VS-SD703C..L Series
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Fast Recovery Diodes
(Hockey PUK Version), 700 A, 790 A
FEATURES
• High power fast recovery diode series
• 2.0 μs to 3.0 μs recovery time
• High voltage ratings up to 2500 V
• High current capability
• Optimized turn-on and turn-off characteristics
• Low forward recovery
• Fast and soft reverse recovery
• Press PUK encapsulation
• Case style conform to JEDEC® B-PUK (DO-200AB)
• Maximum junction temperature 150 °C
• Designed and qualified for industrial level
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
• Snubber diode for GTO
• High voltage freewheeling diode
• Fast recovery rectifier applications
ELECTRICAL SPECIFICATIONS
PRIMARY CHARACTERISTICS
IF(AV) 700 A, 790 A
Package B-PUK (DO-200AB)
Circuit configuration Single
B-PUK (DO-200AB)
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER TEST CONDITIONS SD703C..L UNITS
S20 S30
IF(AV)
700 790 A
Ths 55 55 °C
IF(RMS) 1320 1470
A
IFSM
50 Hz 9300 9600
60 Hz 9730 10 050
VRRM Range 1200 to 2500 1200 to 2500 V
trr
2.0 3.0 μs
TJ25 25 °C
TJ-40 to +150 -40 to +150
VOLTAGE RATINGS
TYPE NUMBER VOLTAGE
CODE
VRRM, MAXIMUM REPETITIVE
PEAK REVERSE VOLTAGE
V
VRSM, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
IRRM MAXIMUM
AT TJ = TJ MAXIMUM
mA
VS-SD703C..L
12 1200 1300
50
16 1600 1700
20 2000 2100
25 2500 2600
VS-SD703C..L Series
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Note
• The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DC
FORWARD CONDUCTION
PARAMETER SYMBOL TEST CONDITIONS SD703C..L UNITS
s20 s30
Maximum average forward current
at heatsink temperature IF(AV) 180° conduction, half sine wave
Double side (single side) cooled
700 (365) 790 (400) A
55 (85) 55 (85) °C
Maximum RMS forward current IF(RMS) 25 °C heatsink temperature double side cooled 1320 1470
A
Maximum peak, one-cycle forward,
non-repetitive surge current IFSM
t = 10 ms No voltage
reapplied
Sinusoidal half wave,
initial TJ = TJ maximum
9300 9600
t = 8.3 ms 9730 10 050
t = 10 ms 100 % VRRM
reapplied
7820 8070
t = 8.3 ms 8190 8450
Maximum I2t for fusing I2t
t = 10 ms No voltage
reapplied
432 460
kA2s
t = 8.3 ms 395 420
t = 10 ms 100 % VRRM
reapplied
306 326
t = 8.3 ms 279 297
Maximum I2t for fusing I2t t = 0.1 to 10 ms, no voltage reapplied 4320 4600 kA2s
Low level value of threshold voltage VF(TO)1 (16.7 % x x IF(AV) < I < x IF(AV)), TJ = TJ maximum 1.00 0.95 V
High level value of threshold voltage VF(TO)2 (I > x IF(AV)), TJ = TJ maximum 1.11 1.05
Low level value of forward
slope resistance rf1 (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum 0.80 0.60
mW
High level value of forward
slope resistance rf2 (I > x IT(AV)), TJ = TJ maximum 0.76 0.56
Maximum forward voltage drop VFM Ipk = 1500 A, TJ = TJ maximum,
tp = 10 ms sinusoidal wave 2.20 1.85 V
RECOVERY CHARACTERISTICS
CODE
MAXIMUM VALUE
AT TJ = 25 °C TEST CONDITIONS TYPICAL VALUES
AT TJ = 150 °C
trr AT 25 % IRRM
(μs)
Ipk
SQUARE
PULSE
(A)
