SEEQ Technology, incorporated Features @ Military Extended and Commercial Temperature Range ~55 C to +125 C Operation (Military) 40C to +85 C Operation (Extended) *0C to +70C Operation (Commercial) @ End of Write Detection + Read Busy Pin + Optional DATA Polling Feature @ High Endurance, Write Cycles 2817A: 10,000 Cycles/Byte Minimum 5517A: 100K, 400K and 1 Million Cycles/Byte On-Chip Timer - Automatic Byte Erase Before Byte Write 5V+ 10% Power Supply Power Up/Down Protection Circuitry 150 ns max. Access Time Low Power Operation 100 mA Active Current 40 mA Standby Current JEDEC Approved Byte-Wide Pinout @ MIL-STD-883 Class B Compliant Block Diagram COLUMN ADORESS DECODE COLUMN ADORESS LATCHES Aga ROW ADDRESS As oC) LATCHES oman LATCH ENABLE RDY/BUSYa EDGE DETECTION TIMER CKT WE ] AND LATCHES S LATCH ENABLE LATCHES CONTROL LATCHES Ril VO BUFFERS Wo.7 RDY/BUSY 2817A/2817AH 5517A/5517AH Timer E? 16K Electrically Erasable PROMs August 1992 Description SEEQ's 2817A/5517A are 5V only, 2K x 8 electrically erasable programmable read only memory (EEPROM). They are packaged in 28 pin ceramic DIP and plastic DIP packages and a 32 pinleaded chip carrier, all with aready/ busy pin. This EEPROM is ideal for applications which require non-volatility andin-system data modification. The endurance, the minimum number of times which a byte may be written, is 10 thousand (K) cycles for the 2817A or 100K, 400K or 1 million cycles for the 5517A. The 2817A has an internal timer that automatically times out the write time. The on-chip timer, along with the input Pin Configuration PLASTIC LEADED CHIP CARRIER TOP VIEW OUAL-IN-LINE TOP VIEW Pin Names AA, ADDRESSES COLUMN (LOWER ORDER BITS) A-Ayo ADDRESSES ROW CE CHIP ENABLE OE OUTPUT ENABLE WE WRITE ENABLE VO,, DATA INPUT (WRITE OR ERASE) DATA OUTPUT (READ) RDY/BUSY | DEVICE READY/BUSY NC NO CONNECT SEEQ Technology, noerperated MD400101/A 1-21latches, frees the microcomputer system for other tasks during the write time. The standard 2817A/5517A write cycle time is 10 ms over the recommended range, while the 2817AH/5517AH is a fast 2ms. An automatic byte erase is performed before a byte operation is started. Once a byte has been written, the ready/busy pin signals the microprocessor that it is available for another write or a read cycle, Allinputs are TTL for both the byte write and read mode. Data retention is specified for 10 years. Device Operation There are five operational modes (see Table 1) and, except for the chip erase model!'!, only TTL inputs are required. To write into a particular location, a TTL low is applied to the write enable (WE) pin of a selected (CE low) device. This, combined with output enable (OE) being Mode Selection (table 1) Mode/Pin |CE | OE | WE vo RDY/BUSY Read Viel Vi | Yaw Dour High Z Standby |V,, | X X High Z High Z Byte Write iV. 1 Vi] Vi, Diy Vor Write X 1Vi | X | High 2/D,,,] High Z Inhibit X |X | Vy, | High 2/D,,,} High Z X: any TTL level Recommended Operating Conditions 2817A/2817AH 5517A/5517AH high, initiates a write cycle. During a byte write cycle, addresses are latched on either the falling edge of CE or WE, whichever one occurred last. Data is latched on the rising edge of CE or WE, whichever one occurred first. The byte is automatically erased before data is written. While the write operation is in progress , the RDY/BUSY output isata TTL low. Aninternal timer times out the