (Package 300)
CL = 32 pin Rectangular Ceramic Leadless Chip Carrier (Package 601)
DE = 32 Lead Ceramic SOJ (Package 101) Evolutionary
DJ = 36 Lead Ceramic SOJ (Package 100)
F = 36 Lead Ceramic Flat Pack (Package 226)
FF = 32 Lead Ceramic Thinpack™ Flat Pack (Package 321)
DEVICE GRADE:
Q = MIL-STD-883 Compliant
M = Military Screened -55°C ≤ TA ≤ 125°C
I = Industrial -40°C ≤ TA ≤85°C
C = Commercial 0°C ≤ TA ≤ 70°C
LEAD FINISH:
Blank = Gold plated leads
A = Solder dip leads
W M S 512K 8 X - XXX X X X
WMS512K8-XXX
April 2012 © 2012 Microsemi Corporation. All rights reserved. 10 Microsemi Corporation • (602) 437-1520 • www.microsemi.com/pmgp
Rev. 13 www.whiteedc.com
Microsemi Corporation reserves the right to change products or specifi cations without notice.
DEVICE TYPE SPEED PACKAGE SMD NO.
512K x 8 SRAM Monolithic 55ns 32 pin DIP (C) 5962-95613 05HYX
512K x 8 SRAM Monolithic 45ns 32 pin DIP (C) 5962-95613 06HYX
512K x 8 SRAM Monolithic 35ns 32 pin DIP (C) 5962-95613 07HYX
512K x 8 SRAM Monolithic 25ns 32 pin DIP (C) 5962-95613 08HYX
512K x 8 SRAM Monolithic 20ns 32 pin DIP (C) 5962-95613 09HYX
512K x 8 SRAM Monolithic 17ns 32 pin DIP (C) 5962-95613 10HYX
512K x 8 SRAM Monolithic 15ns 32 pin DIP (C) 5962-95613 14HYX
512K x 8 SRAM Monolithic 55ns 32 lead SOJ Evol (DE) 5962-95613 05HTX
512K x 8 SRAM Monolithic 45ns 32 lead SOJ Evol (DE) 5962-95613 06HTX
512K x 8 SRAM Monolithic 35ns 32 lead SOJ Evol (DE) 5962-95613 07HTX
512K x 8 SRAM Monolithic 25ns 32 lead SOJ Evol (DE) 5962-95613 08HTX
512K x 8 SRAM Monolithic 20ns 32 lead SOJ Evol (DE) 5962-95613 09HTX
512K x 8 SRAM Monolithic 17ns 32 lead SOJ Evol (DE) 5962-95613 10HTX
512K x 8 SRAM Monolithic 15ns 32 lead SOJ Evol (DE) 5962-95613 14HTX
512K x 8 SRAM Monolithic 55ns 36 lead SOJ (DJ) 5962-95613 05HZX
512K x 8 SRAM Monolithic 45ns 36 lead SOJ (DJ) 5962-95613 06HZX
512K x 8 SRAM Monolithic 35ns 36 lead SOJ (DJ) 5962-95613 07HZX
512K x 8 SRAM Monolithic 25ns 36 lead SOJ (DJ) 5962-95613 08HZX
512K x 8 SRAM Monolithic 20ns 36 lead SOJ (DJ) 5962-95613 09HZX
512K x 8 SRAM Monolithic 17ns 36 lead SOJ (DJ) 5962-95613 10HZX
512K x 8 SRAM Monolithic 15ns 36 lead SOJ (DJ) 5962-95613 14HZX
512K x 8 SRAM Monolithic 55ns 36 lead Flatpack (F) 5962-95613 05HXX
512K x 8 SRAM Monolithic 45ns 36 lead Flatpack (F) 5962-95613 06HXX
512K x 8 SRAM Monolithic 35ns 36 lead Flatpack (F) 5962-95613 07HXX
512K x 8 SRAM Monolithic 25ns 36 lead Flatpack (F) 5962-95613 08HXX
512K x 8 SRAM Monolithic 20ns 36 lead Flatpack (F) 5962-95613 09HXX
512K x 8 SRAM Monolithic 17ns 36 lead Flatpack (F) 5962-95613 10HXX
512K x 8 SRAM Monolithic 15ns 36 lead Flatpack (F) 5962-95613 14HXX
WMS512K8-XXX
April 2012 © 2012 Microsemi Corporation. All rights reserved. 11 Microsemi Corporation • (602) 437-1520 • www.microsemi.com/pmgp
Rev. 13 www.whiteedc.com
Microsemi Corporation reserves the right to change products or specifi cations without notice.
Document Title
512Kx8 MONOLITHIC SRAM, SMD 5962-95613
Revision History
Rev # History Release Date Status
Rev 12 Changes (Pg. 1-11)
12.1 Change document layout from White Electronic Designs to Microsemi
12.2 Add document Revision History page
March 2011 Final
Rev 13 Changes (Pg 2)
13.1 Correct typo in Absolute Maximum Ratings – Signal Voltage Range to
Ground Max from VCC-0.5 to VCC+0.5
13.1 Correct typo in DC Characteristics – CMOS Compatible - Operating Supply
Current Conditions from CS# = VIH to CS# = VIL
April 2012 Final
