TIL117S-M - Fairchild Semiconductor Corporation

TIL111M, TIL117M, MOC8100M — General Purpose 6-Pin Phototransistor Optocouplers

TIL111M, TIL117M, MOC8100M Rev. 1.0.3

May 2013

TIL111M, TIL117M, MOC8100M

General Purpose 6-Pin Phototransistor Optocouplers

Features

■

UL Recognized (File # E90700)

■

VDE Recognized (File #102497 for white package)

– Add Option V (e.g., TIL111VM)

Applications

■

Power Supply Regulators

■

Digital Logic Inputs

■

Microprocessor Inputs

■

Appliance Sensor Systems

■

Industrial Controls

General Description

The MOC8100M, TIL111M, and TIL117M optocouplers

consist of a gallium arsenide infrared emitting diode

driving a silicon phototransistor in a 6-pin dual in-line

package.

Schematic Package Outlines

CATHODE 2

NC 3

ANODE 1

5 COLLECTOR

6 BASE

4 EMITTER

Figure 1. Schematic

Figure 2. Package Outlines

TIL111M, TIL117M, MOC8100M Rev. 1.0.3 2

TIL111M, TIL117M, MOC8100M — General Purpose 6-Pin Phototransistor Optocouplers

Safety and Insulation Ratings

As per IEC60747-5-2. This optocoupler is suitable for “safe electrical insulation” only within the safety limit data.

Compliance with the safety ratings shall be ensured by means of protective circuits.

Symbol Parameter Min. Typ. Max. Unit

Installation Classiﬁcations per DIN VDE 0110/1.89 Table 1

For Rated Mains Voltage < 150 V

RMS

I–IV

For Rated Mains Voltage < 300 V

RMS

I–IV

Climatic Classiﬁcation 55/100/21

Pollution Degree (DIN VDE 0110/1.89) 2

CTI Comparative Tracking Index 175

V

PR

Input to Output Test Voltage, Method b,

V

IORM

x 1.875 = V

PR

, 100% Production Test with

t

m

= 1 s, Partial Discharge < 5 pC

1594

Input to Output Test Voltage, Method a,

V

IORM

x 1.5 = V

PR

, Type and Sample Test with

t

m

= 60 s, Partial Discharge < 5 pC

1275

V

IORM

Maximum Working Insulation Voltage 850 V

peak

V

IOTM

Highest Allowable Over Voltage 6000 V

peak

External Creepage 7 mm

External Clearance 7 mm

Insulation Thickness 0.5 mm

R

IO

Insulation Resistance at T

S

, V

IO

= 500 V 10

9

Ω

TIL111M, TIL117M, MOC8100M Rev. 1.0.3 3

TIL111M, TIL117M, MOC8100M — General Purpose 6-Pin Phototransistor Optocouplers

Absolute Maximum Ratings

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be

operable above the recommended operating conditions and stressing the parts to these levels is not recommended.

In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.

The absolute maximum ratings are stress ratings only.

Symbol Parameter Device Value Units

Total Device

T

STG

Storage Temperature All -40 to +150 °C

T

OPR

Operating Temperature All -40 to +100 °C

T

SOL

Lead Solder Temperature All 260 for 10 sec °C

P

D

Total Device Power Dissipation @ T

A

= 25°C

Derate Above 25°C

All 250 mW

2.94 mW/°C

Emitter

I

F

DC/Average Forward Input Current All 60 mA

V

R

Reverse Input Voltage TIL111M 3 V

MOC8100M, TIL117M 6

I

F

(pk) Forward Current – Peak (300 µs, 2% Duty Cycle) All 3 A

P

D

LED Power Dissipation @ T

A

= 25°C

Derate Above 25°C

All 120 mW

1.41 mW/°C

Detector

V

CEO

Collector-Emitter Voltage All 30 V

V

CBO

Collector-Base Voltage All 70 V

V

ECO

Emitter-Collector Voltage TIL111M, TIL117M 7 V

V

EBO

Emitter-Base Voltage All 7

P

D

Detector Power Dissipation @ T

A

= 25°C

Derate Above 25°C

All 150 mW

1.76 mW/°C

TIL111M, TIL117M, MOC8100M Rev. 1.0.3 4

TIL111M, TIL117M, MOC8100M — General Purpose 6-Pin Phototransistor Optocouplers

Electrical Characteristics

T

A

= 25°C unless otherwise specified.