required byte write time and at the end of this time, the device signals the RDY/BUSY pin to a TTL high. The RDY/BUSY pin is an open drain output and a typical 3K Q. pull-up resistor to V,, is required. The pull-up resistor value is dependent on the number of OR-tied 2817A RDY/BUSY pins. DATA Polling (Optional Feature) DATA polling is a method of minimizing write times by de- termining the actual end-point of a write cycle. If areadis performed to any address while the device is still writing, it will present the ones-complement of the last byte written. When the device has completedits write cycle, aread from the last address written will result in valid data. Thus, software can simply read from the part until the last data byte written is read correctly. Timing for a DATA polling read is the same as a normal read. *COMMENT: Stresses above those listed under "Absolute Maxi- mum Ratings may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the opera- tional sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 2817A/2817AH-150 | 2817A/2817AH-200 2817A/2817AH-250 | 2817A/2817AH-300 517A/5517AH-150 | 5517A/5517AH-200 5517A/5517AH-250 | 5517A/5517AH-300 Temperature Commercial 0C to +70C 0C to +70C 0C to +70C 0C to +70C Range Extended 40C to +85C | -40C to +85C | -40C to +85C | -~40C to +85C Military 55C to +125C -55C to +125C | -55C to +125C Voc Supply Voltage 5V+10% SVt10% 5V+t10% 5V410% Endurance and Data Retention Symbol Parameter Value Units Condition N Minimum Endurance MIL-STD 883 Test 2817A 10,000 Cycles/Byte Method 1033 5517A 100,000 Cycles/Byte MIL-STD 883 Test 400,000 Method 1033 1,000,000 Tor Data Retention >10 Years MIL-STD 883 Test Method 1033 Notes: 1. Chip Erase is an optional mode. 2. Characterized. Not tested. SEEQ Yeahnelegy, heerperated 1-22 MD400101/A2817A/2817AH 5517A/5517AH Absolute Maximum Stress Ratings* Power Up/Down Considerations Temperature The 281 7A/551 7A has internal circuitry to minimize a false SHOPAGO wo.ssecssesccsstscsseessesscssesessessssesee -65C to +150C write during system V,. power up or down. This circuitry Under Bias prevents writing under any one of the following conditions. Military/Extended ceveasensaneccarercuaeas -65C to +135C 1. V..is less than 3 V/2i COMMENCIAL .esecsecesesteseestssescteseees -10C to +80C , Are 2. A negative Write Enable (WE) transition has not d with Vis betw 3 Vand 5 V. D.C. Voltage applied to all Inputs or Outputs OCCUrER WINN Veg IS DENWeeN 3 With respect t0 GrOUN ......sscssccccsecenee: +6.0 Vto-0.5V Writing will also be prevented if CE or OE are in TTL logical Undershoot/Overshoot pulse of less then 10 ns states other than specified for a byte write in the Mode (measured at 50% point) applied to all inputs or Selection table. outputs with respect to ground .... (undershoot) -1.0 V (overshoot) + 7.0 V D.C. Operating Characteristics (Over the operating V,, and temperature range) Limits Symbol | Parameter Min. Max. Units Test Condition lee Active V.., Current 100 mA CE = OE =V,,; All YO Open; (Includes Write Operation) Other Inputs = 5.5 V leg Standby V,,, Current 40 mA CE = V,,, OE = V,,; All VO Open; Other Inputs = 5.5 V l, Input Leakage Current 10 pA Vi = 5.5 V lo Output Leakage Current 10 pA Vout = 5:5 V Vi Input Low Voltage -0.1 0.8 Vv Vin Input High Voltage _ 2.0 4. Veg +1 V Vor Output Low Voltage 0.4 V Io, = 2.1 MA Vou Output High Voltage 2.4 Vv lou = 400 A A.C. Characteristics Read Operation (Over the operating V,, and temperature range) Limits 2817A/ 2817A/ 28174 2817A/ 2817AH-150 | 2617AH-200 | 2817AH-250 | 2817AH-300 S517A/ 5517A/ 5517A/ 5517A/ 5517AH-150 | 5517AH-200 | 5537AH-250 | 5517AH-300 Symbol | Parameter Min. |Max.