dI/dt
(A/μs)
Vr
(V)
trr AT 25 % IRRM
(μs)
Qrr
(μC)
Irr
(A)
S20 2.0 1000 50 -50 3.5 240 110
S30 3.0 5.0 380 130
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction operating
and storage temperature range TJ, TStg -40 to 150 °C
Maximum thermal resistance,
case junction to heatsink RthJ-hs
DC operation single side cooled 0.092 K/W
DC operation double side cooled 0.046
Mounting force, ± 10 % 9800
(1000)
N
(kg)
Approximate weight 250 g
Case style See dimensions - link at the end of datasheet B-PUK (DO-200AB)
RthJ-hs CONDUCTION
CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION TEST CONDITIONS UNITS
SINGLE SIDE DOUBLE SIDE SINGLE SIDE DOUBLE SIDE
180° 0.011 0.011 0.008 0.008
TJ = TJ maximum K/W
120° 0.013 0.014 0.013 0.013
90° 0.017 0.017 0.018 0.018
60° 0.024 0.025 0.026 0.026
30° 0.043 0.043 0.043 0.044
IFM trr
dir
dt
IRM(REC)
Qrr
t
VS-SD703C..L Series
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Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
Fig. 3 - Current Ratings Characteristics
Fig. 4 - Current Ratings Characteristics
Fig. 5 - Current Ratings Characteristics
Fig. 6 - Current Ratings Characteristics
20
40
60
80
100
120
140
160
0 100200300400500600
30° 60° 90° 120°
180°
Average Forward Current (A)
Maximum Allowable Heatsink Temperature (°C)
Conduction Angle
SD703C..S20L Series
(Single Side Cooled)
R (DC) = 0.092 K/ W
thJ-hs
0
20
40
60
80
100
120
140
160
0 100 200 300 400 500 600 700 800 900
30° 60°
90°
180° DC
120°
Average Forward Current (A)
Maximum Allowable Heatsink Temperature (°C)
Conduction Period
SD703C..S20L Series
(Single Side Cooled)
R (DC) = 0.092 K/ W
thJ-hs
20
40
60
80
100
120
140
160
0 100 200 300 400 500 600
30° 60° 90° 120° 180°
Average Forward Current (A)
Maximum Allowable Heatsink Temperature (°C)
Conduc tion Angle
SD 7 0 3 C . . S3 0 L Se r i e s
(Single Side Cooled)
R (DC) = 0.092 K/ W
thJ-hs
0
20
40
60
80
100
120
140
160
0 200 400 600 800 1000
30° 60° 90°
180° DC
120°
Average Forward Current (A)
Maximum Allowable Heatsink Temperature (°C)
Conduction Period
SD703C..S30L Serie s
(Single Side Cooled)
R (DC) = 0.092 K/W
thJ-hs
0
20
40
60
80
100
120
140
160
0 100 200 300 400 500 600 700 800 900
30° 60° 90° 120° 180°
Average Forward Current (A)
Maximum Allowable Heatsink Temperature (°C)
Conduction Angle
SD 70 3 C . . S2 0 L Se r i e s
(Double Side Cooled)
R (DC) = 0.046 K/W
thJ-hs
0
20
40
60
80
100
120
140
160
0 200 400 600 800 1000 1200 1400
30° 60° 90°
180°
DC
120°
Average Forward Current (A)
Maximum Allowable Heatsink Temperat ure (°C)
Conduction Period
SD703C..S20L Series
(Double Side Cooled)
R (DC) = 0.046 K/ W
thJ-hs
VS-SD703C..L Series
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Fig. 7 - Current Ratings Characteristics
Fig. 8 - Current Ratings Characteristics
Fig. 9 - Forward Power Loss Characteristics
Fig. 10 - Forward Power Loss Characteristics
Fig. 11 - Forward Power Loss Characteristics
Fig. 12 - Forward Power Loss Characteristics
0
20
40
60
80
