3-17
Product Description
Ordering In formation
Typical Applications
Features
Functional Block Diagram
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Optimum Technology Matching® Applied
Si BJT GaAs MESFETGaAs HBT
Si Bi-CMOS SiGe HBT Si CMOS
InGaP/HBT GaN HEMT SiGe Bi-CMOS
1
4
5
8
6
7
2
3
16
13
12
9
11
10
15
14
RF OUT
NC
RF IN
NC
NC
GND
GND
GND
GND
GND
GND
GND
GND
NC
NC
NC
RF2317
LINEAR CATV AMPLIFIER
• CATV Distribution Amplifiers
• Cable Modems
• Broadband Gain Blocks
• Laser Diode Driver
• Return Channel Amplifier
• Base Stations
The RF2317 is a general pur pose, low-cost high-linear ity
RF amplifier IC. The device is manufactured on an
advanced Gallium Arsenide Heterojunction Bipolar Tran-
sistor (HBT) process, and has been designed for use as
an easily cascadable 75Ω gain block. The gain flatness of
better than ±0.5dB from 50MHz to 1000MHz, and the
high linearity, make this part ideal for cable TV applica-
tions. Other applications include IF and RF amplification
in wireless voice and data communication produ cts oper-
ating in frequency bands up to 3GHz. The device is self-
contained with 75Ω input and output impedances and
requires only two external DC biasing elements to oper-
ate as specified.
• DC to 3.0GHz Operation
• Internally Matched Input and Output
• 15dB Small Signal Gain
• 4.9dB Noise Figure
• +47dBm Output IP3
• Single 9V to 12V Power Supply
RF2317 Linear CATV Amplifier
RF2317 PCBA Fully Assembled Evaluation Board - 50Ω
RF2317 PCBA Fully Assembled Evaluation Board - 75Ω
0
Rev A18 030416
0.068
0.064
0.020
0.014
0.034 REF
0.068
0.053
0.009
0.007
0.034
0.016
8° MAX
0° MIN
0.244
0.229
0.393
0.386
0.157
0.150
0.020
REF
0.008
0.004
-A-
Package Style: CJ2BAT0
!
3-18
RF2317
Rev A18 030416
Absolute Maximum Ratings
Parameter Rating Unit
Device Current 250 mA
Input RF Power +18 dBm
Output Load VSWR 20:1
Ambient Operating Temperature -40 to +85 °C
Storage Temperature -40 to +150 °C
Parameter Specification Unit Condition
Min. Typ. Max.
Overall (50Ω)T=+25°C, ICC=180mA, RC=10.2Ω,
50Ω System
Frequency Range DC 3000 MHz 3dB Bandwidth
Gain 13.5 14.3 15.0 dB
Noise Figure 4.9 dB From 100MHz to 1000MHz
Input VSWR 1.7:1 Appropriate values for the DC blocking
capacitors and bias inductor are required to
maintain this VSWR at the intended operat-
ing frequency range.
Output VSWR 2.3:1 Appropriate values for the DC blocking
capacitors and bias inductor are required to
maintain this VSWR at the intended operat-
ing frequency range.
Output IP3 +47 dBm At 100MHz
+37 +42 dBm At 500MHz
+37 dBm At 900MHz
Output IP2 +55 dBm F1=400MHz, F2=500MHz, FOUT=100MHz
Output P1dB +25.5 dBm At 100MHz
+24 dBm At 500MHz
+22 dBm At 900MHz
Reverse Isolation 19.5 dB
Thermal
ThetaJC 55 °C/W ICC=150mA, PDISS =1.2W, TAMB=85°C
Maximum Junction Temperature 150 °C
Mean Time To Failures 3100 years TAMB=+85°C
ThetaJC 58 °C/W ICC=180mA, PDISS =1.5W, TAMB=85°C
Maximum Junction Temperature 175 °C
Mean Time To Failures 380 years TAMB=+85°C
Power Supply (50Ω)
Device Voltage 8.5 V On pin 13, ICC=150mA
9.3 V On pin 13, ICC=180mA
Operating Current Range 100 180 200 mA Actual current determined by VCC and RC
Caution! ESD sensitive device .
RF Micro Device s believ es the furnished information is correct and accurate
at the time of this printing. However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).
3-19
RF2317
Rev A18 030416
Parameter Specification Unit Condition
Min. Typ. Max.
Overall (75Ω)T=25°C, ICC=180mA, RC=14.3Ω,
75Ω System
Frequency Range DC 3000 MHz 3dB Bandwidth
Gain 15.0 dB
Noise Figure 4.8 dB From 100MHz to 1000MHz
Input VSWR 1.3:1 Appropriate values for the DC blocking
capacitors and bias inductor are required to
maintain this VSWR at the intended operat-
ing frequency range.
Output VSWR 1.8:1 Appropriate values for the DC blocking
capacitors and bias inductor are required to
maintain this VSWR at the intended operat-
ing frequency range.
