
RFD16N05LSM
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2
MAXIMUM RATINGS
Rating Symbol RFD16N05LSM9A Units
Drain to Source Voltage (Note 1) VDS 50 V
Drain to Gate Voltage (RGS 20 kW) (Note 1) VDGR 50 V
Continuous Drain Current ID16 A
Pulsed Drain Current (Note 3) IDM 45 A
Gate to Source Voltage VGS ±10 V
Maximum Power Dissipation PD60 W
Derate Above 25°C 0.48 W/°C
Operating and Storage Temperature TJ, TSTG −55 to 150 °C
Maximum Temperature for Soldering
Leads at 0.063 in (1.6 mm) from Case for 10 s TL300 °C
Package Body for 10 s, See Techbrief 334 Tpkg 260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. TJ = 25°C to 125°C.
ELECTRICAL SPECIFICATIONS (TC = 25°C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Drain to Source Breakdown Voltage BVDSS ID = 250 mA, VGS = 0 V, Figure 10 50 - - V
Gate to Threshold Voltage VGS(TH) VGS = VDS, ID = 250 mA, Figure 9 1−2 V
Zero Gate Voltage Drain Current IDSS VDS = 40 V, VGS = 0 V − − 1mA
TC = 150°C− − 50 mA
Gate to Source Leakage Current IGSS VGS = ±10 V, VDS = 0 V − − 100 nA
Drain to Source On Resistance (Note 2) rDS(ON) ID = 16 A, VGS = 5 V − − 0.047 W
ID = 16 A, VGS = 4 V − − 0.056 W
Turn−On Time t(ON) VDD = 25 V, ID = 8 A, VGS = 5 V,
RGS = 12.5 W
Figures 15, 16
− − 60 ns
Turn−On Delay Time td(ON) −14 −ns
Rise Time tr−30 −ns
Turn−Off Delay Time td(OFF) −42 −ns
Fall Time tf−14 −ns
Turn−Off Time t(OFF) − − − ns
Total Gate Charge Qg(TOT) VGS = 0 V to 10 V VDD = 40 V,
ID = 16 A,
RL = 2.5 Ω
Figures 17, 18
− − 80 nC
Gate Charge at 5 V Qg(5) VGS = 0 V to 5 V − − 45 nC
Threshold Gate Charge Qg(TH) VGS = 0 V to 1 V − − 3 nC
Thermal Resistance Junction to Case RqJC − − 2.083 °C/W
Thermal Resistance Junction to Ambient RqJA − − 100 °C/W
SOURCE TO DRAIN DIODE SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Source to Drain Diode Voltage VSD ISD = 16 A - - 1.5 V
Diode Reverse Recovery Time trr ISD = 16 A, dISD/dt = 100 A/ms- - 125 ns
2. Pulse Test: Pulse Width ≤300 ms, Duty Cycle ≤2%.
3. Repetitive Rating: Pulse Width limited by max junction temperature.