100
120
140
160
0 200 400 600 800 1000
30° 60° 90°
120° 180°
Average Forward Current (A)
Maximum Allowable Heatsink Temperature (°C)
Conduction Angle
SD703C..S30L Series
(Double Side Cooled)
R (DC) = 0.046 K/W
thJ-hs
0
20
40
60
80
100
120
140
160
0 250 500 750 1000 1250 1500
30° 60° 90°
180°
DC
120°
Average Forward Current (A)
Maximum Allowable Heatsink Temperature (°C)
Conduction Period
SD 7 0 3 C . . S3 0 L Se r i e s
(Double Side Cooled)
R (DC) = 0.046 K/ W
thJ-hs
0
500
1000
1500
2000
2500
0 100 200 300 400 500 600 700 800 900
180°
120°
90°
60°
30°
Average Forward Current (A)
M a x i m u m A v e ra g e Fo rw a rd Po w er Lo ss ( W)
RM S Li m i t
Cond uc tion Angle
SD703C..S20L Serie s
T = 1 5 0 ° C
J
0
500
1000
1500
2000
2500
3000
0 200 400 600 800 1000 1200 1400
DC
180°
120°
90°
60°
30°
Averag e Forw ard Current (A)
RM S Li m it
Maximum Average Forward Power Loss (W)
Conduction Period
SD 7 0 3 C . . S2 0 L Se r i e s
T = 1 5 0 ° C
J
0
500
1000
1500
2000
2500
0 200 400 600 800 1000
180°
120°
90°
60°
30°
Average Forward Current (A)
Maximum Average Forward Power Loss (W)
RM S Li m it
Conduction Angle
SD703C..S30L Serie s
T = 150°C
J
0
500
1000
1500
2000
2500
3000
0 400 800 1200 1600
DC
180°
120°
90°
60°
30°
Average Forw ard Current (A)
RM S Li m it
Maximum Average Forward Power Loss (W)
Conduction Period
SD 7 0 3 C . . S3 0 L Se r i e s
T = 1 5 0 ° C
J
VS-SD703C..L Series
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Fig. 13 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 14 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 15 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 16 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 17 - Forward Voltage Drop Characteristics
Fig. 18 - Forward Voltage Drop Characteristics
2000
3000
4000
5000
6000
7000
8000
9000
110100
Number Of Equa l Amplitude Half Cycle Current Pulses (N)
Peak Half Sine Wave Forward Current (A)
SD703C ..S20L Series
Init ia l T = 150 °C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
J
At Any Rated Load Condition And With
Rated V App lied Follow ing Surg e
RRM
2000
4000
6000
8000
10000
0.01 0.1 1
Pulse Tra in D u ra t io n ( s)
Maximum Non Repetitive Surge Current
Peak Half Sine Wave Forward Current (A)
Initia l T = 150°C
No Voltage Reapplied
Ra t e d V Re a p p l ie d
SD703C..S20L Series
RRM
J
Versus Pulse Train Duration.
2000
3000
4000
5000
6000
7000
8000
9000
110100
Number Of Eq ual Amplitude Half Cyc le Current Pulses (N)
Pe a k Ha l f Sine Wave Forward Curren t (A)
SD 7 0 3 C . . S3 0 L Se r i e s
Init ia l T = 150 °C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
At Any Rat ed Loa d Condition And With
Rated V Applied Following Surge.
RRM
J
2000
3000
4000
5000
6000
7000
8000
9000
10000
0.01 0.1 1
Pulse Train Duration (s)
Maximum Non Repetitive Surge Current
Pe a k Ha lf Sin e Wa v e Fo rw a rd Cu rre n t ( A )
Initia l T = 150°C
No Voltage Reapplied
Rated V Reapplied
J
RRM
Versus Pulse Train Duration.
