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TIP142T — NPN Epitaxial Silicon Darlington Transistor
© 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com
TIP142T Rev. 1.1.0
November 2014
TIP142T
NPN Epitaxial Silicon Darlington Transistor
Features
Monolithic Construction with Built-in Base-Emitter Shunt Resistors
High DC Current Gain: hFE = 1000 at VCE = 4 V, IC = 5 A (Minimum)
Industrial Use
Complement to TIP147T
Ordering Information
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the re co mmen ded operating conditions and s tres si ng the parts to these level s i s not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TC = 25°C unless otherwise noted.
Part Number Top Mark Package Packing Method
TIP142T TIP142T TO-220 3L (Single Gauge) Bulk
TIP142TTU TIP142T TO-220 3L (Single Gauge) Rail
Symbol Parameter Value Unit
VCBO Collector-Base Voltage 100 V
VCEO Collector-Emitter Voltage 100 V
VEBO Emitter-Base Voltage 5 V
ICCollector Current (DC) 10 A
ICP Collector Current (Pulse) 15 A
IBBase Current (DC) 0.5 A
PCCollector Dissipation (TC = 25°C) 80 W
TJJunction Temperat ure 150 °C
TSTG Storage Temperature Range -65 to 150 °C
1.Base 2.Collector 3.Emitter
1TO-220
Equivalent Circuit
B
E
C
R1 R2
R1 8kΩ
R2 0.12kΩ
TIP142T — NPN Epitaxial Silicon Darlington Transistor
© 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com
TIP142T Rev. 1.1.0 2
Electrical Characteristics
Values are at TC = 25°C unless otherwise noted.
Symbol Parameter Conditions Min. Typ. Max. Unit
VCEO(sus) Collector-Emitter Sustaining Voltage IC = 30 mA, IB = 0 100 V
ICEO Collector Cut-Off Current VCE = 50 V, IB = 02mA
ICBO Collector Cut-Off Current VCB = 100 V, IE = 0 1 mA
IEBO Emitter Cut-Off Current VEB = 5 V, IC = 0 2 mA
hFE DC Current Gain VCE = 4 V, IC = 5 A 1000
VCE = 4 V, IC = 10 A 500
VCE(sat) Collector-Emitter Saturation Voltage IC = 5 A, IB = 10 mA 2 V
IC = 10 A, IB = 40 mA 3
VBE(sat) Base-Emitter Saturation Voltage IC = 10 A, IB = 40 mA 3.5 V
VBE(on) Base-Emitter On Voltage VCE = 4 V, IC = 10 A 3 V
tD Delay Time VCC = 30 V, IC = 5 A,
IB1 = 20 mA,
IB2 = -20 mA,
RL = 6 Ω
0.15 μs
tR Rise Time 0.55 μs
tSTG Storage Time 2.50 μs
tF Fall Time 2.50 μs
TIP142T — NPN Epitaxial Silicon Darlington Transistor
© 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com
TIP142T Rev. 1.1.0 3
Typical Performance Characteristics
Figure 1. Static Characteristic Figure 2. DC Current Gain
Figure 3. Collector-Emitter Saturation Voltage and
Base-Emitter Saturation Voltage Figure 4. Collector Output Capacitance
Figure 5. Safe Operating Area Figure 6. Power Derating
012345
0
1
2
3
4
5
6
7
8
9
10 IB = 2000u A
IB = 1800 uA
IB = 1600u A
IB = 1400uA
IB = 1200uA
I
B
= 1000uA
IB = 800uA
IB = 600uA
IB = 400uA
IB = 20 0uA
IC[A], COLLECTOR CURRENT
VCE[V ], C OLLECT O R-EMITT ER VOLT AGE
0.1 1 10 100
10
100
1k
10k
100k
VCE = 4V
hFE, DC CURRENT GAIN
IC[A], COLLECTOR CURRENT
0.1 1 10 100
0.01
0.1
1
10 IC=500IB
VCE(sat)
VBE(sat)
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
IC[A], COLLECTOR CURRENT
1 10 100 1000
10
100
1000 f=0.1MHz
VCB[V], COLLECTOR-BASE VOLTAGE
Cob[pF], CAPACITANCE
1 10 100 1000
0.1
1
10
100
TIP141T
TIP142T
TIP140T
DC
IC[A], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
0 25 50 75 100 125 150 175
0
20
40
60
80
100
PC[W ], P OWER D ISSIPAT IO N
TC[oC], CASE TEMPERATURE
TIP142T — NPN Epitaxial Silicon Darlington Transistor
© 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com
TIP142T Rev. 1.1.0 4
Physical Dimensions
Figure 7. TO-220, MOLDED, 3LEAD, JEDEC VARIATION AB
© Fairchild Semiconductor Corporation www.fairchildsemi.com
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Rev. I72
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ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
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application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
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