Output IP3+49 dBm At 100MHz
+37 +43 dBm At 500MHz
+38 dBm At 900MHz
Output IP2+58 dBm F1=400MHz, F2=500MHz, FOUT=100MHz
Output P1dB +22 dBm At 100MHz
+22 dBm At 500MHz
+21 dBm At 900MHz
Reverse Isolation 19 dB
133 Channels 10dBmV per chan nel, f lat , at the inp ut of the
amplifier; ICC=150mA, VCC=10.4V
XMOD <-75 dBc At 55.25MHz
<-75 dBc At 331.25MHz
<-75 dBc At 547.25MHz
<-75 dBc At 853.25MHz
CTB -85 dB c At 55.25MHz
-85 dBc At 331.25MHz
-84 dBc At 547.25MHz
-83 dBc At 853.25MHz
CSO+1.25MHz -90 dB c At 55.25MHz
-72 dBc At 331.25MHz
-69 dBc At 853.25MHz
-64 dBc At 547.25MHz
CSO-1.25MHz -63 dB c At 55.25MHz
-65 dBc At 331.25MHz
-70 dBc At 547.25MHz
-90 dBc At 853.25MHz
3-20
RF2317
Rev A18 030416
Parameter Specification Unit Condition
Min. Typ. Max.
133 Channels 10dBmV per chan nel , fla t, a t the in put of the
amplifier; ICC=180mA, VCC=11.4V
XMOD <-75 dBc At 55.25MHz
<-75 dBc At 331.25MHz
<-75 dBc At 547.25MHz
<-75 dBc At 853.25MHz
CTB -89 dBc At 55.25MHz
-86 dBc At 331.25MHz
-86 dBc At 547.25MHz
-84 dBc At 853.25MHz
CSO+1.25MHz -89 dBc At 55.25MHz
-74 dBc At 331.25MHz
-69 dBc At 853.25MHz
-62 dBc At 547.25MHz
CSO-1.25MHz -63 dBc At 55.25MHz
-65 dBc At 331.25MHz
-71 dBc At 547.25MHz
-91 dBc At 853.25MHz
Power Supply (75Ω)
Device Voltage 8.3 V On pin 13, ICC=150mA
8.9 V On pin 13, ICC=180mA
Operating Current Range 100 180 200 mA Actual current determined by VCC and RC
3-21
RF2317
Rev A18 030416
Pin Function Description Interface Schematic
1NC
This pin is internally not connected.
2GND
Ground connection. Keep traces physically short and connect immedi-
ately to ground plane for best performance. Each ground pin should
have a via to the ground plane.
3GND
Same as pin 2.
4RF IN
RF input pin. This pin is NOT internally DC blocked. A DC blocking
capacitor, suitable fo r the frequenc y of operation, should be used in
most applications. DC coupling of the input is not allowed, because this
will override the internal feedback loop and cause temperature instabil-
ity.
5NC
This pin is internally not connected.
6GND
Same as pin 2.
7GND
Same as pin 2.
8NC
This pin is internally not connected.
9NC
This pin is internally not connected.
10 GND Same as pin 2.
11 GND Same as pin 2.
12 NC This pin is internally not connected.
13 RF OUT RF output and bias pin. Because DC is present on this pin, a DC block-
ing capacitor , suitable for the frequency of operation, should be used in
most applications. For biasing, an RF choke in series with a resistor is
needed. The DC voltage on this pin is typically 8.3V with a current of
150mA (for 75Ω board). See device v oltage versus de vice current plot.
In lower power applications the value of RC can be increased to lower
the current and VD on this pin.
14 GND Same as pin 2.
15 GND Same as pin 2.
16 NC This pin is internally not connected.
RF OUT
RF IN
3-22
RF2317
Rev A18 030416
Application Schematic
5MHz to 50MHz Reverse Path
Evaluation Board Schematic - 50Ω
(Download Bill of Materials from www.rfmd.com.)