SD 7 0 3 C . . S3 0 L Se r i e s
100
1000
10000
0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
T = 2 5 ° C
J
Instantaneous Forward Voltage (V)
In st a n t a n e o u s Fo rw a rd C u r r e n t ( A )
T = 150°C
J
SD703C..S20L Se ries
100
1000
10000
0.5 1 1.5 2 2.5 3 3.5 4
T = 2 5 ° C
J
Instantaneous Forward Voltage (V)
Instantaneous Forward Current (A)
SD703C..S30L Serie s
T = 1 5 0 ° C
J
VS-SD703C..L Series
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Fig. 19 - Thermal Impedance ZthJ-hs Characteristic
Fig. 20 - Typical Forward Recovery Characteristics
Fig. 21 - Typical Forward Recovery Characteristics
Fig. 22 - Recovery Time Characteristics
Fig. 23 - Recovery Charge Characteristics
0.001
0.01
0.1
0.001 0.01 0.1 1 10 100
Sq u a r e W a v e Pu l se D u r a t i o n ( s)
thJ-hs
Tra n si e n t Th e r m a l Im p e d a n c e Z ( K/ W)
Steady State Value
R = 0.092 K/ W
(Single Side Cooled)
R = 0.046 K/ W
(Double Side Cooled)
(DC Operation)
thJ-hs
thJ-hs
SD 7 0 3 C . . S2 0 / S3 0 L Se r i e s
0
20
40
60
80
100
0 400 800 1200 1600 2000
T = 2 5 ° C
J
Fo r w a r d Re c o v e ry ( V )
SD 7 0 3 C . . S2 0 L Se r i e s
T = 150°C
J
Rate Of Rise Of Forward Current - di/dt (A/us)
I
V
FP
0
20
40
60
80
100
0 400 800 1200 1600 2000
T = 2 5 ° C
J
Fo r w a r d Re c o v e r y ( V )
T = 150°C
J
SD703C..S30L Series
Rate Of Rise Of Forward Current - di/dt (A/us)
I
V
FP
2
2.5
3
3.5
4
4.5
5
5.5
6
10 100 1000
Rate Of Fall Of Forward Current - di/d t (A/ µs)
Maximum Reverse Recovery Time - Trr (µs)
500 A
SD 7 0 3 C . . S2 0 L Se r i e s
T = 150 °C; V > 100V
J
r
I = 1000 A
Si n e Pu l se
150 A
FM
0
100
200
300
400
500
600
700
800
0 50 100 150 200 250 300
Ra t e Of Fa ll Of Fo rwa rd C urrent - d i/ d t (A/ µs)
500 A
SD 7 0 3 C . . S2 0 L Se r i e s
T = 150 °C; V > 100V
J
r
I = 1000 A
Si n e P u l se
FM
150 A
Ma ximum Reverse Rec ove ry C harge - Qrr (A)
VS-SD703C..L Series
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Fig. 24 - Recovery Current Characteristics
Fig. 25 - Recovery Time Characteristics
Fig. 26 - Recovery Charge Characteristics
Fig. 27 - Recovery Current Characteristics
Fig. 28 - Maximum Total Energy Loss
Per Pulse Characteristics
Fig. 29 - Frequency Characteristics
0
50
100
150
200
250
300
350
400
450
050100150200250300
Maximum Reverse Rec overy Current - Irr (A)
500 A
Ra t e O f Fa l l O f Fo rw a r d C u r re n t - d i / d t ( A / µ s)
SD703C..S20L Serie s
T = 150 °C; V > 100V
J
r
I = 1000 A
Si n e Pu l se
150 A
FM
2
2.5
3
3.5
4
4.5
5
5.5
6
6.5
7
10 100 1000
Rate Of Fall Of Forward Current - d i/ d t (A/ µs)
Maximum Reverse Recovery Time - Trr (µs)