| Min. | Max.} Min. | Max.| Min. |Max. | Units | Test Conditions tae Read Cycle Time 150 200 250 300 ns | CE=OE=V, tor Chip Enable Access Time 150 200 250 300 | ns | OE=V, tha Address Access Time 150 200 250 300 | ns | CE=OE=V, tog Output Enable Access Time 70 90 90 100 | ns CE=V, toe Output Enable High 50 60 60 60 ns CE =V,, to Output Not being Driven ton Output Hold from Address Qo 0 0 0 ns | CE orOE =V,, Change, Chip Enable, or Output Enable whichever occurs first SEE Technelegy, Incerperatad 1 -23 MD400101/AADDRESSES Read Cycle Timing t e@ --- ADORESSES VALID ---____ JF 2817A/2817AH 5517A4/5517AH K x / - ____ tor tou tm h OUTPUT VALID OUTPUT 3} AC Characteristics Write Operation (Over the operating Voge and temperature range) Limits 2817A/ 2817A/ 2817A/ 2817A/ 2817AH-150 2817AH-200 2817AH-250 | 2817AH-300 S517A/ 5517A/ S517A/ SS17A/ 5517AH-150 5517AH-200 5517AH-250 | 5517AH-300 Symbol| Parameter Min, | Max.; Min. | Max. | Min.} Max.} Min. | Max. [Units bs Address to Write Set Up Time 10 10 10 10 ns tes CE to Write Set Up Time 10 10 10 10 ns two?! | WE Write Pulse Width 100 120 150 150 ns tay Address Hold Time 70 50 50 50 ns tos Data Set Up Time 50 50 50 50 ns tou Data Hold Time 0 0 0 0 ns ton CE Hold Time 0 0 0 0 ns toes | OE Set Up Time 10 10 10 10 ns toen | OE Hold Time 10 10 10 10 ns tor Data Latch Time 50 50 50 50 ns toy! | Data Valid Time 1 1 1 1 HS top Time to Device Busy 120 120 120 120 | ns twa Write Recovery Time 10 10 10 10 | ps Before Read Cycle twe Byte Write Cycle Time 2817A/5517A 10 10 10 10 ms 2817AH/5517AH 2 ms NOTES: SEE 1. This parameter is measured only for the initial qualification and after process or design changes which may affect capacitance. 2. WE is noise protected. Less than a 20 ns write pulse will not activate a write cycle. 3. Data must be valid within 1 ys maximum after the initiation of a write cycle. Technology, Inverperated MD400101/A 1-242817A/2817AH 5517A/5517AH A.C. Test Conditions Output Load: 1 TTL gate and C, = 100 pF Input Rise and Fall Times: < 20 ns Input Pulse Levels: 0.45 V to 2.4 V Timing Measurement Reference Level: Inputs 1 V and 2 V Outputs 0.8 V and 2 V Capacitance"! T, = 25C, { = 1 MHz Symbol Parameter Max Conditions Cy, input Capacitance 6 pF Vin ZOV Cour Data (I/O) Capacitance 10 pF Vig = OV Write Cycle Timing tors Sa oa _ Snel + loen yr \ al Ao- Ara S tas tt a ___, 5 We \ / \ / oc ee toe ee ' DF 'bH pi t wp tp Lag ig __ DATAIN S$ i an yy tps PF oitce > se} tov | at t ay, 4 RDY/BUSY tg ' bee WR rat we jj WRITE CYCLE a el READ CYCLE _ SEE Technology, hhoerperated 1-25 MD400101/A2817A/2817AH 5517A/5517AH Ordering Information D M 2817A H ~150 /B PACKAGE TEMPERATURE PART TYPE EEPROM BYTE ACCESS TIME SCREENING OPTION TYPE RANGE WRITE TIME D - Ceramic DiP M --55C to +125C 2K x 8 EEPROM {Blank) - 10ms 150 = 150 ns /B MIL 883 CLASS B N-PLOC (Military) 2817A - 10K Endurance H-2ms 200 = 200 ns SCREENED P Plastic DIP 5517A - >10K Endurance 250 = 250 ns UX - Unencapeulated E--40 C to +85C (May be specified as 300 = 300 ns Die {Extended) 100K, 400K or 1 Million Cycles of Endurance) C- OC0+70C (Commerciat) SEEQ Technetegy, heorpernted 1-26 MD400101/A