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TIP142T — NPN Epitaxial Silicon Darlington Transistor

TIP142T Rev. 1.1.0

November 2014

TIP142T

NPN Epitaxial Silicon Darlington Transistor

Features

• Monolithic Construction with Built-in Base-Emitter Shunt Resistors

• High DC Current Gain: hFE = 1000 at VCE = 4 V, IC = 5 A (Minimum)

• Industrial Use

• Complement to TIP147T

Ordering Information

Absolute Maximum Ratings

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-

ble above the re co mmen ded operating conditions and s tres si ng the parts to these level s i s not recommended. In addi-

tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The

absolute maximum ratings are stress ratings only. Values are at TC = 25°C unless otherwise noted.

Part Number Top Mark Package Packing Method

TIP142T TIP142T TO-220 3L (Single Gauge) Bulk

TIP142TTU TIP142T TO-220 3L (Single Gauge) Rail

Symbol Parameter Value Unit

VCBO Collector-Base Voltage 100 V

VCEO Collector-Emitter Voltage 100 V

VEBO Emitter-Base Voltage 5 V

ICCollector Current (DC) 10 A

ICP Collector Current (Pulse) 15 A

IBBase Current (DC) 0.5 A

PCCollector Dissipation (TC = 25°C) 80 W

TJJunction Temperat ure 150 °C

TSTG Storage Temperature Range -65 to 150 °C

1.Base 2.Collector 3.Emitter

1TO-220

Equivalent Circuit

R1 R2

R1 8kΩ≅

R2 0.12kΩ≅

TIP142T — NPN Epitaxial Silicon Darlington Transistor

TIP142T Rev. 1.1.0 2

Electrical Characteristics

Values are at TC = 25°C unless otherwise noted.

Symbol Parameter Conditions Min. Typ. Max. Unit

VCEO(sus) Collector-Emitter Sustaining Voltage IC = 30 mA, IB = 0 100 V

ICEO Collector Cut-Off Current VCE = 50 V, IB = 02mA

ICBO Collector Cut-Off Current VCB = 100 V, IE = 0 1 mA

IEBO Emitter Cut-Off Current VEB = 5 V, IC = 0 2 mA

hFE DC Current Gain VCE = 4 V, IC = 5 A 1000

VCE = 4 V, IC = 10 A 500

VCE(sat) Collector-Emitter Saturation Voltage IC = 5 A, IB = 10 mA 2 V

IC = 10 A, IB = 40 mA 3

VBE(sat) Base-Emitter Saturation Voltage IC = 10 A, IB = 40 mA 3.5 V

VBE(on) Base-Emitter On Voltage VCE = 4 V, IC = 10 A 3 V

tD Delay Time VCC = 30 V, IC = 5 A,

IB1 = 20 mA,

IB2 = -20 mA,

RL = 6 Ω

0.15 μs

tR Rise Time 0.55 μs

tSTG Storage Time 2.50 μs

tF Fall Time 2.50 μs

TIP142T — NPN Epitaxial Silicon Darlington Transistor

TIP142T Rev. 1.1.0 3

Typical Performance Characteristics

Figure 1. Static Characteristic Figure 2. DC Current Gain

Figure 3. Collector-Emitter Saturation Voltage and

Base-Emitter Saturation Voltage Figure 4. Collector Output Capacitance

Figure 5. Safe Operating Area Figure 6. Power Derating

012345

10 IB = 2000u A

IB = 1800 uA

IB = 1600u A

IB = 1400uA

IB = 1200uA

= 1000uA

IB = 800uA

IB = 600uA

IB = 400uA

IB = 20 0uA

IC[A], COLLECTOR CURRENT

VCE[V ], C OLLECT O R-EMITT ER VOLT AGE

0.1 1 10 100

100

10k

100k

VCE = 4V

hFE, DC CURRENT GAIN

IC[A], COLLECTOR CURRENT

0.1 1 10 100

0.01

0.1

10 IC=500IB

VCE(sat)

VBE(sat)

VBE(sat), VCE(sat)[V], SATURATION VOLTAGE

IC[A], COLLECTOR CURRENT

1 10 100 1000

100

1000 f=0.1MHz

VCB[V], COLLECTOR-BASE VOLTAGE

Cob[pF], CAPACITANCE

1 10 100 1000

0.1

100

TIP141T

TIP142T

TIP140T

IC[A], COLLECTOR CURRENT

VCE[V], COLLECTOR-EMITTER VOLTAGE

0 25 50 75 100 125 150 175

100

PC[W ], P OWER D ISSIPAT IO N

TC[oC], CASE TEMPERATURE

TIP142T — NPN Epitaxial Silicon Darlington Transistor

TIP142T Rev. 1.1.0 4

Physical Dimensions

Figure 7. TO-220, MOLDED, 3LEAD, JEDEC VARIATION AB

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