500 A
SD703C..S30L Series
T = 150 °C; V > 100V
J
r
I = 1000 A
Si n e Pu l se
FM
150 A
0
100
200
300
400
500
600
700
800
900
1000
1100
0 50 100 150 200 250 300
Rate Of Fall Of Forward Current - di/dt (A/µs)
500 A
SD 7 0 3 C . . S3 0 L Se r i e s
T = 150 °C; V > 100V
J
r
I = 1000 A
Si n e Pu l s e
FM
150 A
Maximum Reverse Recovery Charge - Qrr (µC)
0
50
100
150
200
250
300
350
400
450
500
550
050100150200250300
Maximum Reverse Recovery Current - Irr (A)
500 A
Rate Of Fall Of Forward Current - di/dt (A/µs)
SD 7 0 3 C . . S3 0 L Se r i e s
T = 150 °C; V > 100V
J
r
I = 1000 A
Si n e Pu l se
150 A
FM
1E2
1E3
1E4
1E1 1E2 1E3 1E4
12
0.1
Pulse Ba sew id t h (µ s)
Peak Forward Current (A)
10 joules per pulse
6
4
d v/ d t = 1000V/ µs
Si n u so i d a l Pu l se
0.6
0.4
0.08
SD703C..S20L Series
T = 150°C, V = 800V
J
RRM
tp
0.2
1E2
1E3
1E4
1E1 1E2 1E3 1E4
Pulse Ba se w id t h ( µ s)
50 Hz
200
10000
100
4000
dv/dt = 1000V/us
20000
400
15000
1000
6000
Peak Forward Current (A)
Si n u so i d a l Pu l se
SD703C..S20L Series
T = 55°C, V = 800V
C
RRM
2000
tp
3000
600
VS-SD703C..L Series
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Fig. 30 - Maximum Total Energy Loss
Per Pulse Characteristics
Fig. 31 - Frequency Characteristics
Fig. 32 - Maximum Total Energy Loss
Per Pulse Characteristics
Fig. 33 - Frequency Characteristics
Fig. 34 - Maximum Total Energy Loss
Per Pulse Characteristics
Fig. 35 - Frequency Characteristics
1E2
1E3
1E4
1E1 1E2 1E3 1E4
1
2
Pu lse Ba se w id t h ( µs)
4
10 joules per pulse
6
Trapezoidal Pulse
Peak Forward Current (A)
SD703C..S20L Series
T = 150°C, V = 800V
dv/dt = 1000V/µs
d i/ d t = 300A/ µs
J
RRM
0.6
0.4
tp
0.8
1E2
1E3
1E4
1E1 1E2 1E3 1E4
Pulse Ba se w i d t h (µ s)
Trapezoidal Pulse
50 Hz
100
200
400
1000
2000
4000
3000
600
6000
10000
15000
Peak Forward Current (A)
T = 5 5 ° C , V = 8 0 0 V
SD703C..S20L Series
dv/dt = 1000V/us,
d i/ d t = 300A/ us
RRM
C
tp
1E2
1E3
1E4
1E1 1E2 1E3 1E4
1
2
Pulse Ba se w id t h ( µs)
4
10 jo ules per p ulse
6
Tr a p e zo i d a l Pu l se
Peak Forward Current (A)
0.6
0.4
T = 150°C, V = 800V
SD 7 0 3 C . . S2 0 L Se r i e s
RRM
d v/ d t = 1000V/ µs, d i/ d t = 100A/ µs
J
tp
0.2
1E2
1E3
1E4
1E1 1E2 1E3 1E4
Pulse Ba se w id t h (µs)
Trap ezoid a l Pulse
50 Hz
100
200
400
1000
2000
4000
3000
6000
10000
15000
Pe a k Fo rw a rd C u rre n t (A )
20000
SD703C..S20L Series
T = 55°C, V = 800V
RRM
dv/dt = 1000V/us,
di/dt = 100A/us
C
tp
1E2
1E3
1E4
1E11E21E31E4
1
2
0.1
Pulse Basewidth (µs)
Peak Forward Current (A)
10 joules p er pulse
6
4
dv/dt = 1000V/µs
Si n u so i d a l Pu l se
0.6
0.4
0.2
SD 7 0 3 C . . S3 0 L Se r i e s