Individual Component Characteristics

*All Typical values at T

A

= 25°C

Symbol Parameter Test Conditions Device Min. Typ.* Max. Unit

Emitter

V

F

Input Forward

Voltage

I

F

= 16 mA T

A

= 25°C TIL111M 1.2 1.4 V

I

F

= 10 mA for

MOC8100M,

I

F

= 16 mA for

TIL117M

T

A

= 0°C to 70°C MOC8100M,

TIL117M

1.2 1.4

T

A

= -55°C 1.32

T

A

= +100°C 1.10

I

R

Reverse Leakage

Current

V

R

= 3.0 V TIL111M, TIL117M 0.001 10 µA

V

R

= 6.0 V MOC8100M 0.001 10 µA

Detector

BV

CEO

Collector-Emitter

Breakdown Voltage

I

C

= 1.0 mA, I

F

= 0 All 30 100 V

BV

CBO

Collector-Base

Breakdown Voltage

I

C

= 10 µA, I

F

= 0 All 70 120 V

BV

EBO

Emitter-Base

Breakdown Voltage

I

E

= 10 µA, I

F

= 0 All 7 10 V

BV

ECO

Emitter-Collector

Breakdown Voltage

I

F

= 100 µA, I

F

= 0 TIL111M, TIL117M 7 10 V

I

CEO

Collector-Emitter

Dark Current

V

CE

= 10 V, I

F

= 0 TIL111M, TIL117M 1 50 nA

V

CE

= 5 V, T

A

= 25°C MOC8100M 0.5 25 nA

V

CE

= 30 V, I

F

= 0, T

A

= 70°C TIL117M,

MOC8100M

0.2 50 µA

I

CBO

Collector-Base Dark

Current

V

CB

= 10 V TIL111M, TIL117M 20 nA

I

CBO

V

CB

= 5 V MOC8100M 10 nA

C

CE

Capacitance V

CE

= 0 V, f = 1 MHz All 8 pF

TIL111M, TIL117M, MOC8100M Rev. 1.0.3 5

TIL111M, TIL117M, MOC8100M — General Purpose 6-Pin Phototransistor Optocouplers

Electrical Characteristics

(Continued)

T

A

= 25°C unless otherwise specified.

Transfer Characteristics

Isolation Characteristics

*All Typical values at T

A

= 25°C.

Symbol Parameter Test Conditions Device Min Typ* Max Unit

DC Characteristics

CTR

CE

Current Transfer Ratio,

Collector to Emitter

I

F

= 10 mA, V

CE

= 10 V TIL117M 50 %

I

F

= 1 mA, V

CE

= 5 V MOC8100M 50 %

I

F

= 1 mA, V

CE

= 5 V,

T

A

= 0°C to +70°C

30

I

C(ON)

On-State Collector Current

(Phototransistor Operation)

I

F

= 16 mA, V

CE

= 0.4 V TIL111M 2 mA

On-State Collector Current

(Photodiode Operation)

I

F

= 16 mA, V

CB

= 0.4 V 7 µA

V

CE (SAT)

Collector-Emitter Saturation

Voltage

I

C

= 500 µA, I

F

= 10 mA TIL117M 0.4 V

I

C

= 2 mA, I

F

= 16 mA TIL111M 0.4

I

C

= 100 µA, I

F

= 1 mA MOC8100M 0.5

AC Characteristics

W

ON

Turn-On Time I

C

= 2 mA, V

CC

= 10 V,

R

L

= 100

Ω

(Fig. 13)

MOC8100M 20 µs

TIL117M 10

W

OFF

Turn-Off Time MOC8100M 20 µs

TIL117M 10

t

r

Rise Time MOC8100M

TIL117M

2µs

t

fFall Time 2

trRise Time

(Phototransistor Operation)

IC(ON) = 2 mA, VCC = 10 V,

RL = 100 Ω (Fig. 13)

TIL111M 10 µs

tfFall Time

(Phototransistor Operation)

Symbol Characteristic Test Conditions Min. Typ.* Max. Units

VISO Input-Output Isolation Voltage f = 60 Hz, t = 1 s 7500 VAC(PK)