RF OUT
3.9 µH
11 Ω10 nF
VCC
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
18 nF
RF IN 18 nF
NOTES:
Gain Flatness <0.5 dB
Input and Output Return Loss >20 dB in 75 Ω system
C1
1 nF
J1
RF IN C2
1 nF
J2
RF OUT
L1
3.3 µH
R1
51 ΩC3
220 pF
R2
51 ΩR3
51 ΩR4
51 Ω
VCC
2317400 Rev -
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
C4
100 nF C5
1 µF
R5
51 Ω
RC = 10.2 Ω
50 Ω µstrip 50 Ω µstrip
GND
NC
P1-1 VCC
P1
1
2
3
3-23
RF2317
Rev A18 030416
Evaluation Board Schematic - 75Ω
C1
1 nF
J1
RF IN C2
1 nF
J2
RF OUT
L1
1000 nH
R4
56 Ω
C3
0.1 uF
R1
56 ΩR2
56 ΩR3
56 Ω
2317401 Rev -
75 Ω µstrip 75 Ω µstrip
GND
NC
P1-1 VCC
P1
1
2
3
VCC
1
3
2
4
6
5
8
7
16
14
15
13
11
12
9
10
RC = 14.3 Ω
3-24
RF2317
Rev A18 030416
Evalua tion Board Layout - 50Ω
2.0” x 2.0”
Board Thickness 0.031”, Board Material FR-4
Evalua tion Board Layout - 75Ω
1.40” x 1.40”
Board Thickness 0.062”, Board Material FR-4
3-25
RF2317
Rev A18 030416
0
1.0 1.0-1.0
10.0
10.0
-10.0
5.0
5.0
-5.0
2.0
2.0
-2.0
3.0
3.0
-3.0
4.0
4.0
-4.0
0.2
0.2
-0.2
0.4
0.4
-0.4
0.6
0.6
-0.6
0.8
0.8
-0.8
75 Ohms ICC 150mA Temp 25C
Swp Max
2GHz
Swp Min
0.05GHz
75Ω, ICC = 150mA, Temp = +25°C
S[1,1]
S[2,2]
0
1.0 1.0-1.0
10.0
10.0
-10.0
5.0
5.0
-5.0
2.0
2.0
-2.0
3.0
3.0
-3.0
4.0
4.0
-4.0
0.2
0.2
-0.2
0.4
0.4
-0.4
0.6
0.6
-0.6
0.8
0.8
-0.8
75 Ohms ICC 180mA Temp 25CSwp Max
2GHz
Swp Min
0.05GHz
75Ω, ICC = 180mA, Temp = +25°C
S[1,1]
S[2,2]
3-26
RF2317
Rev A18 030416
Device Voltage versus Current
75 Ω
5.0
6.0
7.0
8.0
9.0
10.0
0.0 25.0 50.0 75.0 100.0 125.0 150.0 175.0 200.0
Cur rent ( m A )
Device Voltage (V)
CSO (L) versus Channel Frequency Across Tempe rature
(133 Channels, ICC = 150 m A)
30.00
40.00
50.00
60.00
70.00
80.00
90.00
100.00
55.25 155.25 255.25 355.25 455.25 555.25 655.25 755.25 855.25
Channel Frequency (M Hz)
CSO (dBc)
-40°C
+25°C
+85°C
CSO (U) versus Channel Frequency Across Temperature
(1 33 Ch annels, I CC = 150 m A )
30.00
40.00
50.00
60.00
70.00
80.00
90.00
100.00
55.3 155.3 255.3 355.3 455.3 555.3 655.3 755.3 855.3
Channel Frequency (M Hz)
CSO (dBc)
-40°C
+25°C
+85°C
CTB versus Channel Frequency Across Temperature
(133 Channels, ICC = 150 m A)
81.00
82.00
83.00
84.00
85.00
86.00
87.00
88.00
89.00
55.25 155.25 255.25 355.25 455.25 555.25 655.25 755.25 855.25
Channel Frequency (M Hz)
CTB (dBc)
-40°C
+25°C
+85°C
Noise Figure versus Frequency Over Temperature
75 Ω, ICC = 180 m A
0.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
100.0 200.0 300.0 400.0 500.0 600.0 700.0 800.0 900.0 1000.0
Fre quency (MHz)
Noise Figure (dB)
-40°C
+25°C
+85°C
Gain versus Frequency
75Ω, ICC=180mA
10.0
11.0
12.0
13.0
14.0
15.0
16.0
17.0
100.0 200.0 300.0 400.0 500.0 600.0 700.0 800.0 900.0 1000.0
Fre quency (MHz)
Gain (dB)
-40°C
+25°C
+85°C
3-27
RF2317
Rev A18 030416
CSO (L) versus Channel Frequency Across Tempe rature
(133 Channels, ICC = 180 m A)
30.00
40.00
50.00
60.00
70.00
80.00
90.00
100.00
55.25 155.25 255.25 355.25 455.25 555.25 655.25 755.25 855.25
Channel Frequency (M Hz)
CSO (dBc)
-40°C
+25°C
+85°C
CSO (U) versus Channel Frequency Across Temperature
(1 33 Ch annels, I CC = 180 m A )
0.00
10.00
20.00
30.00
40.00
50.00
60.00
70.00
80.00
90.00
100.00
55.25 155.25 255.25 355.25 455.25 555.25 655.25 755.25 855.25
Channel Frequency (M H z)
CSO (dBc)
-40°C
+25°C
+85°C
CTB versus Channel Frequency Across Temperature
(133 Channels, ICC = 180 m A)
81.00
82.00
83.00
84.00
85.00
86.00
87.00
88.00
89.00
90.00
91.00
55.25 155.25 255.25 355.25 455.25 555.25 655.25 755.25 855.25
Channel Frequency (M Hz)
CTB (dBc)
-40°C
+25°C
+85°C
3-28
RF2317
Rev A18 030416