T = 150°C, V = 800V
J
RRM
tp
1E2
1E3
1E4
1E1 1E2 1E3 1E4
Pu lse Ba se w id t h ( µs)
50 Hz200
10000
100
4000
dv/dt = 1000V/us
20000
400
15000
1000
2000
6000
Peak Forward Current (A)
Si n u so i d a l Pu l se
SD 7 0 3 C . . S3 0 L Se r i e s
T = 55°C, V = 800V
C
RRM
tp
1500
3000
VS-SD703C..L Series
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Fig. 36 - Maximum Total Energy Loss
Per Pulse Characteristics
Fig. 37 - Frequency Characteristics
Fig. 38 - Maximum Total Energy Loss
Per Pulse Characteristics
Fig. 39 - Frequency Characteristics
ORDERING INFORMATION TABLE
1E2
1E3
1E4
1 E1 1 E2 1 E3 1 E4
1
2
Pulse Basewidth (µs)
4
10 jo ules p e r p ulse
6
Trapezoidal Pulse
Peak Forward Current (A)
SD703C. .S30L Serie s
T = 150°C , V = 800V
dv/dt = 1000V/µs, di/dt = 300A/µs
J
RRM
0.8
0.6
tp
0.4
1E2
1E3
1E4
1E1 1E2 1E3 1E4
Pulse Ba se w id t h ( µ s)
Tra p e zoid a l Pu lse
50 Hz
100
200
400
1000
1500
2000
4000
3000
600
6000
10000
SD 7 0 3 C . . S30L Series
T = 55°C, V = 800V
dv/dt = 1000V/us,
di/dt = 300A/us
C
RRM
tp
Pea k Forw a rd Curren t (A)
1E2
1E3
1E4
1 E1 1 E2 1 E3 1 E4
1
2
Pulse Basewidth (µs)
4
10 jo ules p er p ulse
6
Trapezoidal Pulse
Pea k Forw a rd C urre nt (A)
0.6
0.4
SD 7 0 3 C . . S3 0 L Se r i e s
d v/ d t = 1000V/ µs
di/dt = 100A/µs
T = 150°C, V = 800V
J
RRM
tp
0.8
1E2
1E3
1E4
1E11E21E31E4
Pulse Ba se w id t h (µs)
Trapezoidal Pulse
50 Hz
100
200
400
1000
1500
2000
4000
3000
6000
10000
15000
Peak Forward Current (A)
T = 55°C, V = 800V
SD 7 0 3 C . . S3 0 L Se r i e s
dv/dt = 1000V/us,
di/dt = 100A/us
C
RRM
tp
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95246
1
- Diode
-Vishay Semiconductors product
2
-Essential part number
3
-3 = fast recovery
4
- C = ceramic PUK
5
- Voltage code x 100 = VRRM (see Voltage Ratings table)
6
-t
rr code
7
8- L = PUK case B-PUK (DO-200AB)
Device code
51 32 4 6 7 8
SDVS-703C25S20 L
Outline Dimensions
www.vishay.com Vishay Semiconductors
Revision: 12-Jul-17 1Document Number: 95246
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
B-PUK (DO-200AB)
DIMENSIONS in millimeters (inches)
58.5 (2.30) DIA. MAX.
53 (2.09) DIA. MAX.
Quote between upper and lower pole pieces has to be considered after
application of mounting force (see Thermal and Mechanical Specifications)
3.5 (0.14) DIA. NOM. x
1.8 (0.07) deep MIN. both ends
0.8 (0.03)
both ends
34 (1.34) DIA. MAX.
2 places
26.9 (1.06)
25.4 (1)
C
A
Note:
A = Anode
C = Cathode
Legal Disclaimer Notice
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Revision: 08-Feb-17 1Document Number: 91000
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