RISO Isolation Resistance VI-O = 500 VDC 1011 Ω

CISO Isolation Capacitance VI-O = 0, f = 1 MHz 0.2 pF

TIL111M, TIL117M, MOC8100M Rev. 1.0.3 6

TIL111M, TIL117M, MOC8100M — General Purpose 6-Pin Phototransistor Optocouplers

Typical Performance Characteristics

Figure 4. Normalized CTR vs. Forward Current

I

F

– FORWARD CURRENT (mA)

0 2 4 6 8 101214161820

NORMALIZED CTR

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

VCE = 5.0 V

TA = 25˚C

Normalized to

IF = 10 mA

Figure 5. Normalized CTR vs. Ambient Temperature

T

A

– AMBIENT TEMPERATURE (˚C)

-60 -40 -20 020 40 60 80 100

NORMALIZED CTR

0.2

0.4

0.6

0.8

1.0

1.2

1.4

IF = 5 mA

IF = 10 mA

IF = 20 mA

Normalized to:

IF = 10 mA

TA = 25˚C

Figure 6. CTR vs. RBE (Unsaturated)

R

BE

– BASE RESISTANCE (kΩ)

NORMALIZED CTR ( CTR

RBE

/ CTR

RBE(OPEN)

)

10 100 1000

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

VCE = 5.0 V

IF = 20 mA

IF = 10 mA IF = 5 mA

Figure 7. CTR vs. RBE (Saturated)

R

BE

– BASE RESISTANCE (kΩ)

NORMALIZED CTR ( CTR

RBE

/ CTR

RBE(OPEN)

)

10 100 1000

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

IF = 20 mA

IF = 10 mA

IF = 5 mA

VCE = 0.3 V

I

F

– LED FORWARD CURRENT (mA)

V

F

– FORWARD VOLTAGE (V)

Figure 3. LED Forward Voltage vs. Forward Current

1 10 100

1.0

1.1

1.2

1.3

1.4

1.5

1.6

1.7

1.8

TA = 25°C

TA = -55°C

TA = 100°C

0.01 0.1 1 10

0.001

0.01

0.1

1

10

100

IF = 5 mA

IF = 20 mA

IF = 10 mA

Figure 8. Collector-Emitter Saturation Voltage vs Collector Current

I

C

- COLLECTOR CURRENT (mA)

V

CE (SAT)

–

COLLECTOR-EMITTER SATURATION VOLTAGE (V)

IF = 2.5 mA

TA = 25

˚C

TIL111M, TIL117M, MOC8100M Rev. 1.0.3 7

TIL111M, TIL117M, MOC8100M — General Purpose 6-Pin Phototransistor Optocouplers

Typical Performance Characteristics (Continued)

10 100 1000 10000 100000

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.1

1.2

1.3

1.4

VCC = 10 V

IC = 2 mA

RL = 100 Ω

NORMALIZED toff – (toff(R

BE

) / toff(open))

RBE – BASE RESISTANCE (kΩ)

Figure 11. Normalized toff vs. RBE

Figure 13. Switching Time Test Circuit and Waveforms

Figure 12. Dark Current vs. Ambient Temperature

SWITCHING SPEED (μs)

Figure 9. Switching Speed vs. Load Resistor

R – LOAD RESISTOR (kΩ)

0.1 1 10 100

0.1

1

10

100

1000

Toff

Ton

Tf

IF = 10 mA

VCC = 10 V

TA = 25˚C

Tr

RBE – BASE RESISTANCE (kΩ)

NORMALIZED ton – (ton(R

BE

) / ton(open))

Figure 10. Normalized ton vs. RBE

10 100 1000 10000 100000

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

VCC = 10 V

IC = 2 mA

RL = 100 Ω

TA – AMBIENT TEMPERATURE

(°C)

0 20 40 60 80 100

I

CEO

– COLLECTOR -EMITTER DARK CURRENT (nA)

0.001

0.01

0.1

1

10

100

1000

VCE = 10 V

TA = 25°

C

OUTPUT PULSE

INPUT PULSE

TEST CIRCUIT WAVEFORMS

trtf

INPUT

IF RL

RBE

VCC = 10 V

OUTPUT

ton

10%

90%

toff

IC

Adjust IF to produce IC = 2 mA

TIL111M, TIL117M, MOC8100M Rev. 1.0.3 8

TIL111M, TIL117M, MOC8100M — General Purpose 6-Pin Phototransistor Optocouplers

Reflow Profile

300

280

260

240

220

200

180

160

140

120

100

80

60

40

20

0

°C

Time (s)

0 60 180120 270

260°C

>245°C = 42 s

Time above

183°C = 90 s

360

1.822°C/s Ramp up rate

33 s

Figure 14. Reflow Profile

TIL111M, TIL117M, MOC8100M Rev. 1.0.3 9

TIL111M, TIL117M, MOC8100M — General Purpose 6-Pin Phototransistor Optocouplers

Ordering Information

Marking Information

Option

Order Entry Identiﬁer

(Example) Description

No option TIL111M Standard Through-Hole Device

S TIL111SM Surface Mount Lead Bend

SR2 TIL111SR2M Surface Mount; Tape and Reel

T TIL111TM 0.4" Lead Spacing

V TIL111VM VDE 0884

TV TIL111TVM VDE 0884, 0.4" Lead Spacing

SV TIL111SVM VDE 0884, Surface Mount

SR2V TIL111SR2VM VDE 0884, Surface Mount, Tape and Reel

TIL111

1

2

6

43 5

*Note – Parts that do not have the ‘V’ option (see definition 3 above) that are

marked with date code ‘325’ or earlier are marked in portrait format.

Deﬁnitions

1 Fairchild logo

2 Device number

3VDE mark (Note: Only appears on parts ordered with VDE

option – See order entry table)

4 One-digit year code, e.g., ‘3’

5 Two-digit work week ranging from ‘01’ to ‘53’

6 Assembly package code

V X YY

Q

TIL111M, TIL117M, MOC8100M Rev. 1.0.3 10

TIL111M, TIL117M, MOC8100M — General Purpose 6-Pin Phototransistor Optocouplers

Package Dimensions

Figure 15. 6-Pin DIP Through Hole

Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner

without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or

obtain the most recent revision. Package speciﬁcations do not expand the terms of Fairchild’s worldwide terms and conditions,

speciﬁcally the warranty therein, which covers Fairchild products.

Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:

http://www.fairchildsemi.com/packaging/.

TIL111M, TIL117M, MOC8100M Rev. 1.0.3 11

TIL111M, TIL117M, MOC8100M — General Purpose 6-Pin Phototransistor Optocouplers

Package Dimensions (Continued)

Figure 16. 6-Pin DIP Surface Mount

Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner

without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or

obtain the most recent revision. Package speciﬁcations do not expand the terms of Fairchild’s worldwide terms and conditions,

speciﬁcally the warranty therein, which covers Fairchild products.

Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:

http://www.fairchildsemi.com/packaging/

TIL111M, TIL117M, MOC8100M Rev. 1.0.3 12

TIL111M, TIL117M, MOC8100M — General Purpose 6-Pin Phototransistor Optocouplers

Package Dimensions (Continued)

Figure 17. 6-Pin DIP 0.4” Lead Spacing

Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner

without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or

obtain the most recent revision. Package speciﬁcations do not expand the terms of Fairchild’s worldwide terms and conditions,

speciﬁcally the warranty therein, which covers Fairchild products.

Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:

http://www.fairchildsemi.com/packaging/

TIL111M, TIL117M, MOC8100M Rev. 1.0.3 13

TIL111M, TIL117M, MOC8100M — General Purpose 6-Pin Phototransistor Optocouplers

Carrier Tape Specification

Figure 18. Carrier Tape Speciﬁcation

4.0 ± 0.1

Ø1.5 MIN

User Direction of Feed

2.0 ± 0.05

1.75 ± 0.10

11.5 ± 1.0

24.0 ± 0.3

12.0 ± 0.1

0.30 ± 0.05

21.0 ± 0.1

4.5 ± 0.20

0.1 MAX 10.1 ± 0.20

9.1 ± 0.20

Ø1.5 ± 0.1/-0

TIL111M, TIL117M, MOC8100M Rev. 1.0.3 14

TIL111M, TIL117M, MOC8100M — General Purpose 6-Pin Phototransistor Optocouplers